BRPI0822034A2 - Dispositivo - Google Patents
DispositivoInfo
- Publication number
- BRPI0822034A2 BRPI0822034A2 BRPI0822034-4A BRPI0822034A BRPI0822034A2 BR PI0822034 A2 BRPI0822034 A2 BR PI0822034A2 BR PI0822034 A BRPI0822034 A BR PI0822034A BR PI0822034 A2 BRPI0822034 A2 BR PI0822034A2
- Authority
- BR
- Brazil
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
- H10H20/835—Reflective materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/032—Manufacture or treatment of electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/960,180 US7985979B2 (en) | 2007-12-19 | 2007-12-19 | Semiconductor light emitting device with light extraction structures |
| PCT/IB2008/055430 WO2009095748A2 (en) | 2007-12-19 | 2008-12-18 | Semiconductor light emitting device with light extraction structures |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BRPI0822034A2 true BRPI0822034A2 (pt) | 2015-07-21 |
Family
ID=40787530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BRPI0822034-4A BRPI0822034A2 (pt) | 2007-12-19 | 2008-12-18 | Dispositivo |
Country Status (9)
| Country | Link |
|---|---|
| US (6) | US7985979B2 (pt) |
| EP (1) | EP2225784B1 (pt) |
| JP (1) | JP5555174B2 (pt) |
| KR (4) | KR20170024064A (pt) |
| CN (1) | CN101904019B (pt) |
| BR (1) | BRPI0822034A2 (pt) |
| RU (1) | RU2491682C2 (pt) |
| TW (1) | TWI499075B (pt) |
| WO (1) | WO2009095748A2 (pt) |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4829190B2 (ja) * | 2007-08-22 | 2011-12-07 | 株式会社東芝 | 発光素子 |
| JP5284036B2 (ja) * | 2007-11-14 | 2013-09-11 | キヤノン株式会社 | 発光装置 |
| US7985979B2 (en) * | 2007-12-19 | 2011-07-26 | Koninklijke Philips Electronics, N.V. | Semiconductor light emitting device with light extraction structures |
| JP5282503B2 (ja) | 2008-09-19 | 2013-09-04 | 日亜化学工業株式会社 | 半導体発光素子 |
| US20100327300A1 (en) * | 2009-06-25 | 2010-12-30 | Koninklijke Philips Electronics N.V. | Contact for a semiconductor light emitting device |
| US8044422B2 (en) * | 2009-11-25 | 2011-10-25 | Huga Optotech Inc. | Semiconductor light emitting devices with a substrate having a plurality of bumps |
| KR101761385B1 (ko) * | 2010-07-12 | 2017-08-04 | 엘지이노텍 주식회사 | 발광 소자 |
| KR20120040448A (ko) * | 2010-10-19 | 2012-04-27 | 삼성엘이디 주식회사 | 수직형 발광 소자 |
| US8985799B2 (en) * | 2010-11-30 | 2015-03-24 | Sharp Kabushiki Kaisha | Lighting device, display device and television device |
| DE102011003684B4 (de) | 2011-02-07 | 2026-01-22 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
| JP5050109B2 (ja) * | 2011-03-14 | 2012-10-17 | 株式会社東芝 | 半導体発光素子 |
| TWI411136B (zh) * | 2011-05-10 | 2013-10-01 | Lextar Electronics Corp | 半導體發光結構 |
| JP6025367B2 (ja) * | 2011-05-12 | 2016-11-16 | キヤノン株式会社 | 有機el素子 |
| JP5117596B2 (ja) * | 2011-05-16 | 2013-01-16 | 株式会社東芝 | 半導体発光素子、ウェーハ、および窒化物半導体結晶層の製造方法 |
| CN102299243A (zh) * | 2011-09-14 | 2011-12-28 | 青岛理工大学 | 一种薄膜倒装光子晶体led芯片及其制造方法 |
| JP2013073887A (ja) * | 2011-09-29 | 2013-04-22 | Canon Inc | 表示装置 |
