JP2000261032A - GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE - Google Patents
GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICEInfo
- Publication number
- JP2000261032A JP2000261032A JP5812899A JP5812899A JP2000261032A JP 2000261032 A JP2000261032 A JP 2000261032A JP 5812899 A JP5812899 A JP 5812899A JP 5812899 A JP5812899 A JP 5812899A JP 2000261032 A JP2000261032 A JP 2000261032A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- layer
- substrate
- gan
- emitting layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 150000004767 nitrides Chemical class 0.000 claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- 238000009751 slip forming Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 5
- 239000000203 mixture Substances 0.000 abstract description 3
- 239000002994 raw material Substances 0.000 abstract description 3
- 239000002932 luster Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 64
- 239000000463 material Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910005540 GaP Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical group [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 102100032566 Carbonic anhydrase-related protein 10 Human genes 0.000 description 1
- 101000867836 Homo sapiens Carbonic anhydrase-related protein 10 Proteins 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- -1 alkyl compound Chemical class 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はＧａＮ系の半導体発光素
子に関する。更に詳しくは、ＧａＮ系の半導体層の下地
層の改良に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a GaN-based semiconductor light emitting device. More specifically, the present invention relates to improvement of an underlayer of a GaN-based semiconductor layer.
【０００２】[0002]
【従来の技術】特開平９−２３７９３８号公報には、良
好な結晶のＧａＮ系の半導体層を得るために、下地層と
して岩塩構造をとる金属窒化物の（１１１）面を基板と
して用いることが開示されている。すなわち、この公報
では、岩塩構造をとる金属窒化物を基板として、その
（１１１）面上にＧａＮ系の半導体層を成長させてい
る。2. Description of the Related Art Japanese Patent Application Laid-Open No. 9-237938 discloses that a (111) plane of a metal nitride having a rock salt structure is used as a base layer as a base layer in order to obtain a GaN-based semiconductor layer having good crystallinity. It has been disclosed. That is, in this publication, a GaN-based semiconductor layer is grown on a (111) plane using a metal nitride having a rock salt structure as a substrate.
【０００３】[0003]
【発明が解決しようとする課題】半導体素子の基板に
は、素子の機能を維持するための特性（剛性、耐衝撃性
など）が要求される。基板を金属窒化物で形成したと
き、当該特性を維持するには１００μｍ以上の厚さが望
ましい。しかし、そのような厚さを有する金属窒化物は
工業製品の原材料として提供されていない。そこで、上
記公報に記載の発明を実施する場合には、金属窒化物性
の基板を自作（スパッタ等と考えられる）することにな
るが、それには大変手間がかかる。A substrate for a semiconductor device is required to have characteristics (rigidity, impact resistance, etc.) for maintaining the function of the device. When the substrate is formed of metal nitride, a thickness of 100 μm or more is desirable to maintain the characteristics. However, metal nitrides having such a thickness have not been provided as raw materials for industrial products. Therefore, when implementing the invention described in the above-mentioned publication, a metal nitride substrate is to be made by itself (considered as sputtering or the like), but it takes a lot of trouble.
【０００４】そこで、この発明は、工業的に容易に入手
可能な原材料を用いて良好な結晶構造のＧａＮ系の半導
体層を形成できるようにすることを目的とする。Accordingly, an object of the present invention is to make it possible to form a GaN-based semiconductor layer having a favorable crystal structure using raw materials that are easily available industrially.
【０００５】[0005]
【課題を解決するための手段】本発明は上記課題に鑑み
なされたものであり、その構成は次の通りである。即
ち、基板と、該基板の上に形成された金属窒化物からな
る下地層と、該下地層の上に連続して形成されたＧａＮ
系の半導体からなる発光層と、を備えてなるＧａＮ系の
半導体発光素子。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has the following structure. That is, a substrate, an underlayer made of metal nitride formed on the substrate, and GaN continuously formed on the underlayer.
A GaN-based semiconductor light-emitting device comprising: a light-emitting layer made of a system-based semiconductor.
