JP2000268387A - Semiconductor light source module manufacturing method and semiconductor light source module - Google Patents
Semiconductor light source module manufacturing method and semiconductor light source moduleInfo
- Publication number
- JP2000268387A JP2000268387A JP11071466A JP7146699A JP2000268387A JP 2000268387 A JP2000268387 A JP 2000268387A JP 11071466 A JP11071466 A JP 11071466A JP 7146699 A JP7146699 A JP 7146699A JP 2000268387 A JP2000268387 A JP 2000268387A
- Authority
- JP
- Japan
- Prior art keywords
- light source
- welding member
- melting point
- chip
- substrate
- Prior art date
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Abstract
(57)【要約】
【課題】 複数の種類の情報記録媒体に対応でき、互い
に近傍に配置した２波長の光源を有する小型軽量の半導
体光源モジュールの製造方法を提供する。
【解決手段】 第１の光源チップ２と第２の光源チップ
３を同一基板１上に配置する半導体光源モジュールの製
造工程において、第１の半田４を用いて上記一方のチッ
プ２を上記基板１に付けた後、上記第１の半田４より融
点の低い第２の半田５を用いて、上記第２の半田５の融
点より高く、上記第１の半田４の融点より低く加熱して
上記他方のチップ３を上記基板１に付けることを特徴と
する半導体光源モジュールの製造方法。
(57) [Problem] To provide a method for manufacturing a small and light semiconductor light source module which can handle a plurality of types of information recording media and has two wavelength light sources arranged close to each other. SOLUTION: In a manufacturing process of a semiconductor light source module in which a first light source chip 2 and a second light source chip 3 are arranged on the same substrate 1, the one chip 2 is connected to the substrate 1 using a first solder 4. Then, the second solder 5 having a lower melting point than the first solder 4 is used to heat the second solder 5 to a temperature higher than the melting point of the second solder 5 and lower than the melting point of the first solder 4. A method for manufacturing a semiconductor light source module, comprising attaching the chip 3 to the substrate 1.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、光学的記録再生装
置の半導体光源モジュールの製造方法に関し、特に、複
数の種類の情報記録媒体に対応でき、互いに近傍に配置
した複数波長の光源を具備する小型・薄型・軽量の半導
体光源モジュールの製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor light source module for an optical recording / reproducing apparatus, and more particularly, to a method for supporting a plurality of types of information recording media and including light sources of a plurality of wavelengths arranged close to each other. The present invention relates to a method for manufacturing a small, thin, and lightweight semiconductor light source module.
【０００２】[0002]
【従来の技術】コンパクトディスク（ＣＤ）、ＤＶＤ等
の光ディスクや光カードメモリ等の情報記録媒体の信号
を読み出すための重要な構成部品として光学ヘッドがあ
る。光学ヘッドには、レーザ光を出射する光源や、光検
出器、ビームスプリッタや対物レンズなどの光学部品を
備える必要がある。2. Description of the Related Art An optical head is an important component for reading signals from an information recording medium such as an optical disk such as a compact disk (CD) or a DVD or an optical card memory. The optical head needs to include a light source that emits laser light, and optical components such as a photodetector, a beam splitter, and an objective lens.
【０００３】従来、光学ヘッドの構成をコンパクト化す
るために、図４に示す半導体光源モジュールがあった。
このモジュールの製造方法としては、まず、シリコン基
板１０１に異方性エッチングにより、基板１０１に凹部
１０５を形成した後、半導体レーザチップ１０２を溶接
部材として半田付けにより、半田の融点より高く加熱し
て凹部１０５に接着した。このモジュールでは、凹部１
０５の斜面１０６で光を反射させて、出射光１０４とし
て取り出す用にしている。また、基板１０１の両端部に
光検出器１０３を形成している。Conventionally, there has been a semiconductor light source module shown in FIG. 4 in order to make the configuration of an optical head compact.
As a method for manufacturing this module, first, after forming a concave portion 105 in the silicon substrate 101 by anisotropic etching, the semiconductor laser chip 102 is soldered as a welding member and heated to a temperature higher than the melting point of the solder. It adhered to the recess 105. In this module, recess 1
The light is reflected by the slope 106 of the light source 05 and is extracted as the outgoing light 104. Further, photodetectors 103 are formed at both ends of the substrate 101.
【０００４】[0004]
【発明が解決しようとする課題】光学ヘッドにおいて、
ＤＶＤ以外に、例えば、ＣＤ−Ｒの情報記録媒体に対応
するためには、赤色以外に赤外光の光源を搭載する必要
がある。従来では、図４に示した半導体レーザモジュー
ルを、赤と赤外の２種類用意して、これをビームスプリ
ッタ等の光学部品を用いて半導体レーザーモジュール外
で合成するような構成の光学系がとられていた。SUMMARY OF THE INVENTION In an optical head,
In addition to a DVD, for example, in order to support a CD-R information recording medium, it is necessary to mount a light source of infrared light in addition to red. Conventionally, an optical system having a configuration in which two types of semiconductor laser modules shown in FIG. 4 are prepared, red and infrared, and these are synthesized outside the semiconductor laser module using an optical component such as a beam splitter. Had been.
