JP2000215413A - Magnetic sensor and method of manufacturing the same - Google Patents

Abstract

[PROBLEMS] To provide a magnetoresistive head having a good exchange coupling magnetic field and a stable output. Kind Code: A1 Abstract: A stress is applied during the formation or heat treatment of a spin-valve magnetoresistive laminated film to define the direction of deformation associated with heat treatment of a crystal and to apply in-plane anisotropy to the crystal. A spin valve laminated film having improved exchange coupling characteristics, and a magnetic head and a magnetic recording / reproducing apparatus using the same.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic recording / reproducing apparatus and a magnetoresistive element, and more particularly to a high recording density magnetic recording / reproducing apparatus and a method of manufacturing the same.

[0002]

2. Description of the Related Art Japanese Patent Application Laid-Open No. 2-61572 discloses a laminated film of a ferromagnetic thin film separated by an intermediate layer, the electric resistance of which changes depending on the angle between the magnetizations thereof, and a magnetic field sensor and a magnetic recording apparatus using the same. And a description of an iron-manganese alloy thin film.

[0003] Japanese Patent Application Laid-Open No. 9-35212 discloses Mn- (Ru,
There is a description of a thin-film magnetic head using a (Rh, Ir, Pd, Pt) film.

Japanese Patent Application Laid-Open No. 9-36455 describes a magnetoresistive element in which the thickness of an operation layer is 5 nanometers or less.

Japanese Patent Application Laid-Open No. 8-55312 discloses a magnetoresistive sensor device having a thin keeper layer with a thin spacer layer separated from a spin valve structure.

JP-A-9-147325 describes a magnetoresistive head having a heat-treated PtMn film.

JP-A-6-76247 discloses a Mn alloy, particularly Mn- (Ni, Ir, Pd, Pt, Rh) and Mn-
There is a description of an antiferromagnetic layer having a face-centered tetragonal structure of a Ni-Cr alloy and heat treatment thereof.

Japanese Patent Application Laid-Open No. 9-231525 describes a spin valve sensor having a CrMnPt / Co structure in which the crystal is distorted by about 1%.

[0009]

According to the prior art, a magnetic recording device having a sufficiently high recording density, in particular, a magnetoresistive element which acts on a reproducing portion thereof with sufficient sensitivity and output to an external magnetic field, is realized. Furthermore, it was not possible to obtain good characteristics in which the output symmetry was sufficiently controlled, and it was difficult to realize the function as a storage device.

In recent years, it has been known that a multilayer film in which ferromagnetic metal layers are stacked via a nonmagnetic metal layer has a large magnetoresistance effect, that is, a so-called giant magnetoresistance. In this case, in the magnetoresistance effect, the electric resistance changes depending on the angle between the magnetizations of the ferromagnetic layers separated by the nonmagnetic layer. When this giant magnetoresistance effect is used as a magnetoresistance effect element, a structure called a spin valve has been proposed. That is, a ferromagnetic layer having a structure of ferromagnetic layer / non-magnetic layer / soft magnetic layer, in which the magnetization is substantially fixed within the range of the magnetic field to be sensed, and the other soft magnetic layer is magnetized by an external magnetic field. By the rotation, a change in electric resistance is caused according to the relative angle difference of magnetization, and an output can be obtained.

To fix the magnetization of the ferromagnetic layer, a magnetic film having a large coercive force and a remanent magnetization, or a ferromagnetic layer closely contacted with the antiferromagnetic film by an exchange coupling magnetic field generated at the interface between the antiferromagnetic film and the ferromagnetic layer. Is used to substantially fix the magnetization of the magnetic field.
The fixed effect is called a fixed bias, and the antiferromagnetic film that produces this effect is called a fixed bias film. Further, the ferromagnetic layer in which the magnetization is substantially fixed will be referred to as a ferromagnetic fixed layer. Similarly, a soft magnetic film whose magnetization is rotated by an external magnetic field is referred to as a free layer or a soft magnetic free layer.

