JP2000209509A - Solid-state imaging device and imaging system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a device which can perform a partial reading operation and also a fast auto-focus or auto-exposure operation by preparing a means which reads out the photoelectric converters belonging to the blocks divided every plural elements in an auto-focus setting mode. SOLUTION: A photoelectric converter is divided into blocks in every plural elements and a means is prepared to read out the photoelectric converters belonging to those blocks in an auto-focus(AF) setting mode. For instance, a photoelectric converter has 121 pixels in all, that is (11×11) pixels including horizontal H1-H11 and vertical V1-V11 with three horizontal areas and three vertical areas defined as the pixel block positions. Every block reads out five crosses in all for AF. In this case, a vertical shift register VSR selects a horizontal specific pixel and a horizontal shift register HSR reads the vertical pixel signals to output them to an output line HL. The line HL has a resetting MOS transistor Q1 to exclude the remaining electric charge and also an AMP which serves as an output buffer.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state imaging device having a photoelectric conversion element, and more particularly to a solid-state imaging device capable of reading out a plurality of specific photoelectric conversion elements for autofocusing or the like.

[0002]

2. Description of the Related Art Conventionally, as an image pickup apparatus, a light of a subject is focused on a camera lens and introduced into a silver halide film as an optical sensor. A photoelectric conversion image was recorded on a predetermined layer of the film. The exposed silver salt film was then subjected to a chemical development process and a fixing process to obtain a negative or positive film. The film is
Then, the user can visually recognize the image of the subject photographed on the photographic paper.

In recent years, in an image pickup apparatus, a video camera, and the like, the cell size of a photoelectric conversion element using a miniaturization process has been energetically reduced for higher resolution. on the other hand,
It is possible to amplify and output the photoelectric conversion signal because the photoelectric conversion signal output decreases due to size reduction, etc.
2. Description of the Related Art Amplification type photoelectric conversion devices have attracted attention.

[0004] Such amplification type photoelectric conversion devices include BA
There are two-dimensional solid-state imaging devices of XY address type sensors such as SIS, MOS type, SIT, AMI, and CMD. Meanwhile, 2
As a three-dimensional solid-state imaging device, C
A CD (Charge Coupled Device) type sensor is excellently used.

In recent years, digitization of digital cameras, digital video cameras, and the like has become popular, and a method of recording a subject image as an image signal on a recording medium using a highly integrated CCD camera has been actively performed. ing. The solid-state imaging device, which is a CCD camera, electronically generates AE
(Automatic Exposure) and AF (Automatic Exposure)
Focus: Auto focus).

As an AE, in a digital camera or the like having a two-dimensional solid-state imaging device, the exposure conditions for the imaging are appropriately adjusted at the time of imaging to set an exposure time according to the sensitivity of the solid-state imaging device. When setting the exposure time, the amount of light hitting a part of the two-dimensional area sensor is measured,
Until the value reaches a certain target value, parameters such as the aperture are shaken to find an optimum value. In the case of an AE of a digital camera, the CCD type two-dimensional area sensor reads out all pixel data, extracts a block from the data, accumulates the data once, compares it with an appropriate predetermined exposure level, and determines the shutter speed and the like. The parameters such as the aperture are changed and the blocks are extracted again and compared with the predetermined exposure level. After several repetitions, the condition when the exposure level reaches the predetermined exposure level is determined as the exposure condition.

As an AF, an object image of a subject is read, the position of the lens on which the object is focused is measured while changing the camera lens position, and the optimal lens position is set. When the button is pressed, shooting is performed under each condition.

[0008] One method of AF will be described with reference to FIG. The object is focused by a lens as a triple circle having the same center, and the result is measured by a sensor using a signal intensity. FIG. 10A shows the case where the focus is matched, the signal intensity with respect to the spatial position shows a rectangular staircase state corresponding to the shape of the subject, and when this signal intensity is first-order differentiated, it is shown as a differential absolute value. , A sharp impulse-like waveform is obtained at the change position. FIG.
As shown in (b) and (c), when the image is out of focus,
The signal intensity level with respect to the spatial position has a waveform having a slope characteristic at the changing portion of the subject, and when this is differentiated, the waveform has a rectangular shape with small amplitude at the changing portion, and the width of this rectangular wave It can be understood that the smaller the value is and the larger the amplitude is, the smaller the defocus is. Therefore, in order to adjust the position of the lens to the state of just focus, the signal intensity is differentiated, and it can be determined that the focus is on the position of the lens at which the differentiated value is minimum.