【０００５】しかしながら、従来の構成では、半導体光
源モジュールの製造方法の小型・薄型・軽量化に限界が
あり、しかも位置合わせが複雑で、さらなる簡素化、組
立の簡単化ができないという課題があった。However, in the conventional configuration, there is a limit in reducing the size, thickness, and weight of the method of manufacturing the semiconductor light source module, and furthermore, the alignment is complicated, and further simplification and simplification of assembly cannot be performed. .
【０００６】本発明は、従来技術における前記課題を解
決するためになされたものであり、特に、複数の種類の
情報記録媒体に対応でき、互いに近傍に配置した複数波
長の光源を具備する小型・薄型・軽量の半導体光源モジ
ュールの製造方法を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems in the prior art. In particular, the present invention is applicable to a plurality of types of information recording media, and has a small size and a light source having a plurality of wavelengths arranged close to each other. It is an object of the present invention to provide a method for manufacturing a thin and light semiconductor light source module.
【０００７】[0007]
【課題を解決するための手段】前記目的を達成するた
め、本発明の請求項１に記載の発明は、第１の光源チッ
プと第２の光源チップを同一基板上に配置する半導体光
源モジュールの製造工程において、第１の半田を用いて
上記一方のチップを上記基板に付けた後、上記第１の半
田より融点の低い第２の半田を用いて、上記第２の半田
の融点より高く、上記第１の半田の融点より低く加熱し
て上記他方のチップを上記基板に付けることを特徴とす
る半導体光源モジュールの製造方法である。According to one aspect of the present invention, there is provided a semiconductor light source module in which a first light source chip and a second light source chip are arranged on a same substrate. In the manufacturing process, after attaching the one chip to the substrate using a first solder, using a second solder having a lower melting point than the first solder, using a second solder having a melting point higher than the melting point of the second solder, A method for manufacturing a semiconductor light source module, characterized in that the other chip is attached to the substrate by heating it below the melting point of the first solder.
【０００８】これにより、例えば、互いに近傍に配置さ
れた２波長の光源を用いた、小型軽量で、複数の種類の
情報記録媒体に対応できる半導体光源モジュールの製造
方法を得ることができる。Thus, for example, it is possible to obtain a method for manufacturing a semiconductor light source module which is small and lightweight and can be used for a plurality of types of information recording media, using light sources of two wavelengths arranged close to each other.
【０００９】また、本発明の請求項２に記載の発明は、
基板はシリコン結晶であり、異方性エッチングにより形
成された凹部に第１及び第２の光源チップを付ける請求
項１に記載の半導体光源モジュールの製造方法である。Further, the invention according to claim 2 of the present invention provides:
2. The method according to claim 1, wherein the substrate is a silicon crystal, and the first and second light source chips are attached to concave portions formed by anisotropic etching.
【００１０】これにより、例えば、光検出器が一体化可
能で、良好な平面及び斜面が実現できる。As a result, for example, the photodetector can be integrated, and a good plane and inclined surface can be realized.
【００１１】また、本発明の請求項３に記載の発明は、
異方性エッチングにより形成された凹部の傾斜面を、第
１の光源チップと第２の光源チップのそれぞれの出射光
の共通のミラーとする請求項１に記載の半導体光源モジ
ュールの製造方法である。Further, the invention according to claim 3 of the present invention provides:
2. The method according to claim 1, wherein the inclined surface of the concave portion formed by the anisotropic etching is used as a common mirror of the emitted light of each of the first light source chip and the second light source chip. 3. .
【００１２】これにより、例えば、コンパクトな構成
で、２波長の出射光を上方に取り出すことができる。Thus, for example, outgoing light of two wavelengths can be extracted upward with a compact configuration.
【００１３】また、本発明の請求項４に記載の発明は、
第１の光源チップと第２の光源チップを付ける基板領域
の間に境界部を設ける請求項１に記載の半導体光源モジ
ュールの製造方法である。[0013] The invention described in claim 4 of the present invention provides:
2. The method according to claim 1, wherein a boundary is provided between a substrate region on which the first light source chip and the second light source chip are attached. 3.
【００１４】これにより、例えば、加熱時に第１の半田
の流れを防止し、第２の半田と混ざらないようにするこ
とができる。Thus, for example, the flow of the first solder at the time of heating can be prevented so as not to mix with the second solder.
【００１５】また、本発明の請求項５に記載の発明は、
境界部は溝である請求項４に記載の半導体光源モジュー
ルの製造方法である。The invention according to claim 5 of the present invention provides:
The method according to claim 4, wherein the boundary is a groove.
【００１６】これにより、例えば、第１または第２の半
田が流れるのを防止することができる。This makes it possible to prevent the first or second solder from flowing, for example.
【００１７】また、本発明の請求項６に記載の発明は、
境界部は突起部である請求項４に記載の半導体光源モジ
ュールの製造方法である。[0017] The invention according to claim 6 of the present invention provides:
The method according to claim 4, wherein the boundary is a protrusion.
【００１８】これにより、例えば、第１または第２の半
田が流れるのを防止することができる。Thus, for example, the first or second solder can be prevented from flowing.
【００１９】また、本発明の請求項７に記載の発明は、
第１の光源チップと第２の光源チップの発光面は実質上
面一である請求項１に記載の半導体光源モジュールの製
造方法である。The invention according to claim 7 of the present invention provides:
2. The method according to claim 1, wherein the light emitting surfaces of the first light source chip and the second light source chip are substantially flush with each other.
