IT8048498A0 - Perfezionamento nelle strutture a semiconduttore ad esempio per transistori e procedimento per la loro fabbricazione - Google Patents

Perfezionamento nelle strutture a semiconduttore ad esempio per transistori e procedimento per la loro fabbricazione

Info

Publication number
IT8048498A0
IT8048498A0 IT8048498A IT4849880A IT8048498A0 IT 8048498 A0 IT8048498 A0 IT 8048498A0 IT 8048498 A IT8048498 A IT 8048498A IT 4849880 A IT4849880 A IT 4849880A IT 8048498 A0 IT8048498 A0 IT 8048498A0
Authority
IT
Italy
Prior art keywords
transistors
improvement
procedure
manufacturing
semiconductor structures
Prior art date
Application number
IT8048498A
Other languages
English (en)
Other versions
IT1128530B (it
Inventor
Martin Feist Wolfgang
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of IT8048498A0 publication Critical patent/IT8048498A0/it
Application granted granted Critical
Publication of IT1128530B publication Critical patent/IT1128530B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/861—Vertical heterojunction BJTs having an emitter region comprising one or more non-monocrystalline elements of Group IV, e.g. amorphous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0121—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] in regions recessed from the surface, e.g. in trenches or grooves
    • H10W10/0124—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] in regions recessed from the surface, e.g. in trenches or grooves the regions having non-rectangular shapes, e.g. rounded
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
    • H10W10/0126—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics introducing electrical active impurities in local oxidation regions to create channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/168—V-Grooves
IT48498/80A 1979-05-25 1980-04-23 Perfezionamento nelle strutture a semiconduttore ad esempio per transistori e procedimento per la loro fabbricazione IT1128530B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/042,686 US4289550A (en) 1979-05-25 1979-05-25 Method of forming closely spaced device regions utilizing selective etching and diffusion

Publications (2)

Publication Number Publication Date
IT8048498A0 true IT8048498A0 (it) 1980-04-23
IT1128530B IT1128530B (it) 1986-05-28

Family

ID=21923236

Family Applications (1)

Application Number Title Priority Date Filing Date
IT48498/80A IT1128530B (it) 1979-05-25 1980-04-23 Perfezionamento nelle strutture a semiconduttore ad esempio per transistori e procedimento per la loro fabbricazione

Country Status (7)

Country Link
US (1) US4289550A (it)
JP (1) JPS55157258A (it)
CA (1) CA1144659A (it)
DE (1) DE3020140A1 (it)
FR (1) FR2457565B1 (it)
GB (1) GB2050056B (it)
IT (1) IT1128530B (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5827341A (ja) * 1981-08-11 1983-02-18 Fujitsu Ltd 半導体装置の製造方法
US4372033A (en) * 1981-09-08 1983-02-08 Ncr Corporation Method of making coplanar MOS IC structures
US4435898A (en) 1982-03-22 1984-03-13 International Business Machines Corporation Method for making a base etched transistor integrated circuit
JPS58197877A (ja) * 1982-05-14 1983-11-17 Nec Corp 半導体集積回路装置の製造方法
GB8507624D0 (en) * 1985-03-23 1985-05-01 Standard Telephones Cables Ltd Semiconductor devices
US4933295A (en) * 1987-05-08 1990-06-12 Raytheon Company Method of forming a bipolar transistor having closely spaced device regions

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3083441A (en) * 1959-04-13 1963-04-02 Texas Instruments Inc Method for fabricating transistors
NL170348C (nl) * 1970-07-10 1982-10-18 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een tegen dotering en tegen thermische oxydatie maskerend masker wordt aangebracht, de door de vensters in het masker vrijgelaten delen van het oppervlak worden onderworpen aan een etsbehandeling voor het vormen van verdiepingen en het halfgeleiderlichaam met het masker wordt onderworpen aan een thermische oxydatiebehandeling voor het vormen van een oxydepatroon dat de verdiepingen althans ten dele opvult.
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
NL173110C (nl) * 1971-03-17 1983-12-01 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een uit ten minste twee deellagen van verschillend materiaal samengestelde maskeringslaag wordt aangebracht.
NL170901C (nl) * 1971-04-03 1983-01-03 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US4026736A (en) * 1974-01-03 1977-05-31 Motorola, Inc. Integrated semiconductor structure with combined dielectric and PN junction isolation including fabrication method therefor
JPS5138983A (it) * 1974-09-30 1976-03-31 Hitachi Ltd
JPS51128268A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
DE2605641C3 (de) * 1976-02-12 1979-12-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Hochfrequenztransistor und Verfahren zu seiner Herstellung
US4066473A (en) * 1976-07-15 1978-01-03 Fairchild Camera And Instrument Corporation Method of fabricating high-gain transistors
US4115797A (en) * 1976-10-04 1978-09-19 Fairchild Camera And Instrument Corporation Integrated injection logic with heavily doped injector base self-aligned with injector emitter and collector
CA1090006A (en) * 1976-12-27 1980-11-18 Wolfgang M. Feist Semiconductor structures and methods for manufacturing such structures
US4168999A (en) * 1978-12-26 1979-09-25 Fairchild Camera And Instrument Corporation Method for forming oxide isolated integrated injection logic semiconductor structures having minimal encroachment utilizing special masking techniques

Also Published As

Publication number Publication date
IT1128530B (it) 1986-05-28
US4289550A (en) 1981-09-15
JPH0243336B2 (it) 1990-09-28
JPS55157258A (en) 1980-12-06
DE3020140A1 (de) 1980-12-04
GB2050056A (en) 1980-12-31
GB2050056B (en) 1984-02-01
FR2457565A1 (fr) 1980-12-19
FR2457565B1 (fr) 1985-11-15
CA1144659A (en) 1983-04-12

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