JP2000208682A - Power module substrate and semiconductor device using this substrate - Google Patents
Power module substrate and semiconductor device using this substrateInfo
- Publication number
- JP2000208682A JP2000208682A JP11005135A JP513599A JP2000208682A JP 2000208682 A JP2000208682 A JP 2000208682A JP 11005135 A JP11005135 A JP 11005135A JP 513599 A JP513599 A JP 513599A JP 2000208682 A JP2000208682 A JP 2000208682A
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- ceramic substrate
- water
- hole
- cooled heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
(57)【要約】
【課題】セラミック基板を損傷させることなく半導体素
子等から水冷式ヒートシンクまでの熱の伝達経路を短く
して半導体素子からの熱を有効に放散する。
【解決手段】パワーモジュール用基板は、表面に回路パ
ターン１１ａが形成されかつ複数の貫通孔１１ｂが形成
されたセラミック基板１１と、貫通孔に遊挿され通孔１
６ｃを有する管状部１６ａとセラミック基板の上面に対
向する環状の押え部１６ｂが一体的に形成されたカラー
１６と、押え部とセラミック基板の上面との間に介装す
る環状の弾性フランジ部１７ｂと管状部に嵌入しかつ貫
通孔に挿入する弾性筒部１７ａが一体的に形成された弾
性体１７とを備える。半導体装置は、回路パターンに半
導体素子２３が搭載され、カラーの通孔に雄ねじ２６が
挿通され、雄ねじを水冷式ヒートシンク２７の雌ねじ２
７ａに螺合することによりパワーモジュール用基板が水
冷式ヒートシンク２７に直接接合される。
(57) Abstract: A heat transfer path from a semiconductor element or the like to a water-cooled heat sink is shortened without damaging a ceramic substrate to effectively dissipate heat from the semiconductor element. A power module substrate includes a ceramic substrate having a circuit pattern formed on a surface thereof and a plurality of through holes formed therein, and a through hole loosely inserted into the through hole.
A collar 16 integrally formed with a tubular portion 16a having an upper surface 6c and an annular pressing portion 16b facing the upper surface of the ceramic substrate, and an annular elastic flange portion 17b interposed between the pressing portion and the upper surface of the ceramic substrate And an elastic body 17 integrally formed with an elastic tubular portion 17a fitted into the tubular portion and inserted into the through hole. In the semiconductor device, the semiconductor element 23 is mounted on the circuit pattern, the male screw 26 is inserted into the through hole of the collar, and the male screw is connected to the female screw 2 of the water-cooled heat sink 27.
The power module substrate is directly joined to the water-cooled heat sink 27 by being screwed into 7a.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、熱を放散するパワ
ーモジュールに使用されるパワーモジュール用基板及び
この基板を用いた半導体装置に関する。更に詳しくは、
雄ねじにより水冷式ヒートシンクに直接接合するように
構成されたパワーモジュール用基板及びこの基板を用い
た半導体装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power module substrate used for a power module that dissipates heat and a semiconductor device using the substrate. More specifically,
The present invention relates to a power module substrate configured to be directly joined to a water-cooled heat sink by a male screw and a semiconductor device using the substrate.
【０００２】[0002]
【従来の技術】この種のパワーモジュール用基板とし
て、図９に示すように、セラミック基板１がＡｌＮによ
り形成され、このセラミック基板１の両面に第１及び第
２銅板２，３が積層接着され、Ｃｕにより形成されたヒ
ートシンク４の上面にＮｉめっきが形成され、更にヒー
トシンク４が第２銅板３にはんだ６を介して積層接着さ
れたものが知られている。この基板に半導体素子７が搭
載された半導体装置では発熱量が比較的多いため、内部
に冷却水８ａを循環させることにより強制的に熱を外部
に伝達する水冷式ヒートシンク８に接合される。パワー
モジュール用基板の水冷式ヒートシンク８への接合はヒ
ートシンク４に取付孔４ａを形成してこの取付孔４ａに
雄ねじ９を挿通し、この雄ねじ９を水冷式ヒートシンク
８に形成された雌ねじ８ｂに螺合することにより行う。
このように接合された半導体装置では、半導体素子等が
発した熱は第１銅板２、セラミック基板１、第２銅板
３、はんだ６及びヒートシンク４を介して水冷式ヒート
シンク８により外部に放散されるようになっている。2. Description of the Related Art As a power module substrate of this type, as shown in FIG. 9, a ceramic substrate 1 is formed of AlN, and first and second copper plates 2 and 3 are laminated and bonded to both surfaces of the ceramic substrate 1. A heat sink 4 is known in which Ni plating is formed on the upper surface of a heat sink 4 made of Cu, and the heat sink 4 is further laminated and bonded to a second copper plate 3 via solder 6. Since the semiconductor device in which the semiconductor element 7 is mounted on this substrate generates a relatively large amount of heat, the semiconductor device 7 is joined to the water-cooled heat sink 8 that forcibly transmits heat by circulating the cooling water 8a inside. For joining the power module substrate to the water-cooled heat sink 8, a mounting hole 4 a is formed in the heat sink 4, a male screw 9 is inserted into the mounting hole 4 a, and the male screw 9 is screwed into a female screw 8 b formed on the water-cooled heat sink 8. It is performed by combining.
In the semiconductor device thus joined, heat generated by the semiconductor element and the like is radiated to the outside by the water-cooled heat sink 8 via the first copper plate 2, the ceramic substrate 1, the second copper plate 3, the solder 6, and the heat sink 4. It has become.
【０００３】[0003]
【発明が解決しようとする課題】しかし、上記従来の半
導体装置では、半導体素子等７から水冷式ヒートシンク
８までの熱の伝達経路が比較的長く、特に熱伝導率の低
いはんだ６を介してヒートシンク８に第２銅板３を積層
接着することに起因して半導体素子７からの発熱を有効
に水冷式ヒートシンク８まで伝達して放散させることが
できない不具合がある。この点を解消するために、図８
に示すように、取付孔１ａを形成した後焼成してセラミ
ック基板１に直接取付孔１ａを形成し、この取付孔１ａ
に雄ねじ９を挿通して水冷式ヒートシンク８に形成され
た雌ねじ８ｂに螺合して接合し、半導体素子７から水冷
式ヒートシンク８までの熱の伝達経路を短くすることが
考えられる。しかし、取付孔１ａを形成した後セラミッ
ク基板１を焼成することは、焼成時における収縮から取
付孔１ａのピッチを正確に出せない問題点がある。ま
た、セラミック基板１のもろさから水冷式ヒートシンク
８に接合する際の雄ねじ９の締結力によりセラミック基
板１に亀裂が入るおそれもある。更に、セラミック基板
１をヒートシンク８に取付けた半導体装置の使用時の熱
によるセラミック基板１とヒートシンク８との膨張係数
の差に起因するセラミック基板１の破損を防止する必要
もある。However, in the above-described conventional semiconductor device, the heat transfer path from the semiconductor element 7 to the water-cooled heat sink 8 is relatively long, and the heat sink is particularly provided via the solder 6 having a low thermal conductivity. There is a problem that heat generated from the semiconductor element 7 cannot be effectively transmitted to the water-cooled heat sink 8 and dissipated due to the lamination and bonding of the second copper plate 3 to the second copper plate 8. In order to solve this point, FIG.
