IT201700073767A1 - Dispositivo mosfet di carburo di silicio avente un diodo integrato e relativo processo di fabbricazione - Google Patents

Dispositivo mosfet di carburo di silicio avente un diodo integrato e relativo processo di fabbricazione

Info

Publication number
IT201700073767A1
IT201700073767A1 IT102017000073767A IT201700073767A IT201700073767A1 IT 201700073767 A1 IT201700073767 A1 IT 201700073767A1 IT 102017000073767 A IT102017000073767 A IT 102017000073767A IT 201700073767 A IT201700073767 A IT 201700073767A IT 201700073767 A1 IT201700073767 A1 IT 201700073767A1
Authority
IT
Italy
Prior art keywords
manufacture
silicon carbide
mosfet device
carbide mosfet
integrated diode
Prior art date
Application number
IT102017000073767A
Other languages
English (en)
Inventor
Mario Giuseppe Saggio
Simone Rascuna'
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT102017000073767A priority Critical patent/IT201700073767A1/it
Priority to CN201821044765.5U priority patent/CN208796997U/zh
Priority to CN201810719162.9A priority patent/CN109216351B/zh
Priority to US16/027,060 priority patent/US10707202B2/en
Priority to EP18181848.5A priority patent/EP3425676B1/en
Publication of IT201700073767A1 publication Critical patent/IT201700073767A1/it
Priority to US16/780,769 priority patent/US11270993B2/en
Priority to US17/591,534 priority patent/US11916066B2/en
Priority to US18/416,702 priority patent/US20240243122A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/035—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon carbide [SiC] technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/146—VDMOS having built-in components the built-in components being Schottky barrier diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H10P30/2042—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors into crystalline silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
IT102017000073767A 2017-07-05 2017-07-05 Dispositivo mosfet di carburo di silicio avente un diodo integrato e relativo processo di fabbricazione IT201700073767A1 (it)

Priority Applications (8)

Application Number Priority Date Filing Date Title
IT102017000073767A IT201700073767A1 (it) 2017-07-05 2017-07-05 Dispositivo mosfet di carburo di silicio avente un diodo integrato e relativo processo di fabbricazione
CN201821044765.5U CN208796997U (zh) 2017-07-05 2018-07-03 集成金属氧化物半导体场效应晶体管器件
CN201810719162.9A CN109216351B (zh) 2017-07-05 2018-07-03 具有集成二极管的碳化硅mosfet器件及其制造方法
US16/027,060 US10707202B2 (en) 2017-07-05 2018-07-03 MOSFET device of silicon carbide having an integrated diode and manufacturing process thereof
EP18181848.5A EP3425676B1 (en) 2017-07-05 2018-07-05 Mosfet device of silicon carbide having an integrated diode and manufacturing process thereof
US16/780,769 US11270993B2 (en) 2017-07-05 2020-02-03 MOSFET device of silicon carbide having an integrated diode and manufacturing process thereof
US17/591,534 US11916066B2 (en) 2017-07-05 2022-02-02 MOSFET device of silicon carbide having an integrated diode and manufacturing process thereof
US18/416,702 US20240243122A1 (en) 2017-07-05 2024-01-18 Mosfet device of silicon carbide having an integrated diode and manufacturing process thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT102017000073767A IT201700073767A1 (it) 2017-07-05 2017-07-05 Dispositivo mosfet di carburo di silicio avente un diodo integrato e relativo processo di fabbricazione

Publications (1)

Publication Number Publication Date
IT201700073767A1 true IT201700073767A1 (it) 2019-01-05

Family

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IT102017000073767A IT201700073767A1 (it) 2017-07-05 2017-07-05 Dispositivo mosfet di carburo di silicio avente un diodo integrato e relativo processo di fabbricazione

Country Status (4)

Country Link
US (4) US10707202B2 (it)
EP (1) EP3425676B1 (it)
CN (2) CN109216351B (it)
IT (1) IT201700073767A1 (it)

