ITMI20041901A1 - Sensore micromeccanico e procedimento per la fabbricazione di un sensore micromeccanico. - Google Patents
Sensore micromeccanico e procedimento per la fabbricazione di un sensore micromeccanico.Info
- Publication number
- ITMI20041901A1 ITMI20041901A1 IT001901A ITMI20041901A ITMI20041901A1 IT MI20041901 A1 ITMI20041901 A1 IT MI20041901A1 IT 001901 A IT001901 A IT 001901A IT MI20041901 A ITMI20041901 A IT MI20041901A IT MI20041901 A1 ITMI20041901 A1 IT MI20041901A1
- Authority
- IT
- Italy
- Prior art keywords
- micromechanical sensor
- procedure
- manufacture
- micromechanical
- sensor
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
- B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
- G01K7/015—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions using microstructures, e.g. made of silicon
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/147—Details about the mounting of the sensor to support or covering means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P1/00—Details of instruments
- G01P1/02—Housings
- G01P1/023—Housings for acceleration measuring devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0292—Sensors not provided for in B81B2201/0207 - B81B2201/0285
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
- B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
- B81C2203/0757—Topology for facilitating the monolithic integration
- B81C2203/0778—Topology for facilitating the monolithic integration not provided for in B81C2203/0764 - B81C2203/0771
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/879—Bump connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Analytical Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10347215A DE10347215A1 (de) | 2003-10-10 | 2003-10-10 | Mikromechanischer Sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ITMI20041901A1 true ITMI20041901A1 (it) | 2005-01-07 |
Family
ID=34353370
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT001901A ITMI20041901A1 (it) | 2003-10-10 | 2004-10-07 | Sensore micromeccanico e procedimento per la fabbricazione di un sensore micromeccanico. |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7213465B2 (it) |
| DE (1) | DE10347215A1 (it) |
| FR (1) | FR2860779B1 (it) |
| IT (1) | ITMI20041901A1 (it) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004051468A1 (de) | 2004-10-22 | 2006-04-27 | Robert Bosch Gmbh | Verfahren zum Montieren von Halbleiterchips und entsprechende Halbleiterchipanordnung |
| US8443676B2 (en) | 2005-08-23 | 2013-05-21 | Continental Teves Ag & Co. Ohg | Pressure sensor for hydraulic media in motor vehicle brake systems |
| DE102005053682A1 (de) * | 2005-11-10 | 2007-05-16 | Bosch Gmbh Robert | Sensor, Sensorbauelement und Verfahren zur Herstellung eines Sensors |
| DE102007008518A1 (de) * | 2007-02-21 | 2008-08-28 | Infineon Technologies Ag | Modul mit einem ein bewegliches Element umfassenden Halbleiterchip |
| US7557417B2 (en) | 2007-02-21 | 2009-07-07 | Infineon Technologies Ag | Module comprising a semiconductor chip comprising a movable element |
| US20100081956A1 (en) * | 2008-09-30 | 2010-04-01 | Searete Llc, A Limited Liability Corporation Of The State Of Delaware | Method, composition, and system to control pH in pulmonary tissue of a subject |
| DE102008044177A1 (de) | 2008-11-28 | 2010-06-02 | Robert Bosch Gmbh | Verfahren zur Herstellung eines mikromechanischen Bauelements sowie mit dem Verfahren hergestelltes Bauelement bzw. dessen Verwendung |
| US9021887B2 (en) * | 2011-12-19 | 2015-05-05 | Infineon Technologies Ag | Micromechanical semiconductor sensing device |
| DE102012203135B4 (de) | 2012-02-29 | 2020-11-12 | Robert Bosch Gmbh | Mikromechanische Sensoranordnung und ein entsprechendes Herstellungsverfahren sowie entsprechende Verwendung |
| DE102012224424A1 (de) * | 2012-12-27 | 2014-07-17 | Robert Bosch Gmbh | Sensorsystem und Abdeckvorrichtung für ein Sensorsystem |
| US11302611B2 (en) * | 2018-11-28 | 2022-04-12 | Texas Instruments Incorporated | Semiconductor package with top circuit and an IC with a gap over the IC |
| DE102020122871B4 (de) * | 2020-09-01 | 2023-12-07 | Infineon Technologies Ag | Halbleiter-Die mit Sensorabschnitt am Rand und Sensor mit diesem Halbleiter-Die |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6624505B2 (en) * | 1998-02-06 | 2003-09-23 | Shellcase, Ltd. | Packaged integrated circuits and methods of producing thereof |
| DE19847455A1 (de) | 1998-10-15 | 2000-04-27 | Bosch Gmbh Robert | Verfahren zur Bearbeitung von Silizium mittels Ätzprozessen |
| DE10040537B4 (de) * | 2000-08-18 | 2004-05-13 | Eads Deutschland Gmbh | Mikromechanischer Drehratensensor und Verfahren zu seiner Herstellung |
| DE10042945A1 (de) | 2000-08-31 | 2002-03-28 | Siemens Ag | Bauelement für Sensoren mit integrierter Elektronik und Verfahren zu seiner Herstellung, sowie Sensor mit integrierter Elektronik |
| DE10104868A1 (de) | 2001-02-03 | 2002-08-22 | Bosch Gmbh Robert | Mikromechanisches Bauelement sowie ein Verfahren zur Herstellung eines mikromechanischen Bauelements |
| DE10114036A1 (de) | 2001-03-22 | 2002-10-02 | Bosch Gmbh Robert | Verfahren zur Herstellung von mikromechanischen Sensoren und damit hergestellte Sensoren |
| US6635506B2 (en) | 2001-11-07 | 2003-10-21 | International Business Machines Corporation | Method of fabricating micro-electromechanical switches on CMOS compatible substrates |
-
2003
- 2003-10-10 DE DE10347215A patent/DE10347215A1/de not_active Ceased
-
2004
- 2004-10-04 US US10/958,014 patent/US7213465B2/en not_active Expired - Fee Related
- 2004-10-07 FR FR0452287A patent/FR2860779B1/fr not_active Expired - Fee Related
- 2004-10-07 IT IT001901A patent/ITMI20041901A1/it unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2860779A1 (fr) | 2005-04-15 |
| US7213465B2 (en) | 2007-05-08 |
| FR2860779B1 (fr) | 2007-09-21 |
| DE10347215A1 (de) | 2005-05-12 |
| US20050115321A1 (en) | 2005-06-02 |
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