As shown in FIG. 1, after the formation of the mounting hole 1a, firing is performed to directly form the mounting hole 1a in the ceramic substrate 1, and the mounting hole 1a is formed.
It is conceivable to insert a male screw 9 into the female screw 8b formed on the water-cooled heat sink 8 and join it together to shorten the heat transfer path from the semiconductor element 7 to the water-cooled heat sink 8. However, firing the ceramic substrate 1 after forming the mounting holes 1a has a problem in that the pitch of the mounting holes 1a cannot be accurately determined due to shrinkage during firing. In addition, the ceramic substrate 1 may be cracked by the fastening force of the male screw 9 when joining the water-cooled heat sink 8 from the fragility of the ceramic substrate 1. Further, it is necessary to prevent the ceramic substrate 1 from being damaged due to a difference in expansion coefficient between the ceramic substrate 1 and the heat sink 8 due to heat during use of the semiconductor device having the ceramic substrate 1 attached to the heat sink 8.
【０００４】本発明の目的は、セラミック基板を損傷さ
せることなく半導体素子から水冷式ヒートシンクまでの
熱の伝達経路を短くして半導体素子からの熱を有効に放
散し得るパワーモジュール用基板及びこの基板を用いた
半導体装置を提供することにある。本発明の別の目的
は、セラミック基板とヒートシンクとの膨張係数の差に
起因するセラミック基板の破損を防止し得るパワーモジ
ュール用基板及びこの基板を用いた半導体装置を提供す
ることにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a power module substrate capable of effectively dissipating heat from a semiconductor element by shortening a heat transfer path from a semiconductor element to a water-cooled heat sink without damaging a ceramic substrate. And a semiconductor device using the same. Another object of the present invention is to provide a power module substrate capable of preventing the ceramic substrate from being damaged due to a difference in expansion coefficient between the ceramic substrate and the heat sink, and a semiconductor device using the substrate.
【０００５】[0005]
【課題を解決するための手段】請求項１に係る発明は、
図１に示すように、表面に回路パターン１１ａが形成さ
れかつ複数の貫通孔１１ｂが形成されたセラミック基板
１１と、貫通孔１１ｂに遊挿され通孔１６ｃを有する管
状部１６ａとセラミック基板１１の上面に対向する環状
の押え部１６ｂが一体的に形成されたカラー１６と、押
え部１６ｂとセラミック基板１１の上面との間に介装す
る環状の弾性フランジ部１７ｂと管状部１６ａに嵌入し
かつ貫通孔１１ｂに挿入する弾性筒部１７ａが一体的に
形成された弾性体１７とを備え、通孔１６ｃに雄ねじ２
６を挿通して雄ねじ２６を水冷式ヒートシンク２７に形
成された雌ねじ２７ａ又は水冷式ヒートシンク２７に貫
通して形成された取付孔２７ｃに更に挿通してナット３
１に螺合し、セラミック基板１１を水冷式ヒートシンク
２７に接合するように構成されたパワーモジュール用基
板である。The invention according to claim 1 is
As shown in FIG. 1, a ceramic substrate 11 having a circuit pattern 11a formed on a surface thereof and a plurality of through holes 11b formed therein, a tubular portion 16a having a through hole 16c loosely inserted into the through hole 11b, and a ceramic substrate 11 are provided. A collar 16 integrally formed with an annular pressing portion 16b facing the upper surface, an annular elastic flange portion 17b and a tubular portion 16a interposed between the pressing portion 16b and the upper surface of the ceramic substrate 11; An elastic body 17 integrally formed with an elastic cylindrical portion 17a to be inserted into the through hole 11b;
6 and the male screw 26 is further inserted into the female screw 27 a formed in the water-cooled heat sink 27 or the mounting hole 27 c formed through the water-cooled heat sink 27, and the nut 3 is inserted.
1 is a power module substrate configured to be screwed to the substrate 1 and to join the ceramic substrate 11 to the water-cooled heat sink 27.
【０００６】請求項２に係る発明は、図３に示すよう
に、表面に回路パターン１１ａが形成されかつ複数の貫
通孔１１ｂが形成されたセラミック基板１１と、貫通孔
１１ｂに挿入され挿通孔１７ｃを有する弾性筒部１７ａ
とセラミック基板１１の上面に当接する環状の弾性フラ
ンジ部１７ｂが一体的に形成された弾性体１７と、挿通
孔１７ｃに連通する連通孔１８ａを有しかつ弾性フラン
ジ部１７ｂを介してセラミック基板１１の上面に配置さ
れたワッシャ１８とを備え、連通孔１８ａに挿通された
雄ねじ２６を挿通孔１７ｃに挿通して水冷式ヒートシン
ク２７に形成された雌ねじ２７ａ又は水冷式ヒートシン
ク２７に貫通して形成された取付孔２７ｃに更に挿通し
てナット３１に螺合し、セラミック基板１１を水冷式ヒ
ートシンク２７に接合するように構成されたパワーモジ
ュール用基板である。As shown in FIG. 3, a second aspect of the present invention provides a ceramic substrate 11 having a circuit pattern 11a formed on a surface thereof and a plurality of through holes 11b formed therein, and an insertion hole 17c inserted into the through hole 11b. Elastic cylindrical portion 17a having
And an elastic body 17 integrally formed with an annular elastic flange portion 17b abutting on the upper surface of the ceramic substrate 11, and a communication hole 18a communicating with the insertion hole 17c, and the ceramic substrate 11 is provided through the elastic flange portion 17b. And a washer 18 disposed on the upper surface of the water-cooled heat sink 27 and a female screw 27a formed on the water-cooled heat sink 27 by passing the male screw 26 inserted through the communication hole 18a into the insertion hole 17c. This is a power module substrate configured to be further inserted into the mounting hole 27 c and screwed to the nut 31 to join the ceramic substrate 11 to the water-cooled heat sink 27.
【０００７】請求項１又は２に係るパワーモジュール用
基板では、セラミック基板１１の貫通孔１１ｂと水冷式
ヒートシンク２７の雌ねじ２７ａ又は取付孔との間に取
付誤差がある場合には、この取付誤差を弾性体１７の弾
性により吸収する。また、弾性体１７は、使用時の温度
変化による膨張又は収縮により生じるセラミック基板１
１と水冷式ヒートシンク２７との間の取付誤差をその弾
性により吸収して熱膨張係数の相違に起因するセラミッ
ク基板１１の破損を防止する。In the power module substrate according to the first or second aspect, if there is a mounting error between the through hole 11b of the ceramic substrate 11 and the female screw 27a or the mounting hole of the water-cooled heat sink 27, the mounting error is reduced. It is absorbed by the elasticity of the elastic body 17. In addition, the elastic body 17 is a ceramic substrate 1 generated by expansion or contraction due to a temperature change during use.
The mounting error between the heat sink 1 and the water-cooled heat sink 27 is absorbed by its elasticity to prevent the ceramic substrate 11 from being damaged due to a difference in thermal expansion coefficient.
