ITMI932035A1 - Procedimento per la preparazione di moduli fotovoltaici a base di silicio cristallino - Google Patents

Procedimento per la preparazione di moduli fotovoltaici a base di silicio cristallino

Info

Publication number
ITMI932035A1
ITMI932035A1 IT93MI002035A ITMI932035A ITMI932035A1 IT MI932035 A1 ITMI932035 A1 IT MI932035A1 IT 93MI002035 A IT93MI002035 A IT 93MI002035A IT MI932035 A ITMI932035 A IT MI932035A IT MI932035 A1 ITMI932035 A1 IT MI932035A1
Authority
IT
Italy
Prior art keywords
crystalline silicon
photovoltaic modules
procedure
preparation
modules based
Prior art date
Application number
IT93MI002035A
Other languages
English (en)
Inventor
Daniele Margadonna
Walter Pasqua
Mariano Zarcone
Original Assignee
Eurosolare Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eurosolare Spa filed Critical Eurosolare Spa
Publication of ITMI932035A0 publication Critical patent/ITMI932035A0/it
Priority to ITMI932035A priority Critical patent/IT1272665B/it
Priority to EP94202682A priority patent/EP0645828B1/en
Priority to DE69430286T priority patent/DE69430286T2/de
Priority to ES94202682T priority patent/ES2173904T3/es
Priority to AT94202682T priority patent/ATE215737T1/de
Priority to AU74113/94A priority patent/AU673622B2/en
Priority to US08/309,087 priority patent/US5504015A/en
Priority to JP25444194A priority patent/JP3817656B2/ja
Publication of ITMI932035A1 publication Critical patent/ITMI932035A1/it
Application granted granted Critical
Publication of IT1272665B publication Critical patent/IT1272665B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/137—Batch treatment of the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H10F19/904—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells characterised by the shapes of the structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H10F19/906—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells characterised by the materials of the structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Fish Paste Products (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
  • Medicines Containing Material From Animals Or Micro-Organisms (AREA)

Abstract

Processo per la realizzazione di moduli fotovoltaici a basso costo a base di silicio cristallino caratterizzato dal fatto che il semiconduttore viene trattato supportato su un substrato avente proprietà compatibili con il procedimento.
ITMI932035A 1993-09-23 1993-09-23 Procedimento per la preparazione di moduli fotovoltaici a base di silicio cristallino IT1272665B (it)

Priority Applications (8)

Application Number Priority Date Filing Date Title
ITMI932035A IT1272665B (it) 1993-09-23 1993-09-23 Procedimento per la preparazione di moduli fotovoltaici a base di silicio cristallino
AT94202682T ATE215737T1 (de) 1993-09-23 1994-09-17 Verfahren zur herstellung von photovoltaischen modulen aus kristallinem silizium
DE69430286T DE69430286T2 (de) 1993-09-23 1994-09-17 Verfahren zur Herstellung von photovoltaischen Modulen aus kristallinem Silizium
ES94202682T ES2173904T3 (es) 1993-09-23 1994-09-17 Procedimiento para la preparacion de modulos fotovoltaicos basados en silicio cristalino.
EP94202682A EP0645828B1 (en) 1993-09-23 1994-09-17 Process for preparing photovoltaic modules based on crystalline silicon
AU74113/94A AU673622B2 (en) 1993-09-23 1994-09-20 Process for preparing photovaltaic modules based on crystalline sylicon
US08/309,087 US5504015A (en) 1993-09-23 1994-09-20 Process for preparing photovoltaic modules based on crystalline silicon
JP25444194A JP3817656B2 (ja) 1993-09-23 1994-09-22 光起電モジュールの製法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITMI932035A IT1272665B (it) 1993-09-23 1993-09-23 Procedimento per la preparazione di moduli fotovoltaici a base di silicio cristallino

Publications (3)

Publication Number Publication Date
ITMI932035A0 ITMI932035A0 (it) 1993-09-23
ITMI932035A1 true ITMI932035A1 (it) 1995-03-23
IT1272665B IT1272665B (it) 1997-06-26

Family

ID=11366934

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI932035A IT1272665B (it) 1993-09-23 1993-09-23 Procedimento per la preparazione di moduli fotovoltaici a base di silicio cristallino

Country Status (8)

Country Link
US (1) US5504015A (it)
EP (1) EP0645828B1 (it)
JP (1) JP3817656B2 (it)
AT (1) ATE215737T1 (it)
AU (1) AU673622B2 (it)
DE (1) DE69430286T2 (it)
ES (1) ES2173904T3 (it)
IT (1) IT1272665B (it)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19903798A1 (de) * 1999-02-01 2000-08-10 Angew Solarenergie Ase Gmbh Verfahren und Anordnung zur Wärmebehandlung von flächigen Gegenständen
FR2802340B1 (fr) 1999-12-13 2003-09-05 Commissariat Energie Atomique Structure comportant des cellules photovoltaiques et procede de realisation
US20080152835A1 (en) * 2006-12-05 2008-06-26 Nano Terra Inc. Method for Patterning a Surface
US8608972B2 (en) 2006-12-05 2013-12-17 Nano Terra Inc. Method for patterning a surface
DE102008046328A1 (de) * 2008-08-29 2010-03-04 Schmid Technology Systems Gmbh Träger für Solarzellen und Verfahren zur Bearbeitung von Solarzellen
US20110100412A1 (en) * 2009-10-30 2011-05-05 International Business Machines Corporation Method of manufacturing photovoltaic modules
JP2016036034A (ja) * 2015-09-28 2016-03-17 日立化成株式会社 ｎ型拡散層の製造方法、及び太陽電池素子の製造方法
JP2016027665A (ja) * 2015-09-28 2016-02-18 日立化成株式会社 ｐ型拡散層の製造方法、及び太陽電池素子の製造方法
US20230264294A1 (en) * 2022-02-23 2023-08-24 Corning Incorporated Methods of preparing a workpiece for laser bonding