【０００６】上記のように構成された本発明の半導体発
光素子によれば、基板の上に形成された金属窒化物から
なる下地層の上にＧａＮ系の発光層を形成する。金属窒
化物の組成を調整することにより下地層とその上に形成
する発光層との格子不整を極めて小さくできるので、良
質な結晶のＧａＮ系の発光層を当該下地層の上に成長さ
せることができる。一方、素子の機能を保持するために
必要な厚さは基板が備え得るので、この下地層を薄くす
ることができる。よって、下地層を簡易かつ安価に形成
することができる。基板にはサファイア等の汎用的なも
のを採用すれば、素子は全体として安価に製造できるも
のとなる。さらに、本発明の構成では、発光層の直下に
金属窒化物からなる反射層が設けられる。反射層は金属
色の光沢を有し、可視域の光を反射するため、発光層で
生じた基板方向の光は反射層で反射されることとなる。
また、反射層は発光層の直下に存在するため基板側に向
かった光の実質的に全部が反射されることとなる。その
結果、発光層で生じた基板方向の光の実質的に全部を有
効に利用でき、発光素子の輝度の向上が図れる。According to the semiconductor light emitting device of the present invention configured as described above, a GaN-based light emitting layer is formed on a base layer made of metal nitride formed on a substrate. By adjusting the composition of the metal nitride, the lattice mismatch between the base layer and the light-emitting layer formed thereon can be made extremely small, so that a high-quality crystal GaN-based light-emitting layer can be grown on the base layer. it can. On the other hand, since the substrate can have a thickness necessary to maintain the function of the element, the underlayer can be made thinner. Therefore, the underlayer can be formed easily and inexpensively. If a general-purpose substrate such as sapphire is used for the substrate, the device can be manufactured at low cost as a whole. Further, in the configuration of the present invention, a reflective layer made of a metal nitride is provided immediately below the light emitting layer. Since the reflective layer has a metallic luster and reflects light in the visible range, light in the substrate direction generated in the light emitting layer is reflected by the reflective layer.
In addition, since the reflective layer exists immediately below the light emitting layer, substantially all of the light traveling toward the substrate is reflected. As a result, substantially all of the light in the substrate direction generated in the light emitting layer can be effectively used, and the luminance of the light emitting element can be improved.
【０００７】[0007]
【発明の実施の形態】以下、本発明の各構成要素につい
て説明する。ＧａＮ系の半導体とはIII族窒化物半導体
であって、一般的にはＡｌＸＧａＹＩｎ１−Ｘ−ＹＮ
（０≦Ｘ≦１、０≦Ｙ≦１、Ｘ＋Ｙ≦１）で表される。
かかるＧａＮ系の半導体層は周知の有機金属化合物気相
成長法（以下、ＭＯＣＶＤ法とする。）により成長され
る。また、周知の分子線結晶成長法（以下、ＭＢＥ法と
する。）等によっても成長させることができる。DESCRIPTION OF THE PREFERRED EMBODIMENTS Each component of the present invention will be described below. The semiconductor GaN based a group III nitride semiconductor, typically Al X Ga Y In 1-X -Y N
(0 ≦ X ≦ 1, 0 ≦ Y ≦ 1, X + Y ≦ 1).
Such a GaN-based semiconductor layer is grown by a well-known metalorganic compound vapor deposition method (hereinafter, referred to as MOCVD method). Further, it can be grown by a well-known molecular beam crystal growth method (hereinafter, referred to as MBE method) or the like.
【０００８】基板にはサファイアやＳｉＣ等の六方晶材
料、ＳｉやＧａＰ等の立方晶材料を用いることができ
る。六方晶材料の場合にはそのａ面若しくはｃ面を利用
しその上に下地層を成長させる。立方晶材料の場合には
そのｃ面が利用される。基板としてＳｉＣ、Ｓｉ又はＧ
ａＰを用いた場合、当該基板並びに金属窒化物にはそれ
ぞれ導電性がある。その結果、半導体発光素子の両端に
電極を形成することができ、基板へアースをとることに
よりチャージアップの問題も容易に解決される。この基
板には素子の機能を保持するための特性（剛性、耐衝撃
性など）が要求される。そのため、その厚さはほぼ１０
０μｍ以上とされる。A hexagonal material such as sapphire or SiC, or a cubic material such as Si or GaP can be used for the substrate. In the case of a hexagonal material, an underlayer is grown thereon using the a-plane or the c-plane. In the case of a cubic material, its c-plane is used. SiC, Si or G as substrate
When aP is used, the substrate and the metal nitride have conductivity. As a result, electrodes can be formed at both ends of the semiconductor light emitting element, and the problem of charge-up can be easily solved by grounding the substrate. This substrate is required to have characteristics (rigidity, impact resistance, etc.) for maintaining the function of the element. Therefore, its thickness is almost 10
0 μm or more.