【０００８】また、弾性体１７を介してセラミック基板
１１に設けられたカラー１６又はワッシャ１８を使用し
て雄ねじ２６によりこのセラミック基板１１を水冷式ヒ
ートシンク２７に接合するので、雄ねじ２６の締結力が
セラミック基板１１に直接加わることはなく、雄ねじ２
６の締結力に起因するセラミック基板１１の破損を防止
して、回路パターン１１ａに搭載された半導体素子２３
からの熱を水冷式ヒートシンク２７に有効に伝達する。
なお、セラミック基板１１はＡｌＮ，Ｓｉ3Ｎ4又はＡｌ
2Ｏ3により形成することが好ましい。セラミック基板１
１としてＡｌＮを用いると熱伝導率及び耐熱性が向上
し、Ｓｉ3Ｎ4を用いると強度及び耐熱性が向上し、Ａｌ
2Ｏ3を用いると耐熱性が向上する。Further, since the ceramic substrate 11 is joined to the water-cooled heat sink 27 by the male screw 26 using the collar 16 or the washer 18 provided on the ceramic substrate 11 via the elastic body 17, the fastening force of the male screw 26 is reduced. It does not directly apply to the ceramic substrate 11,
6 to prevent the ceramic substrate 11 from being damaged due to the fastening force, and the semiconductor element 23 mounted on the circuit pattern 11a.
Is effectively transmitted to the water-cooled heat sink 27.
The ceramic substrate 11 is made of AlN, Si 3 N 4 or Al.
It is preferably formed of 2 O 3 . Ceramic substrate 1
When AlN is used as 1, thermal conductivity and heat resistance are improved, and when Si 3 N 4 is used, strength and heat resistance are improved.
The use of 2 O 3 improves heat resistance.
【０００９】請求項３に係る発明は、図７に示すよう
に、請求項１又は２記載のパワーモジュール用基板１
０，２０の回路パターン１１ａに半導体素子２３が搭載
され、パワーモジュール用基板１０，２０の表面に端子
２４が内周面に設けられた枠部材２５が半導体素子２３
を包囲するように接着され、端子２４と半導体素子２３
とが接続されて絶縁性ゲル２９が充填され、枠部材２５
の上面に蓋板２５ａが接着され、請求項１記載のカラー
１６の通孔１６ｃ又は請求項２記載のワッシャ１８及び
弾性体１７の連通孔１８ａ及び挿通孔１７ｃに雄ねじ２
６が挿通され、雄ねじ２６を水冷式ヒートシンク２７に
形成された雌ねじ２７ａ又は水冷式ヒートシンク２７に
貫通して形成された取付孔に更に挿通してナットに螺合
することによりパワーモジュール用基板１０，２０が水
冷式ヒートシンク２７に直接接合された半導体装置であ
る。この請求項３に係る発明では、水冷式ヒートシンク
２７に直接接合されたパワーモジュール用基板１０，２
０の回路パターン１１ａに搭載された半導体素子２３か
ら水冷式ヒートシンク２７までの熱の伝達経路は、図９
に示す従来の熱の伝達経路より短く、半導体素子２３か
らの熱は従来に比較してより有効に水冷式ヒートシンク
２７に伝達されて外部に放散される。According to a third aspect of the present invention, as shown in FIG. 7, the power module substrate 1 according to the first or second aspect is provided.
The semiconductor element 23 is mounted on the circuit patterns 11a of the power module substrates 0 and 20, and the frame member 25 having the terminals 24 provided on the inner peripheral surface of the power module substrates 10 and 20 is formed by the semiconductor element 23.
Are bonded so as to surround the terminal 24 and the semiconductor element 23.
Are connected to each other, the insulating gel 29 is filled, and the frame member 25 is
A cover plate 25a is adhered to the upper surface of the second member, and a male screw 2 is inserted into the through hole 16c of the collar 16 according to claim 1 or the communication hole 18a and the insertion hole 17c of the washer 18 and the elastic body 17 according to claim 2.
6 is inserted, and the male screw 26 is further inserted into a female screw 27 a formed in the water-cooled heat sink 27 or a mounting hole formed through the water-cooled heat sink 27 and screwed into a nut, whereby the power module substrate 10, Reference numeral 20 denotes a semiconductor device directly joined to the water-cooled heat sink 27. According to the third aspect of the present invention, the power module substrates 10 and 2 directly joined to the water-cooled heat sink 27 are provided.
The heat transfer path from the semiconductor element 23 mounted on the circuit pattern 11a of No. 0 to the water-cooled heat sink 27 is shown in FIG.
, The heat from the semiconductor element 23 is more effectively transmitted to the water-cooled heat sink 27 and dissipated to the outside than in the conventional case.
【００１０】[0010]
【発明の実施の形態】次に本発明のパワーモジュール用
基板における第１の実施の形態を図面に基づいて詳しく
説明する。図１に示すように、パワーモジュール用基板
１０は表面に回路パターン１１ａが形成されかつ複数の
貫通孔１１ｂが形成されたセラミック基板１１を備え
る。貫通孔１１ｂはセラミック基板１１の焼成前に形成
され、回路パターン１１ａはセラミック基板１１に接着
された図示しない金属箔をエッチング加工することによ
り作られる。セラミック基板１１への金属箔の接着は、
金属箔がＣｕにより形成され、セラミック基板１１がＡ
ｌ2Ｏ3により形成される場合には、セラミック基板１１
及び金属箔との間にろう材であるＡｇ−Ｃｕ−Ｔｉろう
材の箔を挟んだ状態で重ね合せ、これらに荷重０．５〜
２ｋｇｆ／ｃｍ2を加え、真空中で８００〜９００℃に
加熱する活性金属法により行われる。金属箔がＣｕによ
り形成され、セラミック基板１１がＡｌＮにより形成さ
れる場合も上記と同様の活性金属法によりセラミック基
板１１に金属箔が接着される。Next, a first embodiment of the power module substrate of the present invention will be described in detail with reference to the drawings. As shown in FIG. 1, the power module substrate 10 includes a ceramic substrate 11 having a surface on which a circuit pattern 11a is formed and a plurality of through holes 11b. The through hole 11b is formed before the ceramic substrate 11 is fired, and the circuit pattern 11a is formed by etching a metal foil (not shown) adhered to the ceramic substrate 11. The adhesion of the metal foil to the ceramic substrate 11 is as follows.
The metal foil is formed of Cu, and the ceramic substrate 11 is made of A
When formed of l 2 O 3 , the ceramic substrate 11
And a foil of Ag-Cu-Ti brazing material, which is a brazing material, is sandwiched between the brazing material and a metal foil, and a load of 0.5 to
It is performed by an active metal method in which 2 kgf / cm 2 is added and heated to 800 to 900 ° C. in a vacuum. When the metal foil is formed of Cu and the ceramic substrate 11 is formed of AlN, the metal foil is bonded to the ceramic substrate 11 by the same active metal method as described above.
【００１１】また、金属箔がＡｌにより形成され、セラ
ミック基板１１がＡｌ2Ｏ3又はＡｌＮにより形成される
場合には、金属箔はＡｌ純度が９９．９８重量％以上で
あって、融点が６６０℃のものが使用される。金属箔は
この金属箔より融点が低いＡｌ−Ｓｉ系ろう材を介して
積層接着される。即ち、Ａｌ−Ｓｉ系ろう材は８５〜９
５重量％のＡｌと５〜１５重量％のＳｉを含み、このろ
う材１６の溶解温度範囲は５７０〜６３０℃である。積
層接着はセラミック基板１１と金属箔との間にろう材で
あるＡｌ−Ｓｉろう材の箔を挟んだ状態でこれらに荷重
０．５〜２ｋｇｆ／ｃｍ2を加え、真空中で６００〜６
５０℃に加熱することにより、金属箔がセラミック基板
１１に接着される。このようにセラミック基板１１に接
着された金属箔はエッチング加工されて回路パターン１
１ａが作られる。When the metal foil is made of Al and the ceramic substrate 11 is made of Al 2 O 3 or AlN, the metal foil has an Al purity of 99.98% by weight or more and a melting point of 660. ° C is used. The metal foil is laminated and bonded via an Al-Si brazing material having a lower melting point than the metal foil. That is, the Al-Si-based brazing material is 85-9.