[0009]

However, CCDs
In the solid-state imaging device, an image of a two-dimensional area is generally read for AF, stored in a storage unit having a two-dimensional address, and only a part of the storage unit used for AF is read. A differential waveform corresponding to the spatial position of the image signal must be acquired, and it takes a considerable time to store the data in the storage means and read it out. This is repeated a plurality of times in response to a change in the position of the lens. It required the complexity of setting the optimal lens position.

According to the present invention, a part necessary for an autofocus AF or an auto exposure AE can be partially read, which is impossible in a CCD type solid-state imaging device.
An object of the present invention is to provide a solid-state imaging device capable of high-speed reading, high-speed autofocus, or autoexposure.

[0011]

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned object, and in a solid-state imaging device having a plurality of photoelectric conversion elements arranged in a matrix, a read-out operation from the photoelectric conversion elements is provided. Horizontal / vertical selection means for selectively reading out signals, and a reading means for dividing the photoelectric conversion element into blocks of a plurality of element units and reading out the photoelectric conversion elements belonging to the block of the plurality of element units when setting auto focus. , Consisting of

Further, in the above-mentioned solid-state imaging device, the photoelectric conversion elements belonging to the plurality of element-unit blocks are cross-shaped in the matrix arrangement.

Further, according to the present invention, in a solid-state imaging device having a plurality of amplifying photoelectric conversion elements arranged in a matrix, horizontal and vertical selection means for selectively reading out a read signal from the photoelectric conversion element; A block in which a photoelectric conversion element is divided into a plurality of element units, wherein when the auto focus is set, the photoelectric conversion elements belonging to the block in the plurality of element units are activated by the vertical selection means, and the vertical selection of the block is performed by the horizontal selection means. The present invention is characterized in that the output line is made active and read out to the output line in time series.

Further, according to the present invention, in a solid-state imaging device having a plurality of amplifying photoelectric conversion elements arranged in a matrix, horizontal and vertical selecting means for selectively reading out a read signal from the photoelectric conversion element; A block in which a photoelectric conversion element is divided into a plurality of element units, wherein when the auto focus is set, the photoelectric conversion elements belonging to the block in the plurality of element units are activated by the horizontal selection unit, and the vertical selection unit is activated by the vertical selection unit. The present invention is characterized in that the output line is made active and read out to the output line in time series.

Further, according to the present invention, in a solid-state imaging device having a plurality of amplifying photoelectric conversion elements arranged in a matrix, horizontal and vertical selection means for selectively reading out a read signal from the photoelectric conversion element; A block obtained by dividing a photoelectric conversion element into a plurality of element units, wherein the photoelectric conversion elements belonging to the block of the plurality of element units are activated by the vertical selection unit, and the vertical output lines of the block are activated by the horizontal selection unit. Reading out the first signal to the output line in time series, further activating the vertical output line by the horizontal selection means for the block belonging to the block of the plurality of elements, and selecting the photoelectric conversion element by the vertical selection means The method is characterized in that the pixels are activated and are read out to the output line as a second signal in time series.

[0016]

[First Embodiment] FIG. 1 is a schematic block diagram of a first embodiment according to the present invention. The solid-state imaging device according to the present embodiment has an auto focus (AF) function and includes a CMOS sensor.

In FIG. 1, there are a total of 121 photoelectric conversion elements of 11 × 11 pixels of horizontal H1 to H11 and vertical V1 to V11, and three horizontal and three vertical pixel block positions. In each block, a total of five cross-shaped pieces are read out for AF. For reading, a specific pixel in the horizontal direction is selected by the vertical shift register VSR, and a vertical image signal is read out to the output line HL by the horizontal shift register HSR. In the output line HL,
A reset MOS transistor Q1 is provided to eliminate residual charges, and an AMP is provided as an output buffer. Actually, 640 × 460 pixels and 1240
There is an example of a high-density solid-state imaging device with a size of × 1040 pixels, which can be applied to specific block reading in the case of the area sensor.

