IT9048191A1 - "dispositivo di memoria a semi-coduttori con cella a condesantore impi lato e procedimento per la sua fabbricazione". - Google Patents
"dispositivo di memoria a semi-coduttori con cella a condesantore impi lato e procedimento per la sua fabbricazione".Info
- Publication number
- IT9048191A1 IT9048191A1 IT048191A IT4819190A IT9048191A1 IT 9048191 A1 IT9048191 A1 IT 9048191A1 IT 048191 A IT048191 A IT 048191A IT 4819190 A IT4819190 A IT 4819190A IT 9048191 A1 IT9048191 A1 IT 9048191A1
- Authority
- IT
- Italy
- Prior art keywords
- condesantor
- coduttor
- semi
- procedure
- manufacture
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900008069A KR920009748B1 (ko) | 1990-05-31 | 1990-05-31 | 적층형 캐패시터셀의 구조 및 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT9048191A0 IT9048191A0 (it) | 1990-07-31 |
| IT9048191A1 true IT9048191A1 (it) | 1991-12-01 |
Family
ID=19299691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT048191A IT9048191A1 (it) | 1990-05-31 | 1990-07-31 | "dispositivo di memoria a semi-coduttori con cella a condesantore impi lato e procedimento per la sua fabbricazione". |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPH0435062A (it) |
| KR (1) | KR920009748B1 (it) |
| CN (1) | CN1056946A (it) |
| DE (1) | DE4023153A1 (it) |
| GB (1) | GB2244596A (it) |
| IT (1) | IT9048191A1 (it) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3147144B2 (ja) * | 1996-04-09 | 2001-03-19 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| KR100475075B1 (ko) * | 2002-05-17 | 2005-03-10 | 삼성전자주식회사 | 반도체 메모리 소자 및 그 제조방법 |
| US7538384B2 (en) * | 2005-12-05 | 2009-05-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Non-volatile memory array structure |
| TWI679662B (zh) * | 2019-08-01 | 2019-12-11 | 力晶積成電子製造股份有限公司 | 電容集成結構及其電容與其製造方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2720533A1 (de) * | 1977-05-06 | 1978-11-09 | Siemens Ag | Monolithisch integrierte schaltungsanordnung mit ein-transistor- speicherelementen |
| JPS57120295A (en) * | 1981-01-17 | 1982-07-27 | Mitsubishi Electric Corp | Semiconductor memory device |
| JPS602782B2 (ja) * | 1982-06-30 | 1985-01-23 | 富士通株式会社 | 半導体記憶装置 |
| JPS602784B2 (ja) * | 1982-12-20 | 1985-01-23 | 富士通株式会社 | 半導体記憶装置 |
| GB2143675B (en) * | 1983-07-11 | 1987-05-07 | Nat Semiconductor Corp | High efficiency dynamic random access memory cell and process for fabricating it |
| JPH0618257B2 (ja) * | 1984-04-28 | 1994-03-09 | 富士通株式会社 | 半導体記憶装置の製造方法 |
| JPS61183952A (ja) * | 1985-02-09 | 1986-08-16 | Fujitsu Ltd | 半導体記憶装置及びその製造方法 |
| DE3856143T2 (de) * | 1987-06-17 | 1998-10-29 | Fujitsu Ltd | Verfahren zum Herstellen einer dynamischen Speicherzelle mit wahlfreiem Zugriff |
| JP2755591B2 (ja) * | 1988-03-25 | 1998-05-20 | 株式会社東芝 | 半導体記憶装置 |
| JP2682021B2 (ja) * | 1988-06-29 | 1997-11-26 | 富士通株式会社 | 半導体メモリ装置 |
| JPH0294471A (ja) * | 1988-09-30 | 1990-04-05 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
-
1990
- 1990-05-31 KR KR1019900008069A patent/KR920009748B1/ko not_active Expired
- 1990-07-20 DE DE4023153A patent/DE4023153A1/de not_active Withdrawn
- 1990-07-30 GB GB9016673A patent/GB2244596A/en not_active Withdrawn
- 1990-07-31 JP JP2201561A patent/JPH0435062A/ja active Pending
- 1990-07-31 CN CN90106622A patent/CN1056946A/zh active Pending
- 1990-07-31 IT IT048191A patent/IT9048191A1/it unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR920009748B1 (ko) | 1992-10-22 |
| CN1056946A (zh) | 1991-12-11 |
| IT9048191A0 (it) | 1990-07-31 |
| DE4023153A1 (de) | 1991-12-05 |
| JPH0435062A (ja) | 1992-02-05 |
| KR910020903A (ko) | 1991-12-20 |
| GB9016673D0 (en) | 1990-09-12 |
| GB2244596A (en) | 1991-12-04 |
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