Classifications

• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
  • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
  • G11C29/50—Marginal testing, e.g. race, voltage or current testing
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C16/00—Erasable programmable read-only memories
  • G11C16/02—Erasable programmable read-only memories electrically programmable
  • G11C16/06—Auxiliary circuits, e.g. for writing into memory
  • G11C16/26—Sensing or reading circuits; Data output circuits
  • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
  • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
  • G11C29/026—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in sense amplifiers
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
  • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
  • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
  • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
  • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
  • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
  • G11C7/067—Single-ended amplifiers
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
  • G11C7/14—Dummy cell management; Sense reference voltage generators
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C16/00—Erasable programmable read-only memories
  • G11C16/02—Erasable programmable read-only memories electrically programmable
  • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
  • G11C2207/06—Sense amplifier related aspects
  • G11C2207/063—Current sense amplifiers
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
  • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
  • G11C2211/564—Miscellaneous aspects
  • G11C2211/5645—Multilevel memory with current-mirror arrangements

Priority Applications (3)

Applications Claiming Priority (1)

Publications (1)

Family

ID=35942824

Family Applications (1)

Country Status (2)

Families Citing this family (5)

Family Cites Families (6)

• 2004
  • 2004-08-26 IT IT001671A patent/ITMI20041671A1/it unknown
• 2005
  • 2005-05-09 US US11/124,939 patent/US7269058B2/en not_active Expired - Lifetime

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