FIG. 2 shows the read timing of five blocks in the pixels of the 11 × 11 photoelectric conversion element. First, MOS
The transistor Q1 is turned on to reset the residual charge on the output line HL. Next, when V1 of the vertical shift register VSR is high, H1, H2, H of the horizontal shift register HSR
3 sequentially become high, read out to the output line HL, and
9, H10 and H11 sequentially become high and blocks B1 and B
Two three pixels are read. Similarly, V2 and V3 of the vertical shift register VSR are sequentially set to high, H1, H2, and H3 of the horizontal shift register HSR are sequentially set to high, and H9, H10, and H11 are sequentially set to high, and read to the output line HL to read the block B1. , B2 are read out from the 3 × 3 pixels.

Similarly, block B3, block B4, B
5 is read out to the output line HL. In this reading, the period during which the vertical shift register VSR is high may be a period during which each pixel of the horizontal shift register HSR is read, and the reading speed is 3 × 3 × 5 blocks compared to the period during which all the pixels 11 × 11 are read. OK, 45/1
In the case where only 21 points are required to match the focus of the subject image for AF, if the reading of one block is sufficient, higher-speed reading is possible.

In the above embodiment, each of the blocks B1 to B5
Although the example in which each of the 3 × 3 pixel signals is read out has been described, when reading out the cross-shaped five pixels in each block in FIG. When V1 of the vertical shift register VSR is high, the horizontal shift register HS
H2 and H10 of R sequentially become high and read to the output line HL. Next, when V2 of the vertical shift register VSR is high, H1, H2 and H3 and H9, H10 and H11 of the horizontal shift register HSR sequentially become high. , Output line HL
When V3 of the vertical shift register VSR is high, H2 and H10 of the horizontal shift register HSR sequentially become high and read to the output line HL. This allows
The photocharges of the cross-shaped pixels in the blocks B1 and B2 can be read, and higher-speed reading can be performed than reading the entire block.

Here, when the user of the imaging apparatus wants to make the focus coincide with the block B2 in the two-dimensional area, the image signal of the photocharge of the block B2 is read, and the level of the differential signal relating to the signal intensity is minimized. By adjusting to the lens position, the adjustment time for auto focus can be significantly reduced.

[Second Embodiment] FIG. 3 is a conceptual block diagram of a solid-state imaging device according to a second embodiment. In the present embodiment, an example is shown in which 9 blocks of 3 horizontal and 3 vertical blocks are read out for AF in 11 × 11 pixels as a two-dimensional area.

In this embodiment, when the vertical shift register VSR V1 is high, the horizontal shift register H is read.
The H1 to H3, H5 to H7, and H9 to H11 of the SR sequentially become high and read out to the output line HL, and when V2 of the vertical shift register VSR is high, the horizontal shift register H
The H1 to H3, H5 to H7, and H9 to H11 of the SRs sequentially become high, are read to the output line HL, and are respectively read as image signals via the AMP. Thereafter, the photoelectric charge of each block is sequentially read.

For AF in this case, reading of all area sensors is not required for each of the nine blocks, and a larger number of blocks are read than in the case of the first embodiment. You can set the correct focus in case.

[Embodiment 3] FIG. 4 is a conceptual block diagram of AF block reading of a solid-state imaging device according to Embodiment 3. Compared to the first embodiment, each block B41 to B41
The shape of B45 is a cross shape.

As described in the first embodiment, first, the output line HL is reset by turning on the reset MOS transistor Q1. Next, V1 of the vertical shift register VSR
Is high, H2, H1 of the horizontal shift register HSR
0 is sequentially set to high, and read to the output line HL. Next, when V2 of the vertical shift register VSR is high, H1, H2, H3 and H9, H10,
H11 is sequentially set to high and read to the output line HL. When V3 of the vertical shift register VSR is high, H2 and H10 of the horizontal shift register HSR are sequentially set to high.
Read to the output line HL. Thereby, block B41,
The photocharge of the cross-shaped pixel of B42 can be read out,
Reading can be performed in a shorter time than reading the entire × 3 block.