As described above, it is desirable that the magnetic head corresponding to a high recording density has a configuration in which a giant magnetoresistance effect is applied and a spin-valve type magnetoresistance effect laminated film is applied. Here, the direction of the magnetic field to be sensed is referred to as a lateral direction, and the direction substantially perpendicular to the direction parallel to the film surface of the magnetoresistive effect laminated film is referred to as a vertical direction. When used as a magnetic head,
In general, the horizontal direction is the element height direction, and the vertical direction is the track width direction. At this time, the width of the pattern of the magnetoresistive laminated film in the element height direction is called the element height, and the width in the track width direction is called the track width. Further, in order to apply a current to the magnetoresistive laminated film, a configuration is generally used in which a pair of electrodes is arranged in the track width direction to detect a resistance change due to a magnetoresistive effect.

In order for the spin valve element to obtain good stability and output as a magnetic sensor, it is necessary that the above-described antiferromagnetic film has sufficiently strong exchange coupling applied to the ferromagnetic pinned layer. Here, "sufficiently strong" means that the exchange coupling magnetic field is large, the coercive force of the ferromagnetic fixed layer attached to the exchange coupling magnetic field is sufficiently small as compared with the exchange coupling magnetic field, and the exchange coupling is thermally stable. Points must be satisfied.

In the prior art, various antiferromagnetic films and methods for forming the same have been studied. One of the features is that the crystal structure is uniform in the plane. Thin films commonly used as magnetic sensors are generally polycrystalline, and those formed on substrates often exhibit strong orientation with respect to the plane of the substrate. For example, when a Ta base film and a Ni—Fe thin film are continuously formed on a glass substrate by 5 nm and a Ni—Fe thin film by 5 nm, the (111) plane of the Ni—Fe thin film having a face-centered cubic structure is strongly parallel to the substrate surface. Orient. That is, there is strong crystal directionality with respect to the direction of the normal to the substrate surface.

However, there is no peculiarity of the crystal orientation of such a thin film in the in-plane direction of the substrate surface, and the crystal grains of the polycrystalline thin film are randomly arranged in the in-plane direction. is there. In particular, in the case of a thin thin film formed at room temperature without using a base film or the like, the orientation in the normal direction perpendicular to the plane is almost non-existent and random in the plane. As a conventional technique for controlling the directionality of a crystal in an in-plane direction, for example, there is a method of epitaxially growing a crystal on a single crystal substrate, but this method is expensive and is not currently used for manufacturing a magnetic sensor.

On the other hand, it is known that the crystal structure of a certain kind of antiferromagnetic film is more distorted than a cubic crystal having high symmetry. For example, NiO is basically a cubic crystal having a NaCl structure, but is strictly a rhombohedron. Cr-45
The at% Mn-10at% Pt film has a basic structure of body-centered cubic,
Although it is body-centered cubic in the state at the time of film formation, when it is heat-treated at 200 ° C. or more, it is distorted by about several% in the (110) direction and the (001) direction to become orthorhombic. Ni-50at% Mn, Pt
Although -50 at% Mn or the like has a face-centered cubic structure at the time of film formation, it becomes a CuAu (I) type ordered tetragonal crystal by heat treatment at about 250 ° C.

In the prior art, the direction of these strains is directional due to the stress of the thin film or the like, even though the direction of the surface normal to the substrate is directional, but the in-plane direction is the random orientation of the crystal grains. Correspondingly, no direction could be controlled. It is considered that the exchange coupling of the antiferromagnetic film is closely related to the magnetic structure of the antiferromagnetic material. The direction of the distortion of the crystal structure of the ferromagnetic film was not controlled, and the exchange coupling of the ideally distorted antiferromagnetic film could not be efficiently used for the magnetic sensor.

Accordingly, it is an object of the present invention to provide a magnetoresistive magnetic sensor and a magnetic recording apparatus compatible with high-density recording, and more specifically, to form a film having a direction in a plane or to form a film. Antiferromagnetic film whose crystal orientation and strain anisotropy are matched to the direction of exchange coupling by heat treatment
An object of the present invention is to provide a spin valve magnetic sensor using a configuration of a ferromagnetic fixed layer, and a magnetic head and a magnetic recording / reproducing apparatus using the same.

