IT7925899A0 - Struttura a circuito integrato. - Google Patents

Struttura a circuito integrato.

Info

Publication number
IT7925899A0
IT7925899A0 IT7925899A IT2589979A IT7925899A0 IT 7925899 A0 IT7925899 A0 IT 7925899A0 IT 7925899 A IT7925899 A IT 7925899A IT 2589979 A IT2589979 A IT 2589979A IT 7925899 A0 IT7925899 A0 IT 7925899A0
Authority
IT
Italy
Prior art keywords
integrated circuit
circuit structure
integrated
circuit
Prior art date
Application number
IT7925899A
Other languages
English (en)
Other versions
IT1123267B (it
Inventor
Andrew Gordon Francis Dingwall
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT7925899A0 publication Critical patent/IT7925899A0/it
Application granted granted Critical
Publication of IT1123267B publication Critical patent/IT1123267B/it

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01Manufacture or treatment
    • H10D86/03Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903FET configuration adapted for use as static memory cell
IT25899/79A 1978-10-03 1979-09-20 Struttura a circuito integrato IT1123267B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/948,103 US4724530A (en) 1978-10-03 1978-10-03 Five transistor CMOS memory cell including diodes

Publications (2)

Publication Number Publication Date
IT7925899A0 true IT7925899A0 (it) 1979-09-20
IT1123267B IT1123267B (it) 1986-04-30

Family

ID=25487263

Family Applications (1)

Application Number Title Priority Date Filing Date
IT25899/79A IT1123267B (it) 1978-10-03 1979-09-20 Struttura a circuito integrato

Country Status (6)

Country Link
US (1) US4724530A (it)
JP (1) JPS5550654A (it)
DE (1) DE2939290A1 (it)
FR (1) FR2438340A1 (it)
GB (1) GB2034517B (it)
IT (1) IT1123267B (it)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3174500D1 (en) * 1980-05-20 1986-06-05 Toshiba Kk Semiconductor device
JPS5721838A (en) * 1980-07-15 1982-02-04 Toshiba Corp Semiconductor device
JPS59130459A (ja) * 1983-01-17 1984-07-27 Hitachi Ltd 半導体メモリ集積回路装置
JPS6065547A (ja) * 1983-09-20 1985-04-15 Sharp Corp 半導体装置
DE3435752A1 (de) * 1984-09-28 1986-04-10 Siemens AG, 1000 Berlin und 8000 München Schaltung zur zwischenspeicherung digitaler signale
US5046044A (en) * 1988-12-21 1991-09-03 Texas Instruments Incorporated SEU hardened memory cell
US5016070A (en) * 1989-06-30 1991-05-14 Texas Instruments Incorporated Stacked CMOS sRAM with vertical transistors and cross-coupled capacitors
US5066613A (en) * 1989-07-13 1991-11-19 The United States Of America As Represented By The Secretary Of The Navy Process for making semiconductor-on-insulator device interconnects
JP2927463B2 (ja) * 1989-09-28 1999-07-28 株式会社日立製作所 半導体記憶装置
US5452247A (en) * 1989-12-20 1995-09-19 Fujitsu Limited Three-dimensional static random access memory device for avoiding disconnection among transistors of each memory cell
US5350933A (en) * 1990-02-21 1994-09-27 Sony Corporation Semiconductor CMOS static RAM with overlapping thin film transistors
US5206533A (en) * 1991-06-24 1993-04-27 Texas Instruments Incorporated Transistor device with resistive coupling
US5173754A (en) * 1992-02-03 1992-12-22 Micron Technology, Inc. Integrated circuit device with gate in sidewall
JPH06103781A (ja) * 1992-09-21 1994-04-15 Sharp Corp メモリセル回路
US5453950A (en) * 1995-01-24 1995-09-26 Cypress Semiconductor Corp. Five transistor memory cell with shared power line
US5689471A (en) * 1995-01-24 1997-11-18 Cypress Semiconductor Corp. Dummy cell for providing a reference voltage in a memory array
JP2748885B2 (ja) * 1995-03-06 1998-05-13 日本電気株式会社 半導体集積回路装置
US6667506B1 (en) 1999-04-06 2003-12-23 Peregrine Semiconductor Corporation Variable capacitor with programmability
US6690056B1 (en) 1999-04-06 2004-02-10 Peregrine Semiconductor Corporation EEPROM cell on SOI
US6205049B1 (en) 1999-08-26 2001-03-20 Integrated Device Technology, Inc. Five-transistor SRAM cell
WO2005050714A2 (en) * 2003-11-18 2005-06-02 Halliburton Energy Services, Inc. High temperature electronic devices
AU2004300123B2 (en) * 2003-11-18 2010-12-23 Halliburton Energy Services, Inc. A high temperature memory device
US7442932B2 (en) * 2003-11-18 2008-10-28 Halliburton Energy Services, Inc. High temperature imaging device
KR100746220B1 (ko) * 2004-01-12 2007-08-03 삼성전자주식회사 적층된 노드 콘택 구조체들과 적층된 박막 트랜지스터들을채택하는 반도체 집적회로들 및 그 제조방법들
JP4805655B2 (ja) * 2005-10-28 2011-11-02 株式会社東芝 半導体記憶装置
US20090251960A1 (en) * 2008-04-07 2009-10-08 Halliburton Energy Services, Inc. High temperature memory device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3521242A (en) * 1967-05-02 1970-07-21 Rca Corp Complementary transistor write and ndro for memory cell
CH581904A5 (it) * 1974-08-29 1976-11-15 Centre Electron Horloger
US3990056A (en) * 1974-10-09 1976-11-02 Rockwell International Corporation High speed memory cell
US4189782A (en) * 1978-08-07 1980-02-19 Rca Corporation Memory organization
US4196443A (en) * 1978-08-25 1980-04-01 Rca Corporation Buried contact configuration for CMOS/SOS integrated circuits

Also Published As

Publication number Publication date
DE2939290C2 (it) 1989-03-23
IT1123267B (it) 1986-04-30
US4724530A (en) 1988-02-09
FR2438340A1 (fr) 1980-04-30
FR2438340B1 (it) 1984-12-07
JPS616549B2 (it) 1986-02-27
GB2034517B (en) 1983-05-11
DE2939290A1 (de) 1980-04-10
GB2034517A (en) 1980-06-04
JPS5550654A (en) 1980-04-12

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