ATE457528T1 - Herstellungsverfahren für grossflächige siliziumkarbid-bauelemente - Google Patents

Herstellungsverfahren für grossflächige siliziumkarbid-bauelemente

Info

Publication number
ATE457528T1
ATE457528T1 AT02763708T AT02763708T ATE457528T1 AT E457528 T1 ATE457528 T1 AT E457528T1 AT 02763708 T AT02763708 T AT 02763708T AT 02763708 T AT02763708 T AT 02763708T AT E457528 T1 ATE457528 T1 AT E457528T1
Authority
AT
Austria
Prior art keywords
silicon carbide
thyristors
production process
area silicon
carbide components
Prior art date
Application number
AT02763708T
Other languages
English (en)
Inventor
Anant Agarwal
Sei-Hyung Ryu
John Palmour
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ATE457528T1 publication Critical patent/ATE457528T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Ceramic Products (AREA)
  • Carbon And Carbon Compounds (AREA)
AT02763708T 2001-09-12 2002-09-10 Herstellungsverfahren für grossflächige siliziumkarbid-bauelemente ATE457528T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/952,064 US6770911B2 (en) 2001-09-12 2001-09-12 Large area silicon carbide devices
PCT/US2002/030300 WO2003023870A1 (en) 2001-09-12 2002-09-10 Large area silicon carbide devices and manufacturing methods therefor

Publications (1)

Publication Number Publication Date
ATE457528T1 true ATE457528T1 (de) 2010-02-15

Family

ID=25492546

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02763708T ATE457528T1 (de) 2001-09-12 2002-09-10 Herstellungsverfahren für grossflächige siliziumkarbid-bauelemente

Country Status (9)

Country Link
US (2) US6770911B2 (de)
EP (1) EP1428268B1 (de)
JP (1) JP4644828B2 (de)
KR (1) KR20040033300A (de)
CN (1) CN1586014A (de)
AT (1) ATE457528T1 (de)
CA (1) CA2459336A1 (de)
DE (1) DE60235312D1 (de)
WO (1) WO2003023870A1 (de)

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US7391057B2 (en) * 2005-05-18 2008-06-24 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US7615801B2 (en) * 2005-05-18 2009-11-10 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US7582917B2 (en) * 2006-03-10 2009-09-01 Bae Systems Information And Electronic Systems Integration Inc. Monolithically integrated light-activated thyristor and method
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US8816715B2 (en) * 2011-05-12 2014-08-26 Nanya Technology Corp. MOS test structure, method for forming MOS test structure and method for performing wafer acceptance test
US9171977B2 (en) * 2011-06-17 2015-10-27 Cree, Inc. Optically assist-triggered wide bandgap thyristors having positive temperature coefficients
US9633998B2 (en) * 2012-09-13 2017-04-25 General Electric Company Semiconductor device and method for making the same
CN103579016B (zh) * 2013-11-04 2017-06-23 株洲南车时代电气股份有限公司 一种大电流碳化硅sbd/jbs功率芯片结构及其制造方法
CN108878523B (zh) * 2018-07-11 2021-06-15 北京优捷敏半导体技术有限公司 一种碳化硅门极可关断晶闸管及其制造方法
TWI822438B (zh) * 2022-11-02 2023-11-11 台亞半導體股份有限公司 碳化矽檢光閘流體與製造方法

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Also Published As

Publication number Publication date
CA2459336A1 (en) 2003-03-20
KR20040033300A (ko) 2004-04-21
JP2005503024A (ja) 2005-01-27
US6770911B2 (en) 2004-08-03
JP4644828B2 (ja) 2011-03-09
US7135359B2 (en) 2006-11-14
DE60235312D1 (de) 2010-03-25
CN1586014A (zh) 2005-02-23
WO2003023870A1 (en) 2003-03-20
EP1428268A1 (de) 2004-06-16
US20040206976A1 (en) 2004-10-21
US20030047748A1 (en) 2003-03-13
EP1428268B1 (de) 2010-02-10

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