[0019]

In a magnetic disk medium, a fine structure called a texture is formed on a substrate, a thin film is formed thereon, and a crystal axis is preferentially oriented in the direction of the texture. Is used. Further, in a magnetic tape medium or the like, a technique is used in which the orientation of the film formation is arranged such that the film particles adhere to the substrate from an oblique direction, and the crystal has directionality.
Further, by performing a heat treatment while applying a stress to the thin film, it is possible to induce a phenomenon accompanied by crystal deformation so as to relax the stress in a specific direction.

In the present invention, a magnetic recording apparatus in which a magnetic sensor using a giant magnetoresistance effect is mounted on a magnetic head is used as a means corresponding to a high recording density. As the above magnetic sensor, a magnetoresistive element including a spin valve type giant magnetoresistive film having a laminated structure of a soft magnetic free layer / nonmagnetic conductive layer / ferromagnetic pinned layer / antiferromagnetic film is used. Here, the spin valve type giant magnetoresistance effect film has a laminated structure of a soft magnetic free layer / a nonmagnetic intermediate layer / a ferromagnetic fixed layer / an antiferromagnetic layer, wherein the antiferromagnetic layer is the ferromagnetic fixed layer. The magnetization of the soft magnetic free layer is rotated in accordance with an external magnetic field, and the relative angle with respect to the magnetization of the ferromagnetic fixed layer is changed to generate a magnetoresistance effect. I do.

An object of the present invention is to enhance exchange coupling of an antiferromagnetic film of a magnetoresistance effect element. As a means for solving the problem, in the present invention, the crystal orientation or the direction of strain of the antiferromagnetic film is controlled. Specifically, first, heat treatment is performed in a state where stress is applied to the base. In a kind of antiferromagnetic film that undergoes a structural change due to heat treatment, for example, the occurrence of strain, the method of applying stress and the direction of strain relaxation corresponding to the magnitude of the stress are defined by this method. Crystal anisotropy can be realized.

Heat treatment by applying a stress to a substrate means that a substrate on which a film is formed in a normal state is subjected to a heat treatment by deforming and binding to a state where a stress is applied, and a method of performing a heat treatment on a substrate in a state where a stress is applied. A method in which a film is formed and a heat treatment is performed in a state where the stress of the substrate is released, a method in which a long stress applying film or a state in which a groove is formed in the substrate such that stress is generated when the heat treatment is performed, etc. Apply Second, a method of forming a film by forming a texture on a substrate in order to realize anisotropy of the crystal when forming the thin film, and forming an anisotropic crystal by forming a thin film on the substrate obliquely. Apply the way to grow.

In a laminated structure including an antiferromagnetic film manufactured by using the above-described means, the crystal structure of the laminated structure is distorted in a specific direction in a plane or has a preferred orientation by X-ray or electron microscope observation. Can be observed.

By mounting a laminated film having improved exchange coupling characteristics as a magnetic sensor on a magnetic head using the above-described means, a magnetic head and a magnetic recording / reproducing apparatus having good output and stability can be obtained. it can.

[0025]

BEST MODE FOR CARRYING OUT THE INVENTION Films constituting a magnetic laminate, a magnetic recording medium, and a magnetoresistive element of the present invention were produced by a high-frequency magnetron sputtering apparatus as follows. The following materials were sequentially laminated on a ceramic substrate having a thickness of 1 mm and a diameter of 3 inches in an atmosphere of 6 mTorr of argon. Tantalum, nickel-20at% iron alloy, copper, cobalt,
Each target of chromium-50 at% manganese, manganese, iron-50 at% manganese, and nickel oxide was used. A 1 cm square chip of the additional element was arranged on the target to adjust the composition. For the chip, platinum, nickel, iron, cobalt, iridium, and palladium were used.

In the laminated film, plasma is generated in the apparatus by applying high-frequency power to each of the cathodes on which the respective targets are arranged, and shutters arranged for each cathode are opened and closed one by one to form each layer sequentially. did. At the time of film formation, a magnetic field of about 80 Oe was applied in parallel to the substrate using a permanent magnet to impart uniaxial anisotropy and to guide the direction of the exchange coupling magnetic field such as a chromium-manganese film in each direction. The formation of the device on the substrate was patterned by a photoresist process. Thereafter, the substrate was processed with a slider and mounted on a magnetic recording device.

The heat treatment was performed at a specific temperature of 230 to 270 ° C. for 1 to 3 hours by applying a magnetic field of 3 kOe in a vacuum.

