ITTO20120675A1 - Dispositivo phemt ad arricchimento/svuotamento e relativo metodo di fabbricazione - Google Patents
Dispositivo phemt ad arricchimento/svuotamento e relativo metodo di fabbricazioneInfo
- Publication number
- ITTO20120675A1 ITTO20120675A1 IT000675A ITTO20120675A ITTO20120675A1 IT TO20120675 A1 ITTO20120675 A1 IT TO20120675A1 IT 000675 A IT000675 A IT 000675A IT TO20120675 A ITTO20120675 A IT TO20120675A IT TO20120675 A1 ITTO20120675 A1 IT TO20120675A1
- Authority
- IT
- Italy
- Prior art keywords
- emptying
- enrichment
- manufacturing
- phemt device
- phemt
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/86—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of Schottky-barrier gate FETs
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT000675A ITTO20120675A1 (it) | 2011-08-01 | 2012-07-30 | Dispositivo phemt ad arricchimento/svuotamento e relativo metodo di fabbricazione |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ITTO20110713 | 2011-08-01 | ||
| IT000675A ITTO20120675A1 (it) | 2011-08-01 | 2012-07-30 | Dispositivo phemt ad arricchimento/svuotamento e relativo metodo di fabbricazione |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ITTO20120675A1 true ITTO20120675A1 (it) | 2013-02-02 |
Family
ID=44653489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT000675A ITTO20120675A1 (it) | 2011-08-01 | 2012-07-30 | Dispositivo phemt ad arricchimento/svuotamento e relativo metodo di fabbricazione |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8610173B2 (it) |
| EP (1) | EP2555242B1 (it) |
| ES (1) | ES2518917T3 (it) |
| IT (1) | ITTO20120675A1 (it) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7501669B2 (en) | 2003-09-09 | 2009-03-10 | Cree, Inc. | Wide bandgap transistor devices with field plates |
| US9773877B2 (en) | 2004-05-13 | 2017-09-26 | Cree, Inc. | Wide bandgap field effect transistors with source connected field plates |
| US11791385B2 (en) | 2005-03-11 | 2023-10-17 | Wolfspeed, Inc. | Wide bandgap transistors with gate-source field plates |
| EP2040299A1 (en) * | 2007-09-12 | 2009-03-25 | Forschungsverbund Berlin e.V. | Electrical devices having improved transfer characteristics and method for tailoring the transfer characteristics of such an electrical device |
| US9847411B2 (en) * | 2013-06-09 | 2017-12-19 | Cree, Inc. | Recessed field plate transistor structures |
| US9679981B2 (en) | 2013-06-09 | 2017-06-13 | Cree, Inc. | Cascode structures for GaN HEMTs |
| US9755059B2 (en) | 2013-06-09 | 2017-09-05 | Cree, Inc. | Cascode structures with GaN cap layers |
| US9502535B2 (en) * | 2015-04-10 | 2016-11-22 | Cambridge Electronics, Inc. | Semiconductor structure and etch technique for monolithic integration of III-N transistors |
| US10720428B2 (en) * | 2015-11-10 | 2020-07-21 | Qorvo Us, Inc. | High bandgap Schottky contact layer device |
| US10811407B2 (en) * | 2019-02-04 | 2020-10-20 | Win Semiconductor Corp. | Monolithic integration of enhancement mode and depletion mode field effect transistors |
| US11177379B2 (en) * | 2019-06-19 | 2021-11-16 | Win Semiconductors Corp. | Gate-sinking pHEMTs having extremely uniform pinch-off/threshold voltage |
| US11081485B2 (en) * | 2019-10-23 | 2021-08-03 | Win Semiconductors Corp. | Monolithic integrated circuit device having gate-sinking pHEMTs |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2551427B2 (ja) | 1987-03-12 | 1996-11-06 | 富士通株式会社 | 半導体装置及びその製造方法 |
