ITTO20030121A1 - Amplificatore di lettura di celle di memoria non volatili a - Google Patents

Amplificatore di lettura di celle di memoria non volatili a

Info

Publication number
ITTO20030121A1
ITTO20030121A1 IT000121A ITTO20030121A ITTO20030121A1 IT TO20030121 A1 ITTO20030121 A1 IT TO20030121A1 IT 000121 A IT000121 A IT 000121A IT TO20030121 A ITTO20030121 A IT TO20030121A IT TO20030121 A1 ITTO20030121 A1 IT TO20030121A1
Authority
IT
Italy
Prior art keywords
memory cell
volatile memory
non volatile
cell reading
reading amplifier
Prior art date
Application number
IT000121A
Other languages
English (en)
Inventor
Sandre Guido De
David Iezzi
Marco Pasotti
Marco Poles
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT000121A priority Critical patent/ITTO20030121A1/it
Priority to US10/777,457 priority patent/US7508716B2/en
Publication of ITTO20030121A1 publication Critical patent/ITTO20030121A1/it
Priority to US12/368,271 priority patent/US7885116B2/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators
IT000121A 2003-02-18 2003-02-18 Amplificatore di lettura di celle di memoria non volatili a ITTO20030121A1 (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IT000121A ITTO20030121A1 (it) 2003-02-18 2003-02-18 Amplificatore di lettura di celle di memoria non volatili a
US10/777,457 US7508716B2 (en) 2003-02-18 2004-02-12 Sense amplifier for low-supply-voltage nonvolatile memory cells
US12/368,271 US7885116B2 (en) 2003-02-18 2009-02-09 Sense amplifier for low-supply-voltage nonvolatile memory cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT000121A ITTO20030121A1 (it) 2003-02-18 2003-02-18 Amplificatore di lettura di celle di memoria non volatili a

Publications (1)

Publication Number Publication Date
ITTO20030121A1 true ITTO20030121A1 (it) 2004-08-19

Family

ID=33398075

Family Applications (1)

Application Number Title Priority Date Filing Date
IT000121A ITTO20030121A1 (it) 2003-02-18 2003-02-18 Amplificatore di lettura di celle di memoria non volatili a

Country Status (2)

Country Link
US (2) US7508716B2 (it)
IT (1) ITTO20030121A1 (it)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE602004003465D1 (de) * 2004-02-19 2007-01-11 St Microelectronics Sa Abfühlschaltung mit regulierter Referenzspannung
JP4810943B2 (ja) * 2005-09-21 2011-11-09 富士電機株式会社 過電流検出回路及び電圧比較回路
ITMI20060350A1 (it) * 2006-02-28 2007-09-01 St Microelectronics Srl Amplificatore di lettura con ridotta occupazione d'area per memorie a semiconduttore
ITMI20062211A1 (it) * 2006-11-17 2008-05-18 St Microelectronics Srl Circuito e metodo per generare una tensione di riferimento in dispositivi di memoria a matrice di celle non volatili
US7532516B2 (en) * 2007-04-05 2009-05-12 Sandisk Corporation Non-volatile storage with current sensing of negative threshold voltages
US8068367B2 (en) * 2007-06-15 2011-11-29 Micron Technology, Inc. Reference current sources
US8335101B2 (en) * 2010-01-21 2012-12-18 Qualcomm Incorporated Resistance-based memory with reduced voltage input/output device
US8654600B1 (en) 2011-03-01 2014-02-18 Lattice Semiconductor Corporation Low-voltage current sense amplifier
US8497710B2 (en) * 2011-05-16 2013-07-30 National Tsing Hua University Low-offset current-sense amplifier and operating method thereof
KR20130090642A (ko) * 2012-02-06 2013-08-14 삼성전자주식회사 불휘발성 반도체 메모리 장치의 센스앰프 회로
CN103794252B (zh) 2012-10-29 2018-01-09 硅存储技术公司 用于读出放大器的低电压电流参考产生器
ITMI20131060A1 (it) 2013-06-26 2014-12-27 St Microelectronics Srl Dispositivo di memoria non-volatile con circuito di lettura migliorato

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4648074A (en) * 1984-06-29 1987-03-03 Rca Corporation Reference circuit with semiconductor memory array
JP2800740B2 (ja) * 1995-09-28 1998-09-21 日本電気株式会社 半導体記憶装置
KR0172378B1 (ko) * 1995-12-30 1999-03-30 김광호 불휘발성 반도체 메모리소자
FR2753829B1 (fr) * 1996-09-24 1998-11-13 Circuit de lecture pour memoire non volatile fonctionnant avec une basse tension d'alimentation
IT1293644B1 (it) * 1997-07-25 1999-03-08 Sgs Thomson Microelectronics Circuito e metodo di lettura di celle di una matrice di memoria analogica, in particolare di tipo flash
IT1295910B1 (it) * 1997-10-31 1999-05-28 Sgs Thomson Microelectronics Circuito di lettura per memorie non volatili
KR100300549B1 (ko) * 1999-06-16 2001-11-01 김영환 비휘발성 메모리 센싱장치 및 방법
IT1314042B1 (it) * 1999-10-11 2002-12-03 St Microelectronics Srl Circuito amplificatore di lettura per memorie, ad elevata capacita'di discriminazione di livelli di corrente.
JP4212760B2 (ja) * 2000-06-02 2009-01-21 富士通マイクロエレクトロニクス株式会社 半導体記憶装置
US6535428B2 (en) * 2001-06-14 2003-03-18 Stmicroelectronics S.R.L. Sensing circuit for memory cells
US6621729B1 (en) * 2002-06-28 2003-09-16 Motorola, Inc. Sense amplifier incorporating a symmetric midpoint reference

Also Published As

Publication number Publication date
US20040228162A1 (en) 2004-11-18
US7508716B2 (en) 2009-03-24
US20090154249A1 (en) 2009-06-18
US7885116B2 (en) 2011-02-08

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