IT201700064155A1 - Transistore hemt con alta resistenza allo stress in stato spento e relativo metodo di fabbricazione - Google Patents

Transistore hemt con alta resistenza allo stress in stato spento e relativo metodo di fabbricazione

Info

Publication number
IT201700064155A1
IT201700064155A1 IT102017000064155A IT201700064155A IT201700064155A1 IT 201700064155 A1 IT201700064155 A1 IT 201700064155A1 IT 102017000064155 A IT102017000064155 A IT 102017000064155A IT 201700064155 A IT201700064155 A IT 201700064155A IT 201700064155 A1 IT201700064155 A1 IT 201700064155A1
Authority
IT
Italy
Prior art keywords
state
high stress
stress resistance
hemt transistor
relative manufacturing
Prior art date
Application number
IT102017000064155A
Other languages
English (en)
Inventor
Ferdinando Iucolano
Alessandro Chini
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT102017000064155A priority Critical patent/IT201700064155A1/it
Priority to EP18176875.5A priority patent/EP3413352A1/en
Priority to EP22184384.0A priority patent/EP4092756A3/en
Priority to US16/004,257 priority patent/US10516041B2/en
Priority to CN201810597967.0A priority patent/CN109037324B/zh
Priority to CN201820930797.9U priority patent/CN208861994U/zh
Publication of IT201700064155A1 publication Critical patent/IT201700064155A1/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/472—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
IT102017000064155A 2017-06-09 2017-06-09 Transistore hemt con alta resistenza allo stress in stato spento e relativo metodo di fabbricazione IT201700064155A1 (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT102017000064155A IT201700064155A1 (it) 2017-06-09 2017-06-09 Transistore hemt con alta resistenza allo stress in stato spento e relativo metodo di fabbricazione
EP18176875.5A EP3413352A1 (en) 2017-06-09 2018-06-08 High electron mobility transistor and manufacturing method thereof
EP22184384.0A EP4092756A3 (en) 2017-06-09 2018-06-08 High electron mobility transistor and manufacturing method thereof
US16/004,257 US10516041B2 (en) 2017-06-09 2018-06-08 HEMT transistor with high stress resilience during off state and manufacturing method thereof
CN201810597967.0A CN109037324B (zh) 2017-06-09 2018-06-11 在断态期间具有高应力顺应性的hemt晶体管及其制造方法
CN201820930797.9U CN208861994U (zh) 2017-06-09 2018-06-11 高电子迁移率晶体管

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT102017000064155A IT201700064155A1 (it) 2017-06-09 2017-06-09 Transistore hemt con alta resistenza allo stress in stato spento e relativo metodo di fabbricazione

Publications (1)

Publication Number Publication Date
IT201700064155A1 true IT201700064155A1 (it) 2018-12-09

Family

ID=60020531

Family Applications (1)

Application Number Title Priority Date Filing Date
IT102017000064155A IT201700064155A1 (it) 2017-06-09 2017-06-09 Transistore hemt con alta resistenza allo stress in stato spento e relativo metodo di fabbricazione

Country Status (4)

Country Link
US (1) US10516041B2 (it)
EP (2) EP3413352A1 (it)
CN (2) CN208861994U (it)
IT (1) IT201700064155A1 (it)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4092756A2 (en) 2017-06-09 2022-11-23 STMicroelectronics S.r.l. High electron mobility transistor and manufacturing method thereof

