IT7922105A0 - Processo per fabbricare contatti conduttivi in dispositivi semiconduttori. - Google Patents
Processo per fabbricare contatti conduttivi in dispositivi semiconduttori.Info
- Publication number
- IT7922105A0 IT7922105A0 IT7922105A IT2210579A IT7922105A0 IT 7922105 A0 IT7922105 A0 IT 7922105A0 IT 7922105 A IT7922105 A IT 7922105A IT 2210579 A IT2210579 A IT 2210579A IT 7922105 A0 IT7922105 A0 IT 7922105A0
- Authority
- IT
- Italy
- Prior art keywords
- semiconductor devices
- conductive contacts
- manufacturing conductive
- manufacturing
- contacts
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/012—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor
- H10D64/0121—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group IV semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
- H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
- H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/064—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/901,902 US4233337A (en) | 1978-05-01 | 1978-05-01 | Method for forming semiconductor contacts |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT7922105A0 true IT7922105A0 (it) | 1979-04-24 |
| IT1166765B IT1166765B (it) | 1987-05-06 |
Family
ID=25415026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT22105/79A IT1166765B (it) | 1978-05-01 | 1979-04-24 | Processo per fabbricare contatti conduttivi in dispositivi semiconduttori |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4233337A (it) |
| EP (1) | EP0005185B1 (it) |
| JP (1) | JPS54144176A (it) |
| CA (1) | CA1121070A (it) |
| DE (1) | DE2960971D1 (it) |
| IT (1) | IT1166765B (it) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4425379A (en) | 1981-02-11 | 1984-01-10 | Fairchild Camera & Instrument Corporation | Polycrystalline silicon Schottky diode array |
| SE8101994L (sv) * | 1981-03-27 | 1982-09-28 | Tove Per Arne | Elektronisk krets med schottky-felttransistor med kontaktelement med olika schottky-barrierhojd |
| JPS57162460A (en) * | 1981-03-31 | 1982-10-06 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS5975659A (ja) * | 1982-10-22 | 1984-04-28 | Fujitsu Ltd | 半導体装置の製造方法 |
| DE3314879A1 (de) * | 1983-04-25 | 1984-10-25 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von stabilen, niederohmigen kontakten in integrierten halbleiterschaltungen |
| US4501061A (en) * | 1983-05-31 | 1985-02-26 | Advanced Micro Devices, Inc. | Fluorine plasma oxidation of residual sulfur species |
| US4713355A (en) * | 1984-04-16 | 1987-12-15 | Trw Inc. | Bipolar transistor construction |
| US4648909A (en) * | 1984-11-28 | 1987-03-10 | Fairchild Semiconductor Corporation | Fabrication process employing special masks for the manufacture of high speed bipolar analog integrated circuits |
| IT1213261B (it) * | 1984-12-20 | 1989-12-14 | Sgs Thomson Microelectronics | Dispositivo a semiconduttore con metallizzazione a piu' spessori eprocedimento per la sua fabbricazione. |
| DE3446789A1 (de) * | 1984-12-21 | 1986-07-03 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Verfahren zum herstellen von halbleiterbauelementen |
| US4717678A (en) * | 1986-03-07 | 1988-01-05 | International Business Machines Corporation | Method of forming self-aligned P contact |
| GB8711995D0 (en) * | 1987-05-21 | 1987-06-24 | Bsh Electronics Ltd | Vehicle antenna |
| US4894701A (en) * | 1988-05-09 | 1990-01-16 | General Electric Company | Semiconductor device detector and method of forming same |
| US5268316A (en) * | 1991-12-06 | 1993-12-07 | National Semiconductor Corporation | Fabrication process for Schottky diode with localized diode well |
| US6096629A (en) * | 1998-11-05 | 2000-08-01 | Taiwan Semiconductor Manufacturing Company | Uniform sidewall profile etch method for forming low contact leakage schottky diode contact |
| US7034402B1 (en) * | 2000-06-28 | 2006-04-25 | Intel Corporation | Device with segmented ball limiting metallurgy |
| US20070013014A1 (en) * | 2005-05-03 | 2007-01-18 | Shuwen Guo | High temperature resistant solid state pressure sensor |
| US7400042B2 (en) * | 2005-05-03 | 2008-07-15 | Rosemount Aerospace Inc. | Substrate with adhesive bonding metallization with diffusion barrier |
| US7628309B1 (en) * | 2005-05-03 | 2009-12-08 | Rosemount Aerospace Inc. | Transient liquid phase eutectic bonding |
| US7538401B2 (en) | 2005-05-03 | 2009-05-26 | Rosemount Aerospace Inc. | Transducer for use in harsh environments |
| US7737049B2 (en) | 2007-07-31 | 2010-06-15 | Qimonda Ag | Method for forming a structure on a substrate and device |
| US11349010B2 (en) * | 2019-12-30 | 2022-05-31 | Taiwan Semiconductor Manufacturing Company Ltd. | Schottky barrier diode with reduced leakage current and method of forming the same |
| KR102772710B1 (ko) * | 2020-01-22 | 2025-02-28 | 삼성디스플레이 주식회사 | 발광 소자 및 이를 포함하는 표시 장치 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE341222B (it) * | 1967-11-15 | 1971-12-20 | Western Electric Co | |
| US3560278A (en) * | 1968-11-29 | 1971-02-02 | Motorola Inc | Alignment process for fabricating semiconductor devices |
| ZA739261B (en) * | 1973-01-15 | 1975-01-29 | Aerojet General Co | Process for recovery of minerals from acidic streams |
| US3995301A (en) * | 1973-03-23 | 1976-11-30 | Ibm Corporation | Novel integratable Schottky Barrier structure and a method for the fabrication thereof |
| US3906540A (en) * | 1973-04-02 | 1975-09-16 | Nat Semiconductor Corp | Metal-silicide Schottky diode employing an aluminum connector |
| US3956527A (en) * | 1973-04-16 | 1976-05-11 | Ibm Corporation | Dielectrically isolated Schottky Barrier structure and method of forming the same |
| US3900944A (en) * | 1973-12-19 | 1975-08-26 | Texas Instruments Inc | Method of contacting and connecting semiconductor devices in integrated circuits |
| US3904454A (en) * | 1973-12-26 | 1975-09-09 | Ibm | Method for fabricating minute openings in insulating layers during the formation of integrated circuits |
| US4018627A (en) * | 1975-09-22 | 1977-04-19 | Signetics Corporation | Method for fabricating semiconductor devices utilizing oxide protective layer |
-
1978
- 1978-05-01 US US05/901,902 patent/US4233337A/en not_active Expired - Lifetime
-
1979
- 1979-04-09 EP EP79101076A patent/EP0005185B1/de not_active Expired
- 1979-04-09 JP JP4209179A patent/JPS54144176A/ja active Granted
- 1979-04-09 DE DE7979101076T patent/DE2960971D1/de not_active Expired
- 1979-04-11 CA CA000325549A patent/CA1121070A/en not_active Expired
- 1979-04-24 IT IT22105/79A patent/IT1166765B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| IT1166765B (it) | 1987-05-06 |
| US4233337A (en) | 1980-11-11 |
| DE2960971D1 (en) | 1981-12-24 |
| JPS54144176A (en) | 1979-11-10 |
| JPS6232611B2 (it) | 1987-07-15 |
| CA1121070A (en) | 1982-03-30 |
| EP0005185B1 (de) | 1981-10-14 |
| EP0005185A1 (de) | 1979-11-14 |
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