A specific embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 shows an example of a method for applying a stress to a substrate. The holder 52 of the base 50 is deformed by the spacer 51 that applies a strain to the base 50, and the surface of the base receives a stress accompanying the deformation. After forming the spin-valve laminated film in a normal state, the substrate is fixed to such a holder, and a heat treatment is performed. Direction. Similarly, fix the substrate in such a holder,
After forming the spin valve laminated film, the substrate is released from the holder, and the heat treatment is performed in a state where the stress of the substrate is released and the reverse stress is applied to the spin valve laminated film.

FIG. 2 shows an example of the structure of a spin valve laminated film. The magnetoresistive effect laminated film 10 is formed by laminating a base film 14, a soft magnetic free layer 13, a nonmagnetic intermediate layer 12, a ferromagnetic fixed layer 15, an antiferromagnetic film 11, and a protective film 30 on a base 50. The antiferromagnetic film 11 applies unidirectional anisotropy to the ferromagnetic fixed layer 15 by exchange coupling, and stably fixes the residual magnetization of the ferromagnetic fixed layer 15 within the range of the sensing magnetic field. The soft magnetic free layer 13 includes a Ni-based alloy layer 133 and a Co-based layer 131. The Ni-based alloy layer 133 desirably has a composition in which magnetostriction in a thick film is almost zero, for example, Ni-19 atomic% Fe. In this figure, the antiferromagnetic film 11 has a Cr-45 at% Mn-10 at
The example using% Pt was shown.

FIG. 3 is a graph showing Cr--
FIG. 4 is a diagram showing a magnetization curve of a spin valve film using a 45 at% Mn-10 at% Pt antiferromagnetic film. For the sample of the present invention, the direction of application of the stress is parallel to the exchange coupling magnetic field (//).
And results in two directions, vertical (⊥). It can be seen that the exchange coupling magnetic field is greatly improved when the stress is parallel to the exchange coupling magnetic field, as compared to the prior art without stress. Conversely, when the stress is in the direction perpendicular to the exchange coupling magnetic field, the exchange coupling magnetic field decreases and the coercive force increases.

FIG. 4 shows the CrM according to the present invention and the prior art.
FIG. 4 is a diagram showing a relationship between the thickness of an nPt film and exchange coupling. It can be seen that the exchange coupling magnetic field can be obtained even when CrMnPt is thinner in the case of applying the stress of the present invention, as compared with the case where no stress is applied in the prior art.

FIG. 5 is a diagram showing diffraction curves including in-plane components of the spin valve laminated films of the present invention and the prior art.
In the prior art film, the (10-1) peak is constant even when the in-plane direction of the sample is changed. On the other hand, in the film of the present invention, the peak position shifts to a high angle when the film is parallel to the stress application direction, and conversely, shifts to a low angle in a direction perpendicular to the stress application direction. This means that in the spin-valve film of the present invention, crystal distortion was caused in the in-plane direction and anisotropy was generated, and the exchange coupling characteristics could be improved.

FIG. 6 shows another example of the structure of the spin valve laminated film. The magnetoresistive effect laminated film 10 is formed by laminating a base film 14, a soft magnetic free layer 13, a nonmagnetic intermediate layer 12, a ferromagnetic fixed layer 15, an antiferromagnetic film 11, and a protective film 30 on a base 50. The antiferromagnetic film 11 applies unidirectional anisotropy to the ferromagnetic fixed layer 15 by exchange coupling, and stably fixes the residual magnetization of the ferromagnetic fixed layer 15 within the range of the sensing magnetic field. The soft magnetic free layer 13 includes a Ni-based alloy layer 133 and a Co-based layer 131. Here, the Ni-based alloy layer 133 is made of Ni-17 atomic%.
The example of Fe-10 atomic% Co was shown. In this figure, an example in which Mn-48 atomic% Pt is used for the antiferromagnetic film 11 is shown.

FIG. 7 is a diagram showing a magnetoresistance curve of a spin valve laminated film using the MnPt antiferromagnetic film of the prior art and the present invention. It can be seen that the exchange coupling magnetic field increases and the coercive force decreases in the spin valve laminated film to which the stress is applied, as compared with the case where no stress is applied.

