IT8023632A0 - Circuito integrato monolitico cosiddetto cmos. - Google Patents
Circuito integrato monolitico cosiddetto cmos.Info
- Publication number
- IT8023632A0 IT8023632A0 IT8023632A IT2363280A IT8023632A0 IT 8023632 A0 IT8023632 A0 IT 8023632A0 IT 8023632 A IT8023632 A IT 8023632A IT 2363280 A IT2363280 A IT 2363280A IT 8023632 A0 IT8023632 A0 IT 8023632A0
- Authority
- IT
- Italy
- Prior art keywords
- integrated circuit
- monolithic integrated
- called cmos
- cmos
- called
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2929869A DE2929869C2 (de) | 1979-07-24 | 1979-07-24 | Monolithisch integrierte CMOS-Inverterschaltungsanordnung |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| IT8023632A0 true IT8023632A0 (it) | 1980-07-23 |
| IT8023632A1 IT8023632A1 (it) | 1982-01-23 |
| IT1193544B IT1193544B (it) | 1988-07-08 |
Family
ID=6076567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT23632/80A IT1193544B (it) | 1979-07-24 | 1980-07-23 | Circuito integrato monolitico cosiddetto cmos |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5618459A (it) |
| DE (1) | DE2929869C2 (it) |
| FR (1) | FR2462025A1 (it) |
| GB (1) | GB2054955B (it) |
| IE (1) | IE50350B1 (it) |
| IT (1) | IT1193544B (it) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57177554A (en) * | 1981-04-27 | 1982-11-01 | Hitachi Ltd | Semiconductor integrated circuit device |
| EP0166386A3 (de) * | 1984-06-29 | 1987-08-05 | Siemens Aktiengesellschaft | Integrierte Schaltung in komplementärer Schaltungstechnik |
| ATE75877T1 (de) * | 1985-08-26 | 1992-05-15 | Siemens Ag | Integrierte schaltung in komplementaerer schaltungstechnik mit einem substratvorspannungs- generator und einer schottky-diode. |
| US11955476B2 (en) | 2008-12-23 | 2024-04-09 | Schottky Lsi, Inc. | Super CMOS devices on a microelectronics system |
| US8476689B2 (en) | 2008-12-23 | 2013-07-02 | Augustine Wei-Chun Chang | Super CMOS devices on a microelectronics system |
| US9853643B2 (en) | 2008-12-23 | 2017-12-26 | Schottky Lsi, Inc. | Schottky-CMOS asynchronous logic cells |
| US11342916B2 (en) | 2008-12-23 | 2022-05-24 | Schottky Lsi, Inc. | Schottky-CMOS asynchronous logic cells |
| EP3216051A4 (en) * | 2014-10-10 | 2018-06-06 | Schottky Lsi, Inc. | SUPER CMOS (SCMOStm) DEVICES ON A MICROELECTRONIC SYSTEM |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3673428A (en) * | 1970-09-18 | 1972-06-27 | Rca Corp | Input transient protection for complementary insulated gate field effect transistor integrated circuit device |
| JPS568501B2 (it) * | 1973-05-12 | 1981-02-24 | ||
| JPS5211880A (en) * | 1975-07-18 | 1977-01-29 | Toshiba Corp | Semiconductor integrated circuit device |
| JPS5211885A (en) * | 1975-07-18 | 1977-01-29 | Toshiba Corp | Semiconductor integrated circuit device |
| JPS6043666B2 (ja) * | 1976-10-18 | 1985-09-30 | 株式会社日立製作所 | 相補形ｍｉｓ半導体装置 |
| JPS53105985A (en) * | 1977-02-28 | 1978-09-14 | Nec Corp | Conmplementary-type insulating gate field effect transistor |
-
1979
- 1979-07-24 DE DE2929869A patent/DE2929869C2/de not_active Expired
-
1980
- 1980-06-19 GB GB8020110A patent/GB2054955B/en not_active Expired
- 1980-07-18 JP JP9860980A patent/JPS5618459A/ja active Pending
- 1980-07-23 IE IE1530/80A patent/IE50350B1/en unknown
- 1980-07-23 FR FR8016206A patent/FR2462025A1/fr active Granted
- 1980-07-23 IT IT23632/80A patent/IT1193544B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| DE2929869A1 (de) | 1981-02-19 |
| JPS5618459A (en) | 1981-02-21 |
| IT1193544B (it) | 1988-07-08 |
| IT8023632A1 (it) | 1982-01-23 |
| DE2929869C2 (de) | 1986-04-30 |
| IE50350B1 (en) | 1986-04-02 |
| IE801530L (en) | 1981-01-24 |
| GB2054955B (en) | 1983-05-11 |
| GB2054955A (en) | 1981-02-18 |
| FR2462025B1 (it) | 1983-11-18 |
| FR2462025A1 (fr) | 1981-02-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ES481550A0 (es) | Micropastilla de circuito integrado. | |
| IT7825213A0 (it) | Struttura di circuito integrato. | |
| IT7825708A0 (it) | Circuito di ingresso ccd. | |
| IT8022957A0 (it) | Assieme circuitale integrato. | |
| IT8025898A0 (it) | Trasduttore di pressione con circuito integrato di hall(hall-ic). | |
| IT8025670A0 (it) | Circuito di prova dotato di dispositivi mos. | |
| IT7925899A0 (it) | Struttura a circuito integrato. | |
| IT7828238A0 (it) | Circuito integrato perfezionato. | |
| IT8024723A0 (it) | Circuito rivelatore di transizioni. | |
| NL191132C (nl) | Afstemschakeling. | |
| NL7710000A (nl) | Solid-state televisiecamera. | |
| IT8020126A0 (it) | Circuito integrato a semiconduttori. | |
| IT7827991A0 (it) | Circuito separatore. | |
| IT7922391A0 (it) | Circuito di linearizzazione. | |
| IT8224720A0 (it) | Circuito demultiplatore. | |
| IT7827013A0 (it) | Circuito integrato semiconduttore. | |
| IT8023632A0 (it) | Circuito integrato monolitico cosiddetto cmos. | |
| IT1207305B (it) | Diodo per circuito integrato monolitico. | |
| IT7830411A0 (it) | Circuito logico integrato perfezionato. | |
| NO155556C (no) | Innstillingskrets. | |
| IT8021901A0 (it) | Circuito ibrido. | |
| IT8021867A0 (it) | Circuito di linea. | |
| IT8020429A0 (it) | Sintonizzatori per televisori. | |
| IT7829827A0 (it) | Complesso di circuito televisivo. | |
| IT7829767A0 (it) | Circuito integrato. |