IT1402165B1 - Resistore ad elevata precisione e relativo metodo di calibratura - Google Patents

Resistore ad elevata precisione e relativo metodo di calibratura

Info

Publication number
IT1402165B1
IT1402165B1 ITTO2010A000559A ITTO20100559A IT1402165B1 IT 1402165 B1 IT1402165 B1 IT 1402165B1 IT TO2010A000559 A ITTO2010A000559 A IT TO2010A000559A IT TO20100559 A ITTO20100559 A IT TO20100559A IT 1402165 B1 IT1402165 B1 IT 1402165B1
Authority
IT
Italy
Prior art keywords
high precision
calibration method
precision resistor
relative calibration
relative
Prior art date
Application number
ITTO2010A000559A
Other languages
English (en)
Inventor
Antonello Santangelo
Stefania Maria Serena Privitera
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to ITTO2010A000559A priority Critical patent/IT1402165B1/it
Priority to US13/173,214 priority patent/US8952492B2/en
Publication of ITTO20100559A1 publication Critical patent/ITTO20100559A1/it
Application granted granted Critical
Publication of IT1402165B1 publication Critical patent/IT1402165B1/it
Priority to US14/617,984 priority patent/US9429967B2/en

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current 
    • G05F1/46Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/462Regulating voltage or current  wherein the variable actually regulated by the final control device is DC as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/463Sources providing an output which depends on temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/22Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
    • H01C17/26Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material
    • H01C17/265Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material by chemical or thermal treatment, e.g. oxydation, reduction, annealing
    • H01C17/267Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material by chemical or thermal treatment, e.g. oxydation, reduction, annealing by passage of voltage pulses or electric current
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/006Thin film resistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/06Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material including means to minimise changes in resistance with changes in temperature
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/40Resistors
    • H10D1/47Resistors having no potential barriers
    • H10D1/474Resistors having no potential barriers comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011Manufacture or treatment of multistable switching devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20Multistable switching devices, e.g. memristors
    • H10N70/231Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/821Device geometry
    • H10N70/823Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/881Switching materials
    • H10N70/882Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828Tellurides, e.g. GeSbTe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49082Resistor making

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
ITTO2010A000559A 2010-06-30 2010-06-30 Resistore ad elevata precisione e relativo metodo di calibratura IT1402165B1 (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
ITTO2010A000559A IT1402165B1 (it) 2010-06-30 2010-06-30 Resistore ad elevata precisione e relativo metodo di calibratura
US13/173,214 US8952492B2 (en) 2010-06-30 2011-06-30 High-precision resistor and trimming method thereof
US14/617,984 US9429967B2 (en) 2010-06-30 2015-02-10 High precision resistor and trimming method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITTO2010A000559A IT1402165B1 (it) 2010-06-30 2010-06-30 Resistore ad elevata precisione e relativo metodo di calibratura

Publications (2)

Publication Number Publication Date
ITTO20100559A1 ITTO20100559A1 (it) 2011-12-31
IT1402165B1 true IT1402165B1 (it) 2013-08-28

Family

ID=43640613

Family Applications (1)

Application Number Title Priority Date Filing Date
ITTO2010A000559A IT1402165B1 (it) 2010-06-30 2010-06-30 Resistore ad elevata precisione e relativo metodo di calibratura

Country Status (2)

Country Link
US (2) US8952492B2 (it)
IT (1) IT1402165B1 (it)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8723637B2 (en) 2012-04-10 2014-05-13 Analog Devices, Inc. Method for altering electrical and thermal properties of resistive materials
ITTO20120553A1 (it) * 2012-06-22 2013-12-23 St Microelectronics Srl Dispositivo a resistore calibrabile elettricamente e relativo metodo di calibrazione
US9059130B2 (en) * 2012-12-31 2015-06-16 International Business Machines Corporation Phase changing on-chip thermal heat sink
US9972616B2 (en) * 2013-09-27 2018-05-15 Intel Corporation Methods of forming tuneable temperature coefficient FR embedded resistors
US9541456B2 (en) * 2014-02-07 2017-01-10 Sandisk Technologies Llc Reference voltage generator for temperature sensor with trimming capability at two temperatures
DE102015112919B4 (de) * 2015-08-06 2019-12-24 Infineon Technologies Ag Halbleiterbauelemente, eine Halbleiterdiode und ein Verfahren zum Bilden eines Halbleiterbauelements
US9400511B1 (en) 2016-01-07 2016-07-26 International Business Machines Corporation Methods and control systems of resistance adjustment of resistors
US10580976B2 (en) 2018-03-19 2020-03-03 Sandisk Technologies Llc Three-dimensional phase change memory device having a laterally constricted element and method of making the same
JP7671225B2 (ja) * 2021-10-08 2025-05-01 ルネサスエレクトロニクス株式会社 抵抗材料、抵抗素子および抵抗素子の製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53136980A (en) 1977-05-04 1978-11-29 Nippon Telegr & Teleph Corp <Ntt> Resistance value correction method for poly crystal silicon resistor
US4870472A (en) 1984-10-18 1989-09-26 Motorola, Inc. Method for resistor trimming by metal migration
DE69218134T2 (de) 1991-12-09 1997-09-18 Toshiba Lighting & Technology Fixier-Heizelement und Verfahren zu dessen Herstellung
US5466484A (en) 1993-09-29 1995-11-14 Motorola, Inc. Resistor structure and method of setting a resistance value
BE1007868A3 (nl) 1993-12-10 1995-11-07 Koninkl Philips Electronics Nv Elektrische weerstand.
US5808197A (en) 1995-01-13 1998-09-15 Remec, Inc. Vehicle information and control system
US5679275A (en) 1995-07-03 1997-10-21 Motorola, Inc. Circuit and method of modifying characteristics of a utilization circuit
DE69531058D1 (de) 1995-12-20 2003-07-17 Ibm Halbleiter IC chip mit elektrisch verstellbaren Widerstandstrukturen
US6647614B1 (en) * 2000-10-20 2003-11-18 International Business Machines Corporation Method for changing an electrical resistance of a resistor
JP4268520B2 (ja) 2001-09-10 2009-05-27 マイクロブリッジ テクノロジーズ インコーポレイテッド パルス加熱および熱局所化を使用する抵抗体の効果的なトリミング方法
US6621404B1 (en) * 2001-10-23 2003-09-16 Lsi Logic Corporation Low temperature coefficient resistor
US6960744B2 (en) 2003-08-04 2005-11-01 International Business Machines Corporation Electrically tunable on-chip resistor
US7351613B2 (en) * 2004-11-04 2008-04-01 Silicon Storage Technology, Inc. Method of trimming semiconductor elements with electrical resistance feedback
US7217981B2 (en) 2005-01-06 2007-05-15 International Business Machines Corporation Tunable temperature coefficient of resistance resistors and method of fabricating same
US8242876B2 (en) * 2008-09-17 2012-08-14 Stmicroelectronics, Inc. Dual thin film precision resistance trimming
WO2010068221A1 (en) * 2008-12-12 2010-06-17 Hewlett-Packard Development Company, L.P. Memristive device
IT1392556B1 (it) * 2008-12-18 2012-03-09 St Microelectronics Rousset Struttura di resistore di materiale a cambiamento di fase e relativo metodo di calibratura

Also Published As

Publication number Publication date
US20120001679A1 (en) 2012-01-05
US20150168968A1 (en) 2015-06-18
US8952492B2 (en) 2015-02-10
US9429967B2 (en) 2016-08-30
ITTO20100559A1 (it) 2011-12-31

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