ITMI20031841A1 - Suscettore per reattori epitassiali ad induzione. - Google Patents

Suscettore per reattori epitassiali ad induzione.

Info

Publication number
ITMI20031841A1
ITMI20031841A1 ITMI20031841A ITMI20031841A1 IT MI20031841 A1 ITMI20031841 A1 IT MI20031841A1 IT MI20031841 A ITMI20031841 A IT MI20031841A IT MI20031841 A1 ITMI20031841 A1 IT MI20031841A1
Authority
IT
Italy
Prior art keywords
suscector
epitaxial reactors
induction
induction epitaxial
reactors
Prior art date
Application number
Other languages
English (en)
Inventor
Danilo Crippa
Franco Preti
Giuseppe Tarenzi
Original Assignee
Lpe Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lpe Spa filed Critical Lpe Spa
Priority to ITMI20031841 priority Critical patent/ITMI20031841A1/it
Priority to PCT/EP2004/010655 priority patent/WO2005031044A1/en
Publication of ITMI20031841A1 publication Critical patent/ITMI20031841A1/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
ITMI20031841 2003-09-25 2003-09-25 Suscettore per reattori epitassiali ad induzione. ITMI20031841A1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
ITMI20031841 ITMI20031841A1 (it) 2003-09-25 2003-09-25 Suscettore per reattori epitassiali ad induzione.
PCT/EP2004/010655 WO2005031044A1 (en) 2003-09-25 2004-09-22 Susceptor for induction-heated epitaxial reactors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITMI20031841 ITMI20031841A1 (it) 2003-09-25 2003-09-25 Suscettore per reattori epitassiali ad induzione.

Publications (1)

Publication Number Publication Date
ITMI20031841A1 true ITMI20031841A1 (it) 2005-03-26

Family

ID=34385810

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI20031841 ITMI20031841A1 (it) 2003-09-25 2003-09-25 Suscettore per reattori epitassiali ad induzione.

Country Status (2)

Country Link
IT (1) ITMI20031841A1 (it)
WO (1) WO2005031044A1 (it)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5998519A (ja) * 1982-11-27 1984-06-06 Toshiba Corp バレル型気相成長装置用サセプタ
DE3485898D1 (de) * 1983-12-09 1992-10-01 Applied Materials Inc Induktiv beheitzter reaktor zur chemischen abscheidung aus der dampfphase.
US4823736A (en) * 1985-07-22 1989-04-25 Air Products And Chemicals, Inc. Barrel structure for semiconductor epitaxial reactor
JPH0666265B2 (ja) * 1986-02-17 1994-08-24 東芝セラミツクス株式会社 半導体気相成長用サセプタ
DE3707672A1 (de) * 1987-03-10 1988-09-22 Sitesa Sa Epitaxieanlage
JPH0350185A (ja) * 1989-07-18 1991-03-04 Furukawa Electric Co Ltd:The 気相薄膜成長装置
IT1312150B1 (it) * 1999-03-25 2002-04-09 Lpe Spa Perfezionata camera di reazione per reattore epitassiale
ITMI20011881A1 (it) * 2001-09-07 2003-03-07 L P E S P A Suscettori dotato di dispositivi di controllo della crescita epitassiale e reattore epitassiale che utilizza lo stesso

Also Published As

Publication number Publication date
WO2005031044A1 (en) 2005-04-07

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