JP2000077720A - Optical semiconductor device - Google Patents

Abstract

(57) [Problem] To make the outer shape of a light emitting element or a light receiving element as thin as possible, and to reduce the size of a module or set incorporating the same. SOLUTION: There are semiconductor chips 23 and 24 as a light emitting element and a light receiving element, and a resin sealing body 25 for sealing them.
Is made of a material that is transparent to light. Further, a groove 27 is formed on a region where light is emitted from the element and on a region where light is incident on the element, and the reflection surface 26 is formed here.
As a result, light can be emitted and incident through the side surface E. Furthermore, since the slope 30 is provided above the reflection surface, the strength is high.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor device and an optical semiconductor module mounting the same.
In particular, the structure of the optical semiconductor device is made thinner, and light is emitted (or made incident) from the thinner side surface, thereby realizing miniaturization and thinning of a device using the same.

[0002]

2. Description of the Related Art Recently, multimedia equipment such as a sub-notebook personal computer, a portable information terminal, and an electronic still camera has been remarkably developed.

[0003] Moreover, 7 million portable devices are sold annually, and about 80% adopt the infrared system of the IrDA (InfraredData Association) standard. That is, transmission / reception between the external device and the main body via an infrared signal is required, and a light emitting element that emits infrared light and a light receiving element that receives infrared light are required.

An optical head used in an optical recording / reproducing apparatus such as an MD or a CD irradiates a beam onto an optical recording medium to detect a modulated beam from the optical recording medium, thereby recording and reproducing information. I do. Also here, a light emitting element and a light receiving element are required.

However, these light emitting elements and light receiving elements have not been reduced in size. For example, FIG.
The technique described in Japanese Patent Application Publication No. 8085 is described in which a semiconductor laser 1 is directly disposed on a semiconductor substrate 2 and a prism 3 having a trapezoidal cross section is fixed to the semiconductor substrate 2. Figure number 4
Is an optical recording medium. The inclined surface 5 of the prism 3 facing the semiconductor laser 1 is a semi-transmissive reflecting surface, and the prism surface 6 in contact with the semiconductor substrate 2 has a portion other than the photodetector (light receiving element) 7. The prism surfaces 8 facing each other are reflection surfaces.

A beam 9 emitted from the semiconductor laser 1 and incident on the prism 3 from the inclined surface 5 is reflected by the reflecting surfaces 6 and 8 and detected by the photodetector 7.

FIG. 6 shows an infrared data communication module 11, which includes an infrared LED, an LED driver, a PIN photodiode, an amplifier, and the like. For example, the LED 12 is mounted on a substrate, and light emitted from the LED 12 is emitted to the outside via the lens 13. The photodiode 14 mounted on the substrate has a lens 15
And enters the mold 11.

[0008]

In the above-mentioned module, since the optical device is mounted above the semiconductor substrate in FIG. 5, there is a problem that a very advanced technique is required and the price is high. . In FIG. 6, light needs to be put in and out of the mold body, and it is necessary to set another optical semiconductor device at the opposing position. Therefore, a set incorporating these has a thickness and cannot be miniaturized. There was a problem.

In FIG. 4, if light is to be taken in and out in the horizontal direction, the lead 1 of the optical semiconductor device 11 must be connected as shown in FIG.
6 must be bent at 90 degrees, and depending on how the lead 11 is bent, there is a problem in fixing the position and stability of the optical semiconductor device 11.

[0010]

SUMMARY OF THE INVENTION The present invention has been made in view of the aforementioned problems, and has a semiconductor chip having a light receiving surface and / or a light emitting surface, a sealing member for sealing the semiconductor chip, and the sealing member. A groove provided on a surface facing the semiconductor chip, and a reflecting surface intersecting a perpendicular line of the light receiving surface or the light emitting surface provided at the groove at a predetermined angle, so that an optical path of light passes through the reflecting surface. The problem is solved by being ejected from the side surface of the sealing body via the sealing member, and a part of the reflection surface, which is not on the optical path to the light receiving surface, is more than the predetermined angle of the reflection surface. The optical semiconductor device has a small angle with respect to the perpendicular of the surface.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG. FIG. 1A is a plan view of the optical semiconductor device, and FIG. 1B is a cross-sectional view taken along line AA of the plan view.

First, there is a lead frame. This lead frame is composed of islands 21 and leads 22 and is made of, for example, Cu, on which a semiconductor chip 23 serving as a light emitting unit and a semiconductor chip 24 serving as a light receiving unit are fixed via fixing means such as solder. .

