JP2000201008A - Microstrip line - Google Patents
Microstrip lineInfo
- Publication number
- JP2000201008A JP2000201008A JP11000548A JP54899A JP2000201008A JP 2000201008 A JP2000201008 A JP 2000201008A JP 11000548 A JP11000548 A JP 11000548A JP 54899 A JP54899 A JP 54899A JP 2000201008 A JP2000201008 A JP 2000201008A
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- insulator
- length
- insulating substrate
- standing wave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004020 conductor Substances 0.000 claims abstract description 51
- 239000012212 insulator Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 230000002950 deficient Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 7
- 230000005672 electromagnetic field Effects 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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- Waveguides (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、例えば、電圧制御
発振器の共振素子等に用いられるマイクロストリップラ
インに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microstrip line used for, for example, a resonance element of a voltage controlled oscillator.
【0002】[0002]
【従来の技術】従来のマイクロストリップラインを図7
に従って説明する。マイクロストリップラインは、例え
ば、発振回路の共振素子に用いられ、絶縁基板21の上
面に設けられた帯状の導体22からなっている。そし
て、導体22の一端22aは開放または短絡され、他端
22bは発振回路(図示せず)に接続されるようになっ
ている。2. Description of the Related Art A conventional microstrip line is shown in FIG.
It will be described according to. The microstrip line is used, for example, as a resonance element of an oscillation circuit, and includes a strip-shaped conductor 22 provided on an upper surface of an insulating substrate 21. One end 22a of the conductor 22 is opened or short-circuited, and the other end 22b is connected to an oscillation circuit (not shown).
【0003】ここで、導体22の線路上には電圧電流定
在波が発生する。そして、電流定在波の位相と電圧定在
波の位相とが互いにπ/4だけずれているので、電圧定
在波の波節点において電流定在波が波腹点、つまり電流
密度が最大の点となり、電圧定在波の波腹点において電
流定在波が波節点となる。[0005] Here, a voltage / current standing wave is generated on the line of the conductor 22. Since the phase of the current standing wave and the phase of the voltage standing wave are shifted from each other by π / 4, the current standing wave is an antinode at the node of the voltage standing wave, that is, the current density is the largest. The current standing wave becomes a node at the antinode of the voltage standing wave.
【0004】また、波節点と波腹点との間では電圧定在
波と電流定在波との位相関係によって、誘電性あるいは
容量性となり、マイクロストリップラインを共振素子と
して使用している。[0004] In addition, a microstrip line is used as a resonance element between a node and an antinode, depending on the phase relationship between the voltage standing wave and the current standing wave, to be dielectric or capacitive.
【0005】[0005]
【発明が解決しようとする課題】ところで、導体22に
高周波電流を流すと、表皮効果によって、高周波電流は
導体22の表面層において最も高くなる。また、高周波
電流は導体22に電流定在波となって流れるので、波腹
点において最も電流密度が高くなる。つまり、導体22
の表面層であって電流定在波の波腹点において最も電流
密度が高くなる。When a high-frequency current is applied to the conductor 22, the high-frequency current becomes highest in the surface layer of the conductor 22 due to the skin effect. Further, since the high-frequency current flows through the conductor 22 as a current standing wave, the current density is highest at the antinode. That is, the conductor 22
And the current density is highest at the antinode of the current standing wave.
【0006】ここで、導体22に流れる高周波電流は絶
縁基板21による誘電体損によってその流れが妨げら
れ、特に、電流密度の高い波腹点において最も誘電体損
の影響を受ける。このため、特に電流密度の高い波腹点
で最も高周波電流が流れにくくなり、その結果、共振素
子としてのQが大きく取れないという問題があった。Here, the flow of the high-frequency current flowing through the conductor 22 is hindered by the dielectric loss caused by the insulating substrate 21, and is particularly affected by the dielectric loss at the antinode where the current density is high. For this reason, a high-frequency current is most difficult to flow particularly at an antinode of a high current density. As a result, there is a problem that a large Q as a resonance element cannot be obtained.
【0007】本発明は、この問題を解決するためのもの
で、その目的は、マイクロストリップラインに高周波電
流を流したときに生じる誘電体損を軽減し、共振素子と
してのQを大きくすることにある。An object of the present invention is to solve this problem. An object of the present invention is to reduce a dielectric loss caused when a high-frequency current is applied to a microstrip line and to increase Q as a resonance element. is there.