【００２０】これにより、例えば、光学系の構成を容易
にすることができる。Thus, for example, the configuration of the optical system can be simplified.
【００２１】また、本発明の請求項８に記載の発明は、
第１の光源チップと第２の光源チップをそれぞれ配置す
る、基板上の第１、第２の領域をそれぞれ金属メッキし
た後、第１の半田を上記一方の領域に付け、上記第１の
半田より融点の低い第２の半田を、他方の領域に付け、
上記第１の半田を付けた領域を上記第１の半田の融点よ
り高く加熱して上記光源チップを付け、上記第２の半田
を付けた領域を第２の半田の融点より高く、上記第１の
半田の融点より低く加熱して、上記他方の光源チップを
付ける半導体光源モジュールの製造方法である。The invention according to claim 8 of the present invention provides:
After metal plating the first and second areas on the substrate, on which the first light source chip and the second light source chip are respectively arranged, a first solder is applied to the one area, and the first solder is applied. A second solder having a lower melting point is applied to the other area,
The region to which the first solder is applied is heated above the melting point of the first solder to attach the light source chip, and the region to which the second solder is attached is higher than the melting point of the second solder, And heating the solder to a temperature lower than the melting point of the solder to attach the other light source chip.
【００２２】これにより、例えば、半田の直接付かない
基板の上にも光源チップを付けることができる。Thus, for example, a light source chip can be mounted on a substrate to which solder is not directly attached.
【００２３】また、本発明の請求項９に記載の発明は、
第１の半田を付けた領域を上記第１の半田の融点より高
く加熱して光源チップを付ける工程は窒素雰囲気中で行
う請求項８に記載の半導体光源モジュールの製造方法で
ある。[0023] Further, the invention according to claim 9 of the present invention provides:
9. The method according to claim 8, wherein the step of heating the region to which the first solder is applied to a temperature higher than the melting point of the first solder to attach the light source chip is performed in a nitrogen atmosphere.
【００２４】これにより、例えば、融点の低い第２の半
田の酸化を防ぐことができる。Thus, for example, oxidation of the second solder having a low melting point can be prevented.
【００２５】また、本発明の請求項１０に記載の発明に
は、第１の光源チップ、第２の光源チップ、第３の光源
チップを同一基板上に配置する半導体光源モジュールの
製造行程において、第１の半田を用いて上記のチップの
１つを上記基板に付けた後、上記第１の半田より融点の
低い第２の半田を用いて、上記第２の半田の融点より高
く、上記第１の半田の融点より低く加熱して上記残りの
チップのうちの１つを上記基板に付け、その後、上記第
２の半田より融点の低い第３の半田を用いて、上記第３
の半田の融点より高く、上記第２の半田の融点より低く
加熱して上記残りのチップを上記基板に付けることを特
徴とする半導体光源モジュールの製造方法である。According to a tenth aspect of the present invention, in a manufacturing process of a semiconductor light source module in which a first light source chip, a second light source chip, and a third light source chip are arranged on the same substrate, After attaching one of the chips to the substrate using a first solder, using a second solder having a lower melting point than the first solder, using a second solder having a melting point higher than the melting point of the second solder, One of the remaining chips is attached to the substrate by heating below the melting point of the first solder, and then the third solder is melted using a third solder having a lower melting point than the second solder.
And heating the remaining chip to a temperature higher than the melting point of the second solder and lower than the melting point of the second solder to attach the remaining chip to the substrate.
【００２６】これにより、例えば互いに近傍に配置され
た３波長の光源を用いた、小型軽量で、複数の種類の情
報記録媒体に対応できる半導体光源モジュールの製造方
法を得ることができる。Thus, it is possible to obtain a method for manufacturing a semiconductor light source module which is small and lightweight and can be used for a plurality of types of information recording media, using, for example, three wavelength light sources arranged close to each other.
【００２７】また、本発明の請求項１１に記載の発明
は、第１の光源チップと第２の光源チップを同一基板上
に配置する半導体光源モジュールであって、第１の溶接
部材を用いて上記一方のチップを上記基板に付け、上記
第１の溶接部材より融点の低い第２の溶接部材を用い
て、上記第２の溶接部材の融点より高く、上記第１の溶
接部材の融点より低く加熱して上記他方のチップを上記
基板に付けたことを特徴とする半導体光源モジュールで
ある。According to an eleventh aspect of the present invention, there is provided a semiconductor light source module in which a first light source chip and a second light source chip are arranged on the same substrate, wherein a first welding member is used. The one chip is attached to the substrate, and a second welding member having a lower melting point than the first welding member is used, and is higher than the melting point of the second welding member and lower than the melting point of the first welding member. A semiconductor light source module wherein the other chip is attached to the substrate by heating.