| CN104040735B (zh) | 2011-10-06 | 2017-08-25 | 皇家飞利浦有限公司 | 半导体发光器件的表面处理 |
| EP2791983A4 (en) | 2011-12-12 | 2015-08-12 | Sensor Electronic Tech Inc | UV REFLECTION CONTACT |
| US9818912B2 (en) | 2011-12-12 | 2017-11-14 | Sensor Electronic Technology, Inc. | Ultraviolet reflective contact |
| EP2823515A4 (en) * | 2012-03-06 | 2015-08-19 | Soraa Inc | LIGHT-EMITTING DIODES WITH MATERIAL LAYERS WITH LOW BREAKING INDEX TO REDUCE LIGHT PIPE EFFECTS |
| JP5462333B1 (ja) * | 2012-09-21 | 2014-04-02 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
| DE102012111573A1 (de) * | 2012-11-29 | 2014-03-13 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zum Herstellen eines optoelektronischen Halbleiterbauelements |
| US9768357B2 (en) | 2013-01-09 | 2017-09-19 | Sensor Electronic Technology, Inc. | Ultraviolet reflective rough adhesive contact |
| WO2014110197A1 (en) | 2013-01-09 | 2014-07-17 | Sensor Electronic Technology, Inc. | Ultraviolet reflective rough adhesive contact |
| US10276749B2 (en) | 2013-01-09 | 2019-04-30 | Sensor Electronic Technology, Inc. | Ultraviolet reflective rough adhesive contact |
| US9548424B2 (en) | 2013-02-04 | 2017-01-17 | Industrial Technology Research Institute | Light emitting diode |
| US9425359B2 (en) | 2013-02-04 | 2016-08-23 | Industrial Technology Research Institute | Light emitting diode |
| TWI557942B (zh) * | 2013-02-04 | 2016-11-11 | 財團法人工業技術研究院 | 發光二極體 |
| JP2016513882A (ja) | 2013-03-13 | 2016-05-16 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 多孔質の反射性コンタクトを作製する方法及び装置 |
| TWI611602B (zh) * | 2013-05-24 | 2018-01-11 | 晶元光電股份有限公司 | 具有高效率反射結構之發光元件 |
| TWI575776B (zh) | 2013-05-24 | 2017-03-21 | 晶元光電股份有限公司 | 具有高效率反射結構之發光元件 |
| TWI550909B (zh) | 2014-03-21 | 2016-09-21 | 茂邦電子有限公司 | A flip chip type light emitting diode and a method for manufacturing the same, and a flip chip type structure thereof |
| CN106415845B (zh) * | 2014-07-22 | 2019-12-10 | 株式会社Flosfia | 结晶性半导体膜和板状体以及半导体装置 |
| JP6156402B2 (ja) | 2015-02-13 | 2017-07-05 | 日亜化学工業株式会社 | 発光装置 |
| JP6010169B2 (ja) * | 2015-03-31 | 2016-10-19 | 株式会社東芝 | 半導体発光素子 |
| KR102554702B1 (ko) * | 2015-08-25 | 2023-07-13 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 및 이를 포함하는 발광소자 패키지 |
| US10529894B2 (en) * | 2015-11-20 | 2020-01-07 | Lumileds Holding B.V. | Contact etching and metallization for improved LED device performance and reliability |
| KR20170091334A (ko) * | 2016-02-01 | 2017-08-09 | 엘지전자 주식회사 | 백라이트 유닛 및 이를 포함하는 디스플레이 장치 |
| JP7209339B2 (ja) * | 2016-06-10 | 2023-01-20 | スージョウ レキン セミコンダクター カンパニー リミテッド | 半導体素子 |
| KR102521625B1 (ko) * | 2016-06-30 | 2023-04-13 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 |
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| WO2018204402A1 (en) | 2017-05-01 | 2018-11-08 | Ohio State Innovation Foundation | Tunnel junction ultraviolet light emitting diodes with enhanced light extraction efficiency |
| US20190237629A1 (en) | 2018-01-26 | 2019-08-01 | Lumileds Llc | Optically transparent adhesion layer to connect noble metals to oxides |