The semiconductor chip 23 is, for example, an infrared LE.
D, a light emitting element such as a laser, and a driving circuit may be integrated. Since the light of the infrared LED is emitted upward from the upper surface of the chip, it is arranged horizontally on the island 21 as shown in FIG.

The semiconductor chip 24 is a photosensor as a light receiving element, and is a PIN diode or the like. A driving circuit for the PIN diode may be integrated, and a driving circuit for an LED or a laser may be integrated. It may be configured.

A bonding pad is formed around these semiconductor chips 23 and 24.
A plurality of leads 22 extend from the periphery of the chip to the outside,
The bonding pad and the lead 22 are connected by a thin metal wire.

The tips of the leads and the semiconductor chip are sealed with a sealing body 25 that is transparent to light, such as a transparent epoxy resin. Here, the sealing material only needs to be transparent to light, and the material is not particularly limited. Also LE
In D, generally, the emitted light is infrared light, so that any material that transmits at least this infrared light may be used. That is, it is sufficient that the light transmits at least the predetermined light. The sealing body 25 has a groove 27 having a reflection surface 26.

A feature of the present invention resides in the reflection surface 26,
This reflection surface is formed by forming a groove 27 in the sealing body 25, and light incident from the side surface E is reflected by the reflection surface 26 and enters the semiconductor chip 24. As a result, light is emitted from the side surface E of the sealing body 25 and the side
Incident on the light source.

In general, a semiconductor chip constituting a light-emitting section and a light-receiving section constitutes an optical semiconductor device by forming a prism and a lens on the semiconductor chip. However, since the optical device becomes thicker and optical devices are arranged on and around the device, it is difficult to make the device thinner and smaller. However, the reflecting surface 26 which is a part of the groove 27 of the sealing body allows light to enter and exit from the side surface E of the sealing body 25, so that no prism is required and the lens 2
9 can be formed on this side E if needed. Therefore, the thickness of the device itself can be reduced.

The lead frame 22 is made of Cu,
The thickness is about 0.125mm, and the thickness of the semiconductor chip is
For example, it is about 250 to 300 μm. In addition, the sealing body 25
Is a transparent epoxy material, for example, and the overall thickness is about 1
mm to 1.5 mm. It goes without saying that if the thickness of the chip is reduced, it can be further reduced.

The shape of the sealing body 25 can be formed by performing resin sealing using a mold such as transfer molding or injection and using a mold in which a groove 27 is formed at this time. it can.

If the angle of the reflecting surface 26 is, for example, 45 ° with respect to a perpendicular line of the semiconductor chip, light incident from the side can be made perpendicular to the semiconductor chip. However, since the end of the reflection surface indicated by the circle B is the end of the optical semiconductor device, the intensity is low, and there is a possibility that the end is applied.

Therefore, as shown in FIG. 2, a slope 30 having a steeper angle than the reflection surface 26 may be formed in a portion of the reflection surface 26 which is not on the optical path to the light receiving surface of the semiconductor chip 23. . Thereby, the thickness of the sealing body at the end of the reflection surface 26 can be increased, and the strength of the optical semiconductor device is increased. Further, since the flat portion 28 can be formed on the upper surface of the optical semiconductor device, workability when the optical semiconductor device is installed on a circuit board is improved.

If the groove 27 is formed by using a mold, the resin and the mold come into close contact with each other, and the optical semiconductor device may be damaged when the optical semiconductor device is detached from the mold. In order to prevent this, it is necessary that the slope 30 has an inclination of about 12 ° with respect to a perpendicular to the optical semiconductor device. The draft taper for ordinary resin is generally about 5 °, but is preferably at least 10 ° or more from the viewpoint of the viscosity of the transparent resin. Of course, if the angle is large, that is, if the slope is gentle, the releasability will be better, but the flat part 28 will be narrowed accordingly, and the strength of the optical semiconductor device will be reduced.

As described above, the lens 29 can be formed on the side surface E. When the lens 29 is formed integrally with the sealing body, the thickness is increased by the thickness of the lens, and therefore, where the thickness of the lens 29 is large, the strength is high. Therefore, in the region where the lens 29 is not formed or the side surface E where the lens 29 is thin, the strength needs to be particularly increased. Further, in the optical semiconductor device of the present embodiment, the groove 27 having a thickness of about half the thickness of the sealing body is formed as the reflection surface. However, with such a structure, when an external force is applied, the optical semiconductor device may be broken around the bottom of the groove 27. Therefore, as shown in FIG. 3, the lens 29 of the groove 27 is not formed.
Alternatively, the wall 32 may be located in an area where the lens 29 is thin and weak.
To form With this structure, the strength of the optical semiconductor device is further increased, and the optical semiconductor device can be prevented from being broken by the wall 32 serving as a support. At this time, it is desirable that the position of the wall body 32 is not immediately above the semiconductor chips 23 and 24. This is because no reflecting surface is formed at the position of the wall 32, and the amount of light incident on the semiconductor chip 13 or emitted from the semiconductor chip 24 decreases.

