ITTO20021035A1 - Dispositivo di memoria non volatile a lettura e scrittura simulante. - Google Patents

Dispositivo di memoria non volatile a lettura e scrittura simulante.

Info

Publication number
ITTO20021035A1
ITTO20021035A1 IT001035A ITTO20021035A ITTO20021035A1 IT TO20021035 A1 ITTO20021035 A1 IT TO20021035A1 IT 001035 A IT001035 A IT 001035A IT TO20021035 A ITTO20021035 A IT TO20021035A IT TO20021035 A1 ITTO20021035 A1 IT TO20021035A1
Authority
IT
Italy
Prior art keywords
reading
memory device
volatile memory
non volatile
simulating writing
Prior art date
Application number
IT001035A
Other languages
English (en)
Inventor
Andrea Bellini
Carlo Lisi
Alessandro Magnavacca
Mauro Sali
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT001035A priority Critical patent/ITTO20021035A1/it
Priority to US10/719,650 priority patent/US6950337B2/en
Priority to EP03104345A priority patent/EP1424699A3/en
Publication of ITTO20021035A1 publication Critical patent/ITTO20021035A1/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/22—Nonvolatile memory in which reading can be carried out from one memory bank or array whilst a word or sector in another bank or array is being erased or programmed simultaneously
IT001035A 2002-11-29 2002-11-29 Dispositivo di memoria non volatile a lettura e scrittura simulante. ITTO20021035A1 (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IT001035A ITTO20021035A1 (it) 2002-11-29 2002-11-29 Dispositivo di memoria non volatile a lettura e scrittura simulante.
US10/719,650 US6950337B2 (en) 2002-11-29 2003-11-21 Nonvolatile memory device with simultaneous read/write
EP03104345A EP1424699A3 (en) 2002-11-29 2003-11-24 Nonvolatile memory device with simultaneous read/write

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT001035A ITTO20021035A1 (it) 2002-11-29 2002-11-29 Dispositivo di memoria non volatile a lettura e scrittura simulante.

Publications (1)

Publication Number Publication Date
ITTO20021035A1 true ITTO20021035A1 (it) 2004-05-30

Family

ID=32259986

Family Applications (1)

Application Number Title Priority Date Filing Date
IT001035A ITTO20021035A1 (it) 2002-11-29 2002-11-29 Dispositivo di memoria non volatile a lettura e scrittura simulante.

Country Status (3)

Country Link
US (1) US6950337B2 (it)
EP (1) EP1424699A3 (it)
IT (1) ITTO20021035A1 (it)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8948263B2 (en) * 2004-02-03 2015-02-03 Broadcom Corporation Read/write separation in video request manager
US7539062B2 (en) 2006-12-20 2009-05-26 Micron Technology, Inc. Interleaved memory program and verify method, device and system
KR100856828B1 (ko) * 2007-04-23 2008-09-05 경희대학교 산학협력단 리드 액세스와 라이트 액세스를 동시에 수행하는 메모리장치
CN102045478B (zh) * 2009-10-23 2013-05-01 精工爱普生株式会社 图像读取装置、校正处理方法及用该装置的图像处理方法
EP3295310A4 (en) * 2015-05-14 2018-12-26 Adesto Technologies Corporation Concurrent read and reconfigured write operations in a memory device
US9627016B2 (en) 2015-09-10 2017-04-18 Cypress Semiconductor Corporation Systems, methods, and devices for parallel read and write operations
US10719237B2 (en) 2016-01-11 2020-07-21 Micron Technology, Inc. Apparatuses and methods for concurrently accessing multiple partitions of a non-volatile memory
US10254967B2 (en) 2016-01-13 2019-04-09 Sandisk Technologies Llc Data path control for non-volatile memory
US10528286B2 (en) 2016-11-11 2020-01-07 Sandisk Technologies Llc Interface for non-volatile memory
US10528267B2 (en) 2016-11-11 2020-01-07 Sandisk Technologies Llc Command queue for storage operations
US10528255B2 (en) 2016-11-11 2020-01-07 Sandisk Technologies Llc Interface for non-volatile memory
US10114589B2 (en) * 2016-11-16 2018-10-30 Sandisk Technologies Llc Command control for multi-core non-volatile memory
DE102021107045B4 (de) 2021-03-10 2024-11-21 Elmos Semiconductor Se Rechnersystem für eine Motorsteuerung mit einem Programmspeicher und einem Datenspeicher

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63184987A (ja) * 1987-01-28 1988-07-30 Nec Corp 半導体記憶装置
EP0745995B1 (en) 1995-05-05 2001-04-11 STMicroelectronics S.r.l. Nonvolatile, in particular flash-EEPROM, memory device
US5847998A (en) * 1996-12-20 1998-12-08 Advanced Micro Devices, Inc. Non-volatile memory array that enables simultaneous read and write operations
KR100245276B1 (ko) * 1997-03-15 2000-02-15 윤종용 버스트 모드 성능을 갖는 랜덤 억세스 메모리 장치 및 그의 동작 방법
US5847994A (en) * 1997-09-08 1998-12-08 Mitsubishi Denki Kabushiki Kaisha Non-volatile semiconductor memory device having a back ground operation mode
US5894437A (en) * 1998-01-23 1999-04-13 Hyundai Elecronics America, Inc. Concurrent read/write architecture for a flash memory
US6016270A (en) * 1998-03-06 2000-01-18 Alliance Semiconductor Corporation Flash memory architecture that utilizes a time-shared address bus scheme and separate memory cell access paths for simultaneous read/write operations
US6331950B1 (en) * 1999-10-19 2001-12-18 Fujitsu Limited Write protect input implementation for a simultaneous operation flash memory device
US6480417B2 (en) * 2001-03-15 2002-11-12 Intel Corporation Global/local memory decode with independent program and read paths and shared local decode

Also Published As

Publication number Publication date
EP1424699A3 (en) 2005-08-03
US6950337B2 (en) 2005-09-27
EP1424699A2 (en) 2004-06-02
US20040156235A1 (en) 2004-08-12

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