【００２８】また、本発明の請求項１２に記載の発明
は、第１の光源チップ、第２の光源チップ、第３の光源
チップを同一基板上に配置する半導体光源モジュールで
あって、第１の溶接部材を用いて上記のチップの１つを
上記基板に付け、上記第１の溶接部材より融点の低い第
２の溶接部材を用いて、上記第２の溶接部材の融点より
高く、上記第１の溶接部材の融点より低く加熱して上記
残りのチップのうちの１つを上記基板に付け、上記第２
の溶接部材より融点の低い第３の溶接部材を用いて、上
記第３の溶接部材の融点より高く、上記第２の溶接部材
の融点より低く加熱して上記残りのチップを上記基板に
付けたを特徴とする半導体光源モジュールである。According to a twelfth aspect of the present invention, there is provided a semiconductor light source module in which a first light source chip, a second light source chip, and a third light source chip are arranged on the same substrate. One of the chips is attached to the substrate using a welding member of the above, and a second welding member having a lower melting point than the first welding member is used, and the melting point of the second chip is higher than the melting point of the second welding member. One of the remaining chips is heated to a temperature lower than the melting point of the first welding member, and one of the remaining chips is attached to the substrate.
Using a third welding member having a lower melting point than the above welding member, the remaining chip was attached to the substrate by heating above the melting point of the third welding member and lower than the melting point of the second welding member. A semiconductor light source module characterized by the following.
【００２９】[0029]
【発明の実施の形態】（実施の形態１）本発明の第１の
実施の形態の半導体光源モジュールの製造方法につい
て、図１を用い、座標軸を図のようにとって詳細に説明
する。(Embodiment 1) A method of manufacturing a semiconductor light source module according to a first embodiment of the present invention will be described in detail with reference to FIGS.
【００３０】図１（ａ）〜（ｃ１）は本発明の第１の実
施の形態における半導体光源モジュールの製造方法を示
す側面図、図１（ｃ２）は、本発明の第１の実施の形態
における半導体光源モジュールを示す斜視図である。FIGS. 1A to 1C are side views showing a method of manufacturing a semiconductor light source module according to a first embodiment of the present invention, and FIG. 1C2 is a first embodiment of the present invention. It is a perspective view which shows the semiconductor light source module in FIG.
【００３１】本実施の形態の半導体光源モジュールの製
造方法は、互いに近傍に配置された２波長の光源を搭載
し、例えば、ＤＶＤやＣＤ、ＣＤ−Ｒ等の複数の情報記
録媒体に対応できる小型・薄型・軽量の半導体光源モジ
ュールの製造方法を実現する。The method for manufacturing a semiconductor light source module according to the present embodiment is equipped with a two-wavelength light source disposed close to each other, and is, for example, a compact type capable of supporting a plurality of information recording media such as DVDs, CDs, and CD-Rs. -A method for manufacturing a thin and light semiconductor light source module is realized.
【００３２】図１に示すように、まず、例えば、銅等の
基板１上に、例えば、波長λ1＝０．８μｍの第１の光
源チップ２（例えば、ｘ方向の幅２００μｍ、ｙ方向の
長さ２５０μｍ）を第１の半田４を用いて、例えば、３
００℃に加熱して接着する。第１の光源チップ２を接着
した近傍（例えば、チップの中心位置が４００μｍ離れ
た位置）に、その後、波長λ2＝０．６６μｍの第２の
光源チップ３（例えば、ｘ方向の幅３５０μｍ、ｙ方向
の長さ３５０μｍ）を第２の半田５を用いて、例えば、
２００℃に加熱して接着する。As shown in FIG. 1, first, a first light source chip 2 having a wavelength of λ 1 = 0.8 μm (for example, a width of 200 μm in the x direction and a width of 200 μm in the y direction) is formed on a substrate 1 of, for example, copper. Using the first solder 4, for example,
Heat to 00 ° C to bond. A second light source chip 3 having a wavelength λ 2 = 0.66 μm (for example, a width of 350 μm in the x direction, in the vicinity of where the first light source chip 2 is bonded (for example, a position where the center position of the chip is 400 μm apart)) Using the second solder 5, for example, a length of 350 μm in the y direction
Heat to 200 ° C to bond.
【００３３】本発明者らは、第１の光源チップ２を高融
点半田４を用いて固定した後、低融点半田５を用いて第
２の光源チップ３を固定することにより、最初のチップ
の位置はずれないで２つのチップを近傍に高精度で固定
することが可能であり、その結果小型化可能な２波長Ｌ
Ｄ光源モジュールを製造することができることを見出し
た。The present inventors fix the first light source chip 2 using the high melting point solder 4 and then fix the second light source chip 3 using the low melting point solder 5 so that It is possible to fix the two chips close to each other with high precision without shifting the position, and as a result, the two wavelengths L that can be miniaturized
It has been found that a D light source module can be manufactured.
【００３４】本実施の形態で第２の半田として、鉛３７
％、錫６３％の共晶点のものを用い、このときの融点は
１８２℃であった。第１の半田として、錫の量を６３％
からずらせることにより融点を高くした。また、第２の
半田としてインジウムを用いても良く、この場合は融点
が１５６℃であり、さらに融点を下げることができる。In this embodiment, lead 37 is used as the second solder.
% And tin having a eutectic point of 63%, and the melting point was 182 ° C. 63% of tin as first solder
Melting increased the melting point. Further, indium may be used as the second solder. In this case, the melting point is 156 ° C., and the melting point can be further reduced.