As shown in FIG. 4, a slope 30 may be further formed. The slope 30 increases the thickness of the upper surface 28 and the wall 32 is formed in a region where the lens 29 is not formed, so that higher strength can be realized.

[0026]

According to the present invention, a semiconductor chip having a light receiving surface or a light emitting surface, a sealing member for sealing the semiconductor chip, and a groove having a reflecting surface provided on the upper surface of the sealing member are provided. The optical semiconductor device can be reduced in size, and furthermore, a part of the reflection surface, which is not on the optical path to the light receiving surface, has an angle formed by a perpendicular to the light receiving surface more than a predetermined angle of the reflection surface. Since it is small, the area of the upper surface of the optical semiconductor device can be secured, and the strength of the optical semiconductor device can be increased.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram of an optical semiconductor device according to an embodiment of the present invention.

FIG. 2 is an explanatory diagram of an optical semiconductor device according to an embodiment of the present invention.

FIG. 3 is an explanatory diagram of an optical semiconductor device according to an embodiment of the present invention.

FIG. 4 is an explanatory diagram of an optical semiconductor device according to an embodiment of the present invention.

FIG. 5 is a schematic view of a conventional optical semiconductor device and an optical device assembled.

FIG. 6 is a schematic view of a conventional optical semiconductor device.

FIG. 7 is a diagram in which a conventional optical semiconductor device is mounted on a circuit board.

Continuation of the front page (72) Ko Ochiai 2-5-2-5 Keihanhondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. (72) Inventor Hiroshi Inoguchi 2-5-2-5 Keihanhondori, Moriguchi-shi, Osaka Inside Sanyo Electric Co., Ltd. (72) Inventor Tsutomu Ishikawa 2-5-2-5 Keihanhondori, Moriguchi-shi, Osaka Prefecture Inside Sanyo Electric Co., Ltd. (72) Inventor Satoshi 2-5-2 Keihanhondori, Moriguchi-shi, Osaka Prefecture No. 5 Sanyo Electric Co., Ltd. (72) Inventor Hiroshi Kobori 2-5-5 Keihanhondori, Moriguchi-shi, Osaka F-term in Sanyo Electric Co., Ltd. 5F041 AA47 DA13 DA17 DA44 DA57 EE11 FF14

Claims (4)

[Claims] 1. A semiconductor chip having a light receiving surface, a sealing body for sealing the semiconductor chip, a groove provided on a surface of the sealing body facing the semiconductor chip, and a groove provided on the groove. It has a reflective surface that intersects a perpendicular to the light receiving surface at a predetermined angle, and a part of the reflective surface that is not on the optical path to the light receiving surface is more than the predetermined angle of the reflective surface, An optical semiconductor device characterized by having a small angle with a vertical line. 2. A semiconductor chip having a light emitting surface, a sealing body for sealing the semiconductor chip, a groove provided on a surface of the sealing body facing the semiconductor chip, and a groove provided on the groove. It has a reflecting surface that intersects a perpendicular line of the light emitting surface at a predetermined angle, and a part of the reflecting surface that is not on the optical path to the light emitting surface is more than a predetermined angle of the reflecting surface. An optical semiconductor device characterized by having a small angle with a vertical line. 3. A semiconductor chip having a light receiving surface, a sealing body for sealing the semiconductor chip, and a side face of the sealing body.
A lens provided integrally with the sealing body, a groove provided on a surface of the sealing body facing the semiconductor chip, and a reflecting surface intersecting a perpendicular to the light receiving surface provided at the groove at a predetermined angle. An optical semiconductor device, characterized in that a wall is formed in the groove facing a region where the lens is not formed on a side surface of the sealing body on which the lens is formed. . 4. A semiconductor chip having a light emitting surface, a sealing body for sealing the semiconductor chip, and a side face of the sealing body,
A lens provided integrally with the sealing body, a groove provided on a surface of the sealing body facing the semiconductor chip, and a reflecting surface intersecting a perpendicular to the light emitting surface provided at the groove at a predetermined angle. An optical semiconductor device, characterized in that a wall is formed in the groove facing a region where the lens is not formed on a side surface of the sealing body on which the lens is formed. .