【0008】[0008]
【課題を解決するための手段】上記問題を解決するため
の第一の解決手段として、絶縁基板の上面に設けられた
帯状の導体からなり、導体の長手方向の両側端に沿って
絶縁基板を切り欠いて形成した絶縁体欠如部を設けた構
成とした。As a first means for solving the above-mentioned problem, a strip-shaped conductor provided on an upper surface of an insulating substrate is provided, and the insulating substrate is formed along both longitudinal ends of the conductor. The configuration was such that an insulator lacking portion formed by cutting out was provided.
【0009】また、第二の解決手段として、絶縁体欠如
部を、導体に発生する電流定在波の波腹点の近傍に形成
した構成とした。[0009] As a second solution, the insulator lacking portion is formed near the antinode of the current standing wave generated in the conductor.
【0010】また、第三の解決手段として、縁体欠如部
の長手方向の長さを電流定在波の波長における波腹点と
波節点との間の長さの1/2とした構成とした。[0010] Further, as a third solution, a configuration is adopted in which the length in the longitudinal direction of the lacking portion of the edge is 1 / of the length between the antinode and the node at the wavelength of the current standing wave. did.
【0011】また、第四の解決手段として、絶縁体欠如
部を溝で構成し、溝の深さを絶縁体欠如部の幅とほぼ同
じ又はそれ以上にした構成とした。Further, as a fourth solution, the insulator lacking portion is constituted by a groove, and the depth of the groove is made substantially equal to or greater than the width of the insulator lacking portion.
【0012】また、第五の解決手段として、絶縁体欠如
部を、前記絶縁体を貫通する孔にした構成とした。[0015] As a fifth solution, the insulator lacking portion is formed as a hole penetrating the insulator.
【0013】[0013]
【発明の実施の形態】本発明のマイクロストリップライ
ンを図1乃至図6に従って説明する。ここで、図1は本
発明の第一の実施例の上面図を示し、図2は同じく第二
の実施例の上面図を示し、図3は同じく第三の実施例を
示し、図4は同じく第四の実施例を示し、図5は図1乃
至図4の5−5部における断面図を示し、図6は図1乃
至図4の他の要部断面図を示している。DESCRIPTION OF THE PREFERRED EMBODIMENTS A microstrip line according to the present invention will be described with reference to FIGS. Here, FIG. 1 shows a top view of the first embodiment of the present invention, FIG. 2 also shows a top view of the second embodiment, FIG. 3 shows the same of the third embodiment, and FIG. FIG. 5 is a sectional view taken along line 5-5 of FIGS. 1 to 4, and FIG. 6 is a sectional view of another essential part of FIGS.
【0014】まず、図1乃至図4において、本発明のマ
イクロストリップラインは、下面に接地導体1a(図
5、図6参照)を有する絶縁基板1の上面に設けられた
帯状の導体2からなっている。そして、導体2の長手方
向の両側端2aの全体又は一部分に沿って絶縁基板1を
切り欠いて形成した絶縁体欠如部3が形成されている。
そして、導体2は、その一端2bが開放または短絡さ
れ、他端2cが図示しない発振回路に接続されている。First, in FIGS. 1 to 4, the microstrip line of the present invention comprises a strip-shaped conductor 2 provided on the upper surface of an insulating substrate 1 having a ground conductor 1a (see FIGS. 5 and 6) on the lower surface. ing. An insulator lacking portion 3 is formed by cutting out the insulating substrate 1 along the whole or a part of both side ends 2 a in the longitudinal direction of the conductor 2.
The conductor 2 has one end 2b open or short-circuited, and the other end 2c connected to an oscillation circuit (not shown).
【0015】ここで、導体2に高周波電流が流れると、
導体2の周りには電磁界が発生するが、導体2の両側端
2aに沿って絶縁体欠如部3が設けられているので、そ
の部分の誘電体損が減少して電磁界が流れやすくなり、
この結果、導体2に流れる高周波電流が流れやすくなる
ので、共振素子としてのQが大きくなる。Here, when a high-frequency current flows through the conductor 2,
An electromagnetic field is generated around the conductor 2. However, since the insulator lacking portion 3 is provided along both side ends 2a of the conductor 2, the dielectric loss at that portion is reduced, so that the electromagnetic field easily flows. ,
As a result, a high-frequency current flowing through the conductor 2 easily flows, and thus Q as a resonance element increases.
