ITTO910129U1 - Dispositivo di introduzione dei reagenti in un impianto di deposizione di metallorganici allo stato vapore - Google Patents
Dispositivo di introduzione dei reagenti in un impianto di deposizione di metallorganici allo stato vaporeInfo
- Publication number
- ITTO910129U1 ITTO910129U1 IT000129U ITTO910129U ITTO910129U1 IT TO910129 U1 ITTO910129 U1 IT TO910129U1 IT 000129 U IT000129 U IT 000129U IT TO910129 U ITTO910129 U IT TO910129U IT TO910129 U1 ITTO910129 U1 IT TO910129U1
- Authority
- IT
- Italy
- Prior art keywords
- metallorganic
- introduction device
- storage plant
- reagent introduction
- reagent
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Investigating Or Analyzing Non-Biological Materials By The Use Of Chemical Means (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Sampling And Sample Adjustment (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT000129 IT223201Z2 (it) | 1991-06-04 | 1991-06-04 | Dispositivo di introduzione dei reagenti in un impianto di deposizionedi metallorganici allo stato vapore |
| US07/856,243 US5224513A (en) | 1991-06-04 | 1992-03-25 | Device for introducing reagents into an organometallic vapor phase deposition apparatus |
| CA 2069694 CA2069694C (en) | 1991-06-04 | 1992-05-27 | Device for introducing reagents into an organometallic vapour phase deposition apparatus |
| EP19920109299 EP0535308B1 (en) | 1991-06-04 | 1992-06-02 | Device for introducing reagents into an organometallic vapour phase deposition apparatus |
| DE1992109299 DE535308T1 (de) | 1991-06-04 | 1992-06-02 | Vorrichtung zur Reagenzeinleitung in eine Vorrichtung für Metall-organische Abscheidung aus der Gasphase. |
| DE1992601545 DE69201545T2 (de) | 1991-06-04 | 1992-06-02 | Vorrichtung zur Reagenzeinleitung in eine Vorrichtung für Metall-organische Abscheidung aus der Gasphase. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT000129 IT223201Z2 (it) | 1991-06-04 | 1991-06-04 | Dispositivo di introduzione dei reagenti in un impianto di deposizionedi metallorganici allo stato vapore |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| ITTO910129V0 ITTO910129V0 (it) | 1991-06-04 |
| ITTO910129U1 true ITTO910129U1 (it) | 1992-12-04 |
| IT223201Z2 IT223201Z2 (it) | 1995-06-13 |
Family
ID=11408978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT000129 IT223201Z2 (it) | 1991-06-04 | 1991-06-04 | Dispositivo di introduzione dei reagenti in un impianto di deposizionedi metallorganici allo stato vapore |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0535308B1 (it) |
| CA (1) | CA2069694C (it) |
| DE (2) | DE535308T1 (it) |
| IT (1) | IT223201Z2 (it) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4747367A (en) * | 1986-06-12 | 1988-05-31 | Crystal Specialties, Inc. | Method and apparatus for producing a constant flow, constant pressure chemical vapor deposition |
-
1991
- 1991-06-04 IT IT000129 patent/IT223201Z2/it active IP Right Grant
-
1992
- 1992-05-27 CA CA 2069694 patent/CA2069694C/en not_active Expired - Fee Related
- 1992-06-02 DE DE1992109299 patent/DE535308T1/de active Pending
- 1992-06-02 DE DE1992601545 patent/DE69201545T2/de not_active Expired - Fee Related
- 1992-06-02 EP EP19920109299 patent/EP0535308B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE69201545T2 (de) | 1995-08-03 |
| DE535308T1 (de) | 1994-02-24 |
| ITTO910129V0 (it) | 1991-06-04 |
| IT223201Z2 (it) | 1995-06-13 |
| DE69201545D1 (de) | 1995-04-06 |
| EP0535308B1 (en) | 1995-03-01 |
| CA2069694C (en) | 1999-01-05 |
| EP0535308A1 (en) | 1993-04-07 |
| CA2069694A1 (en) | 1992-12-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 0001 | Granted |