| US11112652B2 (en) * | 2018-12-11 | 2021-09-07 | Lg Display Co., Ltd. | Backlight unit and display device including the same technical field |
| US20240222938A1 (en) * | 2021-05-05 | 2024-07-04 | Nilt Switzerland Gmbh | Manufacturing of surface emitting lasers including an integrated metastructure |
| US20240282888A1 (en) * | 2021-06-16 | 2024-08-22 | Google Llc | Micro-led with improved light extraction |
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-
2007
- 2007-12-19 US US11/960,180 patent/US7985979B2/en active Active
-
2008
- 2008-12-18 BR BRPI0822034-4A patent/BRPI0822034A2/pt not_active Application Discontinuation
- 2008-12-18 EP EP08871746.7A patent/EP2225784B1/en active Active
- 2008-12-18 KR KR1020177002539A patent/KR20170024064A/ko not_active Ceased
- 2008-12-18 CN CN2008801213563A patent/CN101904019B/zh active Active
- 2008-12-18 JP JP2010539028A patent/JP5555174B2/ja active Active
- 2008-12-18 RU RU2010129431/28A patent/RU2491682C2/ru active
- 2008-12-18 KR KR1020187005990A patent/KR20180027622A/ko not_active Ceased
- 2008-12-18 WO PCT/IB2008/055430 patent/WO2009095748A2/en not_active Ceased
- 2008-12-18 KR KR1020107015938A patent/KR101600384B1/ko active Active
- 2008-12-18 KR KR1020167005175A patent/KR101702500B1/ko active Active
- 2008-12-18 TW TW097149448A patent/TWI499075B/zh active
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2011
- 2011-06-16 US US13/161,541 patent/US8242521B2/en active Active
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- 2012-07-03 US US13/540,913 patent/US9142726B2/en active Active
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- 2015-08-27 US US14/837,339 patent/US9935242B2/en active Active
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20110085875A (ko) | 2011-07-27 |
| US10164155B2 (en) | 2018-12-25 |
| TW200937688A (en) | 2009-09-01 |
| CN101904019A (zh) | 2010-12-01 |
| KR20180027622A (ko) | 2018-03-14 |
| US9142726B2 (en) | 2015-09-22 |
| KR101702500B1 (ko) | 2017-02-06 |
| WO2009095748A3 (en) | 2010-01-07 |
| US10734553B2 (en) | 2020-08-04 |
| WO2009095748A9 (en) | 2009-11-19 |
| WO2009095748A2 (en) | 2009-08-06 |
| EP2225784A2 (en) | 2010-09-08 |
| US20090159908A1 (en) | 2009-06-25 |
| RU2010129431A (ru) | 2012-01-27 |
| TWI499075B (zh) | 2015-09-01 |
| US8242521B2 (en) | 2012-08-14 |
| JP5555174B2 (ja) | 2014-07-23 |
| RU2491682C2 (ru) | 2013-08-27 |
| US20180053880A1 (en) | 2018-02-22 |
| US9935242B2 (en) | 2018-04-03 |
| EP2225784B1 (en) | 2019-09-25 |
| US20110241056A1 (en) | 2011-10-06 |
| US20190280161A1 (en) | 2019-09-12 |
| KR101600384B1 (ko) | 2016-03-08 |
| US20150364654A1 (en) | 2015-12-17 |
| JP2011508414A (ja) | 2011-03-10 |
| US7985979B2 (en) | 2011-07-26 |
| KR20160030325A (ko) | 2016-03-16 |
| KR20170024064A (ko) | 2017-03-06 |
| US20120267668A1 (en) | 2012-10-25 |
| CN101904019B (zh) | 2013-08-07 |
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