IT8026985A0 - Dispositivo semiconduttore. - Google Patents

Dispositivo semiconduttore.

Info

Publication number: IT8026985A0
Authority: IT; Italy
Prior art keywords: semiconductor device; semiconductor
Prior art date: 1980-03-10

Application number

IT8026985A

Other languages

English (en)

Other versions

IT1194011B (it

Inventor

Wagenaar Kornelis Jan

De Graaff Hendrik Cornelis

Appels Johannes Arnoldus

Original Assignee

Philips Gloeilampenfabrikien N

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1980-03-10

Filing date

1980-12-29

Publication date

1980-12-29

1980-12-29 Application filed by Philips Gloeilampenfabrikien N filed Critical Philips Gloeilampenfabrikien N

1980-12-29 Publication of IT8026985A0 publication Critical patent/IT8026985A0/it

1988-08-31 Application granted granted Critical

1988-08-31 Publication of IT1194011B publication Critical patent/IT1194011B/it

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/663—Vertical DMOS [VDMOS] FETs having both source contacts and drain contacts on the same surface, i.e. up-drain VDMOS
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/137—Collector regions of BJTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W15/00—Highly-doped buried regions of integrated devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W15/00—Highly-doped buried regions of integrated devices
- H10W15/01—Manufacture or treatment

IT26985/80A 1980-03-10 1980-12-29 Dispositivo semiconduttore IT1194011B (it)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
NLAANVRAGE8001409,A NL186665C (nl)	1980-03-10	1980-03-10	Halfgeleiderinrichting.

Publications (2)

Publication Number	Publication Date
IT8026985A0 true IT8026985A0 (it)	1980-12-29
IT1194011B IT1194011B (it)	1988-08-31

Family

ID=19834952

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IT26985/80A IT1194011B (it)	1980-03-10	1980-12-29	Dispositivo semiconduttore

Country Status (9)

Country	Link
US (1)	US4409606A (it)
JP (1)	JPS56126966A (it)
CA (1)	CA1155971A (it)
DE (1)	DE3047738C2 (it)
FR (1)	FR2477776A1 (it)
GB (1)	GB2071412B (it)
IT (1)	IT1194011B (it)
NL (1)	NL186665C (it)
SE (1)	SE8009091L (it)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
NL187415C (nl) *	1980-09-08	1991-09-16	Philips Nv	Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte.
CA1200622A (en) *	1981-12-04	1986-02-11	Western Electric Company, Incorporated	Collector for radiation-generated current carriers in a semiconductor structure
US4985373A (en) *	1982-04-23	1991-01-15	At&T Bell Laboratories	Multiple insulating layer for two-level interconnected metallization in semiconductor integrated circuit structures
DE3215652A1 (de) *	1982-04-27	1983-10-27	Siemens AG, 1000 Berlin und 8000 München	Integrierbarer bipolarer transistor
US4942440A (en) *	1982-10-25	1990-07-17	General Electric Company	High voltage semiconductor devices with reduced on-resistance
US4862242A (en) *	1983-12-05	1989-08-29	General Electric Company	Semiconductor wafer with an electrically-isolated semiconductor device
US4622568A (en) *	1984-05-09	1986-11-11	Eaton Corporation	Planar field-shaped bidirectional power FET
US4661838A (en) *	1985-10-24	1987-04-28	General Electric Company	High voltage semiconductor devices electrically isolated from an integrated circuit substrate
US4963951A (en) *	1985-11-29	1990-10-16	General Electric Company	Lateral insulated gate bipolar transistors with improved latch-up immunity
US4823173A (en) *	1986-01-07	1989-04-18	Harris Corporation	High voltage lateral MOS structure with depleted top gate region
US4868921A (en) *	1986-09-05	1989-09-19	General Electric Company	High voltage integrated circuit devices electrically isolated from an integrated circuit substrate
US4717679A (en) *	1986-11-26	1988-01-05	General Electric Company	Minimal mask process for fabricating a lateral insulated gate semiconductor device
US4866495A (en) *	1987-05-27	1989-09-12	International Rectifier Corporation	High power MOSFET and integrated control circuit therefor for high-side switch application
US5023678A (en) *	1987-05-27	1991-06-11	International Rectifier Corporation	High power MOSFET and integrated control circuit therefor for high-side switch application
FR2650122B1 (fr) *	1989-07-21	1991-11-08	Motorola Semiconducteurs	Dispositif semi-conducteur a haute tension et son procede de fabrication
SE500814C2 (sv) *	1993-01-25	1994-09-12	Ericsson Telefon Ab L M	Halvledaranordning i ett tunt aktivt skikt med hög genombrottsspänning
SE500815C2 (sv) *	1993-01-25	1994-09-12	Ericsson Telefon Ab L M	Dielektriskt isolerad halvledaranordning och förfarande för dess framställning
FR2708144A1 (fr) *	1993-07-22	1995-01-27	Philips Composants	Dispositif intégré associant un transistor bipolaire à un transistor à effet de champ.
JP3412332B2 (ja) *	1995-04-26	2003-06-03	株式会社デンソー	半導体装置
SE512661C2 (sv) *	1996-11-13	2000-04-17	Ericsson Telefon Ab L M	Lateral bipolär hybridtransistor med fälteffektmod och förfarande vid densamma
US6011297A (en) *	1997-07-18	2000-01-04	Advanced Micro Devices,Inc.	Use of multiple slots surrounding base region of a bipolar junction transistor to increase cumulative breakdown voltage
US5859469A (en) *	1997-07-18	1999-01-12	Advanced Micro Devices, Inc.	Use of tungsten filled slots as ground plane in integrated circuit structure
US5912501A (en) *	1997-07-18	1999-06-15	Advanced Micro Devices, Inc.	Elimination of radius of curvature effects of p-n junction avalanche breakdown using slots
US6392274B1 (en) *	2000-04-04	2002-05-21	United Microelectronics Corp.	High-voltage metal-oxide-semiconductor transistor
DE102009039056A1 (de)	2008-11-12	2010-05-20	Sew-Eurodrive Gmbh & Co. Kg	Asynchronmotor und Verfahren zum Herstellen eines Asynchronmotor
US10553633B2 (en) *	2014-05-30	2020-02-04	Klaus Y.J. Hsu	Phototransistor with body-strapped base