【０００９】下地層は金属窒化物からなる。金属窒化物
の種類は特に限定はされないが、Ｔｉ、Ｚｒ、Ｈｆ若し
くはＴａの窒化物を好適に用いることができる。その
他、ＮｂＮ、ＶＮ、ＹＮ、ＣｒＮ等を採用できる。これ
らの金属窒化物は単独では、例えばＴｉＮはＧａＮに対
して６％、ＡｌＮに対して３．５％の格子不整合があ
り、ＺｒＮでは同様にＧａＮに対して１．５％、ＡｌＮ
に対して３．９％の格子不整合がある。そこで、金属窒
化物からなる下地層と発光層とが格子整合するようにこ
れら金属の合金の窒化物を用いることが好ましい。下地
層の成長方法は特に限定はされないが、プラズマＣＶ
Ｄ、熱ＣＶＤ、光ＣＶＤ等のＣＶＤ（Ｃｈｅｍｉｃａｌ
Ｖａｐｏｕｒ Ｄｅｐｏｓｉｔｉｏｎ）、スパッタ、
リアクティブスパッタ、レーザーアブレーション、イオ
ンプレーティング、蒸着等の（Ｐｈｙｓｉｃａｌ Ｖａ
ｐｏｕｒ Ｄｅｐｏｓｉｔｉｏｎ）等の方法を利用でき
る。下地層の厚さは０．１〜１０μｍとすることが好ま
しい。The underlayer is made of a metal nitride. Although the kind of the metal nitride is not particularly limited, a nitride of Ti, Zr, Hf or Ta can be preferably used. In addition, NbN, VN, YN, CrN, etc. can be adopted. These metal nitrides alone, for example, TiN has a 6% lattice mismatch with GaN and 3.5% with AlN, while ZrN also has a 1.5% lattice mismatch with GaN.
There is a 3.9% lattice mismatch. Therefore, it is preferable to use a nitride of an alloy of these metals so that the underlayer made of metal nitride and the light emitting layer are lattice-matched. The method of growing the underlayer is not particularly limited.
D, CVD (Chemical
Vapor Deposition), sputter,
Reactive sputtering, laser ablation, ion plating, vapor deposition, etc. (Physical Va
Pour Deposition) can be used. The thickness of the underlayer is preferably 0.1 to 10 μm.
【００１０】下地層を適当なバッファ層介して基板の上
に成長させてもよい。バッファ層は単層であっても、複
数のバッファ層を積層してもよい。また、既述の金属窒
化物の上へＴｉ等の金属層を積層し、Ｔｉ／金属窒化物
の積層体を下地層とすることもできる。更には、下地層
を金属窒化物とＴｉ等の金属層との積層体を繰り返した
構成とすることもできる。この場合、最上層は金属窒化
物とすることが好ましい。[0010] An underlayer may be grown on the substrate via a suitable buffer layer. The buffer layer may be a single layer or a plurality of buffer layers may be stacked. Further, a metal layer such as Ti may be laminated on the above-described metal nitride, and a laminate of Ti / metal nitride may be used as an underlayer. Further, the underlayer may be formed by repeating a laminate of a metal nitride and a metal layer such as Ti. In this case, the uppermost layer is preferably made of metal nitride.
【００１１】発光層は下地層に連続して形成される。即
ち、発光層の直下に金属窒化物からなる下地層が存在す
ることとなる。これにより、発光層で生じ基板側に向か
った光の実質的に全部が下地層で反射されることとな
る。その結果、発光層で生じた基板方向の光を有効に利
用でき、発光素子の輝度の向上が図れる。[0011] The light emitting layer is formed continuously to the underlayer. That is, an underlayer made of a metal nitride exists immediately below the light emitting layer. As a result, substantially all of the light generated in the light emitting layer and directed toward the substrate is reflected by the underlying layer. As a result, light in the substrate direction generated in the light emitting layer can be effectively used, and the luminance of the light emitting element can be improved.