【0016】ここで、導体2の線路上には、その長手方
向に従って電圧電流定在波が発生し、電流定在波の波腹
点で電流密度が最大となるので、上記の絶縁体欠如部3
は、この波腹点の近傍に設けても効果的である。例え
ば、図1に示すように、導体2の長さL1が電流定在波
の波長λの1/2(半波長)で両端が開放されている場
合には、導体2の中央部2dが電流定在波の波腹点とな
るので、この中央部2dの近傍に絶縁体欠如部3を設け
れば効果を得ることができる。この場合、図2に示すよ
うに、絶縁体欠如部3の長手方向の長さL2は、上述の
ように導体2の中央部2dが電流定在波の波腹点なの
で、導体2の中央部2dと導体2の一端2bとの間の長
さのほぼ1/2及び導体2の中央部2dと導体2の他端
2cとの間の長さのほぼ1/2に形成する。つまり、絶
縁体欠如部3の長手方向の長さL2を導体2の長手方向
の長さL1の1/2のほぼ半分の長さに形成することに
よって、最大電流密度の約50%の範囲をカバーするの
で、より効果を得ることができる。Here, a voltage / current standing wave is generated on the line of the conductor 2 in the longitudinal direction, and the current density becomes maximum at the antinode of the current standing wave. 3
Is also effective near this antinode. For example, as shown in FIG. 1, when the length L1 of the conductor 2 is の (half wavelength) of the wavelength λ of the current standing wave and both ends are open, the central portion 2d of the conductor 2 Since this becomes the antinode of the standing wave, the effect can be obtained by providing the insulator lacking portion 3 near the central portion 2d. In this case, as shown in FIG. 2, the length L2 of the insulator lacking portion 3 in the longitudinal direction is equal to the antinode of the current standing wave at the center 2d of the conductor 2 as described above. It is formed to be approximately 1/2 of the length between 2d and one end 2b of the conductor 2 and approximately 1/2 of the length between the center 2d of the conductor 2 and the other end 2c of the conductor 2. That is, by forming the length L2 of the insulator lacking portion 3 in the longitudinal direction to be approximately half the length L1 of the conductor 2 in the longitudinal direction, the range of about 50% of the maximum current density can be reduced. Since the cover is provided, more effects can be obtained.
【0017】また、例えば、図3に示すように、導体2
の長さL3が電流定在波の波長λの1/4で、導体2の
一端2bを開放した場合には電流定在波は導体2の一端
2bが電流定在波の波腹点となるので、この導体2の一
端2cの近傍に絶縁体欠如部3を設ければ効果を得るこ
とができる。この場合、図4に示すように、絶縁体欠如
部3の長手方向の長さL4を導体2の長手方向の長さL
3のほぼ1/2にすることによってより効果を得ること
ができる。なお、導体2の一端2bを短絡した場合に
は、電流定在波は導体2の他端2cが電流定在波の波腹
点となるので、この導体2の他端2cの近傍に、前述の
ように絶縁体欠如部3を形成することで、効果を得るこ
とができる。For example, as shown in FIG.
Is 1/4 of the wavelength λ of the current standing wave and one end 2b of the conductor 2 is opened, the current standing wave becomes an antinode of the current standing wave at the one end 2b of the conductor 2. Therefore, the effect can be obtained if the insulator lacking portion 3 is provided near the one end 2c of the conductor 2. In this case, as shown in FIG. 4, the length L4 of the insulator lacking portion 3 in the longitudinal direction is changed to the length L of the conductor 2 in the longitudinal direction.
More effect can be obtained by setting the ratio to approximately 1/2 of 3. When one end 2b of the conductor 2 is short-circuited, the other end 2c of the conductor 2 becomes an antinode of the current standing wave. By forming the insulator lacking portion 3 as described above, an effect can be obtained.