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IT201700073767A1 (it) * 2017-07-05 2019-01-05 St Microelectronics Srl Dispositivo mosfet di carburo di silicio avente un diodo integrato e relativo processo di fabbricazione
CN110459540B (zh) * 2019-07-30 2021-10-26 创能动力科技有限公司 集成mosfet和二极管的半导体装置及其制造方法
US10777689B1 (en) 2019-10-18 2020-09-15 Hong Kong Applied Science and Technology Research Institute Company, Limited Silicon-carbide shielded-MOSFET embedded with a trench Schottky diode and heterojunction gate
US12328932B2 (en) * 2020-02-06 2025-06-10 Lg Electronics Inc. Metal-oxide semiconductor field effect transistor device and manufacturing method therefor
CN111446293A (zh) * 2020-03-25 2020-07-24 浙江大学 一种增强体二极管的碳化硅功率mosfet器件
US11004940B1 (en) 2020-07-31 2021-05-11 Genesic Semiconductor Inc. Manufacture of power devices having increased cross over current
WO2022047349A2 (en) 2020-08-31 2022-03-03 Genesic Semiconductor Inc. Design and manufacture of improved power devices
CN112271220B (zh) * 2020-10-10 2025-02-07 安徽芯塔电子科技有限公司 一种沟槽型肖特基二极管器件
CN217768387U (zh) * 2020-12-24 2022-11-08 意法半导体股份有限公司 Mosfet晶体管器件
IT202000032441A1 (it) * 2020-12-24 2022-06-24 Consiglio Nazionale Ricerche Dispositivo transistore mosfet in carburo di silicio avente migliorate caratteristiche e relativo procedimento di fabbricazione
US20230387290A1 (en) * 2021-02-25 2023-11-30 Xiamen San'an Integrated Circuit Co., Ltd. Silicon carbide metal oxide semiconductor field effect transistor device
CN117425965A (zh) * 2021-06-09 2024-01-19 三菱电机株式会社 碳化硅半导体装置
CN114220844B (zh) * 2021-12-15 2025-12-02 株洲中车时代半导体有限公司 集成sbd的碳化硅mosfet器件及其制备方法
CN115084271B (zh) * 2022-07-08 2025-02-14 深圳市坪芯微电子有限公司 一种碳化硅功率器件及其加工制造方法
CN115394856A (zh) * 2022-09-21 2022-11-25 南方科技大学 一种超级结mosfet及其制备方法
CN115241282B (zh) * 2022-09-23 2023-01-10 浙江大学杭州国际科创中心 一种SiC MOSFET器件及其制备方法
CN115832026A (zh) * 2022-12-05 2023-03-21 上海积塔半导体有限公司 半导体结构及其制备方法
CN115579399A (zh) * 2022-12-12 2023-01-06 深圳平创半导体有限公司 一种碳化硅mosfet元胞版图结构
CN115799344A (zh) * 2023-02-03 2023-03-14 深圳平创半导体有限公司 一种碳化硅jfet元胞结构及其制作方法
CN116314290A (zh) * 2023-03-14 2023-06-23 广东芯粤能半导体有限公司 半导体器件及其制备方法
WO2024206640A1 (en) * 2023-03-28 2024-10-03 Purdue Research Foundation Vertical dmosfets with buried shield for reduced gate-to-drain charge
US20250113531A1 (en) * 2023-09-28 2025-04-03 Wolfspeed, Inc. Power silicon carbide based semiconductor devices with selective jfet implants that are self-aligned with the well regions and methods of making such devices
CN117253923A (zh) * 2023-11-20 2023-12-19 深圳平创半导体有限公司 集成jbs的凸台分裂栅碳化硅mosfet及制备工艺
CN119545860B (zh) * 2024-11-27 2025-09-30 湖北九峰山实验室 集成结控二极管的沟槽型mosfet器件及电子设备
CN119545862B (zh) * 2025-01-21 2025-04-29 西安龙飞电气技术有限公司 一种抗辐照超结功率mos器件及其制备方法

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Publication number Publication date
CN208796997U (zh) 2019-04-26
US11270993B2 (en) 2022-03-08
CN109216351B (zh) 2023-06-27
US20220157807A1 (en) 2022-05-19
US11916066B2 (en) 2024-02-27
EP3425676B1 (en) 2022-12-28
US20200176442A1 (en) 2020-06-04
US20190013312A1 (en) 2019-01-10
EP3425676A1 (en) 2019-01-09
CN109216351A (zh) 2019-01-15
US20240243122A1 (en) 2024-07-18
US10707202B2 (en) 2020-07-07

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