It contains 5% by weight of Al and 5 to 15% by weight of Si. The melting temperature range of the brazing material 16 is 570 to 630 ° C. Lamination bonding is performed by applying a load of 0.5 to 2 kgf / cm 2 to a ceramic substrate 11 and a metal foil with a foil of an Al—Si brazing material sandwiched between the ceramic substrate 11 and the metal foil, and applying a load of 600 to 6 kg in a vacuum.
By heating to 50 ° C., the metal foil is bonded to the ceramic substrate 11. The metal foil adhered to the ceramic substrate 11 is etched to form the circuit pattern 1.
1a is made.
【００１２】図１及び図２に示すように、パワーモジュ
ール用基板１０はカラー１６と弾性体１７とを備える。
カラー１６は貫通孔１１ｂに遊挿可能な外径を有する管
状部１６ａとセラミック基板１１の上面に対向する環状
の押え部１６ｂが一体的に形成され、このカラー１６に
はその押え部１６ｂ及び管状部１６ａに貫通して通孔１
６ｃが形成される。弾性体１７は弾性を有する合成ゴム
を切削又は成形加工することにより作られ、押え部１６
ｂとセラミック基板１１の上面との間に介装する環状の
弾性フランジ部１７ｂとカラーの管状部１６ａに嵌入し
かつセラミック基板の貫通孔１１ｂに挿入する弾性筒部
１７ａが一体的に形成される。この弾性体１７は、管状
部１６ａに嵌入した状態でカラー１６とともに貫通孔１
１ｂに挿入することにより弾性フランジ部１７ｂが押え
部１６ｂとセラミック基板１１の上面との間に介装され
る。As shown in FIGS. 1 and 2, the power module substrate 10 includes a collar 16 and an elastic body 17.
The collar 16 is formed integrally with a tubular portion 16a having an outer diameter that can be loosely inserted into the through hole 11b and an annular holding portion 16b facing the upper surface of the ceramic substrate 11, and the collar 16 has the holding portion 16b and the tubular portion 16b. Through hole 1 penetrating through portion 16a
6c is formed. The elastic body 17 is made by cutting or molding an elastic synthetic rubber.
b and the upper surface of the ceramic substrate 11 are integrally formed with an annular elastic flange portion 17b and an elastic cylindrical portion 17a fitted into the collar tubular portion 16a and inserted into the through hole 11b of the ceramic substrate. . The elastic body 17 is inserted into the through-hole 1 together with the collar 16 in a state fitted in the tubular portion 16a.
The elastic flange portion 17b is interposed between the holding portion 16b and the upper surface of the ceramic substrate 11 by inserting the elastic flange portion 17b into the ceramic substrate 11.
【００１３】なお、このパワーモジュール用基板１０
は、カラー１６の通孔１６ｃに雄ねじ２６を挿通してこ
の雄ねじ２６を水冷式ヒートシンク２７に形成された雌
ねじ２７ａ、又は図６に示す水冷式ヒートシンク２７に
貫通して形成された取付孔２７ｃに更に挿通してナット
３１に螺合することにより、セラミック基板１１を水冷
式ヒートシンク２７に接合するように構成される。雌ね
じ２７ａ又は取付孔２７ｃはセラミック基板１１に形成
された貫通孔１１ｂのピッチ寸法と同一のピッチ寸法で
形成されるが、セラミック基板１１の焼成時における収
縮によりその貫通孔１１ｂと雌ねじ２７ａ又は取付孔２
７ｃとの間に取付誤差が生じた場合には、弾性体１７の
弾性によりこの取付誤差を吸収する。The power module substrate 10
The male screw 26 is inserted into the through hole 16c of the collar 16 and the male screw 26 is inserted into the female screw 27a formed in the water-cooled heat sink 27 or the mounting hole 27c formed through the water-cooled heat sink 27 shown in FIG. Further, the ceramic substrate 11 is joined to the water-cooled heat sink 27 by being inserted and screwed to the nut 31. The female screw 27a or the mounting hole 27c is formed with the same pitch size as the pitch size of the through hole 11b formed in the ceramic substrate 11, but the through hole 11b and the female screw 27a or the mounting hole are shrunk during firing of the ceramic substrate 11. 2
If a mounting error occurs between the mounting member 7c and the mounting member 7c, the mounting error is absorbed by the elasticity of the elastic body 17.
【００１４】即ち、貫通孔１１ｂにはカラー１６の管状
部１６ａに嵌入した弾性体１７の弾性筒部１７ａが挿入
され、雄ねじ２６はそのカラー１６の通孔１６ｃに挿通
される。このため、雄ねじ２６が螺合又は挿通するヒー
トシンク２７の雌ねじ２７ａ又は取付孔２７ｃより貫通
孔１１ｂは比較的大きく形成される。従って、貫通孔１
１ｂと雌ねじ２７ａ又は取付孔２７ｃとの間に取付誤差
が生じても、弾性体１７が弾性変形して貫通孔１１ｂの
範囲内でカラー１６の移動を許容し、カラー１６に挿通
された雄ねじ２６を雌ねじ２７ａ又は取付孔２７ｃに螺
合又は挿通させる。このため、セラミック基板１１を水
冷式ヒートシンク２７に確実に接合することができる。That is, the elastic cylindrical portion 17a of the elastic body 17 fitted into the tubular portion 16a of the collar 16 is inserted into the through hole 11b, and the male screw 26 is inserted into the through hole 16c of the collar 16. For this reason, the through hole 11b is formed relatively larger than the female screw 27a or the mounting hole 27c of the heat sink 27 into which the male screw 26 is screwed or inserted. Therefore, the through hole 1
Even if a mounting error occurs between the female screw 1b and the female screw 27a or the mounting hole 27c, the elastic body 17 is elastically deformed to allow the movement of the collar 16 within the range of the through hole 11b. Into the female screw 27a or the mounting hole 27c. Therefore, the ceramic substrate 11 can be securely joined to the water-cooled heat sink 27.
