IT1396332B1 - Schieramento di fotodiodi per rilevazione di immagini a due terminali uscita di dati multiplati e procedimento di fabbricazione. - Google Patents

Schieramento di fotodiodi per rilevazione di immagini a due terminali uscita di dati multiplati e procedimento di fabbricazione.

Info

Publication number
IT1396332B1
IT1396332B1 ITVA2009A000062A ITVA20090062A IT1396332B1 IT 1396332 B1 IT1396332 B1 IT 1396332B1 IT VA2009A000062 A ITVA2009A000062 A IT VA2009A000062A IT VA20090062 A ITVA20090062 A IT VA20090062A IT 1396332 B1 IT1396332 B1 IT 1396332B1
Authority
IT
Italy
Prior art keywords
photodiod
deployment
images
detection
data output
Prior art date
Application number
ITVA2009A000062A
Other languages
English (en)
Inventor
Massimo Cataldo Mazzillo
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to ITVA2009A000062A priority Critical patent/IT1396332B1/it
Priority to US12/895,081 priority patent/US8264019B2/en
Publication of ITVA20090062A1 publication Critical patent/ITVA20090062A1/it
Priority to US13/534,801 priority patent/US8338219B2/en
Application granted granted Critical
Publication of IT1396332B1 publication Critical patent/IT1396332B1/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/301—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to very short wavelength, e.g. being sensitive to X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
ITVA2009A000062A 2009-10-02 2009-10-02 Schieramento di fotodiodi per rilevazione di immagini a due terminali uscita di dati multiplati e procedimento di fabbricazione. IT1396332B1 (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
ITVA2009A000062A IT1396332B1 (it) 2009-10-02 2009-10-02 Schieramento di fotodiodi per rilevazione di immagini a due terminali uscita di dati multiplati e procedimento di fabbricazione.
US12/895,081 US8264019B2 (en) 2009-10-02 2010-09-30 Multiplexed output two terminal photodiode array for imaging applications and related fabrication process
US13/534,801 US8338219B2 (en) 2009-10-02 2012-06-27 Multiplexed output two terminal photodiode array for imaging applications and related fabrication process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITVA2009A000062A IT1396332B1 (it) 2009-10-02 2009-10-02 Schieramento di fotodiodi per rilevazione di immagini a due terminali uscita di dati multiplati e procedimento di fabbricazione.

Publications (2)

Publication Number Publication Date
ITVA20090062A1 ITVA20090062A1 (it) 2011-04-03
IT1396332B1 true IT1396332B1 (it) 2012-11-16

Family

ID=42130924

Family Applications (1)

Application Number Title Priority Date Filing Date
ITVA2009A000062A IT1396332B1 (it) 2009-10-02 2009-10-02 Schieramento di fotodiodi per rilevazione di immagini a due terminali uscita di dati multiplati e procedimento di fabbricazione.

Country Status (2)

Country Link
US (2) US8264019B2 (it)
IT (1) IT1396332B1 (it)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8487396B2 (en) 2009-06-01 2013-07-16 Stmicroelectronics S.R.L. Trench sidewall contact Schottky photodiode and related method of fabrication
IT1401623B1 (it) * 2010-08-12 2013-07-26 St Microelectronics Srl Diodo schottky multibanda
US20110095192A1 (en) * 2009-10-26 2011-04-28 Johnson Kurtis F Method to increase dynamic range of segmented non-linear devices
EP2375242A1 (en) 2010-04-06 2011-10-12 FOM Institute for Atomic and Moleculair Physics Integrated plasmonic nanocavity sensing device
CN103502798A (zh) * 2011-04-05 2014-01-08 集成等离子光子学公司 集成等离子激元感测装置和设备
US9343497B2 (en) * 2012-09-20 2016-05-17 Semiconductor Components Industries, Llc Imagers with stacked integrated circuit dies
US9431440B2 (en) * 2013-03-14 2016-08-30 Maxim Integrated Products, Inc. Optical sensor
CN104051488B (zh) * 2013-03-14 2019-06-14 马克西姆综合产品公司 光学传感器
ITTO20130398A1 (it) * 2013-05-16 2014-11-17 St Microelectronics Srl Fotodiodo a valanga operante in modalita' geiger includente una struttura di confinamento elettro-ottico per la riduzione dell'interferenza, e schiera di fotodiodi
US8941145B2 (en) 2013-06-17 2015-01-27 The Boeing Company Systems and methods for dry etching a photodetector array
US9466631B2 (en) * 2014-05-13 2016-10-11 Stmicroelectronics S.R.L. Solid state photomultipliers array of enhanced fill factor and simplified packaging
US9685576B2 (en) * 2014-10-03 2017-06-20 Omnivision Technologies, Inc. Back side illuminated image sensor with guard ring region reflecting structure
US9685575B2 (en) * 2015-03-06 2017-06-20 Stmicroelectronics S.R.L. Multiband double junction photodiode and related manufacturing process
WO2017085842A1 (ja) * 2015-11-19 2017-05-26 株式会社島津製作所 半導体検出器
EP3430648B1 (en) * 2016-03-15 2020-09-23 Dartmouth College Stacked backside-illuminated quanta image sensor with cluster-parallel readout
US10043936B1 (en) 2016-10-27 2018-08-07 Semiconductor Components Industries, Llc Avalanche diode, and a process of manufacturing an avalanche diode
US10636930B2 (en) * 2017-09-29 2020-04-28 Taiwan Semiconductor Manufacturing Company Ltd. SPAD image sensor and associated fabricating method
DE102018122925A1 (de) * 2017-09-29 2019-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Spad image sensor and associated fabricating method
CN108695398B (zh) * 2017-11-30 2020-08-25 中芯集成电路（宁波）有限公司 肖特基的光探测器及其形成方法
IT201800007231A1 (it) 2018-07-16 2020-01-16 Fotodiodo a valanga operante in modalita' geiger a basso rumore e relativo procedimento di fabbricazione
CN109524486B (zh) * 2018-09-28 2022-09-23 暨南大学 一种电读出光学传感器
US10784300B1 (en) * 2019-04-16 2020-09-22 Visera Technologies Company Limited Solid-state imaging devices
CN111653632B (zh) * 2020-06-15 2022-05-10 京东方科技集团股份有限公司 光电探测器及其制备方法、触控基板和显示面板
CN113325459B (zh) * 2021-05-28 2024-04-12 京东方科技集团股份有限公司 平板探测器及其制备方法、摄影设备
CN117855339B (zh) * 2024-03-05 2024-05-14 山西创芯光电科技有限公司 一种完全去除衬底的超晶格红外探测器制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5751159A (en) * 1995-09-05 1998-05-12 Motorola, Inc. Semiconductor array and switches formed on a common substrate for array testing purposes
US7800193B2 (en) * 2006-03-13 2010-09-21 Nec Corporation Photodiode, method for manufacturing such photodiode, optical communication device and optical interconnection module
US8053853B2 (en) * 2006-05-03 2011-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Color filter-embedded MSM image sensor
US20110156682A1 (en) * 2009-12-30 2011-06-30 Dev Alok Girdhar Voltage converter with integrated schottky device and systems including same
US9293366B2 (en) * 2010-04-28 2016-03-22 Taiwan Semiconductor Manufacturing Company, Ltd. Through-substrate vias with improved connections

Also Published As

Publication number Publication date
US20110079869A1 (en) 2011-04-07
ITVA20090062A1 (it) 2011-04-03
US8264019B2 (en) 2012-09-11
US20120270360A1 (en) 2012-10-25
US8338219B2 (en) 2012-12-25

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