IT1301840B1 - Metodo per incrementare la seletttvita' tra un film di materialefotosensibile ed uno strato da sottoporre ed incisione in processi - Google Patents

Metodo per incrementare la seletttvita' tra un film di materialefotosensibile ed uno strato da sottoporre ed incisione in processi

Info

Publication number
IT1301840B1
IT1301840B1 ITMI981494A IT1301840B1 IT 1301840 B1 IT1301840 B1 IT 1301840B1 IT MI981494 A ITMI981494 A IT MI981494A IT 1301840 B1 IT1301840 B1 IT 1301840B1
Authority
IT
Italy
Prior art keywords
subjected
film
layer
processes
engraved
Prior art date
Application number
Other languages
English (en)
Inventor
Omar Vassali
Simone Alba
Original Assignee
Stmicroelettronica S R L
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stmicroelettronica S R L filed Critical Stmicroelettronica S R L
Priority to IT98MI001494 priority Critical patent/IT1301840B1/it
Publication of ITMI981494A1 publication Critical patent/ITMI981494A1/it
Application granted granted Critical
Publication of IT1301840B1 publication Critical patent/IT1301840B1/it
Priority to US09/836,937 priority patent/US6495455B2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials

Landscapes

  • Drying Of Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
IT98MI001494 1998-06-30 1998-06-30 Metodo per incrementare la seletttvita' tra un film di materialefotosensibile ed uno strato da sottoporre ed incisione in processi IT1301840B1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT98MI001494 IT1301840B1 (it) 1998-06-30 1998-06-30 Metodo per incrementare la seletttvita' tra un film di materialefotosensibile ed uno strato da sottoporre ed incisione in processi
US09/836,937 US6495455B2 (en) 1998-06-30 2001-04-17 Method for enhancing selectivity between a film of a light-sensitive material and a layer to be etched in electronic semiconductor device fabrication processes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT98MI001494 IT1301840B1 (it) 1998-06-30 1998-06-30 Metodo per incrementare la seletttvita' tra un film di materialefotosensibile ed uno strato da sottoporre ed incisione in processi

Publications (2)

Publication Number Publication Date
ITMI981494A1 ITMI981494A1 (it) 1999-12-30
IT1301840B1 true IT1301840B1 (it) 2000-07-07

Family

ID=11380352

Family Applications (1)

Application Number Title Priority Date Filing Date
IT98MI001494 IT1301840B1 (it) 1998-06-30 1998-06-30 Metodo per incrementare la seletttvita' tra un film di materialefotosensibile ed uno strato da sottoporre ed incisione in processi

Country Status (2)

Country Link
US (1) US6495455B2 (it)
IT (1) IT1301840B1 (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITMI20042206A1 (it) * 2004-11-17 2005-02-17 St Microelectronics Srl Procedimento per la definizione di cirfuiti integrati di dispositivi elettronici a semicondutture
US7615050B2 (en) * 2005-06-27 2009-11-10 Boston Scientific Scimed, Inc. Systems and methods for creating a lesion using transjugular approach
US20070181530A1 (en) * 2006-02-08 2007-08-09 Lam Research Corporation Reducing line edge roughness
EP2499663A2 (en) * 2009-11-09 2012-09-19 3M Innovative Properties Company Etching process for semiconductors
CN102598223B (zh) * 2009-11-09 2015-03-25 3M创新有限公司 用于半导体的各向异性蚀刻的工艺

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4068018A (en) 1974-09-19 1978-01-10 Nippon Electric Co., Ltd. Process for preparing a mask for use in manufacturing a semiconductor device
US4468284A (en) * 1983-07-06 1984-08-28 Psi Star, Inc. Process for etching an aluminum-copper alloy
JP2639372B2 (ja) * 1995-02-21 1997-08-13 日本電気株式会社 半導体装置の製造方法
TW451355B (en) 1996-09-10 2001-08-21 United Microelectronics Corp Method for increasing the etching selectivity
US5858879A (en) * 1997-06-06 1999-01-12 Taiwan Semiconductor Manufacturing Co., Ltd. Method for etching metal lines with enhanced profile control
US6121154A (en) * 1997-12-23 2000-09-19 Lam Research Corporation Techniques for etching with a photoresist mask
US6271154B1 (en) * 1998-05-12 2001-08-07 Advanced Micro Devices, Inc. Methods for treating a deep-UV resist mask prior to gate formation etch to improve gate profile

Also Published As

Publication number Publication date
US20020008305A1 (en) 2002-01-24
ITMI981494A1 (it) 1999-12-30
US6495455B2 (en) 2002-12-17

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