【００１５】このパワーモジュール用基板１０では、上
述のように貫通孔１１ｂを使用して雄ねじ２６によりセ
ラミック基板１１が水冷式ヒートシンク２７に接合され
るけれども、雄ねじ２６の締結力はカラー１６の押え部
１６ｂに加わり、その締結力がセラミック基板１１に直
接加わることはない。このため、雄ねじ２６の締結力に
起因してセラミック基板１１が破損することはなく、回
路パターン１１ａに搭載された半導体素子からの熱は水
冷式ヒートシンク２７に有効に伝達される。また、半導
体素子２３からの熱が伝達されることにより、セラミッ
ク基板１１及び水冷式ヒートシンク２７自体の温度は上
昇してそれぞれが膨張する。ここでセラミック基板１１
の熱膨張係数は金属により作られた水冷式ヒートシンク
２７の熱膨張係数より一般的に低いため、雌ねじ２７ａ
に螺合された雄ねじ２６の間隔は貫通孔１１ｂの間隔よ
り広がるけれども、その雄ねじ２６の間隔の広がりを弾
性体１７がその弾性により吸収して許容する。即ち、弾
性体１７は膨張又は収縮により生じるセラミック基板１
１と水冷式ヒートシンク２７との取付誤差をその弾性に
より吸収し、温度変化に起因するセラミック基板１１の
破損を防止する。In the power module substrate 10, the ceramic substrate 11 is joined to the water-cooled heat sink 27 by the male screw 26 using the through hole 11b as described above, but the fastening force of the male screw 26 is 16b, and the fastening force is not directly applied to the ceramic substrate 11. Therefore, the ceramic substrate 11 is not damaged due to the fastening force of the male screw 26, and heat from the semiconductor element mounted on the circuit pattern 11a is effectively transmitted to the water-cooled heat sink 27. In addition, when the heat is transmitted from the semiconductor element 23, the temperatures of the ceramic substrate 11 and the water-cooled heat sink 27 themselves rise and each expands. Here, the ceramic substrate 11
Is generally lower than the thermal expansion coefficient of a water-cooled heat sink 27 made of metal,
Although the interval between the external threads 26 screwed into the hole is wider than the interval between the through holes 11b, the expansion of the interval between the external threads 26 is allowed by the elastic body 17 due to its elasticity. That is, the elastic body 17 is a ceramic substrate 1 generated by expansion or contraction.
The elasticity absorbs the mounting error between the heat sink 1 and the water-cooled heat sink 27, thereby preventing the ceramic substrate 11 from being damaged due to a temperature change.
【００１６】図３及び図４に本発明のパワーモジュール
用基板における第２の実施の形態を説明する。図面中上
述した実施の形態と同一符号は同一部品を示し繰返して
の説明を省略する。図３に示すように、第２の実施の形
態におけるパワーモジュール用基板２０は、表面に回路
パターン１１ａが形成されかつ複数の貫通孔１１ｂが形
成されたセラミック基板１１と、弾性体１７と、ワッシ
ャ１８とを備える。弾性体１７は、セラミック基板１１
の貫通孔１１ｂに挿入可能な外径を有する弾性筒部１７
ａとセラミック基板１１の上面に当接する環状の弾性フ
ランジ部１７ｂが一体的に形成され、この弾性体１７に
はその弾性筒部１７ａ及び弾性フランジ部１７ｂを貫通
して挿通孔１７ｃが形成される。ワッシャ１８には挿通
孔１７ｃに連通する連通孔１８ａが形成され、ワッシャ
１８は弾性フランジ部１７ｂを介してセラミック基板１
１の上面に配置される。FIGS. 3 and 4 show a power module substrate according to a second embodiment of the present invention. In the drawings, the same reference numerals as those in the above-described embodiment denote the same parts, and a description thereof will not be repeated. As shown in FIG. 3, a power module substrate 20 according to the second embodiment includes a ceramic substrate 11 having a circuit pattern 11a formed on a surface thereof and a plurality of through holes 11b, an elastic body 17, and a washer. 18. The elastic body 17 is formed on the ceramic substrate 11.
Elastic cylinder portion 17 having an outer diameter that can be inserted into through hole 11b
and an annular elastic flange portion 17b abutting on the upper surface of the ceramic substrate 11 is integrally formed, and an insertion hole 17c is formed in the elastic body 17 through the elastic cylindrical portion 17a and the elastic flange portion 17b. . The washer 18 is formed with a communication hole 18a communicating with the insertion hole 17c, and the washer 18 is connected to the ceramic substrate 1 via an elastic flange portion 17b.
1 is arranged on the upper surface.
【００１７】このパワーモジュール用基板２０は、ワッ
シャ１８の連通孔１８ａに挿通された雄ねじ２６を弾性
体１７の挿通孔１７ｃに遊挿し、この雄ねじ２６を水冷
式ヒートシンク２７に形成された雌ねじ２７ａ又は水冷
式ヒートシンク２７に貫通して形成された取付孔２７ｃ
に更に挿通してナット３１に螺合することにより、セラ
ミック基板１１を水冷式ヒートシンク２７に接合するよ
うに構成される。弾性体１７は弾性変形するので、貫通
孔１１ｂと雌ねじ２７ａ又は取付孔２７ｃとの間に取付
誤差が生じても、弾性体１７は貫通孔１１ｂの範囲内で
雄ねじ２６の移動を許容し、弾性体１７の挿通孔１７ｃ
挿通された雄ねじ２６を雌ねじ２７ａ又は取付孔２７ｃ
に螺合又は挿通させる。このため、セラミック基板１１
を水冷式ヒートシンク２７に確実に接合することができ
る。In the power module substrate 20, the male screw 26 inserted into the communication hole 18a of the washer 18 is loosely inserted into the insertion hole 17c of the elastic body 17, and the male screw 26 is inserted into the female screw 27a formed in the water-cooled heat sink 27 or Mounting hole 27c formed through water-cooled heat sink 27
Is further screwed into the nut 31 to join the ceramic substrate 11 to the water-cooled heat sink 27. Since the elastic body 17 is elastically deformed, even if a mounting error occurs between the through hole 11b and the female screw 27a or the mounting hole 27c, the elastic body 17 allows the male screw 26 to move within the range of the through hole 11b, Insertion hole 17c of body 17
Insert the inserted male screw 26 into the female screw 27a or the mounting hole 27c.
Screwed or inserted. Therefore, the ceramic substrate 11
Can be securely joined to the water-cooled heat sink 27.
【００１８】このパワーモジュール用基板２０では、連
通孔１８ａ及び挿通孔１７ｃを使用して雄ねじ２６によ
りセラミック基板１１が水冷式ヒートシンク２７に接合
されるけれども、雄ねじ２６の締結力はワッシャ１８に
加わり、その締結力がセラミック基板１１に直接加わる
ことはない。このため、雄ねじ２６の締結力に起因して
セラミック基板１１が破損することはなく、回路パター
ン１１ａに搭載された半導体素子からの熱は水冷式ヒー
トシンク２７に有効に伝達される。また、半導体素子か
らの熱が伝達してセラミック基板１１及び水冷式ヒート
シンク２７自体がそれぞれが膨張し、雄ねじ２６の間隔
は挿通孔１７ｃの間隔より広がっても、その雄ねじ２６
の間隔の広がりを弾性体１７がその弾性により吸収し
て、温度変化に起因するセラミック基板１１の破損を防
止する。In the power module substrate 20, the ceramic substrate 11 is joined to the water-cooled heat sink 27 by the male screw 26 using the communication hole 18a and the insertion hole 17c, but the fastening force of the male screw 26 is applied to the washer 18. The fastening force is not directly applied to the ceramic substrate 11. Therefore, the ceramic substrate 11 is not damaged by the fastening force of the male screw 26, and heat from the semiconductor element mounted on the circuit pattern 11a is effectively transmitted to the water-cooled heat sink 27. Further, even if the heat from the semiconductor element is transmitted, the ceramic substrate 11 and the water-cooled heat sink 27 themselves expand, and even if the interval between the external threads 26 is wider than the interval between the insertion holes 17c, the external threads 26
The expansion of the interval is absorbed by the elastic body 17 by its elasticity, thereby preventing the ceramic substrate 11 from being damaged due to a temperature change.