FIG. 8 shows MnP according to the present invention and the prior art.
FIG. 4 is a diagram illustrating a relationship between a thickness of a t film and exchange coupling. It can be seen that the exchange coupling magnetic field can be obtained even when the MnPt is thinner in the case of applying the stress of the present invention as compared with the case where no stress is applied in the prior art. In addition, it can be seen that the coercive force is reduced, and the exchange coupling is more efficient overall.

FIG. 9 is a diagram showing a mechanism of anisotropic generation of crystal distortion due to stress application according to the present invention. When a crystal is distorted by heat treatment, there are a plurality of deformation directions that are equivalent due to the symmetry of the crystal. In the case where no stress is applied as shown on the left side of the figure, the deformation direction of the crystal is deformed with the same probability in a plurality of directions that are equivalent due to the symmetry of the crystal, and as a result, the direction of the crystal strain is in-plane. Become isotropic. In the manufacturing method of the present invention, a stress in a specific direction is applied to the spin valve laminated film at the time when the crystal is deformed by the heat treatment. Then, among the crystallographically equivalent deformation directions, the direction in which the stress is relieved becomes dominant, and in-plane anisotropy occurs in the crystal deformation direction.

FIG. 10 shows another example of a method for applying a stress to a substrate. Grooves 53 and 54 are formed on the surface of the base 50, and stress is generated by the groove shape. Groove 53
The and 54 may be manufactured by processing a substrate or by forming a film having an appropriate thickness such as alumina or nickel oxide in a long shape, such as a film that easily generates stress. The substrate may be processed into such a shape and heat treatment may be performed after forming the spin-valve laminated film, or heat treatment may be performed after forming the groove shape of the substrate after forming the spin-valve laminated film. In addition, since a film forming technique in which texture is used in the prior art or a direction is provided by forming an oblique incident film is known, these may be used.

FIG. 11 is a conceptual diagram of a magnetic head equipped with a magnetic sensor using the magnetoresistive element of the present invention. The magnetoresistive effect laminated film 10, the electrode 40, the lower shield 35, the upper shield / lower core 36, the reproducing gap 37, the coil 42, and the upper core 83 are formed on the base 50, and the opposing surface 63 is formed.

FIG. 12 is a conceptual diagram of a magnetic recording / reproducing apparatus using the magnetic head of the present invention. A magnetoresistive effect laminated film 10, a magnetic domain control film 41, and an electrode 40 are formed on a base 50 also serving as a head slider 90, and a magnetic head made of these is positioned on a recording track 44 on a disk 95 having a recording medium 91. Perform playback. Head slider 9
0 is 0.1 on the disk 95, facing the opposing surface 63.
Levitates to a height of less than a micron, or makes relative movement upon contact. With this mechanism, the magnetoresistive effect laminated film 10 converts the magnetic signal recorded on the recording medium 91 on the disk 95 into
This can be read from the leakage magnetic field 64 of the recording medium 91.

FIG. 13 shows an example of the configuration of a magnetic recording / reproducing apparatus according to the present invention. A disk 95 holding a recording medium 91 for magnetically recording information is rotated by a spindle motor 93, and the head slider 9 is rotated by an actuator 92.
0 is guided on the track of the disk 95. That is, in the magnetic disk device, the reproducing head and the recording head formed on the head slider 90 relatively move close to a predetermined recording position on the disk 95 by this mechanism, and write and read signals sequentially. . Actuator 92 may be a rotary actuator. The recording signal is recorded on the medium by the recording head through the signal processing system 94, and the output of the reproducing head is obtained as a signal through the signal processing system 94.

Further, when the reproducing head is moved to a desired recording track, the position on the track is detected by using the high-sensitivity output from the main reproducing head, and the actuator is controlled to position the head slider. Can be. Although one head slider 90 and one disk 95 are shown in this figure, a plurality of these may be used. The disk 95 may have a recording medium on both sides to record information. When information is recorded on both sides of the disk, head sliders 90 are arranged on both sides of the disk.

As a result of testing the magnetic head of the present invention and a magnetic recording / reproducing apparatus equipped with the magnetic head of the present invention with the above-described configuration, the magnetic head showed sufficient output and good bias characteristics.
The operation reliability was also good.

