IT8820006A0 - Metodo e apparecchiatura per la misura del tempo di vita su giunzioni p_n a semiconduttore tramite effetto fotovoltaiico. - Google Patents

Metodo e apparecchiatura per la misura del tempo di vita su giunzioni p_n a semiconduttore tramite effetto fotovoltaiico.

Info

Publication number
IT8820006A0
IT8820006A0 IT8820006A IT2000688A IT8820006A0 IT 8820006 A0 IT8820006 A0 IT 8820006A0 IT 8820006 A IT8820006 A IT 8820006A IT 2000688 A IT2000688 A IT 2000688A IT 8820006 A0 IT8820006 A0 IT 8820006A0
Authority
IT
Italy
Prior art keywords
junctions
lifetime
semiconductor
measuring
equipment
Prior art date
Application number
IT8820006A
Other languages
English (en)
Other versions
IT1216540B (it
Inventor
Vincenzo Russo
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT8820006A priority Critical patent/IT1216540B/it
Publication of IT8820006A0 publication Critical patent/IT8820006A0/it
Priority to DE89200716T priority patent/DE68909282T2/de
Priority to EP89200716A priority patent/EP0335444B1/en
Priority to US07/330,165 priority patent/US4956603A/en
Application granted granted Critical
Publication of IT1216540B publication Critical patent/IT1216540B/it

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2632—Circuits therefor for testing diodes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
IT8820006A 1988-03-29 1988-03-29 Metodo e apparecchiatura per la misura del tempo di vita su giunzioni p_n a semiconduttore tramite effetto fotovoltaiico. IT1216540B (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT8820006A IT1216540B (it) 1988-03-29 1988-03-29 Metodo e apparecchiatura per la misura del tempo di vita su giunzioni p_n a semiconduttore tramite effetto fotovoltaiico.
DE89200716T DE68909282T2 (de) 1988-03-29 1989-03-21 Methode und Apparat zur Lebensdauermessung in P-N-Halbleiterübergängen mittels des photovoltaischen Effektes.
EP89200716A EP0335444B1 (en) 1988-03-29 1989-03-21 Method and apparatus for measuring the lifetime on p-n semiconductor junctions by photovoltaic effect
US07/330,165 US4956603A (en) 1988-03-29 1989-03-29 Method and apparatus for measuring the lifetime on P-N semiconductor junctions by photovoltaic effect

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8820006A IT1216540B (it) 1988-03-29 1988-03-29 Metodo e apparecchiatura per la misura del tempo di vita su giunzioni p_n a semiconduttore tramite effetto fotovoltaiico.

Publications (2)

Publication Number Publication Date
IT8820006A0 true IT8820006A0 (it) 1988-03-29
IT1216540B IT1216540B (it) 1990-03-08

Family

ID=11163055

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8820006A IT1216540B (it) 1988-03-29 1988-03-29 Metodo e apparecchiatura per la misura del tempo di vita su giunzioni p_n a semiconduttore tramite effetto fotovoltaiico.

Country Status (4)

