IT1296832B1 - Struttura integrata di protezione con dispositivi a soglia di conduzione inversa prestabilita di polarizzazione - Google Patents

Struttura integrata di protezione con dispositivi a soglia di conduzione inversa prestabilita di polarizzazione

Info

Publication number
IT1296832B1
IT1296832B1 IT97MI002675A ITMI972675A IT1296832B1 IT 1296832 B1 IT1296832 B1 IT 1296832B1 IT 97MI002675 A IT97MI002675 A IT 97MI002675A IT MI972675 A ITMI972675 A IT MI972675A IT 1296832 B1 IT1296832 B1 IT 1296832B1
Authority
IT
Italy
Prior art keywords
protection structure
reverse conduction
integrated protection
conduction threshold
threshold devices
Prior art date
Application number
IT97MI002675A
Other languages
English (en)
Inventor
Natale Aiello
Barbera Atanasio La
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT97MI002675A priority Critical patent/IT1296832B1/it
Priority to US09/195,912 priority patent/US6057578A/en
Publication of ITMI972675A1 publication Critical patent/ITMI972675A1/it
Application granted granted Critical
Publication of IT1296832B1 publication Critical patent/IT1296832B1/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
IT97MI002675A 1997-12-02 1997-12-02 Struttura integrata di protezione con dispositivi a soglia di conduzione inversa prestabilita di polarizzazione IT1296832B1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT97MI002675A IT1296832B1 (it) 1997-12-02 1997-12-02 Struttura integrata di protezione con dispositivi a soglia di conduzione inversa prestabilita di polarizzazione
US09/195,912 US6057578A (en) 1997-12-02 1998-11-19 Protective integrated structure with biasing devices having a predetermined reverse conduction threshold

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT97MI002675A IT1296832B1 (it) 1997-12-02 1997-12-02 Struttura integrata di protezione con dispositivi a soglia di conduzione inversa prestabilita di polarizzazione

Publications (2)

Publication Number Publication Date
ITMI972675A1 ITMI972675A1 (it) 1999-06-02
IT1296832B1 true IT1296832B1 (it) 1999-08-02

Family

ID=11378305

Family Applications (1)

Application Number Title Priority Date Filing Date
IT97MI002675A IT1296832B1 (it) 1997-12-02 1997-12-02 Struttura integrata di protezione con dispositivi a soglia di conduzione inversa prestabilita di polarizzazione

Country Status (2)

Country Link
US (1) US6057578A (it)
IT (1) IT1296832B1 (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4610786B2 (ja) * 2001-02-20 2011-01-12 三菱電機株式会社 半導体装置
US6586317B1 (en) * 2001-05-08 2003-07-01 National Semiconductor Corporation Method of forming a zener diode in a npn and pnp bipolar process flow that requires no additional steps to set the breakdown voltage
US6417544B1 (en) 2001-06-11 2002-07-09 Chartered Semiconductor Manufacturing Ltd. Diode-like plasma induced damage protection structure
US10192863B2 (en) * 2014-03-21 2019-01-29 Texas Instruments Incorporated Series connected ESD protection circuit
JP7279394B2 (ja) * 2019-02-15 2023-05-23 富士電機株式会社 半導体装置および半導体装置の製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5414689A (en) * 1977-07-06 1979-02-03 Hitachi Ltd Constant-voltage diode
JPS5676560A (en) * 1979-11-28 1981-06-24 Hitachi Ltd Semiconductor device
US4405933A (en) * 1981-02-04 1983-09-20 Rca Corporation Protective integrated circuit device utilizing back-to-back zener diodes
JPS5948951A (ja) * 1982-09-14 1984-03-21 Toshiba Corp 半導体保護装置
US4633283A (en) * 1985-03-11 1986-12-30 Rca Corporation Circuit and structure for protecting integrated circuits from destructive transient voltages
FR2613131B1 (fr) * 1987-03-27 1989-07-28 Thomson Csf Circuit integre protege contre des surtensions
FR2624655B1 (fr) * 1987-12-14 1990-05-11 Sgs Thomson Microelectronics Structure de protection d'un acces a un circuit integre
US5066613A (en) * 1989-07-13 1991-11-19 The United States Of America As Represented By The Secretary Of The Navy Process for making semiconductor-on-insulator device interconnects
DE69029180T2 (de) * 1989-08-30 1997-05-22 Siliconix Inc Transistor mit Spannungsbegrenzungsanordnung
EP0480582A3 (en) * 1990-09-10 1992-07-22 Fujitsu Limited A semiconductor device with a protective element
DE69326543T2 (de) * 1993-04-28 2000-01-05 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Monolithisch integrierte Struktur einer elektronischen Vorrichtung mit einer bestimmten unidirektionalen Konduktionsschwellenspannung
EP0646964B1 (en) * 1993-09-30 1999-12-15 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Integrated structure active clamp for the protection of power devices against overvoltages, and manufacturing process thereof
JPH0837284A (ja) * 1994-07-21 1996-02-06 Nippondenso Co Ltd 半導体集積回路装置
JP4278721B2 (ja) * 1994-09-30 2009-06-17 テキサス インスツルメンツ インコーポレイテツド 高い逆降伏電圧を有するツェナーダイオード
JP2882291B2 (ja) * 1994-10-31 1999-04-12 関西日本電気株式会社 高耐圧ダイオード及びその製造方法
US5536958A (en) * 1995-05-02 1996-07-16 Motorola, Inc. Semiconductor device having high voltage protection capability

Also Published As

Publication number Publication date
US6057578A (en) 2000-05-02
ITMI972675A1 (it) 1999-06-02

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