【００１９】なお、上述した実施の形態では貫通孔１１
ｂ近傍におけるセラミック基板１１の上面に回路パター
ン１１ａを形成していないが、図５に示すように、回路
パターン１１ａが形成された部分に貫通孔１１ｂを形成
しても良い。この場合弾性フランジ部１７ｂは回路パタ
ーン１１ａを介してセラミック基板１１に当接する。ま
た、上述した実施の形態では貫通孔１１ｂをセラミック
基板１１の焼成前に形成したが、セラミック基板１１が
破損しない限り、焼成後のセラミック基板１１に精密加
工を施して貫通孔１１ａを形成しても良い。In the embodiment described above, the through holes 11
Although the circuit pattern 11a is not formed on the upper surface of the ceramic substrate 11 in the vicinity of b, a through hole 11b may be formed in a portion where the circuit pattern 11a is formed as shown in FIG. In this case, the elastic flange portion 17b contacts the ceramic substrate 11 via the circuit pattern 11a. In the above-described embodiment, the through-holes 11b are formed before the firing of the ceramic substrate 11. However, as long as the ceramic substrate 11 is not damaged, precision processing is performed on the fired ceramic substrate 11 to form the through-holes 11a. Is also good.
【００２０】図７に本発明の請求項１に係るパワーモジ
ュール用基板１０を用いた半導体装置を説明する。先ず
図７（ａ）に示すように、パワーモジュール用基板１０
に形成された回路パターン１１ａに半導体素子２３がは
んだ２３ａにより搭載され、図７（ｂ）に示すように、
半導体素子２３が搭載されたパワーモジュール用基板１
０の表面に、端子２４が内周面に設けられた枠部材２５
がその半導体素子２３を包囲するように接着される。端
子２４は半導体素子２３と接続線２３ｂにより接続さ
れ、図７（ｃ）に示すように、枠部材２５により包囲さ
れる空間にはシリコーンゲル２９のような絶縁性ゲルが
充填される。絶縁性ゲルの充填により半導体素子２３を
封止した後、枠部材２５の上面には蓋板２５ａが接着さ
れる。FIG. 7 illustrates a semiconductor device using the power module substrate 10 according to claim 1 of the present invention. First, as shown in FIG.
The semiconductor element 23 is mounted on the circuit pattern 11a formed by the solder 23a, and as shown in FIG.
Power module substrate 1 on which semiconductor element 23 is mounted
0, a frame member 25 having a terminal 24 provided on the inner peripheral surface.
Are adhered so as to surround the semiconductor element 23. The terminal 24 is connected to the semiconductor element 23 by a connection line 23b. As shown in FIG. 7C, a space surrounded by the frame member 25 is filled with an insulating gel such as a silicone gel 29. After sealing the semiconductor element 23 by filling with an insulating gel, a lid plate 25 a is adhered to the upper surface of the frame member 25.
【００２１】次に、水冷式ヒートシンク２７のパワーモ
ジュール用基板１０が取付けられる部分に必要に応じて
シリコーン樹脂が塗布され、その上にセラミック基板１
１を配置する。水冷式ヒートシンク２７は内部に冷却水
２８が循環する水路２７ｂが形成され、この水路２７ｂ
に冷却水２８が循環することにより熱を外部に放散する
ように構成される。カラー１６の通孔１６ｃには雄ねじ
２６が挿通され、雄ねじ２６は水冷式ヒートシンク２７
に形成された雌ねじ２７ａに螺合される。これによりセ
ラミック基板１１は水冷式ヒートシンク２７に直接接合
されて半導体装置が得られる。この半導体装置では、半
導体素子２３から水冷式ヒートシンク２７までの熱の伝
達経路は、図９に示す従来の熱の伝達経路より短く、半
導体素子２３からの熱は水冷式ヒートシンク２７に有効
に伝達されて外部に放散される。Next, a silicone resin is applied to the portion of the water-cooled heat sink 27 where the power module substrate 10 is to be mounted, if necessary.
1 is arranged. In the water-cooled heat sink 27, a water passage 27b through which the cooling water 28 circulates is formed.
The cooling water 28 is circulated to dissipate heat to the outside. A male screw 26 is inserted into the through hole 16 c of the collar 16, and the male screw 26 is
Is screwed into the female screw 27a formed at the bottom. As a result, the ceramic substrate 11 is directly joined to the water-cooled heat sink 27 to obtain a semiconductor device. In this semiconductor device, the heat transmission path from the semiconductor element 23 to the water-cooled heat sink 27 is shorter than the conventional heat transmission path shown in FIG. 9, and the heat from the semiconductor element 23 is effectively transmitted to the water-cooled heat sink 27. It is dissipated outside.
【００２２】なお、上述した半導体装置は雄ねじ２６を
水冷式ヒートシンク２７に形成された雌ねじ２７ａに螺
合したが、図６に示すように雄ねじ２６を水冷式ヒート
シンク２７に貫通して形成された取付孔２７ｃに更に挿
通してナット３１に螺合することにより半導体装置を得
ても良い。また、上述した半導体装置は請求項１に係る
パワーモジュール用基板１０を用いたが、請求項２に係
るパワーモジュール用基板２０を用いる場合には、ワッ
シャ１８の連通孔１８ａに挿通された雄ねじ２６を弾性
体１７の挿通孔１７ｃに挿入し、この雄ねじ２６を水冷
式ヒートシンク２７に形成された雌ねじ２７ａ又は水冷
式ヒートシンク２７に貫通して形成された取付孔２７ｃ
に更に挿通してナット３１に螺合することにより、セラ
ミック基板１１を水冷式ヒートシンク２７に接合して半
導体装置を得る。このように請求項２に係るパワーモジ
ュール用基板２０を用いた半導体装置でも、半導体素子
２３から水冷式ヒートシンク２７までの熱の伝達経路
は、図９に示す従来の熱の伝達経路より短く、半導体素
子２３からの熱は水冷式ヒートシンク２７に有効に伝達
されて外部に放散される。In the above-described semiconductor device, the male screw 26 is screwed into the female screw 27a formed on the water-cooled heat sink 27, but as shown in FIG. The semiconductor device may be obtained by further inserting it into the hole 27c and screwing it into the nut 31. In the above-described semiconductor device, the power module substrate 10 according to claim 1 is used. However, when the power module substrate 20 according to claim 2 is used, the male screw 26 inserted into the communication hole 18 a of the washer 18 is used. Is inserted into the insertion hole 17c of the elastic body 17, and the male screw 26 is formed into the female screw 27a formed in the water-cooled heat sink 27 or the mounting hole 27c formed through the water-cooled heat sink 27.
The ceramic substrate 11 is joined to the water-cooled heat sink 27 by further inserting the screw into the nut 31 to obtain a semiconductor device. As described above, in the semiconductor device using the power module substrate 20 according to claim 2, the heat transmission path from the semiconductor element 23 to the water-cooled heat sink 27 is shorter than the conventional heat transmission path shown in FIG. Heat from the element 23 is effectively transmitted to the water-cooled heat sink 27 and dissipated to the outside.