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4062102A (en) * 1975-12-31 1977-12-13 Silicon Material, Inc. Process for manufacturing a solar cell from a reject semiconductor wafer
US4270263A (en) * 1977-02-14 1981-06-02 Texas Instruments Incorporated Glass support light energy converter
DE2732933C2 (de) * 1977-07-21 1984-11-15 Bloss, Werner H., Prof. Dr.-Ing., 7065 Winterbach Verfahren zum Herstellen von Dünnschicht-Solarzellen mit pn-Heteroübergang
US4234351A (en) * 1978-07-14 1980-11-18 The Boeing Company Process for fabricating glass-encapsulated solar cell arrays and the product produced thereby
US4184903A (en) * 1978-07-26 1980-01-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of fabricating a photovoltaic module of a substantially transparent construction
FR2481522A1 (fr) * 1980-04-29 1981-10-30 Comp Generale Electricite Procede de fabrication de modules de cellules solaires
FR2484709A1 (fr) * 1980-06-16 1981-12-18 Radiotechnique Compelec Perfectionnement a la realisation d'une cellule solaire en vue de neutraliser les risques de mauvais isolement a l'endroit des bords
US4806495A (en) * 1984-09-04 1989-02-21 Texas Instruments Incorporated Method of making solar array with aluminum foil matrix
US5028546A (en) * 1989-07-31 1991-07-02 Texas Instruments Incorporated Method for manufacture of solar cell with foil contact point

Also Published As

Publication number Publication date
AU7411394A (en) 1995-04-06
JPH07169987A (ja) 1995-07-04
DE69430286T2 (de) 2002-11-28
EP0645828B1 (en) 2002-04-03
US5504015A (en) 1996-04-02
DE69430286D1 (de) 2002-05-08
IT1272665B (it) 1997-06-26
JP3817656B2 (ja) 2006-09-06
ITMI932035A0 (it) 1993-09-23
ES2173904T3 (es) 2002-11-01
AU673622B2 (en) 1996-11-14
ATE215737T1 (de) 2002-04-15
EP0645828A1 (en) 1995-03-29

Similar Documents

Publication Publication Date Title
MY114349A (en) Etching solution for etching porous silicon, etching method using the etching solution and method of prepa- ring semiconductor member using the etching solution
DE50015975D1 (de) Verfahren zur Rauhätzung von Siliziumsolarzellen
DE3767362D1 (de) Wafer-traeger fuer halbleiterbauteilerzeugung.
EP0452921A3 (en) Formation of titanium nitride on semiconductor wafer by reaction of titanium with nitrogen-bearing gas in an integrated processing system
TW350143B (en) Method for producing semiconductor device
TWI265144B (en) Silicon plate, producing method thereof, and solar cell
ATE176553T1 (de) Puffer-struktur zwischen siliziumkarbid und galliumnitrid und sich daraus ergebende halbleiteranordnungen
EP0327316A3 (en) Semiconductor device having composite substrate formed by fixing two semiconductor substrates in close contact with each other
TW326574B (en) Semiconductor apparatus and process thereof
EP0667637A3 (en) Semiconductor single crystalline substrate and method for production thereof.
ITMI932035A1 (it) Procedimento per la preparazione di moduli fotovoltaici a base di silicio cristallino
EP0292972A3 (en) Ic with recombination layer and guard ring separating vdmos and cmos or the like
EP0559986A3 (en) Method for producing semiconductor wafer and substrate used for producing the semiconductor
AU6455086A (en) High-oxygen-content silicon monocrystal substrate for semiconductor devices and production method therefor
DE3789393D1 (de) Herstellungsverfahren von Halbleiter-Scheiben.
ATE457528T1 (de) Herstellungsverfahren für grossflächige siliziumkarbid-bauelemente
CA2295248A1 (en) Power devices in wide bandgap semiconductor
TW333707B (en) The method of forming power semiconductor device with controllable integrated buffer
ATE299294T1 (de) Vorrichtung zur aufnahme von substraten
ATE144350T1 (de) Halbleiteranordnung mit einer dielektrischen schicht
ES1001809U (es) Dispositivo de arriostramiento regulable para el apoyo de elementos planos sobre un sustrato
WO2001046996A3 (de) Substrathalter
ATE307390T1 (de) Verfahren zur herstellung von leistungshalbleiterbauelementen
DE3783385D1 (de) Leistungshalbleitermodul.
BR8905540A (pt) Dispositivo semicondutor que possui transistores verticais bipolares complementares e processo de fabricacao do mesmo

Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970917