[0044]

As described above in detail, according to the present invention, it is possible to provide a magnetic sensor which is excellent in bias characteristics, and which is particularly flexible with respect to the accuracy of the element height. A magnetic head having a bias characteristic and a high-density magnetic recording / reproducing apparatus can be obtained.

[Brief description of the drawings]

FIG. 1 is a diagram showing a method for holding a substrate of a spin valve laminated film of the present invention by applying stress.

FIG. 2 shows a magnetic sensor using the magnetoresistive element of the present invention.
FIG. 3 is a diagram showing a configuration example of a cross section of a laminated film configuration using a CrMnPt antiferromagnetic film.

FIG. 3 is a diagram showing a magnetoresistive curve of a laminated film using a CrMnPt antiferromagnetic film of a magnetic sensor according to the related art and the present invention.

FIG. 4 is a characteristic diagram showing a relationship between exchange coupling of a laminated film and a CrMnPt film thickness of the magnetic sensor of the related art and the present invention.

FIG. 5 is a diagram showing anisotropy of an in-plane X-ray diffraction curve of a laminated film of a magnetic sensor according to the related art and the present invention.

FIG. 6 is a diagram showing another configuration example of a cross section of the laminated film configuration of the magnetic sensor using the magnetoresistive element of the present invention.

FIG. 7 shows MnPt of the magnetic sensor of the prior art and the present invention.
FIG. 4 is a diagram showing a magnetoresistance curve of a laminated film using an antiferromagnetic film.

FIG. 8 shows MnPt of the magnetic sensor of the prior art and the present invention.
FIG. 4 is a diagram showing a magnetoresistance curve of a laminated film using an antiferromagnetic film.

FIG. 9 is a diagram showing the relationship between the exchange coupling of the laminated films and the MnPt film thickness of the magnetic sensors of the prior art and the present invention.

FIG. 10 is a view showing another example of the method of applying stress to a substrate according to the present invention.

FIG. 11 is a perspective view showing a configuration example of a magnetic head using the magnetic sensor of the present invention.

FIG. 12 is a conceptual perspective view of a magnetic recording / reproducing apparatus using the magnetic head of the present invention.

FIG. 13 is a diagram showing a configuration example of a magnetic recording / reproducing apparatus of the present invention.

[Explanation of symbols]

10 ... Magnetoresistance effect laminated film, 11 ... Antiferromagnetic film, 12 ...
Non-magnetic intermediate layer, 13: soft magnetic free layer, 14: underlayer, 1
5: ferromagnetic fixed layer, 30: protective film, 35: lower shield, 36: upper shield and lower core, 40: electric terminal,
41: magnetic domain control film, 42: coil, 50: base, 51:
Spacer, 52: Holder, 53, 54: Groove, 63: Opposing surface, 64: Leakage magnetic field from the recording medium, 83: Upper core, 90: Slider, 91: Recording medium, 92: Actuator, 93: Spindle motor, 94 ... Signal processing circuit system, 95 ... Disk, 131 ... Co base layer, 133
... Ni-based alloy layer.

Continuation of the front page (72) Inventor Kenichi Meguro 1-280 Higashi Koigakubo, Kokubunji-shi, Tokyo F-term in the Central Research Laboratory, Hitachi, Ltd. 5D034 BA03 DA05 DA07

Claims (8)

