ITTO20060785A1 - Dispositivo mos resistente alla radiazione ionizzante - Google Patents
Dispositivo mos resistente alla radiazione ionizzanteInfo
- Publication number
- ITTO20060785A1 ITTO20060785A1 IT000785A ITTO20060785A ITTO20060785A1 IT TO20060785 A1 ITTO20060785 A1 IT TO20060785A1 IT 000785 A IT000785 A IT 000785A IT TO20060785 A ITTO20060785 A IT TO20060785A IT TO20060785 A1 ITTO20060785 A1 IT TO20060785A1
- Authority
- IT
- Italy
- Prior art keywords
- ionizing radiation
- mos device
- device resistant
- resistant
- mos
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
- H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
- H10D62/156—Drain regions of DMOS transistors
- H10D62/157—Impurity concentrations or distributions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
- H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT000785A ITTO20060785A1 (it) | 2006-11-02 | 2006-11-02 | Dispositivo mos resistente alla radiazione ionizzante |
| US11/982,442 US7791147B2 (en) | 2006-11-02 | 2007-10-31 | MOS device resistant to ionizing radiation |
| JP2007285476A JP2008182191A (ja) | 2006-11-02 | 2007-11-01 | 電離放射線に対して耐性を示すｍｏｓデバイス |
| EP07119878A EP1918986A3 (en) | 2006-11-02 | 2007-11-02 | MOS Device resistant to ionizing radiatiion |
| US12/709,789 US8471330B2 (en) | 2006-11-02 | 2010-02-22 | MOS device resistant to ionizing radiation |
| US12/710,609 US8187943B2 (en) | 2006-11-02 | 2010-02-23 | MOS device resistant to ionizing radiation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT000785A ITTO20060785A1 (it) | 2006-11-02 | 2006-11-02 | Dispositivo mos resistente alla radiazione ionizzante |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ITTO20060785A1 true ITTO20060785A1 (it) | 2008-05-03 |
Family
ID=38966711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT000785A ITTO20060785A1 (it) | 2006-11-02 | 2006-11-02 | Dispositivo mos resistente alla radiazione ionizzante |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US7791147B2 (it) |
| EP (1) | EP1918986A3 (it) |
| JP (1) | JP2008182191A (it) |
| IT (1) | ITTO20060785A1 (it) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090159927A1 (en) * | 2007-12-21 | 2009-06-25 | Infineon Technologies Austria Ag | Integrated circuit device and method for its production |
| JP4935789B2 (ja) * | 2008-10-06 | 2012-05-23 | トヨタ自動車株式会社 | 半導体装置の放射線照射試験方法 |
| JP5679821B2 (ja) * | 2008-12-23 | 2015-03-04 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| US20100314695A1 (en) * | 2009-06-10 | 2010-12-16 | International Rectifier Corporation | Self-aligned vertical group III-V transistor and method for fabricated same |
| US8952458B2 (en) | 2011-04-14 | 2015-02-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gate dielectric layer having interfacial layer and high-K dielectric over the interfacial layer |
| CN102339867A (zh) * | 2011-10-28 | 2012-02-01 | 上海宏力半导体制造有限公司 | 一种vdmos器件及其的形成方法 |
| CN102544104A (zh) * | 2012-01-12 | 2012-07-04 | 清华大学 | 一种耐高压的隧穿晶体管及其制备方法 |
| US9123798B2 (en) | 2012-12-12 | 2015-09-01 | General Electric Company | Insulating gate field effect transistor device and method for providing the same |
| CN104299944B (zh) * | 2013-07-16 | 2018-07-10 | 中芯国际集成电路制造(上海)有限公司 | 快闪存储器及其形成方法 |
| CN104392932A (zh) * | 2014-12-10 | 2015-03-04 | 中国电子科技集团公司第四十七研究所 | 一种vdmos器件及其制造方法 |
| CN104600121A (zh) * | 2015-01-15 | 2015-05-06 | 东南大学 | 一种高可靠性p型碳化硅纵向金属氧化物半导体管 |
| CN104617144A (zh) * | 2015-01-15 | 2015-05-13 | 东南大学 | 一种高可靠性n型碳化硅纵向金属氧化物半导体管 |
| CN105870009A (zh) * | 2015-01-21 | 2016-08-17 | 北大方正集团有限公司 | 功率器件的制备方法和功率器件 |
| US9842912B2 (en) | 2015-08-19 | 2017-12-12 | Fuji Electric Co., Ltd. | Semiconductor device and method of manufacturing semiconductor device |
| CN109192659B (zh) * | 2018-08-31 | 2020-08-11 | 江苏丽隽功率半导体有限公司 | 一种耗尽型场效应管的制作方法 |
| US10957791B2 (en) * | 2019-03-08 | 2021-03-23 | Infineon Technologies Americas Corp. | Power device with low gate charge and low figure of merit |
| CN112510080B (zh) * | 2020-11-30 | 2023-06-06 | 西安微电子技术研究所 | 一种抗单粒子高压mos场效应晶体管的辐射加固结构和制备方法 |
| CN114597251B (zh) * | 2022-03-03 | 2023-05-26 | 电子科技大学 | 一种抗总剂量辐射加固的屏蔽栅vdmos |
| CN115832025A (zh) * | 2022-11-21 | 2023-03-21 | 电子科技大学 | 一种具有二阶氧化层的SiC MOSFET结构 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4974059A (en) * | 1982-12-21 | 1990-11-27 | International Rectifier Corporation | Semiconductor high-power mosfet device |
| US4587713A (en) * | 1984-02-22 | 1986-05-13 | Rca Corporation | Method for making vertical MOSFET with reduced bipolar effects |
| DE3851815T2 (de) | 1987-09-24 | 1995-05-24 | Mitsubishi Electric Corp | Feldeffekttransistor und dessen Herstellungsmethode. |