The read photocharge signal obtains a differential signal as a signal intensity with respect to a spatial position while adjusting the distance of the camera lens to the object, and sets the camera lens position to the minimum value of the differential signal. I do. In this way, the optimum focus position of the camera lens is set. However, since the reading of the object can be executed at a high speed at each camera lens position, the time spent for AF itself becomes short.

[Fourth Embodiment] FIG. 5 is a conceptual block diagram of a solid-state imaging device according to a fourth embodiment. Embodiments 1-3
On the other hand, in the present embodiment, a cross-type reading method of mainly vertical reading is enabled.

First, the output line HL is reset by turning on the reset MOS transistor Q1. Next, H1 of the horizontal shift register HSR is set high, V2 and V10 of the vertical shift register VSR are sequentially set high, and the output line HL is set.
Read out each photo charge, and then read out the horizontal shift register HSR
Of the vertical shift register VSR to H2
1, V2, V3 and V9, V10, V11 are sequentially set to high, and each photoelectric charge is read out to the output line HL. Then, H3 of the horizontal shift register HSR is set to high, and V2, V10 of the vertical shift register VSR are sequentially set to high. To read out each photocharge on the output line HL. In this manner, the photocharges of the cross-shaped blocks B51 and B54 can be output as vertical reading.

In this embodiment, for example, in a solid-state image pickup device having a two-dimensional area, when focusing on an image in which a subject is shifted to the left as in blocks B51 and B54, the horizontal shift register HSR is mainly read. As a result, the target image can be read out in a shorter time.
The target image can be quickly focused.

[Fifth Embodiment] FIG. 6 is a conceptual circuit diagram of a solid-state imaging device capable of switching between vertical reading and horizontal reading according to a fifth embodiment.

In FIG. 6 (a), each pixel includes photodiodes S1 to S4 for photoelectric conversion, amplification type MOS transistors A1 to A4, and selection MOS transistors T1 to T4.
And 4. Each photocharge of each pixel is read out to the vertical lines H1 and H2, and the transfer pulses φT1 to φT
4, the transfer MOS transistors T11-T controlled by
14, the control signals H1 to H4 of the horizontal shift register HSR are temporarily stored in the storage capacitors C1 to C4.
4, the output MOS transistors T21 to T24 are sequentially turned on, read out to the output line HL, and output through the AMP.

Next, FIG. 6B shows a timing chart in the case of the vertical reading of the solid-state imaging device, and the procedure of the vertical reading will be described. First, the vertical shift register VSR
Is high, and the transfer pulses φT1 and φT3 are high, so that the photocharges of the pixels S1 and S2 are amplified M
The data is stored in the storage capacitors C1 and C3 via the OS transistors A1 and A2 and the selection MOS transistors T1 and T2.

Next, V2 of the vertical shift register VSR
Is high, and the transfer pulses φT2, φT4 are high, so that the photocharges of the pixels S3, S4 are transferred to the amplification MOS transistors A3, A4 and the selection MOS transistor T.
3, and stored in storage capacitors C2 and C4 via T4. At this time, the photocharge signals corresponding to the photocharges of the photodiodes S1, S3, S2, and S4 are stored in the storage capacitors C1 to C4. This photocharge signal is read out to the output line HL in time series by sequentially setting the shift signals H1 to H4 of the horizontal shift register HSR to high, and AMP
And an image signal is output. Thereafter, the image signal is sampled, A / D converted, subjected to shading correction for correcting the variation of each pixel, and output as a video signal.

FIG. 6C shows a timing chart of the solid-state imaging device in the case of horizontal reading, and the horizontal reading procedure will be described. First, by setting V1 of the vertical shift register VSR to high and setting the transfer pulses φT1 and φT3 to high, the photoelectric charges of the pixels S1 and S2 are amplified by MO.
The data is stored in storage capacitors C1 and C3 via S transistors A1 and A2 and select MOS transistors T1 and T2. After that, the shift signal H of the horizontal shift register HSR
1 and H3 are sequentially set to the high level, read out in time series to the output line HL, and amplified by the AMP to output an image signal.

