ITMI912251A0 - Procedimento per precaricare linee di ingresso/uscita d un dispositivo di memoria - Google Patents

Procedimento per precaricare linee di ingresso/uscita d un dispositivo di memoria

Info

Publication number
ITMI912251A0
ITMI912251A0 IT91MI2251A ITMI912251A ITMI912251A0 IT MI912251 A0 ITMI912251 A0 IT MI912251A0 IT 91MI2251 A IT91MI2251 A IT 91MI2251A IT MI912251 A ITMI912251 A IT MI912251A IT MI912251 A0 ITMI912251 A0 IT MI912251A0
Authority
IT
Italy
Prior art keywords
procedure
memory device
output lines
preloading
input
Prior art date
Application number
IT91MI2251A
Other languages
English (en)
Inventor
Je-Hwan Yu
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITMI912251A0 publication Critical patent/ITMI912251A0/it
Publication of ITMI912251A1 publication Critical patent/ITMI912251A1/it
Application granted granted Critical
Publication of IT1251009B publication Critical patent/IT1251009B/it

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1048Data bus control circuits, e.g. precharging, presetting, equalising
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
ITMI912251A 1991-05-24 1991-08-13 Procedimento per precaricare linee di ingresso/uscita di un dispositivo di memoria IT1251009B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910008456A KR940001644B1 (ko) 1991-05-24 1991-05-24 메모리 장치의 입출력 라인 프리차아지 방법

Publications (3)

Publication Number Publication Date
ITMI912251A0 true ITMI912251A0 (it) 1991-08-13
ITMI912251A1 ITMI912251A1 (it) 1993-02-13
IT1251009B IT1251009B (it) 1995-04-28

Family

ID=19314874

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI912251A IT1251009B (it) 1991-05-24 1991-08-13 Procedimento per precaricare linee di ingresso/uscita di un dispositivo di memoria

Country Status (7)

Country Link
US (1) US5262995A (it)
JP (1) JP2601583B2 (it)
KR (1) KR940001644B1 (it)
DE (1) DE4124895C2 (it)
FR (1) FR2676854B1 (it)
GB (1) GB2256071B (it)
IT (1) IT1251009B (it)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950009234B1 (ko) * 1992-02-19 1995-08-18 삼성전자주식회사 반도체 메모리장치의 비트라인 분리클럭 발생장치
KR960006271B1 (ko) * 1993-08-14 1996-05-13 삼성전자주식회사 고속동작을 위한 입출력라인구동방식을 가지는 반도체메모리장치
US5402379A (en) * 1993-08-31 1995-03-28 Sgs-Thomson Microelectronics, Inc. Precharge device for an integrated circuit internal bus
US5706237A (en) * 1996-10-08 1998-01-06 International Business Machines Corporation Self-restore circuit with soft error protection for dynamic logic circuits
TW419669B (en) * 1998-03-16 2001-01-21 Nippon Electric Co Semiconductor memory device
GB2338808B (en) 1998-06-23 2002-02-27 Mitel Semiconductor Ltd Semiconductor memories
US6141275A (en) * 1999-04-06 2000-10-31 Genesis Semiconductor Method of and apparatus for precharging and equalizing local input/output signal lines within a memory circuit
JP3447640B2 (ja) 1999-12-28 2003-09-16 日本電気株式会社 半導体記憶装置
KR100564569B1 (ko) * 2003-06-09 2006-03-28 삼성전자주식회사 셀 누설 전류에 강한 프리차지 제어 회로를 갖는 메모리장치 및 비트라인 프리차아지 방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61110394A (ja) * 1984-10-31 1986-05-28 Mitsubishi Electric Corp 半導体記憶装置
US4751680A (en) * 1986-03-03 1988-06-14 Motorola, Inc. Bit line equalization in a memory
KR890003488B1 (ko) * 1986-06-30 1989-09-22 삼성전자 주식회사 데이터 전송회로
JPS6376193A (ja) * 1986-09-19 1988-04-06 Fujitsu Ltd 半導体記憶装置
JPH07105137B2 (ja) * 1987-11-17 1995-11-13 日本電気株式会社 半導体メモリ
US4802129A (en) * 1987-12-03 1989-01-31 Motorola, Inc. RAM with dual precharge circuit and write recovery circuitry
JPH02146180A (ja) * 1988-11-28 1990-06-05 Nec Corp 半導体メモリ装置
DE69019551T2 (de) * 1989-02-18 1995-09-21 Sony Corp Speicheranordnungen.
JPH0814989B2 (ja) * 1989-05-09 1996-02-14 日本電気株式会社 内部同期型スタティックram
US5043945A (en) * 1989-09-05 1991-08-27 Motorola, Inc. Memory with improved bit line and write data line equalization
JP2607697B2 (ja) * 1989-09-20 1997-05-07 株式会社日立製作所 エレベータの制御装置
JP2825291B2 (ja) * 1989-11-13 1998-11-18 株式会社東芝 半導体記憶装置
JP2534786B2 (ja) * 1989-11-27 1996-09-18 株式会社東芝 半導体集積回路
US5036492A (en) * 1990-02-15 1991-07-30 Advanced Micro Devices, Inc. CMOS precharge and equalization circuit
JP2781080B2 (ja) * 1991-04-09 1998-07-30 三菱電機株式会社 ランダムアクセスメモリ

Also Published As

Publication number Publication date
ITMI912251A1 (it) 1993-02-13
DE4124895A1 (de) 1992-11-26
IT1251009B (it) 1995-04-28
JPH04349296A (ja) 1992-12-03
DE4124895C2 (de) 1995-01-19
KR920022306A (ko) 1992-12-19
US5262995A (en) 1993-11-16
GB2256071A (en) 1992-11-25
FR2676854B1 (fr) 1997-05-16
GB2256071B (en) 1995-08-02
GB9117858D0 (en) 1991-10-09
FR2676854A1 (fr) 1992-11-27
KR940001644B1 (ko) 1994-02-28
JP2601583B2 (ja) 1997-04-16

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970826