[Claims] A bias film for applying an exchange-coupling magnetic field to said ferromagnetic fixed layer, said ferromagnetic layer having a laminated structure of a ferromagnetic fixed layer and an antiferromagnetic layer formed on a substrate. A magnetic sensor having a stress applying means for applying a stress to the antiferromagnetic film when the antiferromagnetic layer is formed or when the antiferromagnetic film is heat-treated; A method of manufacturing a magnetic sensor, wherein an anisotropic structure is stabilized in a plane of a substrate in a stress application direction. 2. A laminated structure of a soft magnetic free layer / a nonmagnetic intermediate layer / a ferromagnetic fixed layer / an antiferromagnetic layer, wherein the antiferromagnetic layer applies an exchange coupling magnetic field to the ferromagnetic fixed layer. A magnetic sensor having a spin valve film, wherein the magnetization of the soft magnetic free layer rotates in response to an external magnetic field, and the relative angle to the magnetization of the ferromagnetic fixed layer changes to produce a magnetoresistive effect. At the time of forming the structure, the substrate is held in a stress applied state in which the substrate is bent or stretched in a specific direction, and the stress applied state is released to realize a state in which a stress in a specific direction is applied to the stacked structure. A method for producing a magnetic sensor, comprising performing heat treatment. 3. A laminated structure of a soft magnetic free layer / a non-magnetic intermediate layer / a ferromagnetic fixed layer / an antiferromagnetic layer, wherein the antiferromagnetic layer applies an exchange coupling magnetic field to the ferromagnetic fixed layer. A magnetic sensor having a spin valve film, wherein the magnetization of the soft magnetic free layer rotates in response to an external magnetic field, and the relative angle to the magnetization of the ferromagnetic fixed layer changes to produce a magnetoresistive effect. After forming the structure, the substrate is held in a stress applied state in which the substrate is bent or stretched in a specific direction, and the laminated structure is heat-treated while realizing a state in which stress is applied to the laminated structure in a specific direction. Manufacturing method of sensor. 4. A laminated structure of a soft magnetic free layer / a nonmagnetic intermediate layer / a ferromagnetic fixed layer / an antiferromagnetic layer, wherein the antiferromagnetic layer applies an exchange coupling magnetic field to the ferromagnetic fixed layer. A magnetic sensor having a spin valve film, wherein the magnetization of the soft magnetic free layer rotates in response to an external magnetic field, and the relative angle to the magnetization of the ferromagnetic fixed layer changes to produce a magnetoresistive effect. A state in which a stress in a specific direction is generated in the laminated structure by placing a stress applying film patterned in a long shape in a specific direction adjacent to or laminated to the structure, or by processing a part of the base into a groove shape A method for manufacturing a magnetic sensor, wherein the laminated structure is heat-treated while performing the heat treatment. 5. A laminated structure of a soft magnetic free layer / a non-magnetic intermediate layer / a ferromagnetic fixed layer / an antiferromagnetic layer, wherein the antiferromagnetic layer applies an exchange coupling magnetic field to the ferromagnetic fixed layer. A magnetic sensor having a spin valve film, wherein the magnetization of the soft magnetic free layer rotates in response to an external magnetic field, and the relative angle to the magnetization of the ferromagnetic fixed layer changes to produce a magnetoresistive effect. A method for manufacturing a magnetic sensor, wherein a ferromagnetic film or the above laminated structure is manufactured by an oblique incidence thin film forming method. 6. A laminated structure of a soft magnetic free layer / a nonmagnetic intermediate layer / a ferromagnetic fixed layer / an antiferromagnetic layer, wherein the antiferromagnetic layer applies an exchange coupling magnetic field to the ferromagnetic fixed layer. A magnetic sensor having a spin valve film, wherein the magnetization of the soft magnetic free layer rotates in response to an external magnetic field, and the relative angle to the magnetization of the ferromagnetic fixed layer changes to produce a magnetoresistive effect. The structure is polycrystalline, and its crystal structure is distorted in the range of 0.001 to 15% from the basic structure such as cubic,
A magnetic sensor, wherein the distortion is anisotropic in a specific direction in a plane with respect to the substrate. 7. The antiferromagnetic film is composed of 30 to 68 atomic% of chromium and 30 to 68 atomic% of manganese, or in addition thereto, platinum, copper, iridium, rhodium, ruthenium, osmium, rhenium, gold, Silver, cobalt, nickel, or a composition containing 2 to 40 atom% of a plurality thereof, and being body-centered cubic or 0 to 5%
7. The magnetic sensor according to claim 1, wherein the magnetic sensor has a structure slightly distorted within the range. 8. The antiferromagnetic film according to claim 6, wherein said antiferromagnetic film comprises 40 to 60 atomic% of manganese, platinum, copper, iridium, rhodium, ruthenium,
Any of osmium, rhenium, gold, silver, nickel,
Or a composition containing 40 to 60 atomic% of these pluralities,
7. The magnetic sensor and magnetic sensor according to claim 1, wherein the magnetic sensor has a CuAu-type ordered structure that is face-centered cubic or is distorted within 0.01 to 15%.