Next, by setting V2 of the vertical shift register VSR to high and setting the transfer pulses φT1 and φT3 to high, the photoelectric charges of the pixels S3 and S4 are amplified by the amplification MOS transistors A3 and A4 and the selection MOS transistor T3.
The data is stored in the storage capacitors C1 and C3 via T4. After that, the shift signals H1, H of the horizontal shift register HSR
3 are sequentially set to high, read out in time series to the output line HL, and amplified by AMP to output an image signal.

In this case, the photoelectric charges of the photodiodes S1 to S4 are read without using the shift signals H2 and H4 of the horizontal shift register HSR and the transfer pulses φT2 and φT4. Therefore, when the reading of the area sensor is switched between the vertical reading and the horizontal reading, it can be easily performed by switching the timing of the transfer pulse between the vertical shift register VSR, the horizontal shift register HSR and the transfer.

When switching between vertical reading and horizontal reading, when adjusting the position of the camera lens, when deciding where to focus on the area sensor, switching is performed after judging which reading method is effective. For example, when the target subject is present in the entire upper part of the area, the horizontal reading can be performed so that only the upper part of the area can be read at high speed. Also, when trying to focus on the right side of the area,
The focus can be adjusted by executing vertical reading in which only the right side of the area can be read.

[Sixth Embodiment] FIG. 7 shows the first to fifth embodiments.
FIG. 2 is a circuit diagram of an example of a photoelectric conversion element that can be used for the present invention. In the figure, first, the floating gate of the amplification MOS transistor A0 is reset to a predetermined potential by turning on the reset MOS transistor. Next, after the photoelectric charge is accumulated in the photodiode S0 for a predetermined time, the vertical selection line is set high and the selection MOS transistor T0 is turned on, and the amplification MOS transistor A0 is activated to read an image signal to the signal output line.

Next, the timing of the horizontal reading and the vertical reading of the solid-state imaging device in FIG. 5 will be described with reference to FIG. First, in the case of horizontal reading, the vertical shift register VS
By setting V2 from R high, the horizontal shift register HSR
H1, H2, H3, H9, H10, and H11 are sequentially set to high, and the photocharge of a predetermined pixel in the horizontal direction in FIG. 5 is read.

Subsequently, H2 of the horizontal shift register HSR
Is high, V1 from the vertical shift register VSR is
With V2, V3 and V9, V10, V11 sequentially set to high, the photoelectric charge of a predetermined pixel in the vertical direction in FIG. 1 is read. When the vertical reading and the horizontal reading are superimposed, each block B5
1, B54 can be read out. At this time, as shown in FIG. 7, in the case of the amplification type sensor, the charge amount of the floating gate is not destroyed and the pixels S51 and S54 overlapping in the vertical reading and the horizontal reading can be read twice. In reading the cross-shaped blocks, the vertical reading and the horizontal reading according to the present embodiment are effective.

In the above-described embodiment, the method of cross-shaped pixel reading or block reading for AF (autofocus) has been described. However, partial reading of the area sensor is performed in the case of AE (automatic exposure). It is also effective. In the case of AF, an image is taken while changing the exposure time, and the exposure time at the time of actual shooting is determined from the signal. As with the autofocus sensor, signals for all pixels are not required, and only signals near the object whose exposure is to be adjusted need be provided. If only this portion can be selectively output, high-speed AE can be performed.
Therefore, if block reading can be performed, each of the above embodiments can be applied to an area different from AF or the same area.

In particular, in the case of a still image camera, the exposure time is determined according to the amount of light at the center of the angle of view. Therefore, as in the case of autofocusing, by performing block reading with the central portion as a block and removing noise components, an accurate exposure time can be determined at high speed. Also, even for a video camera that shoots videos,
Since the light amount of a constantly changing object changes, the change is detected at high speed by block reading, and the degree of aperture corresponding to the optimal exposure time is determined from the block reading image output level, and the area of the exposure point is determined. The light amount to the sensor is reduced to set a linear characteristic light amount. Thus, a high-sensitivity image signal can be obtained.

In the above embodiment, AF and AE
Although the readout timing has been described, at the time of actual imaging, after setting AF and AE, in order to improve the S / N of the CMOS sensor, the photoelectric charge of each pixel is read out,
Before or after that, the noise component of each pixel is read, and the difference is taken and output as an image signal.