| JPH02148740A (ja) | 1988-11-29 | 1990-06-07 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| KR100379619B1 (ko) | 2000-10-13 | 2003-04-10 | 광주과학기술원 | 단일집적 ｅ／ｄ 모드 ｈｅｍｔ 및 그 제조방법 |
| US6703638B2 (en) | 2001-05-21 | 2004-03-09 | Tyco Electronics Corporation | Enhancement and depletion-mode phemt device having two ingap etch-stop layers |
| US7449728B2 (en) | 2003-11-24 | 2008-11-11 | Tri Quint Semiconductor, Inc. | Monolithic integrated enhancement mode and depletion mode field effect transistors and method of making the same |
| US7183592B2 (en) | 2004-05-26 | 2007-02-27 | Raytheon Company | Field effect transistor |
| US20060175631A1 (en) | 2005-02-04 | 2006-08-10 | Raytheon Company | Monolithic integrated circuit having enhanced breakdown voltage |
| US7321132B2 (en) | 2005-03-15 | 2008-01-22 | Lockheed Martin Corporation | Multi-layer structure for use in the fabrication of integrated circuit devices and methods for fabrication of same |
| JP5431652B2 (ja) * | 2007-04-02 | 2014-03-05 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP2008263146A (ja) | 2007-04-13 | 2008-10-30 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| JP2009032729A (ja) | 2007-07-24 | 2009-02-12 | Sony Corp | スイッチ素子および電子機器 |
| JP2010016089A (ja) | 2008-07-02 | 2010-01-21 | Nec Electronics Corp | 電界効果トランジスタ、その製造方法、及び半導体装置 |
| US8390000B2 (en) | 2009-08-28 | 2013-03-05 | Transphorm Inc. | Semiconductor devices with field plates |
-
2012
- 2012-07-30 IT IT000675A patent/ITTO20120675A1/it unknown
- 2012-07-30 US US13/561,860 patent/US8610173B2/en not_active Expired - Fee Related
- 2012-07-31 ES ES12178617.2T patent/ES2518917T3/es active Active
- 2012-07-31 EP EP12178617.2A patent/EP2555242B1/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20130062667A1 (en) | 2013-03-14 |
| EP2555242B1 (en) | 2014-07-23 |
| ES2518917T3 (es) | 2014-11-05 |
| EP2555242A1 (en) | 2013-02-06 |
| US8610173B2 (en) | 2013-12-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| HUS2300021I1 (hu) | Anti-IL-36R antitestek | |
| LTC2635601I2 (lt) | Antikūnai prieš il-23 | |
| ITTO20120675A1 (it) | Dispositivo phemt ad arricchimento/svuotamento e relativo metodo di fabbricazione | |
| HUE038391T2 (hu) | Bromodomén inhibitorok | |
| CO6811812A2 (es) | Anticuerpo anti-b7-h3 | |
| IL231777A0 (en) | Antibodies against tl1a and uses thereof | |
| CR20140127A (es) | Anticuerpo anti-abtcr | |
| SI4403579T1 (sl) | Formulacija za protitelo anti-alfa4beta7 | |
| BR112014012137A2 (pt) | anticorpos anti-fgfr2 e suas utilizações | |
| CO6930343A2 (es) | Conjunto conntenedor y método asociado | |
| HRP20182098T1 (hr) | Anti-angptl3 antitijela i njihove primjene | |
| BR112013022161A2 (pt) | dispositivo para injeção | |
| NO346172B1 (no) | Sentreringsanordning | |
| BR112014002553A2 (pt) | dispositivo | |
| BR112013031026A2 (pt) | terminal de conexão e método para fabricação do terminal de conexão | |
| BR112013029674A2 (pt) | dispositivo para manuseio e método | |
| FI10635U1 (fi) | Laitteisto | |
| DK2715050T3 (da) | Tilpropningsanordning | |
| EP2746767A4 (en) | MICROCHIP | |
| CO6841994A2 (es) | Anticuerpos | |
| BR112014005056A2 (pt) | dispositivo magnético | |
| EP2684217A4 (en) | SEMICONDUCTOR COMPONENT | |
| DE102011007233A8 (de) | Transportvorrichtung | |
| UA24552S (uk) | Палета | |
| FI9347U1 (fi) | Kuormalava |