【００３５】本実施の形態では、図１（ｃ２）で示して
いるように、第１の光源チップ２と第２の光源チップ３
の発光面は実質上、面一になるように配置し、また、基
板１の端部にそろえて配置している。このような配置で
は、光学ヘッドの光学系が簡単になり、また、光源チッ
プ２、３から基板１への熱伝導が良く、また、発光部か
らの出射光６、７のけられがなくなる。In the present embodiment, as shown in FIG. 1 (c2), the first light source chip 2 and the second light source chip 3
Are arranged so as to be substantially flush with each other, and are aligned with the end of the substrate 1. In such an arrangement, the optical system of the optical head is simplified, the heat conduction from the light source chips 2 and 3 to the substrate 1 is good, and the emitted lights 6 and 7 from the light emitting section are not shaken.
【００３６】また、本実施の形態では、波長が大きい方
の光源チップを第１の光源チップとして説明したが、波
長が小さい方の光源チップを第１の光源チップとしても
良い。Further, in the present embodiment, the light source chip having the larger wavelength is described as the first light source chip, but the light source chip having the smaller wavelength may be used as the first light source chip.
【００３７】（実施の形態２）本発明の第２の実施の形
態の半導体光源モジュールの製造方法について、図２を
用いて、上記第１の実施の形態と異なる点を中心に説明
する。(Embodiment 2) A method of manufacturing a semiconductor light source module according to a second embodiment of the present invention will be described with reference to FIG. 2, focusing on differences from the first embodiment.
【００３８】図２（ａ）〜（ｃ１）は本発明の第２の実
施の形態における半導体光源モジュールの製造方法を示
す側面図、図２（ｃ２）は、本発明の第２の実施の形態
における半導体光源モジュールを示す斜視図である。FIGS. 2A to 2C are side views showing a method for manufacturing a semiconductor light source module according to a second embodiment of the present invention, and FIG. 2C2 is a second embodiment of the present invention. It is a perspective view which shows the semiconductor light source module in FIG.
【００３９】図２に示すように、本実施の形態の半導体
光源モジュールの製造方法においては、溝８のある基板
１ａを用いた。As shown in FIG. 2, in the method of manufacturing a semiconductor light source module according to the present embodiment, a substrate 1a having a groove 8 was used.
【００４０】第１の光源チップ２を接着する際に、第１
の半田４を加熱する工程で、第１の半田４が、第２の光
源チップ３を接着する領域まで流れることが、たまに生
じた。When bonding the first light source chip 2,
In the step of heating the solder 4, the first solder 4 sometimes flows to the region where the second light source chip 3 is bonded.
【００４１】本発明者らは、第１の光源チップ２と第２
の光源チップ３の境界部に溝８を設けることにより、こ
のような第１の半田４の流れが防止できることを見出し
た。この理由としては、この溝８を設けたことにより、
半田４の表面張力を維持できるものと考えている。ま
た、この溝８は、突起部等の他の境界部であっても同様
の効果が得られることも見出した。The present inventors have proposed a first light source chip 2 and a second light source chip 2.
It has been found that the flow of the first solder 4 can be prevented by providing the groove 8 at the boundary of the light source chip 3. The reason for this is that the groove 8 is provided,
It is considered that the surface tension of the solder 4 can be maintained. It has also been found that the same effect can be obtained in the groove 8 even at another boundary such as a protrusion.
【００４２】（実施の形態３）本発明の第３の実施の形
態の半導体光源モジュールの製造方法について、図３を
用いて、上記第１の実施の形態と異なる点を中心に説明
する。(Embodiment 3) A method of manufacturing a semiconductor light source module according to a third embodiment of the present invention will be described with reference to FIG. 3, focusing on differences from the first embodiment.
【００４３】図３（ａ）〜（ｃ１）は本発明の第３の実
施の形態における半導体光源モジュールの製造方法を示
す側面図、図３（ｃ２）は、本発明の第３の実施の形態
における半導体光源モジュールを示す斜視図である。FIGS. 3A to 3C are side views showing a method for manufacturing a semiconductor light source module according to the third embodiment of the present invention, and FIG. 3C2 is a third embodiment of the present invention. It is a perspective view which shows the semiconductor light source module in FIG.
【００４４】図３に示すように、本実施の形態の半導体
光源モジュールの製造方法においては、基板として（１
１１）のシリコン基板１ｂを用い、異方性エッチングに
より、基板中央部に凹部１１を形成し、また、凹部１１
の中央部にｙ軸方向にさらに異方性エッチングにより溝
８ａを形成している。As shown in FIG. 3, in the method of manufacturing a semiconductor light source module according to the present embodiment, (1
Using the silicon substrate 1b of 11), a recess 11 is formed in the center of the substrate by anisotropic etching.
A groove 8a is further formed in the central portion by anisotropic etching in the y-axis direction.
【００４５】まず、凹部１１の光源チップ２、３が接着
される部分に、半田付けができるように、例えば、１２
μｍの厚さだけ金等の金属メッキをした。この後、その
上に、第１の半田４、それより融点の低い第２の半田５
をクリーム状にして塗布した。その後、窒素雰囲気にし
て、第１の半田４上に第１の光源チップ２を載せて、例
えば、３００℃に加熱した。加熱の際には、第２の半田
５も加熱されて液体状になっているが、窒素雰囲気にす
ることにより、酸化は防止できた。その後、同様に、第
２の光源チップ３を載せて、例えば、２００℃に加熱処
理をして接着した。First, for example, a 12 is bonded to the portion of the recess 11 to which the light source chips 2 and 3 are bonded so that soldering can be performed.