【0018】そして、絶縁体欠如部3は、図5に示すよ
うな底部3aを備えた穴を形成している。そして、絶縁
体欠如部3の深さDは、絶縁体欠如部3の幅W以上の長
さにするのが望ましい。このように、絶縁体欠如部3の
深さDを設定することで、導体2に高周波電流が流れた
ときに生じる電磁界による誘電体損を減らすようになっ
ている。なお、絶縁体欠如部3は上述のような深さDを
有する穴で形成したが、図6に示すように底部3aを有
さない貫通孔で形成しても良く、この場合においてはよ
り大きな効果を得ることができる。The insulator lacking portion 3 forms a hole having a bottom 3a as shown in FIG. It is desirable that the depth D of the insulator lacking portion 3 be equal to or greater than the width W of the insulator lacking portion 3. By setting the depth D of the insulator lacking portion 3 in this manner, dielectric loss due to an electromagnetic field generated when a high-frequency current flows through the conductor 2 is reduced. The insulator lacking portion 3 is formed by a hole having the depth D as described above, but may be formed by a through hole having no bottom 3a as shown in FIG. The effect can be obtained.
【0019】[0019]
【発明の効果】以上のように、本発明の第一の解決手段
として、絶縁基板の上面に設けられた帯状の導体からな
り、導体の長手方向の両側端に沿って絶縁基板を切り欠
いて形成した絶縁体欠如部を設けた構成としたことで、
電流密度が高い電流定在波の波腹点の近傍には、誘電体
損の原因となる絶縁基盤がないので、誘電体損が生じな
くなり、その結果、高周波電流が流れやすくなる。従っ
て、Qを大きく取ることができる。As described above, the first solution of the present invention is to form a strip-shaped conductor provided on the upper surface of an insulating substrate and cut off the insulating substrate along both longitudinal ends of the conductor. By adopting the configuration with the formed insulator missing part,
In the vicinity of the antinode of the current standing wave having a high current density, there is no insulating substrate that causes dielectric loss, so that dielectric loss does not occur, and as a result, high-frequency current flows easily. Therefore, Q can be made large.
【0020】また、本発明の第二の解決手段として、絶
縁体欠如部を、導体に発生する電流定在波の波腹点の近
傍に形成した構成としたことで、電流密度が最も高い電
流定在波の波腹点の近傍に絶縁基板がないので、誘電体
損が生じなくなり、その結果、高周波電流が流れやすく
なる。従って、Qを大きく取ることができる。Further, as a second solution of the present invention, the insulator lacking portion is formed near the antinode of the current standing wave generated in the conductor, so that the current density is the highest. Since there is no insulating substrate near the antinode of the standing wave, dielectric loss does not occur, and as a result, a high-frequency current flows easily. Therefore, Q can be made large.
【0021】また、本発明の第三の解決手段として、縁
体欠如部の長手方向の長さを電流定在波の波長における
波腹点と波節点との間の長さの1/2とした構成とした
ことで、電流密度が高い電流定在波の波腹点の近傍に
は、誘電体損の原因となる絶縁基盤がないので、誘電体
損が生じなくなり、その結果、高周波電流が流れやすく
なる。従って、Qを大きく取ることができる。As a third solution of the present invention, the length in the longitudinal direction of the edge-missing portion is set to 1/2 of the length between the antinode and the node at the wavelength of the current standing wave. With this configuration, there is no insulating base near the antinode of the current standing wave having a high current density, and no dielectric loss occurs.As a result, high-frequency current is reduced. Easy to flow. Therefore, Q can be made large.
【0022】また、本発明の第四の解決手段として、絶
縁体欠如部を溝で構成し、溝の深さを絶縁体欠如部の幅
とほぼ同じ又はそれ以上にした構成としたことで、最大
電流密度の約50%の範囲をカバーするので、より高周
波電流が流れやすくなる。Further, as a fourth solution of the present invention, the insulator lacking portion is constituted by a groove, and the depth of the groove is substantially equal to or greater than the width of the insulator lacking portion. Since a range of about 50% of the maximum current density is covered, a high-frequency current flows more easily.
【0023】また、本発明の第五の解決手段として、絶
縁体欠如部を、前記絶縁体を貫通する孔にした構成とし
たことで、より大きく誘電体損を減衰することができる
ので、高周波電流が流れやすくなる。Further, as a fifth solution of the present invention, since the insulator lacking portion is formed as a hole penetrating the insulator, the dielectric loss can be more greatly attenuated. Current flows more easily.