【００２３】[0023]
【発明の効果】以上述べたように、本発明によれば、セ
ラミック基板の貫通孔に弾性体を介してカラー又はワッ
シャを設けるので、このカラー又はワッシャを使用して
雄ねじによりセラミック基板を水冷式ヒートシンクに接
合しても、雄ねじの締結力がセラミック基板に直接加わ
ることはなく、雄ねじの締結力に起因するセラミック基
板の破損を防止することができる。また、弾性体を介し
てセラミック基板を水冷式ヒートシンクに接合するの
で、貫通孔と水冷式ヒートシンクの雌ねじ又は取付孔と
の間に多少の誤差があってもその取付誤差を弾性体が弾
性により吸収してセラミック基板をヒートシンクに確実
に取付けることができる。また、膨張又は収縮により生
じるセラミック基板と水冷式ヒートシンクとの取付誤差
もその弾性体がその弾性により吸収するので、温度変化
に起因するセラミック基板の破損を防止することもでき
る。As described above, according to the present invention, a collar or a washer is provided in a through hole of a ceramic substrate via an elastic body, so that the ceramic substrate is water-cooled by a male screw using the collar or the washer. Even when joined to the heat sink, the fastening force of the male screw is not directly applied to the ceramic substrate, and it is possible to prevent the ceramic substrate from being damaged due to the fastening force of the male screw. In addition, since the ceramic substrate is joined to the water-cooled heat sink via the elastic body, even if there is some error between the through hole and the female screw or mounting hole of the water-cooled heat sink, the elastic body absorbs the mounting error by elasticity. Thus, the ceramic substrate can be securely attached to the heat sink. The elastic body also absorbs the mounting error between the ceramic substrate and the water-cooled heat sink caused by expansion or contraction due to its elasticity, so that the ceramic substrate can be prevented from being damaged due to a temperature change.
【００２４】更に、回路パターンに半導体素子を搭載
し、カラーの通孔に雄ねじを挿通して又はワッシャの連
通孔に挿通された雄ねじを弾性体の挿通孔に遊挿して、
水冷式ヒートシンクに形成された雌ねじ又は又は水冷式
ヒートシンクに貫通して形成された取付孔に更に挿通し
てナットに螺合することによりパワーモジュール用基板
を水冷式ヒートシンクに直接接合した半導体装置では、
水冷式ヒートシンクに直接接合されたパワーモジュール
用基板の回路パターンに搭載された半導体素子から水冷
式ヒートシンクまでの熱の伝達経路は比較的短くなり、
半導体素子からの熱は水冷式ヒートシンクまで有効に伝
達される。この結果、本発明ではセラミック基板を損傷
させることなく半導体素子等から水冷式ヒートシンクま
での熱の伝達経路を短くして半導体素子からの熱を有効
に放散することができる。Further, a semiconductor element is mounted on the circuit pattern, and a male screw is inserted into the through hole of the collar, or a male screw inserted through the communication hole of the washer is loosely inserted into the insertion hole of the elastic body.
In a semiconductor device in which the power module substrate is directly joined to the water-cooled heat sink by further inserting the female screw formed in the water-cooled heat sink or the mounting hole formed through the water-cooled heat sink and screwing the nut to the nut,
The heat transfer path from the semiconductor element mounted on the circuit pattern of the power module substrate directly bonded to the water-cooled heat sink to the water-cooled heat sink is relatively short,
Heat from the semiconductor element is effectively transferred to the water-cooled heat sink. As a result, according to the present invention, the heat transfer path from the semiconductor element or the like to the water-cooled heat sink can be shortened and the heat from the semiconductor element can be effectively dissipated without damaging the ceramic substrate.
【図１】本発明のパワーモジュール用基板の断面図。FIG. 1 is a cross-sectional view of a power module substrate according to the present invention.
【図２】そのパワーモジュール用基板が水冷式ヒートシ
ンクに取付けられる状態を示す斜視図。FIG. 2 is a perspective view showing a state where the power module substrate is mounted on a water-cooled heat sink.
【図３】本発明の別のパワーモジュール用基板の断面
図。FIG. 3 is a cross-sectional view of another power module substrate of the present invention.
【図４】その別のパワーモジュール用基板が水冷式ヒー
トシンクに取付けられる状態を示す斜視図。FIG. 4 is a perspective view showing a state where another power module substrate is attached to a water-cooled heat sink.
【図５】本発明の更に別のパワーモジュール用基板の断
面図。FIG. 5 is a sectional view of still another power module substrate according to the present invention.
【図６】雄ねじが水冷式ヒートシンクの取付孔に挿通さ
れて取付けられた図１に対応するパワーモジュール用基
板の断面図。FIG. 6 is a cross-sectional view of the power module substrate corresponding to FIG. 1 in which a male screw is inserted and mounted in a mounting hole of a water-cooled heat sink.
【図７】そのパワーモジュール用基板を含む半導体装置
の製造行程図。FIG. 7 is a manufacturing process diagram of the semiconductor device including the power module substrate.
【図８】従来例を示す図１に対応する断面図。FIG. 8 is a sectional view showing a conventional example and corresponding to FIG.
【図９】別の従来例を示す図１に対応する断面図。FIG. 9 is a sectional view corresponding to FIG. 1, showing another conventional example.
１０，２０ パワーモジュール用基板 １１ セラミック基板 １１ａ 回路パターン １１ｂ 貫通孔 １６ カラー １６ａ 管状部 １６ｂ フランジ部 １６ｃ 通孔 １７ 弾性体 １７ａ 弾性筒部 １７ｂ 弾性フランジ部 １７ｃ 挿通孔 １８ ワッシャ １８ａ 連通孔 ２３ 半導体素子 ２４ 端子 ２５ 枠部材 ２５ａ蓋板 ２６ 雄ねじ ２７ 水冷式ヒートシンク ２７ａ 雌ねじ ２７ｃ 取付孔 ２９ 絶縁性ゲル ３１ ナット 10, 20 Power module substrate 11 Ceramic substrate 11a Circuit pattern 11b Through hole 16 Collar 16a Tubular portion 16b Flange portion 16c Through hole 17 Elastic body 17a Elastic cylinder portion 17b Elastic flange portion 17c Insertion hole 18 Washer 18a Communication hole 23 Semiconductor element 24 Terminal 25 Frame member 25a Lid plate 26 Male screw 27 Water-cooled heat sink 27a Female screw 27c Mounting hole 29 Insulating gel 31 Nut
───────────────────────────────────────────────────── フロントページの続き (72)発明者 長瀬 敏之 埼玉県大宮市北袋町１丁目297番地 三菱 マテリアル株式会社総合研究所内 (72)発明者 島村 正一 埼玉県大宮市北袋町１丁目297番地 三菱 マテリアル株式会社総合研究所内 Ｆターム(参考） 5F036 AA01 BA10 BB01 BB08 BC03 BC05 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Toshiyuki Nagase 1-297 Kitabukurocho, Omiya-shi, Saitama Mitsubishi Materials Research Institute (72) Inventor Shoichi Shimamura 1-297 Kitabukurocho, Omiya-shi, Saitama Mitsubishi Material Co., Ltd. Research Laboratory F term (reference) 5F036 AA01 BA10 BB01 BB08 BC03 BC05
Claims (3)
つ複数の貫通孔(11b)が形成されたセラミック基板(11)
と、 前記貫通孔(11b)に遊挿され通孔(16c)を有する管状部(1
6a)と前記セラミック基板(11)の上面に対向する環状の
押え部(16b)が一体的に形成されたカラー(16)と、 前記押え部(16b)と前記セラミック基板(11)の上面との
間に介装する環状の弾性フランジ部(17b)と前記管状部
(16a)に嵌入しかつ前記貫通孔(11b)に挿入する弾性筒部
(17a)が一体的に形成された弾性体(17)とを備え、 前記通孔(16c)に雄ねじ(26)を挿通して前記雄ねじ(26)
を水冷式ヒートシンク(27)に形成された雌ねじ(27a)又
は前記水冷式ヒートシンク(27)に貫通して形成された取
付孔(27c)に更に挿通してナット(31)に螺合し、前記セ
ラミック基板(11)を前記水冷式ヒートシンク(27)に接合
するように構成されたパワーモジュール用基板。A ceramic substrate (11) having a circuit pattern (11a) formed on a surface thereof and a plurality of through holes (11b) formed thereon.
