IT941388B - Procedimento per fabbricare un componente a semiconduttor - Google Patents

Procedimento per fabbricare un componente a semiconduttor

Info

Publication number: IT941388B
Authority: IT; Italy
Prior art keywords: procedure; manufacturing; semiconductor component; semiconductor; component
Prior art date: 1970-12-01

Application number

IT31678/71A

Other languages

English (en)

Italian (it)

Original Assignee

Siemens Ag

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1970-12-01

Filing date

1971-11-26

Publication date

1973-03-01

1971-11-26 Application filed by Siemens Ag filed Critical Siemens Ag

1973-03-01 Application granted granted Critical

1973-03-01 Publication of IT941388B publication Critical patent/IT941388B/it

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

IT31678/71A 1970-12-01 1971-11-26 Procedimento per fabbricare un componente a semiconduttor IT941388B (it)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DE2059116A DE2059116C3 (de)	1970-12-01	1970-12-01	Verfahren zur Herstellung eines Halbleiterbauelementes

Publications (1)

Publication Number	Publication Date
IT941388B true IT941388B (it)	1973-03-01

Family

ID=5789659

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IT31678/71A IT941388B (it)	1970-12-01	1971-11-26	Procedimento per fabbricare un componente a semiconduttor

Country Status (7)

Country	Link
BE (1)	BE775973A (2)
DE (1)	DE2059116C3 (2)
FR (1)	FR2116424A1 (2)
GB (1)	GB1358438A (2)
IT (1)	IT941388B (2)
LU (1)	LU64363A1 (2)
NL (1)	NL7115760A (2)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2284981A1 (fr) *	1974-09-10	1976-04-09	Radiotechnique Compelec	Procede d'obtention d'un circuit integre semiconducteur
JPS5674921A (en)	1979-11-22	1981-06-20	Toshiba Corp	Manufacturing method of semiconductor and apparatus thereof
US5273616A (en) *	1980-04-10	1993-12-28	Massachusetts Institute Of Technology	Method of producing sheets of crystalline material and devices made therefrom
US4549926A (en) *	1982-01-12	1985-10-29	Rca Corporation	Method for growing monocrystalline silicon on a mask layer
IN157312B (2) *	1982-01-12	1986-03-01	Rca Corp
US4482422A (en) *	1982-02-26	1984-11-13	Rca Corporation	Method for growing a low defect monocrystalline layer on a mask
GB2142185A (en) *	1983-06-22	1985-01-09	Rca Corp	Mosfet fabrication method
US4578142A (en) *	1984-05-10	1986-03-25	Rca Corporation	Method for growing monocrystalline silicon through mask layer
US4704186A (en) *	1986-02-19	1987-11-03	Rca Corporation	Recessed oxide method for making a silicon-on-insulator substrate
EP0307108A1 (en) *	1987-08-24	1989-03-15	Canon Kabushiki Kaisha	Method of forming crystal
GB2228617A (en) *	1989-02-27	1990-08-29	Philips Electronic Associated	A method of manufacturing a semiconductor device having a mesa structure
TW205603B (2) *	1990-09-21	1993-05-11	Anelva Corp

1970
- 1970-12-01 DE DE2059116A patent/DE2059116C3/de not_active Expired
1971
- 1971-11-16 NL NL7115760A patent/NL7115760A/xx unknown
- 1971-11-26 IT IT31678/71A patent/IT941388B/it active
- 1971-11-29 BE BE775973A patent/BE775973A/xx unknown
- 1971-11-29 LU LU64363D patent/LU64363A1/xx unknown
- 1971-11-30 FR FR7142813A patent/FR2116424A1/fr not_active Withdrawn
- 1971-12-01 GB GB5585371A patent/GB1358438A/en not_active Expired

Also Published As

Publication number	Publication date
GB1358438A (en)	1974-07-03
BE775973A (fr)	1972-03-16
LU64363A1 (2)	1972-06-19
DE2059116B2 (de)	1974-04-25
DE2059116C3 (de)	1974-11-21
DE2059116A1 (de)	1972-07-06
FR2116424A1 (2)	1972-07-13
NL7115760A (2)	1972-06-05

Similar Documents

Publication	Publication Date	Title
IT955649B (it)	1973-09-29	Metodo per la fabbricazione di un dispositivo semiconduttore
IT940727B (it)	1973-02-20	Procedimento per fabbricare un generatore termoelettrico
ES196297Y (es)	1975-08-01	Un dispositivo semiconductor.
IT949770B (it)	1973-06-11	Componente semiconduttore
IT963303B (it)	1974-01-10	Laser a semiconduttore
IT969896B (it)	1974-04-10	Procedimento per fabbricare zeaxantina
IT1033295B (it)	1979-07-10	Procedimento per fabbricare un dispositivo a semiconduttori
IT941388B (it)	1973-03-01	Procedimento per fabbricare un componente a semiconduttor
IT969931B (it)	1974-04-10	Componente a semiconduttori beam lead
DE2112817B2 (de)	1973-02-08	Halbleiteranordnung
IT939041B (it)	1973-02-10	Dispositivo a semiconduttore
TR16847A (tr)	1973-07-01	Mikrogranuelatlarin yapilmasina mahsus usul
IT982341B (it)	1974-10-21	Componente a semiconduttori
TR16951A (tr)	1974-01-09	Urea istihsali icin usul
AU3308571A (en)	1973-03-08	Manufacturing a semiconductor device
CH526859A (de)	1972-08-15	Bistabiles Halbleiterbauelement
BE769520A (fr)	1971-11-16	Circuit a semi-conducteur
IT963314B (it)	1974-01-10	Metodo per la fabbricazione di un dispositivo semiconduttore
BR7203959D0 (pt)	1973-08-09	Um dispositivo semicondutor
IT1017057B (it)	1977-07-20	Componente a semiconduttori
SE383940B (sv)	1976-04-05	Forfarande for att framstella en halvledaranordning
CH528823A (de)	1972-09-30	Halbleiteranordnung
IT970856B (it)	1974-04-20	Componente a semiconduttore
IT984159B (it)	1974-11-20	Procedimento per fabbricare un componente a semiconduttor
CH516874A (de)	1971-12-15	Halbleiterbauelement