JP2000215413A5 - - Google Patents
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- JP2000215413A5 JP2000215413A5 JP1999015248A JP1524899A JP2000215413A5 JP 2000215413 A5 JP2000215413 A5 JP 2000215413A5 JP 1999015248 A JP1999015248 A JP 1999015248A JP 1524899 A JP1524899 A JP 1524899A JP 2000215413 A5 JP2000215413 A5 JP 2000215413A5
- Authority
- JP
- Japan
- Prior art keywords
- antiferromagnetic film
- manufacturing
- magnetic
- magnetic sensor
- exchange
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000005291 magnetic effect Effects 0.000 description 9
- 230000005290 antiferromagnetic effect Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Description
【特許請求の範囲】
【請求項１】
軟磁性自由層／非磁性中間層／強磁性固定層／反強磁性膜の積層構成を有し、前記反強磁性膜が前記強磁性固定層に交換結合磁界を印加している磁気センサの製造方法において、前記反強磁性膜あるいは前記積層構成を斜め入射薄膜形成法にて作製することを特徴とする磁気センサの製造方法。
【請求項２】
前記反強磁性膜がＣｒ−Ｍｎ−Ｐｔからなり、その結晶構造が前記交換結合磁界の方向に歪あるいは優先方位を有していることを特徴とする請求項１記載の磁気センサの製造方法。
【請求項３】
前記反強磁性膜がＭｎ−Ｐｔからなり、その結晶構造が前記交換結合磁界の方向に歪あるいは優先方位を有していることを特徴とする請求項１記載の磁気センサの製造方法。
[Claims]
[Claim 1]
Manufacture of a magnetic sensor having a laminated structure of a soft magnetic free layer / non-magnetic intermediate layer / ferromagnetic fixed layer / antiferromagnetic film , and the antiferromagnetic film applies an exchange coupling magnetic field to the ferromagnetic fixed layer. A method for manufacturing a magnetic sensor, which comprises manufacturing the antiferromagnetic film or the laminated structure by an obliquely incident thin film forming method.
2.
The method for manufacturing a magnetic sensor according to claim 1, wherein the antiferromagnetic film is made of Cr-Mn-Pt, and the crystal structure thereof has a distortion or a priority direction in the direction of the exchange-bonded magnetic field.
3.
The method for manufacturing a magnetic sensor according to claim 1, wherein the antiferromagnetic film is made of Mn-Pt, and the crystal structure thereof has a distortion or a priority direction in the direction of the exchange-bonded magnetic field.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01524899A JP4033572B2 (en) | 1999-01-25 | 1999-01-25 | Magnetic sensor and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01524899A JP4033572B2 (en) | 1999-01-25 | 1999-01-25 | Magnetic sensor and manufacturing method thereof |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000215413A JP2000215413A (en) | 2000-08-04 |
| JP2000215413A5 true JP2000215413A5 (en) | 2006-02-09 |
| JP4033572B2 JP4033572B2 (en) | 2008-01-16 |
Family
ID=11883564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP01524899A Expired - Fee Related JP4033572B2 (en) | 1999-01-25 | 1999-01-25 | Magnetic sensor and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4033572B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006139828A (en) | 2004-11-10 | 2006-06-01 | Hitachi Global Storage Technologies Netherlands Bv | Magnetic head |
| US7635974B2 (en) * | 2007-05-02 | 2009-12-22 | Magic Technologies, Inc. | Magnetic tunnel junction (MTJ) based magnetic field angle sensor |
| JP7302612B2 (en) | 2021-01-18 | 2023-07-04 | Tdk株式会社 | magnetic sensor |
| JP7298630B2 (en) | 2021-01-25 | 2023-06-27 | Tdk株式会社 | magnetic sensor |
| DE102023108388A1 (en) * | 2023-03-31 | 2024-10-02 | Johannes Gutenberg-Universität Mainz, Körperschaft des öffentlichen Rechts | Voltage influencing device for generating a local change in an internal mechanical stress |
| CN119199666A (en) * | 2024-09-30 | 2024-12-27 | 中国南方电网有限责任公司 | Out-of-plane perpendicular anisotropic tunnel magnetoresistance sensor and preparation method thereof |
-
1999
- 1999-01-25 JP JP01524899A patent/JP4033572B2/en not_active Expired - Fee Related
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