[Embodiment 7] FIG.
6 is an overall system diagram using the solid-state imaging device No. 6; FIG. In FIG. 9, the system control unit 58 detects an imaging start signal by pressing an imaging start button of the operation unit 60 and supplies a trigger signal and a clock signal to the solid-state imaging device 42. Output a signal. This signal is supplied to the AE / AF processing unit 56 to set an appropriate exposure amount, adjust the focal length, and set the lens position to the in-focus position. After that, the signal obtained by the solid-state imaging device 42 is transmitted to the A / D converter 4 in accordance with an instruction from the system controller 58.
The digital signal is converted into a digital signal in 6 and the digital signal is processed by the digital signal processor DSP 47 while utilizing the memory 48 to perform shading processing, gamma processing, and the like.

Further, in response to a trigger from the system control unit 58, the encoder unit 51 converts the image signal into an image signal that matches an output device such as a communication system, a recording system, and a still image printing system.
Output to the corresponding output device 61.

In the above-described imaging apparatus, the system control unit 58 repeats a predetermined operation in accordance with the operation of the operation unit 60, and each block has a built-in circuit so as to start the operation in accordance with the instruction of the system control unit 58.

[0048]

As described above, according to the present invention, by reading out a specific block at high speed from the imaging area of the solid-state imaging device, an image signal of a specific focus area for autofocus is read out, and You can set the focus position of the camera lens.

Further, by making the specific block into a cross shape, a more accurate focus position can be set. In addition, by reading a specific block or a cross-shaped pixel signal in a specific block, not only the reading time is significantly reduced, but also the present invention can be applied to auto exposure (AE). By switching both AF and AE of a specific driving device, it is possible to quickly focus on any point in the area and set the exposure time.

[Brief description of the drawings]

FIG. 1 is a configuration block diagram of a first embodiment of the present invention.

FIG. 2 is a read timing chart according to the first embodiment of the present invention.

FIG. 3 is a configuration block diagram of a second embodiment of the present invention.

FIG. 4 is a configuration block diagram of a third embodiment of the present invention.

FIG. 5 is a configuration block diagram of a fourth embodiment of the present invention.

FIG. 6 is a configuration block diagram and a timing chart according to a fifth embodiment of the present invention.

FIG. 7 is a pixel circuit diagram according to a sixth embodiment of the present invention.

FIG. 8 is a timing chart according to a sixth embodiment of the present invention.

FIG. 9 is a configuration block diagram according to a seventh embodiment of the present invention.

FIG. 10 is a conceptual explanatory diagram of a conventional auto focus.

[Explanation of symbols]

 VSR Vertical shift register HSR Horizontal shift register V1 to V11 Output signal of vertical shift register H1 to H11 Output signal of horizontal shift register Q1 Reset MOS transistor AMP Amplifier HL Output line 42 Solid-state imaging device 46 A / D converter 47 Digital signal processor DSP 48 memory 51 encoder 56 AE / AF processing unit 58 system control unit 60 operation unit 61 output device

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H04N 5/235 H01L 27/14 A (72) Inventor Yutake Ueno 3- 30-2 Shimomaruko, Ota-ku, Tokyo Within Canon Inc. (72) Inventor Tohru Koizumi 3-30-2 Shimomaruko, Ota-ku, Tokyo Within Canon Inc. (72) Inventor Takumi Hiyama 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Katsuhisa Ogawa 3-30-2 Shimomaruko, Ota-ku, Tokyo Within Canon Inc. (72) Inventor Narutoshi Sugawa 3-30-2, Shimomaruko, Ota-ku, Tokyo F-term within Canon Inc. (Reference) 2H011 BA33 BA34 BB02 BB04 2H051 AA08 BA47 CB22 CB26 CE14 4M118 AA10 AB01 AB03 BA14 CA03 DB01 FA06 5C022 AB02 AB22 AC42 AC69 5C024 AA01 CA16 FA01 FA11 GA31 JA 10 JA32

Claims (13)