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10937873B2 (en) * 2019-01-03 2021-03-02 Cree, Inc. High electron mobility transistors having improved drain current drift and/or leakage current performance
CN112331718B (zh) 2019-08-05 2022-02-22 苏州捷芯威半导体有限公司 一种半导体器件及其制备方法
US11081485B2 (en) * 2019-10-23 2021-08-03 Win Semiconductors Corp. Monolithic integrated circuit device having gate-sinking pHEMTs
US11658233B2 (en) 2019-11-19 2023-05-23 Wolfspeed, Inc. Semiconductors with improved thermal budget and process of making semiconductors with improved thermal budget
CN113745331B (zh) * 2020-05-28 2024-12-06 中国科学院苏州纳米技术与纳米仿生研究所 Iii族氮化物凹槽栅常关型p沟道hemt器件及其制作方法
TWI741834B (zh) * 2020-10-15 2021-10-01 國立中山大學 氮化鎵高電子移動率電晶體
US12166102B2 (en) * 2020-12-18 2024-12-10 Innoscience (Suzhou) Technology Co., Ltd. Semiconductor device and method for manufacturing the same
US12027615B2 (en) 2020-12-18 2024-07-02 Innoscience (Suzhou) Technology Co., Ltd. Semiconductor device and method for manufacturing the same
US20230050475A1 (en) * 2021-08-13 2023-02-16 The Hong Kong University Of Science And Technology Wide-Bandgap Semiconductor Bipolar Charge-Trapping Non-Volatile Memory with Single Insulating Layer and A Fabrication Method Thereof
US20230299024A1 (en) * 2022-03-16 2023-09-21 Intel Corporation Bumping for liquid metal socket interconnects
US12464759B2 (en) * 2022-08-18 2025-11-04 Macom Technology Solutions Holdings, Inc. High electron mobility transistors having reduced drain current drift and methods of fabricating such devices
CN116825806A (zh) * 2022-09-07 2023-09-29 江苏镓宏半导体有限公司 一种提高氮化镓器件击穿电压的器件结构及制作方法
CN116151185B (zh) * 2022-10-11 2025-08-29 杭州电子科技大学 一种考虑位错影响的氮化镓hemt器件模型的建模方法
EP4471869A1 (en) * 2023-05-31 2024-12-04 STMicroelectronics International N.V. Hemt device having an improved conductivity and manufacturing process thereof
EP4654780A1 (en) * 2024-05-22 2025-11-26 STMicroelectronics International N.V. Normally-off hemt device with improved dynamic performances, and manufacturing method thereof
CN119364832B (zh) * 2024-12-26 2025-04-04 江苏能华微电子科技发展有限公司 一种高阈值稳定性GaN功率器件及其制备方法
CN120568799B (zh) * 2025-07-31 2025-10-17 苏州华太电子技术股份有限公司 一种GaN HEMT器件
CN121069147B (zh) * 2025-11-05 2026-01-30 浙江大学 场效应晶体管沟道迁移率的确定方法、装置和计算机设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2028694A2 (en) * 2007-08-24 2009-02-25 Sharp Kabushiki Kaisha Nitride semiconductor device and power converter including the same
EP2884539A1 (en) * 2013-12-16 2015-06-17 Renesas Electronics Corporation Semiconductor device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4182376B2 (ja) * 1998-12-02 2008-11-19 富士通株式会社 半導体装置
JP5325534B2 (ja) * 2008-10-29 2013-10-23 株式会社東芝 窒化物半導体素子
JP2010118556A (ja) * 2008-11-13 2010-05-27 Furukawa Electric Co Ltd:The 半導体装置および半導体装置の製造方法
JP5611653B2 (ja) * 2010-05-06 2014-10-22 株式会社東芝 窒化物半導体素子
US8653559B2 (en) * 2011-06-29 2014-02-18 Hrl Laboratories, Llc AlGaN/GaN hybrid MOS-HFET
KR101922120B1 (ko) * 2012-07-19 2018-11-26 삼성전자주식회사 고전자이동도 트랜지스터 및 그 제조방법
KR20150065240A (ko) * 2013-12-05 2015-06-15 서울반도체 주식회사 누설전류 억제 구조물을 구비하는 질화물계 트랜지스터
JP6251071B2 (ja) * 2014-02-05 2017-12-20 ルネサスエレクトロニクス株式会社 半導体装置
CN105261643B (zh) * 2015-09-22 2018-04-24 宁波大学 一种高击穿电压氮化镓基高电子迁移率晶体管
IT201700064155A1 (it) 2017-06-09 2018-12-09 St Microelectronics Srl Transistore hemt con alta resistenza allo stress in stato spento e relativo metodo di fabbricazione