Metal plating such as gold was performed to a thickness of μm. Thereafter, a first solder 4 and a second solder 5 having a lower melting point than the first solder 4 are formed thereon.
Was applied in the form of a cream. Thereafter, the first light source chip 2 was placed on the first solder 4 in a nitrogen atmosphere, and heated to, for example, 300 ° C. At the time of heating, the second solder 5 was also heated to be in a liquid state, but by setting it in a nitrogen atmosphere, oxidation could be prevented. After that, similarly, the second light source chip 3 was mounted thereon, and was heated at, for example, 200 ° C. and bonded.
【００４６】本実施の形態では、異方性エッチングによ
り形成した斜面１２を両方の光源チップ２、３の共通の
ミラーとして使用し、製造方法を簡単化することができ
た。また、基板１ｂの両端部に光検出器１０ａ、１０ｂ
を集積して設けることにより、一層の構成の簡単化を図
ることができた。In the present embodiment, the slope 12 formed by anisotropic etching is used as a common mirror for both the light source chips 2 and 3, and the manufacturing method can be simplified. Further, photodetectors 10a and 10b are provided at both ends of the substrate 1b.
By integrating them, it was possible to further simplify the configuration.
【００４７】以上説明した、実施の形態は、半導体光源
モジュールは２つの波長の場合についてではあるが、波
長が青色、赤、赤外のような３つの波長の場合でも効果
がある。すなわち、第１の光源チップ、第２の光源チッ
プ、第３の光源チップを同一基板上に配置する半導体光
源モジュールの製造行程において、第１の半田を用いて
上記のチップの１つを上記基板に付けた後、上記第１の
半田より融点の低い第２の半田を用いて、上記第２の半
田の融点より高く、上記第１の半田の融点より低く加熱
して上記残りのチップのうちの１つを上記基板に付け、
その後、上記第２の半田より融点の低い第３の半田を用
いて、上記第３の半田の融点より高く、上記第２の半田
の融点より低く加熱して上記残りのチップを上記基板に
付けることを特徴とする半導体光源モジュールの製造方
法である。Although the embodiments described above are for the case where the semiconductor light source module has two wavelengths, the present invention is also effective when the wavelengths are three wavelengths such as blue, red and infrared. That is, in a manufacturing process of a semiconductor light source module in which a first light source chip, a second light source chip, and a third light source chip are arranged on the same substrate, one of the chips is connected to the substrate by using a first solder. Then, using a second solder having a melting point lower than that of the first solder, the second chip is heated to a temperature higher than the melting point of the second solder and lower than the melting point of the first solder. Is attached to the substrate,
After that, using a third solder having a lower melting point than the second solder, heating is performed to be higher than the melting point of the third solder and lower than the melting point of the second solder to attach the remaining chips to the substrate. A method for manufacturing a semiconductor light source module, characterized in that:
【００４８】このような製造方法によって、各光源位置
精度の高い半導体レーザーモジュールを安価に大量に生
産することができる。According to such a manufacturing method, it is possible to mass-produce the semiconductor laser modules with high accuracy of each light source position at low cost.
【００４９】なお、実施の形態は光ディスクで説明した
が、同様の情報記録再生装置で厚みや記録密度など複数
の仕様の異なる媒体を再生できるように設計されたカー
ド状やドラム状、テープ状の製品や、光通信などの多光
源モジュールチップに応用することは本発明の範囲であ
る。Although the embodiment has been described with reference to an optical disk, a card-shaped, drum-shaped, or tape-shaped medium designed to be able to reproduce a plurality of media having different specifications such as thickness and recording density with a similar information recording / reproducing apparatus. It is within the scope of the present invention to apply the present invention to products and multi-source module chips for optical communication and the like.
【００５０】また、本願発明の主旨から溶接手段は、通
常の半田に限定されず、その材料の混合比や添加材料等
によって融点の変えられる導電性溶接材料で且つ５００
℃以下の比較的融点の低いものであれば、錫９０〜９９
％、銀３〜５％、銅１％以下の合金や、錫と銅の合金お
よび融点制御のためにインジウム等の添加物を加えたも
の等どのようなものであっても適応可能である。Further, the welding means is not limited to ordinary solder from the gist of the present invention, and is a conductive welding material whose melting point can be changed by a mixing ratio of the materials, an additive material, and the like.
If the melting point is relatively low below 90 ° C, tin 90-99
%, Silver 3 to 5%, copper 1% or less, an alloy of tin and copper, and a material to which an additive such as indium is added for controlling the melting point can be applied.
【００５１】[0051]
【発明の効果】以上説明したように、本発明によれば、
一方の光源チップを高融点半田を用いて固定した後、低
融点半田を用いてもう一方のチップを固定することによ
り、最初のチップの位置はずれないで２つのチップを近
傍に高精度で固定することが可能であり、小型化可能な
複数波長レーザの半導体光源モジュールを製造すること
ができる。As described above, according to the present invention,
After fixing one light source chip using high melting point solder and fixing the other chip using low melting point solder, the two chips are fixed with high precision in the vicinity without displacing the position of the first chip. It is possible to manufacture a semiconductor light source module of a multi-wavelength laser that can be miniaturized.