| US5355007A (en) * | 1990-11-23 | 1994-10-11 | Texas Instruments Incorporated | Devices for non-volatile memory, systems and methods |
| US5296393A (en) * | 1990-11-23 | 1994-03-22 | Texas Instruments Incorporated | Process for the simultaneous fabrication of high-and-low-voltage semiconductor devices, integrated circuit containing the same, systems and methods |
| US5204541A (en) * | 1991-06-28 | 1993-04-20 | Texas Instruments Incorporated | Gated thyristor and process for its simultaneous fabrication with high- and low-voltage semiconductor devices |
| US5273922A (en) | 1992-09-11 | 1993-12-28 | Motorola, Inc. | High speed, low gate/drain capacitance DMOS device |
| US5498554A (en) * | 1994-04-08 | 1996-03-12 | Texas Instruments Incorporated | Method of making extended drain resurf lateral DMOS devices |
| US5705835A (en) | 1994-11-25 | 1998-01-06 | Fuji Electric Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US5674766A (en) * | 1994-12-30 | 1997-10-07 | Siliconix Incorporated | Method of making a trench MOSFET with multi-resistivity drain to provide low on-resistance by varying dopant concentration in epitaxial layer |
| US5973367A (en) * | 1995-10-13 | 1999-10-26 | Siliconix Incorporated | Multiple gated MOSFET for use in DC-DC converter |
| US6084268A (en) * | 1996-03-05 | 2000-07-04 | Semiconductor Components Industries, Llc | Power MOSFET device having low on-resistance and method |
| US5973368A (en) * | 1996-06-05 | 1999-10-26 | Pearce; Lawrence G. | Monolithic class D amplifier |
| US6048759A (en) * | 1998-02-11 | 2000-04-11 | Magepower Semiconductor Corporation | Gate/drain capacitance reduction for double gate-oxide DMOS without degrading avalanche breakdown |
| US6252278B1 (en) | 1998-05-18 | 2001-06-26 | Monolithic Power Systems, Inc. | Self-aligned lateral DMOS with spacer drift region |
| JP3602751B2 (ja) | 1999-09-28 | 2004-12-15 | 株式会社東芝 | 高耐圧半導体装置 |
| US6407591B1 (en) * | 2000-06-30 | 2002-06-18 | Intel Corporation | Self-configurable clock input buffer compatible with high-voltage single-ended and low-voltage differential clock signals |
| KR100377130B1 (ko) | 2000-11-22 | 2003-03-19 | 페어차일드코리아반도체 주식회사 | 반도체 소자 및 그 제조 방법 |
| US6486034B1 (en) | 2001-07-20 | 2002-11-26 | Taiwan Semiconductor Manufacturing Company | Method of forming LDMOS device with double N-layering |
| US7304348B2 (en) | 2001-08-17 | 2007-12-04 | Ihp Gmbh - Innovations For High Performance Microelectronics/Institut Fur Innovative Mikroelektronik | DMOS transistor |
| US6734493B2 (en) * | 2002-02-08 | 2004-05-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lateral double diffused metal oxide semiconductor (LDMOS) device with aligned buried layer isolation layer |
| KR100442881B1 (ko) * | 2002-07-24 | 2004-08-02 | 삼성전자주식회사 | 고전압 종형 디모스 트랜지스터 및 그 제조방법 |
| US20040164346A1 (en) * | 2003-02-20 | 2004-08-26 | Semiconductor Components Industries, Llc. | Power switching transistor with low drain to gate capacitance |
| US6900101B2 (en) * | 2003-06-13 | 2005-05-31 | Texas Instruments Incorporated | LDMOS transistors and methods for making the same |
| US6825531B1 (en) | 2003-07-11 | 2004-11-30 | Micrel, Incorporated | Lateral DMOS transistor with a self-aligned drain region |
| EP1503423B1 (en) * | 2003-07-31 | 2010-04-28 | STMicroelectronics Srl | Method of making a MIS power semiconductor device |
| US7285822B2 (en) * | 2005-02-11 | 2007-10-23 | Alpha & Omega Semiconductor, Inc. | Power MOS device |
| DE102005042827A1 (de) | 2005-09-09 | 2007-03-22 | Atmel Germany Gmbh | Hochvolt-Feldeffekttransistor und Verfahren zur Herstellung eines Hochvolt-Feldeffekttransistors |
| JP5307973B2 (ja) | 2006-02-24 | 2013-10-02 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置 |
-
2006
- 2006-11-02 IT IT000785A patent/ITTO20060785A1/it unknown
-
2007
- 2007-10-31 US US11/982,442 patent/US7791147B2/en active Active
- 2007-11-01 JP JP2007285476A patent/JP2008182191A/ja not_active Withdrawn
- 2007-11-02 EP EP07119878A patent/EP1918986A3/en not_active Ceased
-
2010
- 2010-02-22 US US12/709,789 patent/US8471330B2/en active Active
- 2010-02-23 US US12/710,609 patent/US8187943B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008182191A (ja) | 2008-08-07 |
| US7791147B2 (en) | 2010-09-07 |
| EP1918986A9 (en) | 2009-05-13 |
| US8471330B2 (en) | 2013-06-25 |
| US20110042739A1 (en) | 2011-02-24 |
| EP1918986A3 (en) | 2009-03-18 |
| US20080135928A1 (en) | 2008-06-12 |
| US8187943B2 (en) | 2012-05-29 |
| EP1918986A2 (en) | 2008-05-07 |
| US20100151647A1 (en) | 2010-06-17 |
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