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2028694A2 (en) * 2007-08-24 2009-02-25 Sharp Kabushiki Kaisha Nitride semiconductor device and power converter including the same
EP2884539A1 (en) * 2013-12-16 2015-06-17 Renesas Electronics Corporation Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4092756A2 (en) 2017-06-09 2022-11-23 STMicroelectronics S.r.l. High electron mobility transistor and manufacturing method thereof

Also Published As

Publication number Publication date
EP4092756A2 (en) 2022-11-23
EP4092756A3 (en) 2023-02-22
CN208861994U (zh) 2019-05-14
US10516041B2 (en) 2019-12-24
CN109037324A (zh) 2018-12-18
CN109037324B (zh) 2022-10-14
EP3413352A1 (en) 2018-12-12
US20180358456A1 (en) 2018-12-13

Similar Documents

Publication Publication Date Title
IT201700064155A1 (it) Transistore hemt con alta resistenza allo stress in stato spento e relativo metodo di fabbricazione
IL283550A (en) Chemically-modified rnai constructs and uses thereof
FI4059548T3 (fi) Injektiolaitekokoonpanoon sisältyviä tilantunnistusjärjestelmiä
IL287790A (en) Puncture core assembly and puncture device with puncture core assembly
EP3576036A4 (en) SERVICE EXECUTION DEVICE AND METHOD
EP4180361C0 (en) AUTOMATED STORAGE AND RETRIEVAL SYSTEM
EP3646850A4 (en) FILMOGENIC AGENT FOR COSMETIC PRODUCTS AND COSMETIC PRODUCTS CONTAINING IT
DK3411490T3 (da) Lavtryksseparator med en indvendig deler og anvendelser dertil
ITUA20162049A1 (it) Dispositivo elettronico con isolamento galvanico integrato e metodo di fabbricazione dello stesso
KR102425131B9 (ko) 그래핀 트랜지스터 및 이를 이용한 3진 논리 소자
EP3550193A4 (en) ELECTRONIC EXPANSION VALVE AND REFRIGERATION SYSTEM CONTAINING THE SAME
EP3750730A4 (en) POWERTRAIN AND VEHICLE EQUIPPED WITH IT
EP3647698A4 (en) STORAGE DEVICE AND REFRIGERATOR PROVIDED WITH SAME
ITUA20163063A1 (it) Serratura elettronica e relativo metodo di funzionamento
EP3705516A4 (en) COMPOSITION OF PLASTICIZER AND COMPOSITION OF RESIN CONTAINING IT
EP3676671C0 (en) ELECTRONIC DEVICE CONTAINING A CONTACT ELEMENT AND METHOD FOR MANUFACTURED IT
EP3840970C0 (de) Öffenbarer aufbau
KR102220445B9 (ko) 반도체 소자 및 그 제조 방법
IT201700088481A1 (it) Cucina modulare per veicolo ricreativo e relativo metodo di fabbricazione
PL3577279T3 (pl) Narzędzie do wtryskiwania i sposób wtryskiwania
EP3564313A4 (en) COMPOSITION OF THERMOCONDUCTIVE RESIN, AND COMPLEX CONTAINING IT
EP3808805A4 (en) COMPOSITION OF PLASTICIZER AND COMPOSITION OF RESIN CONTAINING IT
EP3805302A4 (en) COMPOSITION OF PLASTICIZER AND COMPOSITION OF RESIN CONTAINING IT
IT1401756B1 (it) Dispositivo elettronico integrato con struttura di terminazione di bordo e relativo metodo di fabbricazione.
KR102427747B9 (ko) 수소첨가 석유수지, 이의 제조방법 및 용도