【図１】本発明の第１の実施の形態における半導体光源
モジュールの製造方法を示す側面図、斜視図FIG. 1 is a side view and a perspective view showing a method for manufacturing a semiconductor light source module according to a first embodiment of the present invention.
【図２】本発明の第２の実施の形態における半導体光源
モジュールの製造方法を示す側面図、斜視図FIG. 2 is a side view and a perspective view showing a method for manufacturing a semiconductor light source module according to a second embodiment of the present invention.
【図３】本発明の第３の実施の形態における半導体光源
モジュールの製造方法を示す側面図、斜視図FIG. 3 is a side view and a perspective view showing a method for manufacturing a semiconductor light source module according to a third embodiment of the present invention.
【図４】従来の製造方法を説明するための半導体光源モ
ジュールの斜視図FIG. 4 is a perspective view of a semiconductor light source module for explaining a conventional manufacturing method.
１ 基板 ２ 第１の光源チップ ３ 第２の光源チップ ４ 第１の半田 ５ 第２の半田 ８ 溝 ９ 金属 １０ 光検出器 １１ 異方性エッチングにより形成された凹部 １２ ミラー REFERENCE SIGNS LIST 1 substrate 2 first light source chip 3 second light source chip 4 first solder 5 second solder 8 groove 9 metal 10 photodetector 11 concave portion formed by anisotropic etching 12 mirror
Claims (12)
一基板上に配置する半導体光源モジュールの製造工程に
おいて、第１の溶接部材を用いて上記一方のチップを上
記基板に付けた後、上記第１の溶接部材より融点の低い
第２の溶接部材を用いて、上記第２の溶接部材の融点よ
り高く、上記第１の溶接部材の融点より低く加熱して上
記他方のチップを上記基板に付けることを特徴とする半
導体光源モジュールの製造方法。In a manufacturing process of a semiconductor light source module in which a first light source chip and a second light source chip are arranged on the same substrate, after the one chip is attached to the substrate using a first welding member. Using a second welding member having a lower melting point than the first welding member, heating the second chip higher than the melting point of the second welding member and lower than the melting point of the first welding member to heat the other chip. A method for manufacturing a semiconductor light source module, which is provided on a substrate.
ングにより形成された凹部に第１及び第２の光源チップ
を付ける請求項１に記載の半導体光源モジュールの製造
方法。2. The method according to claim 1, wherein the substrate is a silicon crystal, and the first and second light source chips are attached to concave portions formed by anisotropic etching.
傾斜面を、第１の光源チップと第２の光源チップのそれ
ぞれの出射光の共通のミラーとする請求項１に記載の半
導体光源モジュールの製造方法。3. The semiconductor light source module according to claim 1, wherein the inclined surface of the concave portion formed by the anisotropic etching is used as a common mirror for the respective emitted lights of the first light source chip and the second light source chip. Manufacturing method.
ける基板領域の間に境界部を設ける請求項１に記載の半
導体光源モジュールの製造方法。4. The method for manufacturing a semiconductor light source module according to claim 1, wherein a boundary portion is provided between a substrate region on which the first light source chip and the second light source chip are attached.
光源モジュールの製造方法。5. The method according to claim 4, wherein the boundary is a groove.
導体光源モジュールの製造方法。6. The method according to claim 4, wherein the boundary is a protrusion.
光面は実質上面一である請求項１に記載の半導体光源モ
ジュールの製造方法。7. The method according to claim 1, wherein the light emitting surfaces of the first light source chip and the second light source chip are substantially flush with each other.
れぞれ配置する、基板上の第１、第２の領域をそれぞれ
金属メッキした後、第１の溶接部材を上記一方の領域に
付け、上記第１の溶接部材より融点の低い第２の溶接部
材を、他方の領域に付け、上記第１の溶接部材を付けた
領域を上記第１の溶接部材の融点より高く加熱して上記
光源チップを付け、上記第２の溶接部材を付けた領域を
第２の溶接部材の融点より高く、上記第１の溶接部材の
融点より低く加熱して、上記他方の光源チップを付ける
半導体光源モジュールの製造方法。8. After the first and second regions on the substrate on which the first light source chip and the second light source chip are respectively disposed are metal-plated, a first welding member is attached to the one region. A second welding member having a lower melting point than the first welding member is attached to the other region, and the region to which the first welding member is attached is heated to a temperature higher than the melting point of the first welding member, and the light source is heated. A semiconductor light source module to which a chip is attached and a region where the second welding member is attached is heated above the melting point of the second welding member and below the melting point of the first welding member to attach the other light source chip. Production method.
溶接部材の融点より高く加熱して光源チップを付ける工
程は窒素雰囲気中で行う請求項８に記載の半導体光源モ
ジュールの製造方法。9. The semiconductor light source module according to claim 8, wherein the step of heating the region where the first welding member is attached to a temperature higher than the melting point of the first welding member to attach the light source chip is performed in a nitrogen atmosphere. Method.