Country Link
US (1) US4956603A (it)
EP (1) EP0335444B1 (it)
DE (1) DE68909282T2 (it)
IT (1) IT1216540B (it)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5138256A (en) * 1991-04-23 1992-08-11 International Business Machines Corp. Method and apparatus for determining the thickness of an interfacial polysilicon/silicon oxide film
US5334540A (en) * 1991-11-14 1994-08-02 Mitsubishi Denki Kabushiki Kaisha OBIC observation method and apparatus therefor
US5661408A (en) 1995-03-01 1997-08-26 Qc Solutions, Inc. Real-time in-line testing of semiconductor wafers
TW341664B (en) * 1995-05-12 1998-10-01 Ibm Photovoltaic oxide charge measurement probe technique
US5594247A (en) * 1995-07-07 1997-01-14 Keithley Instruments, Inc. Apparatus and method for depositing charge on a semiconductor wafer
US5767693A (en) * 1996-09-04 1998-06-16 Smithley Instruments, Inc. Method and apparatus for measurement of mobile charges with a corona screen gun
US6060709A (en) * 1997-12-31 2000-05-09 Verkuil; Roger L. Apparatus and method for depositing uniform charge on a thin oxide semiconductor wafer
SG106579A1 (en) * 2000-04-12 2004-10-29 Jiann Min Chin Pulsed single contact optical beam induced current analysis of integrated circuits
US20020171441A1 (en) * 2001-05-17 2002-11-21 First Solar Llc Method and apparatus for accelerated life testing of a solar cell
US6911350B2 (en) * 2003-03-28 2005-06-28 Qc Solutions, Inc. Real-time in-line testing of semiconductor wafers
US7160742B2 (en) 2003-07-21 2007-01-09 Qc Solutions, Inc. Methods for integrated implant monitoring
US7119569B2 (en) * 2004-03-05 2006-10-10 Qc Solutions, Inc. Real-time in-line testing of semiconductor wafers
US7659981B2 (en) * 2005-08-26 2010-02-09 Dcg Systems, Inc. Apparatus and method for probing integrated circuits using polarization difference probing
US7450245B2 (en) 2005-06-29 2008-11-11 Dcg Systems, Inc. Method and apparatus for measuring high-bandwidth electrical signals using modulation in an optical probing system
US7733100B2 (en) 2005-08-26 2010-06-08 Dcg Systems, Inc. System and method for modulation mapping
SG10201401887YA (en) 2009-05-01 2014-06-27 Dcg Systems Inc Systems and method for laser voltage imaging state mapping

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1136017B (de) * 1959-09-24 1962-09-06 Telefunken Patent Verfahren zur Messung der elektrischen Groessen eines Halbleiterkristalls
US3745454A (en) * 1971-12-03 1973-07-10 Motorola Inc Method and means for measuring carrier lifetime in epitaxial films
US4211488A (en) * 1978-10-03 1980-07-08 Rca Corporation Optical testing of a semiconductor
US4578641A (en) * 1982-09-24 1986-03-25 Exxon Research And Engineering Co. System for measuring carrier lifetime of semiconductor wafers
JPS59141238A (ja) * 1983-02-01 1984-08-13 Hitachi Ltd キヤリア寿命測定装置
JPS61274379A (ja) * 1985-05-29 1986-12-04 Olympus Optical Co Ltd 半導体レ−ザ駆動装置

Also Published As

Publication number Publication date
EP0335444A1 (en) 1989-10-04
DE68909282T2 (de) 1994-02-17
US4956603A (en) 1990-09-11
EP0335444B1 (en) 1993-09-22
IT1216540B (it) 1990-03-08
DE68909282D1 (de) 1993-10-28

Similar Documents

Publication Publication Date Title
IT8820006A0 (it) Metodo e apparecchiatura per la misura del tempo di vita su giunzioni p_n a semiconduttore tramite effetto fotovoltaiico.
KR900008644A (ko) 반도체 장치 제조 방법
KR910007164A (ko) 반도체장치 및 그 제조방법
KR900011017A (ko) 반도체장치
KR920003832A (ko) 반도체 장치 제조 방법
KR880701023A (ko) 반도체 장치 제조 방법
KR880004552A (ko) 반도체장치 제조방법
DE3884040D1 (de) Halbleiterfehlertester.
KR890700922A (ko) 반도체 장치와 그 제조방법
DE68925374D1 (de) Halbleiterherstellungsvorrichtung
DE68927295D1 (de) Kunstharzversiegeltes halbleiterbauelement
ITMI911952A0 (it) Dispositivo semiconduttore e metodo per la sua fabbricazione
DE69030930D1 (de) Halbleiterlaservorrichtung
KR880002274A (ko) 바이폴라형 반도체장치의 제조방법
DE68928448D1 (de) Halbleitervorrichtung und Herstellungsverfahren
KR890015360A (ko) 반도체장치 및 그 제조방법
KR890004403A (ko) 반도체 장치 및 제조방법
KR900008703A (ko) 반도체 장치
DE68928312D1 (de) Leistungshalbleitervorrichtung
KR910001871A (ko) 반도체 소자 제조방법
KR900001037A (ko) 반도체 장치
KR910007151A (ko) 대전력 반도체장치
DE3886490D1 (de) Halbleitende Hochleistungsverstärker-Vorrichtung.
IT1234517B (it) Dispositivo a semiconduttore bipolare di potenza e procedimento per la sua fabbricazione
DE68928760D1 (de) Halbleitervorrichtung

Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970329