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3564356A (en) *	1968-10-24	1971-02-16	Tektronix Inc	High voltage integrated circuit transistor
DE2229122A1 (de) *	1972-06-15	1974-01-10	Bosch Gmbh Robert	Integrierter schaltkreis
CA1131801A (en) *	1978-01-18	1982-09-14	Johannes A. Appels	Semiconductor device
US4329703A (en) *	1978-07-21	1982-05-11	Monolithic Memories, Inc.	Lateral PNP transistor
NL184551C (nl) *	1978-07-24	1989-08-16	Philips Nv	Veldeffekttransistor met geisoleerde stuurelektrode.

1980
- 1980-03-10 NL NLAANVRAGE8001409,A patent/NL186665C/xx not_active IP Right Cessation
- 1980-12-18 DE DE3047738A patent/DE3047738C2/de not_active Expired
- 1980-12-19 GB GB8040886A patent/GB2071412B/en not_active Expired
- 1980-12-23 SE SE8009091A patent/SE8009091L/ not_active Application Discontinuation
- 1980-12-29 JP JP18949680A patent/JPS56126966A/ja active Granted
- 1980-12-29 IT IT26985/80A patent/IT1194011B/it active
- 1980-12-29 FR FR8027683A patent/FR2477776A1/fr active Granted
- 1980-12-30 CA CA000367727A patent/CA1155971A/en not_active Expired
1981
- 1981-01-08 US US06/223,199 patent/US4409606A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
DE3047738C2 (de)	1986-07-17
NL8001409A (nl)	1981-10-01
IT1194011B (it)	1988-08-31
NL186665B (nl)	1990-08-16
GB2071412A (en)	1981-09-16
NL186665C (nl)	1992-01-16
CA1155971A (en)	1983-10-25
FR2477776A1 (fr)	1981-09-11
FR2477776B1 (it)	1984-08-24
JPH0127592B2 (it)	1989-05-30
SE8009091L (sv)	1981-09-11
JPS56126966A (en)	1981-10-05
US4409606A (en)	1983-10-11
GB2071412B (en)	1984-04-18
DE3047738A1 (de)	1981-09-24

Legal Events

Date	Code	Title	Description
1999-10-27	TA	Fee payment date (situation as of event date), data collected since 19931001	Effective date: 19960111

Publication	Publication Date	Title
SE8105257L (sv)	1982-03-09	Halvledaranordning
DE3177183D1 (de)	1990-06-21	Halbleiterspeichergeraet.
IT7919305A0 (it)	1979-01-15	Dispositivo semiconduttore.
NL186665C (nl)	1992-01-16	Halfgeleiderinrichting.
NO813233L (no)	1981-09-23	Doseringsanordning.
NL188125C (nl)	1992-04-01	Halfgeleiderfotodiode.
NO159975C (no)	1989-03-01	Spenneanordning.
IT8322373A0 (it)	1983-08-02	Dispositivo semiconduttore.
NL189271C (nl)	1993-02-16	Halfgeleiderinrichting.
NL185534C (nl)	1990-05-01	Bedieningsinrichting.
DE3177173D1 (de)	1990-05-23	Halbleiterspeichervorrichtung.
IT7921595A0 (it)	1979-04-04	Dispositivo semiconduttore.
IT8124803A0 (it)	1981-10-30	Dispositivo semiconduttore
IT8320809A0 (it)	1983-04-27	Dispositivo dispergente.
IT7919985A0 (it)	1979-02-07	Dispositivo semiconduttore.
IT8324175A0 (it)	1983-12-14	Dispositivo semiconduttore.
IT8121534A0 (it)	1981-05-06	Dispositivo semiconduttore.
IT8120182A0 (it)	1981-03-06	Dispositivo di trafilatura.
NL186886C (nl)	1992-03-16	Halfgeleiderinrichting.
FI810825A7 (fi)	1981-09-19	Piirustuslaite.
DE3381832D1 (de)	1990-10-04	Halbleiterlaservorrichtung.
IT8019838A0 (it)	1980-02-11	Dispositivo semiconduttore.
IT7924514A0 (it)	1979-07-20	Dispositivo semiconduttore.
IT8423942A0 (it)	1984-12-06	Dispositivo semiconduttore.
EP0071648A4 (fr)	1985-02-18	Dispositif semi-conducteur.