【００１２】発光層の上には、クラッド層が周知の方法
で形成され、必要なエッチング工程を経た後、ｎ電極及
びｐ電極が形成される。On the light emitting layer, a clad layer is formed by a known method, and after a necessary etching step, an n electrode and a p electrode are formed.
【００１３】[0013]
【実施例】以下、この発明の１の実施例を図を参照しな
がら説明する。図１はこの実施例の発光ダイオード１で
ある。各半導体層のスペックは次の通りである。 層 ： 組成：ドーパント （膜厚） ｐクラッド層６ ： ｐ−ＧａＮ：Ｍｇ （0.3μm） 発光層５ ： 超格子構造 量子井戸層 ：Ｉｎ０．１５Ｇａ０．８５Ｎ （35Å） バリア層 ：ＧａＮ （35Å） 量子井戸とバリア層の繰り返し数：１〜１０ 反射層４ ： Ｔｉ０．２６８Ｚｒ０．７３２Ｎ （3000Å） バッファ層３ ： Ａｌ （100Å） 基板２ ： シリコン（１１１） （300μm）DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to the drawings. FIG. 1 shows a light emitting diode 1 of this embodiment. The specifications of each semiconductor layer are as follows. Layer: Composition: Dopant (thickness) P-cladding layer 6: p-GaN: Mg (0.3 μm) Light-emitting layer 5: Superlattice structure Quantum well layer: In 0.15 Ga 0.85 N (35 °) Barrier layer: GaN (35 ° ) Number of repetitions of quantum well and barrier layer: 1 to 10 Reflective layer 4: Ti 0.268 Zr 0.732 N (3000 ° ) Buffer layer 3: Al (100 ° ) Substrate 2: Silicon (111) (300 μm)
【００１４】バッファ層３はＭＯＶＰＥ法により基板１
の上に積層される。反射層４はリアクティブスパッタ法
で形成される。発光層５は超格子構造のものに限定され
ず、シングルへテロ型、ダブルへテロ型及びホモ接合型
のものなどを用いることができる。The buffer layer 3 is formed on the substrate 1 by MOVPE.
It is laminated on. The reflection layer 4 is formed by a reactive sputtering method. The light emitting layer 5 is not limited to the superlattice structure, but may be a single hetero type, a double hetero type, a homo junction type, or the like.
【００１５】発光層５とｐクラッド層６との間にマグネ
シウム等のアクセプタをドープしたバンドキャップの広
いＡｌＸＧａＹＩｎ１−Ｘ−ＹＮ（０≦Ｘ≦１、０≦Ｙ
≦１、Ｘ＋Ｙ≦１）層を介在させることができる。これ
は発光層６の中に注入された電子がｐクラッド層６に拡
散するのを防止するためである。ｐクラッド層６を発光
層５側の低ホール濃度ｐ−層とｐ電極８側の高ホール濃
度ｐ＋側とからなる２層構造とすることができる。A wide band gap Al x Ga Y In 1-XY N doped with an acceptor such as magnesium between the light emitting layer 5 and the p clad layer 6 (0 ≦ X ≦ 1, 0 ≦ Y
≦ 1, X + Y ≦ 1) layer can be interposed. This is to prevent electrons injected into the light emitting layer 6 from diffusing into the p clad layer 6. The p-cladding layer 6 can have a two-layer structure including a low hole concentration p − layer on the light emitting layer 5 side and a high hole concentration p + side on the p electrode 8 side.
【００１６】各半導体層は周知のＭＯＣＶＤ法により形
成される。この成長法においては、アンモニアガスとII
I族元素のアルキル化合物ガス、例えばトリメチルガリ
ウム（ＴＭＧ）、トリメチルアルミニウム（ＴＭＡ）や
トリメチルインジウム（ＴＭＩ）とを適当な温度に加熱
された基板上に供給して熱分解反応させ、もって所望の
結晶を基板の上に成長させる。Each semiconductor layer is formed by a well-known MOCVD method. In this growth method, ammonia gas and II
A group I element alkyl compound gas, such as trimethylgallium (TMG), trimethylaluminum (TMA) or trimethylindium (TMI), is supplied to a substrate heated to an appropriate temperature and subjected to a thermal decomposition reaction to produce a desired crystal. Is grown on the substrate.