A tubular portion (1) having a through hole (16c) loosely inserted into the through hole (11b).
6a) and a collar (16) in which an annular pressing portion (16b) facing the upper surface of the ceramic substrate (11) is integrally formed, and the pressing portion (16b) and the upper surface of the ceramic substrate (11). An annular elastic flange portion (17b) interposed between the tubular portion and
(16a) and an elastic cylindrical portion inserted into the through hole (11b)
(17a) integrally formed with an elastic body (17), wherein the male screw (26) is inserted by inserting a male screw (26) into the through hole (16c).
Into a female screw (27a) formed in a water-cooled heat sink (27) or a mounting hole (27c) formed through the water-cooled heat sink (27) and screwed into a nut (31). A power module substrate configured to join the ceramic substrate (11) to the water-cooled heat sink (27).
つ複数の貫通孔(11b)が形成されたセラミック基板(11)
と、 前記貫通孔(11b)に挿入され挿通孔(17c)を有する弾性筒
部(17a)と前記セラミック基板(11)の上面に当接する環
状の弾性フランジ部(17b)が一体的に形成された弾性体
(17)と、 前記挿通孔(17c)に連通する連通孔(18a)を有しかつ前記
弾性フランジ部(17b)を介して前記セラミック基板(11)
の上面に配置されたワッシャ(18)とを備え、 前記連通孔(18a)に挿通された雄ねじ(26)を前記挿通孔
(17c)に挿通して水冷式ヒートシンク(27)に形成された
雌ねじ(27a)又は前記水冷式ヒートシンク(27)に貫通し
て形成された取付孔(27c)に更に挿通してナット(31)に
螺合し、前記セラミック基板(11)を前記水冷式ヒートシ
ンク(27)に接合するように構成されたパワーモジュール
用基板。2. A ceramic substrate (11) having a circuit pattern (11a) formed on a surface thereof and a plurality of through holes (11b) formed thereon.
An elastic cylindrical portion (17a) having an insertion hole (17c) inserted into the through hole (11b) and an annular elastic flange portion (17b) abutting on the upper surface of the ceramic substrate (11) are integrally formed. Elastic body
(17), a communication hole (18a) communicating with the insertion hole (17c), and the ceramic substrate (11) through the elastic flange portion (17b).
And a washer (18) disposed on the upper surface of the male screw (26) inserted through the communication hole (18a).
The female screw (27a) formed in the water-cooled heat sink (27) through the (17c) or the mounting hole (27c) formed through the water-cooled heat sink (27) is further inserted into the nut (31). A power module substrate configured to be screwed into the substrate and to join the ceramic substrate (11) to the water-cooled heat sink (27).
用基板(10,20)の回路パターン(11a)に半導体素子(23)が
搭載され、 端子(24)が内周面に設けられた枠部材(25)が前記パワー
モジュール用基板(10,20)の表面に前記半導体素子(23)
を包囲するように接着され、 前記端子(24)と前記半導体素子(23)とが接続されて絶縁
性ゲル(29)が充填され、 前記枠部材(25)の上面に蓋板(25a)が接着され、 請求項１記載のカラー(16)の通孔(16c)又は請求項２記
載のワッシャ(18)及び弾性体(17)の連通孔(18a)及び挿
通孔(17c)に雄ねじ(26)が挿通され、 前記雄ねじ(26)を水冷式ヒートシンク(27)に形成された
雌ねじ(27a)又は前記水冷式ヒートシンク(27)に貫通し
て形成された取付孔(27c)に更に挿通してナット(31)に
螺合することにより前記パワーモジュール用基板(10,2
0)が前記水冷式ヒートシンク(27)に直接接合された半導
体装置。3. A frame in which a semiconductor element (23) is mounted on a circuit pattern (11a) of the power module substrate (10, 20) according to claim 1 or 2, and a terminal (24) is provided on an inner peripheral surface. A member (25) is provided on the surface of the power module substrate (10, 20) on the surface of the semiconductor element (23).
The terminal (24) and the semiconductor element (23) are connected and filled with an insulating gel (29), and a lid plate (25a) is provided on the upper surface of the frame member (25). A male screw (26) is inserted into the through hole (16c) of the collar (16) according to claim 1 or the communication hole (18a) and the insertion hole (17c) of the washer (18) and the elastic body (17) according to claim 2. ) Is inserted, and the male screw (26) is further inserted through a female screw (27a) formed in the water-cooled heat sink (27) or a mounting hole (27c) formed through the water-cooled heat sink (27). The power module substrate (10, 2) is screwed into the nut (31).
0) is a semiconductor device directly joined to the water-cooled heat sink (27).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11005135A JP2000208682A (en) | 1999-01-12 | 1999-01-12 | Power module substrate and semiconductor device using this substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11005135A JP2000208682A (en) | 1999-01-12 | 1999-01-12 | Power module substrate and semiconductor device using this substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000208682A true JP2000208682A (en) | 2000-07-28 |
Family
ID=11602876
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11005135A Pending JP2000208682A (en) | 1999-01-12 | 1999-01-12 | Power module substrate and semiconductor device using this substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000208682A (en) |
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1999
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|---|---|---|---|---|
| US8745841B2 (en) | 2004-03-31 | 2014-06-10 | Dowa Metaltech Co., Ltd. | Aluminum bonding member and method for producing same |
| KR100794373B1 (en) | 2006-06-05 | 2008-01-15 | 잘만테크 주식회사 | Water Block Device for Computer Graphics Card |
| JP2013219244A (en) * | 2012-04-10 | 2013-10-24 | Mitsubishi Electric Corp | Fixing method of semiconductor module of semiconductor device |
| JP2018157201A (en) * | 2017-03-16 | 2018-10-04 | 三菱マテリアル株式会社 | Resistance device and method of manufacturing resistance device |
| JP2018174228A (en) * | 2017-03-31 | 2018-11-08 | 富士電機株式会社 | Semiconductor device and method of manufacturing the same |
| JP2020072236A (en) * | 2018-11-02 | 2020-05-07 | 株式会社Pfu | Electronic apparatus |
| JP7224146B2 (en) | 2018-11-02 | 2023-02-17 | 株式会社Pfu | Electronics |
| JP2023122161A (en) * | 2022-02-22 | 2023-09-01 | ニデックパワートレインシステムズ株式会社 | Rotating electric machine and pump |
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