【図1】本発明のマイクロストリップラインの第一の実
施例の上面図である。FIG. 1 is a top view of a first embodiment of a microstrip line of the present invention.
【図2】本発明のマイクロストリップラインの第二の実
施例の上面図である。FIG. 2 is a top view of a second embodiment of the microstrip line of the present invention.
【図3】本発明のマイクロストリップラインの第三の実
施例の上面図である。FIG. 3 is a top view of a third embodiment of the microstrip line of the present invention.
【図4】本発明のマイクロストリップラインの第四の実
施例の上面図である。FIG. 4 is a top view of a fourth embodiment of the microstrip line of the present invention.
【図5】本発明の図1乃至図4の5−5部における要部
断面図である。FIG. 5 is a cross-sectional view of a main part of a part 5-5 in FIGS. 1 to 4 of the present invention.
【図6】本発明の図1乃至図4の他の要部断面図であ
る。FIG. 6 is a sectional view of another essential part of FIGS. 1 to 4 of the present invention.
【図7】従来のマイクロストリップラインの上面図であ
る。FIG. 7 is a top view of a conventional microstrip line.
1 絶縁基板 2 導体 2a 導体の長手方向の両側端 2b 導体の一端 2c 導体の他端 2d 導体の長手方向であって導体の一端からλ/4の
位置 3 絶縁体欠如部 3a 底部DESCRIPTION OF SYMBOLS 1 Insulating board 2 Conductor 2a Both ends in the longitudinal direction of a conductor 2b One end of a conductor 2c The other end of a conductor 2d Position of λ / 4 from one end of a conductor in the longitudinal direction of a conductor 3 Insulated part 3a Bottom part
Claims (5)
からなり、前記導体の長手方向の両側端に沿って前記絶
縁基板を切り欠いて形成した絶縁体欠如部を設けたこと
を特徴とするマイクロストリップライン。1. An insulator lacking portion formed of a strip-shaped conductor provided on an upper surface of an insulating substrate and formed by cutting the insulating substrate along both longitudinal ends of the conductor. Microstrip line.
る電流定在波の波腹点の近傍に形成したことを特徴とす
る請求項1記載のマイクロストリップライン。2. The microstrip line according to claim 1, wherein the insulator lacking portion is formed near an antinode of a current standing wave generated in the conductor.
記電流定在波の波長における波腹点と波節点との間の長
さの1/2としたことを特徴とする請求項1または請求
項2記載のマイクロストリップライン。3. The method according to claim 1, wherein the length of the insulator-deficient portion in the longitudinal direction is の of the length between the antinode and the node at the wavelength of the current standing wave. The microstrip line according to claim 1 or 2.
の深さを前記絶縁体欠如部の幅とほぼ同じ又はそれ以上
にしたことを特徴とする請求項1乃至請求項3記載のマ
イクロストリップライン。4. The insulator lacking portion is formed by a groove, and the depth of the groove is substantially equal to or greater than the width of the insulator lacking portion. Microstrip line.
する孔にしたことを特徴とする請求項1乃至請求項3記
載のマイクロストリップライン。5. The microstrip line according to claim 1, wherein the insulator lacking portion is a hole penetrating the insulator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11000548A JP2000201008A (en) | 1999-01-05 | 1999-01-05 | Microstrip line |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11000548A JP2000201008A (en) | 1999-01-05 | 1999-01-05 | Microstrip line |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000201008A true JP2000201008A (en) | 2000-07-18 |
Family
ID=11476790
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11000548A Withdrawn JP2000201008A (en) | 1999-01-05 | 1999-01-05 | Microstrip line |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000201008A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12272856B2 (en) | 2020-05-12 | 2025-04-08 | Murata Manufacturing Co., Ltd. | Multi-layer signal transmission line including a void of specified dimensions and method for manufacture |
-
1999
- 1999-01-05 JP JP11000548A patent/JP2000201008A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12272856B2 (en) | 2020-05-12 | 2025-04-08 | Murata Manufacturing Co., Ltd. | Multi-layer signal transmission line including a void of specified dimensions and method for manufacture |
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