【００１７】透光性電極７は金を含む薄膜であり、ｐク
ラッド層６の上面の実質的な全面を覆って積層される。
ｐ電極８も金を含む材料で構成されており、蒸着により
透光性電極７の上に形成される。なお、Ｓｉ基板層２が
ｎ電極となる。そしてその所望の位置にワイヤーがボン
ディングされる。The translucent electrode 7 is a thin film containing gold, and is laminated so as to cover substantially the entire upper surface of the p-cladding layer 6.
The p-electrode 8 is also made of a material containing gold, and is formed on the translucent electrode 7 by vapor deposition. Note that the Si substrate layer 2 becomes an n-electrode. Then, a wire is bonded at the desired position.
【００１８】この発明は、上記発明の実施の形態及び実
施例の説明に何ら限定されるものではない。特許請求の
範囲の記載を逸脱せず、当業者が容易に想到できる範囲
で種々の変形態様もこの発明に含まれる。The present invention is not at all limited to the description of the above-described embodiments and examples. Various modifications are included in the present invention without departing from the scope of the claims and within the scope of those skilled in the art.
【００１９】（１０） 前記基板は六方晶材料又は立方
晶材料であり、六方晶の材料の基板上に前記下地層が形
成され、又は立方晶材料の（１１１）面に前記下地層が
形成される、ことを特徴とする請求項１乃至３のいずれ
かに記載の半導体発光素子。 （２０） 前記六方晶材料はサファイア若しくは炭化シ
リコンであり、前記立方晶材料はシリコン若しくはリン
化ガリウムである、ことを特徴とする請求項１乃至３及
び（１０）のいずれかに記載の半導体発光素子。 （３０） 前記金属窒化物は、Ｔｉ、Ｚｒ、Ｈｆ若しく
はＴａの窒化物、又はこれら金属の合金の窒化物の中か
ら選ばれる１又は２以上の金属窒化物である、ことを特
徴とする請求項１乃至３、（１０）及び（２０）のいず
れかに記載の半導体発光素子。(10) The substrate is a hexagonal material or a cubic material, and the underlayer is formed on a substrate of a hexagonal material, or the underlayer is formed on a (111) plane of the cubic material. The semiconductor light emitting device according to claim 1, wherein: (20) The semiconductor light emitting device according to any one of (1) to (3) and (10), wherein the hexagonal material is sapphire or silicon carbide, and the cubic material is silicon or gallium phosphide. element. (30) The metal nitride is a nitride of Ti, Zr, Hf or Ta, or one or more metal nitrides selected from nitrides of alloys of these metals. Item 10. The semiconductor light emitting device according to any one of Items 1 to 3, (10) and (20).
【図１】本発明の実施例の発光ダイオード１を示す図で
ある。FIG. 1 is a view showing a light emitting diode 1 according to an embodiment of the present invention.