第３の光源チップを同一基板上に配置する半導体光源モ
ジュールの製造行程において、第１の溶接部材を用いて
上記のチップの１つを上記基板に付けた後、上記第１の
溶接部材より融点の低い第２の溶接部材を用いて、上記
第２の溶接部材の融点より高く、上記第１の溶接部材の
融点より低く加熱して上記残りのチップのうちの１つを
上記基板に付け、その後、上記第２の溶接部材より融点
の低い第３の溶接部材を用いて、上記第３の溶接部材の
融点より高く、上記第２の溶接部材の融点より低く加熱
して上記残りのチップを上記基板に付けることを特徴と
する半導体光源モジュールの製造方法。10. A first light source chip, a second light source chip,
In the manufacturing process of the semiconductor light source module in which the third light source chip is disposed on the same substrate, one of the chips is attached to the substrate by using the first welding member, and then the melting point is higher than the first welding member. Using a lower second welding member, heating above the melting point of the second welding member and lower than the melting point of the first welding member to attach one of the remaining chips to the substrate, Thereafter, using a third welding member having a lower melting point than the second welding member, the remaining chip is heated by heating higher than the melting point of the third welding member and lower than the melting point of the second welding member. A method for manufacturing a semiconductor light source module, wherein the method is attached to the substrate.
同一基板上に配置する半導体光源モジュールであって、
第１の溶接部材を用いて上記一方のチップを上記基板に
付け、上記第１の溶接部材より融点の低い第２の溶接部
材を用いて、上記第２の溶接部材の融点より高く、上記
第１の溶接部材の融点より低く加熱して上記他方のチッ
プを上記基板に付けたことを特徴とする半導体光源モジ
ュール。11. A semiconductor light source module in which a first light source chip and a second light source chip are arranged on a same substrate,
The one chip is attached to the substrate using a first welding member, and a second welding member having a lower melting point than the first welding member is used. The second chip has a melting point higher than the melting point of the second welding member. A semiconductor light source module wherein the other chip is attached to the substrate by heating it below the melting point of the first welding member.
第３の光源チップを同一基板上に配置する半導体光源モ
ジュールであって、第１の溶接部材を用いて上記のチッ
プの１つを上記基板に付け、上記第１の溶接部材より融
点の低い第２の溶接部材を用いて、上記第２の溶接部材
の融点より高く、上記第１の溶接部材の融点より低く加
熱して上記残りのチップのうちの１つを上記基板に付
け、上記第２の溶接部材より融点の低い第３の溶接部材
を用いて、上記第３の溶接部材の融点より高く、上記第
２の溶接部材の融点より低く加熱して上記残りのチップ
を上記基板に付けたを特徴とする半導体光源モジュー
ル。12. A first light source chip, a second light source chip,
A semiconductor light source module in which a third light source chip is disposed on the same substrate, wherein one of the chips is attached to the substrate using a first welding member, and the third light source chip has a lower melting point than the first welding member. The second welding member is heated above the melting point of the second welding member and below the melting point of the first welding member, and one of the remaining chips is attached to the substrate. Using a third welding member having a lower melting point than the above welding member, the remaining chip was attached to the substrate by heating above the melting point of the third welding member and lower than the melting point of the second welding member. A semiconductor light source module characterized by the above-mentioned.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11071466A JP2000268387A (en) | 1999-03-17 | 1999-03-17 | Semiconductor light source module manufacturing method and semiconductor light source module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11071466A JP2000268387A (en) | 1999-03-17 | 1999-03-17 | Semiconductor light source module manufacturing method and semiconductor light source module |
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| Publication Number | Publication Date |
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| JP2000268387A true JP2000268387A (en) | 2000-09-29 |
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| JP11071466A Pending JP2000268387A (en) | 1999-03-17 | 1999-03-17 | Semiconductor light source module manufacturing method and semiconductor light source module |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008034530A (en) * | 2006-07-27 | 2008-02-14 | Stanley Electric Co Ltd | LED package, light emitting device using the same, and method of manufacturing LED package |
| US20180130779A1 (en) * | 2016-04-15 | 2018-05-10 | Glo Ab | Method of forming an array of a multi-device unit cell |
| JP2019087656A (en) * | 2017-11-08 | 2019-06-06 | 三菱電機株式会社 | Optical module and method of manufacturing the same |
| JP2020004978A (en) * | 2014-12-19 | 2020-01-09 | グロ アーベーＧｌｏ Ａｂ | Method of forming light emission diode array on back plane |
-
1999
- 1999-03-17 JP JP11071466A patent/JP2000268387A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008034530A (en) * | 2006-07-27 | 2008-02-14 | Stanley Electric Co Ltd | LED package, light emitting device using the same, and method of manufacturing LED package |
| JP2020004978A (en) * | 2014-12-19 | 2020-01-09 | グロ アーベーＧｌｏ Ａｂ | Method of forming light emission diode array on back plane |
| US20180130779A1 (en) * | 2016-04-15 | 2018-05-10 | Glo Ab | Method of forming an array of a multi-device unit cell |
| US10553571B2 (en) * | 2016-04-15 | 2020-02-04 | Glo Ab | Method of forming an array of a multi-device unit cell |
| JP2019087656A (en) * | 2017-11-08 | 2019-06-06 | 三菱電機株式会社 | Optical module and method of manufacturing the same |
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