[Claims] 1. A solid-state imaging device having a plurality of photoelectric conversion elements arranged in a matrix, comprising: a horizontal / vertical selector for selectively reading a read signal from the photoelectric conversion element; and a plurality of the photoelectric conversion elements. A solid-state imaging device, comprising: a reading unit that divides the photoelectric conversion elements belonging to the plurality of element blocks into blocks when the automatic focus or the auto exposure is set. 2. The solid-state imaging device according to claim 1, wherein the photoelectric conversion elements belonging to the block of a plurality of elements have a cross shape in the matrix arrangement. 3. A solid-state imaging device having a plurality of amplifying photoelectric conversion elements arranged in a matrix, comprising: horizontal and vertical selection means for selectively reading out a read signal from the photoelectric conversion element; A block divided into a plurality of element units, and when setting auto focus or auto exposure, the photoelectric conversion elements belonging to the block of the plurality of element units are activated by the vertical selection means, and the vertical output of the block is performed by the horizontal selection means. A solid-state imaging device characterized in that lines are activated and read out to an output line in time series. 4. The solid-state imaging device according to claim 1, wherein the photoelectric conversion elements belonging to the plurality of element-unit blocks have a cross shape in the matrix arrangement. 5. A solid-state imaging device having a plurality of amplifying photoelectric conversion elements arranged in a matrix, comprising: a horizontal and vertical selection unit for selectively reading out a read signal from the photoelectric conversion element; A block divided into a plurality of element units, wherein when the auto focus or the auto exposure is set, the photoelectric conversion elements belonging to the block of the plurality of element units are activated by the horizontal selection unit, and the vertical output of the block is performed by the vertical selection unit. A solid-state imaging device characterized in that lines are activated and read out to an output line in time series. 6. A solid-state imaging device having a plurality of amplifying photoelectric conversion elements arranged in a matrix, comprising: horizontal and vertical selection means for selectively reading out a read signal from the photoelectric conversion element; A block divided into a plurality of element units, wherein the photoelectric conversion elements belonging to the block of the plurality of element units are activated by the vertical selection means, and the vertical output lines of the blocks are activated by the horizontal selection means, The output line is read as a first signal. Further, the blocks belonging to the block of the plurality of elements are activated by the horizontal selection means to activate a vertical output line, and the vertical selection means activates a selected pixel of the photoelectric conversion element. A solid-state imaging device which reads out the second signal in time series to an output line. 7. The solid-state imaging device according to claim 6, wherein the block in units of a plurality of elements has a cross shape, the first signal is a readout signal in a horizontal direction, and the second signal is a vertical readout signal. A solid-state imaging device. 8. In a solid-state imaging device having a plurality of photoelectric conversion elements arranged in a matrix, a reading means for sequentially transferring and reading out signals of the plurality of photoelectric conversion elements in an arbitrary column one by one to a horizontal output line. A solid-state imaging device having: 9. The solid-state imaging device according to claim 8, wherein said reading means reads out a signal from an arbitrary photoelectric conversion element in one column. 10. A solid-state imaging device having a plurality of photoelectric conversion elements arranged in a matrix, wherein a signal of the plurality of photoelectric conversion elements in an arbitrary column is sequentially transferred to a horizontal output line for each column and read out. Readout means, second readout means for sequentially transferring and reading out the signals of the plurality of photoelectric conversion elements in an arbitrary row line by row to a horizontal output line, the first readout means and the second readout means And a switching means for switching between the two. 11. The solid-state imaging device according to claim 10, wherein said first reading means reads a signal from an arbitrary photoelectric conversion element in one column, and said second reading means reads an arbitrary signal in one row. A solid-state imaging device for reading a signal from the photoelectric conversion element. 12. The method according to claim 1, wherein
And an AF for performing auto-focus setting based on a signal read from the solid-state imaging device.
Device and a digital signal processor (DS) for performing signal processing based on signals read from the solid-state imaging device.
P). 13. The method according to claim 1, wherein
A solid-state imaging device according to item 1, an auto-exposure (AE) device that performs auto-exposure setting based on a signal read from the solid-state imaging device, and performs signal processing based on the signal read from the solid-state imaging device. An imaging system comprising a digital signal processor (DSP).