１ 発光ダイオード ２ 基板 ３ バッファ層 ４ 反射層 ５ 発光層 ６ ｐクラッド層 ７ 透光性電極 ８ ｐ電極 REFERENCE SIGNS LIST 1 light emitting diode 2 substrate 3 buffer layer 4 reflective layer 5 light emitting layer 6 p clad layer 7 translucent electrode 8 p electrode
───────────────────────────────────────────────────── フロントページの続き (72)発明者 伊藤 潤 愛知県西春日井郡春日町大字落合字長畑１ 番地 豊田合成株式会社内 (72)発明者 野杁 静代 愛知県西春日井郡春日町大字落合字長畑１ 番地 豊田合成株式会社内 Ｆターム(参考） 4G077 AA03 AA07 BE11 BE15 BE47 DA05 DB08 ED06 HA02 5F041 AA31 CA02 CA03 CA04 CA05 CA23 CA33 CA34 CA37 CA40 CA46 CA57 CA65 CA66 CA85 DA07 5F045 AA04 AA19 AB14 AB17 AB18 AB40 AC08 AC12 AF03 AF04 AF09 AF13 CA10 DA53 DA54 5F073 AA73 AA74 CA07 CB04 CB05 CB07 CB19 DA05 DA06 DA07 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Jun Ito Nagahata 1 Ochiai, Kasuga-cho, Nishi-Kasugai-gun, Aichi Prefecture Inside Toyoda Gosei Co., Ltd. Address Toyoda Gosei Co., Ltd. F-term (reference) 4G077 AA03 AA07 BE11 BE15 BE47 DA05 DB08 ED06 HA02 5F041 AA31 CA02 CA03 CA04 CA05 CA23 CA33 CA34 CA37 CA40 CA46 CA57 CA65 CA66 CA85 DA07 5F045 AA04 AA19 AB14 AB17 AC18 AF40 AF08 AF13 CA10 DA53 DA54 5F073 AA73 AA74 CA07 CB04 CB05 CB07 CB19 DA05 DA06 DA07
Claims (3)
らなる発光層と、を備えてなるＧａＮ系の半導体発光素
子。1. A semiconductor device comprising: a substrate; an underlayer including a metal nitride layer formed on the substrate; and a light-emitting layer made of a GaN-based semiconductor continuously formed on the underlayer. GaN based semiconductor light emitting device.
記金属窒化物からなる、ことを特徴とする請求項１に記
載の半導体発光素子。2. The semiconductor light emitting device according to claim 1, wherein a surface of said base layer in contact with said light emitting layer is made of said metal nitride.
を特徴とする請求項１に記載の半導体発光素子。3. The semiconductor light emitting device according to claim 1, wherein said underlayer is made of a metal nitride.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5812899A JP3567780B2 (en) | 1999-03-05 | 1999-03-05 | GaN based semiconductor light emitting device |
| EP00104655A EP1039555A1 (en) | 1999-03-05 | 2000-03-03 | Group III nitride compound semiconductor device |
| US09/518,724 US6426512B1 (en) | 1999-03-05 | 2000-03-03 | Group III nitride compound semiconductor device |
| US10/020,460 US6872965B2 (en) | 1999-03-05 | 2001-12-18 | Group III nitride compound semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5812899A JP3567780B2 (en) | 1999-03-05 | 1999-03-05 | GaN based semiconductor light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000261032A true JP2000261032A (en) | 2000-09-22 |
| JP3567780B2 JP3567780B2 (en) | 2004-09-22 |
Family
ID=13075354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5812899A Expired - Fee Related JP3567780B2 (en) | 1999-03-05 | 1999-03-05 | GaN based semiconductor light emitting device |
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| Country | Link |
|---|---|
| JP (1) | JP3567780B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009238783A (en) * | 2008-03-25 | 2009-10-15 | Kanagawa Acad Of Sci & Technol | Method for manufacturing semiconductor substrate, semiconductor substrate, light-emitting element and electronic element |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03203388A (en) * | 1989-12-29 | 1991-09-05 | Matsushita Electric Ind Co Ltd | Semiconductor light emitting element and its manufacture |
| JPH10321954A (en) * | 1997-05-15 | 1998-12-04 | Fuji Electric Co Ltd | Group III nitride semiconductor device and method of manufacturing the same |
| JPH11260835A (en) * | 1997-07-11 | 1999-09-24 | Tdk Corp | Substrates for electronic devices |
-
1999
- 1999-03-05 JP JP5812899A patent/JP3567780B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03203388A (en) * | 1989-12-29 | 1991-09-05 | Matsushita Electric Ind Co Ltd | Semiconductor light emitting element and its manufacture |
| JPH10321954A (en) * | 1997-05-15 | 1998-12-04 | Fuji Electric Co Ltd | Group III nitride semiconductor device and method of manufacturing the same |
| JPH11260835A (en) * | 1997-07-11 | 1999-09-24 | Tdk Corp | Substrates for electronic devices |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009238783A (en) * | 2008-03-25 | 2009-10-15 | Kanagawa Acad Of Sci & Technol | Method for manufacturing semiconductor substrate, semiconductor substrate, light-emitting element and electronic element |
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| Publication number | Publication date |
|---|---|
| JP3567780B2 (en) | 2004-09-22 |
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