JP2000268638A - Transparent conductive film and field emission display element - Google Patents
Transparent conductive film and field emission display elementInfo
- Publication number
- JP2000268638A JP2000268638A JP11073984A JP7398499A JP2000268638A JP 2000268638 A JP2000268638 A JP 2000268638A JP 11073984 A JP11073984 A JP 11073984A JP 7398499 A JP7398499 A JP 7398499A JP 2000268638 A JP2000268638 A JP 2000268638A
- Authority
- JP
- Japan
- Prior art keywords
- transparent conductive
- conductive film
- anode
- zno
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims abstract description 33
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 32
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims 1
- 230000002829 reductive effect Effects 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 abstract 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 12
- 238000006722 reduction reaction Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910007541 Zn O Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Non-Insulated Conductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、表示素子の陽極導
体として有用な透明導電膜と、係る透明導電膜を陽極導
体に使用した電界放出形表示素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transparent conductive film useful as an anode conductor of a display device, and a field emission display device using the transparent conductive film as an anode conductor.
【０００２】[0002]
【従来の技術】ＦＥＤ(Field Emission Display)は、内
部が高真空状態とされた薄型パネル状の外囲器を有して
いる。この外囲器は、陰極基板と陽極基板を微小な間隔
をおいて対面させ、両基板の各外周の間にスペーサ部材
を設けて封着した構造となっている。陽極基板の内面に
は、陽極導体と該陽極導体の表面に設けられた蛍光体層
からなる陽極が設けられている。陰極基板の内面には電
子放出源として電界放出素子からなる陰極が設けられて
いる。電界放出素子は、陰極基板の内面に設けられた陰
極導体と、陰極導体に設けられたコーン形状のエミッタ
と、エミッタの先端に近接して設けられたゲート電極を
有している。陰極導体とゲート電極は絶縁層で絶縁され
ている。2. Description of the Related Art An FED (Field Emission Display) has a thin panel-shaped envelope whose inside is in a high vacuum state. This envelope has a structure in which a cathode substrate and an anode substrate face each other at a small interval, and a spacer member is provided between the outer peripheries of the two substrates to seal them. On the inner surface of the anode substrate, an anode composed of an anode conductor and a phosphor layer provided on the surface of the anode conductor is provided. On the inner surface of the cathode substrate, a cathode composed of a field emission device is provided as an electron emission source. The field emission device has a cathode conductor provided on the inner surface of the cathode substrate, a cone-shaped emitter provided on the cathode conductor, and a gate electrode provided near the tip of the emitter. The cathode conductor and the gate electrode are insulated by an insulating layer.
【０００３】蛍光体層の発光は、陽極と陽極基板を通し
て陽極基板の外側から観察する。従って、陽極と陽極基
板は透光性の材料から構成されている。例えば陽極基板
はガラス基板からなり、陽極導体はＩＴＯ(Indium Tin
Oxide)等の透明導電膜によって構成される。Light emission from the phosphor layer is observed from outside the anode substrate through the anode and the anode substrate. Therefore, the anode and the anode substrate are made of a translucent material. For example, the anode substrate is made of a glass substrate, and the anode conductor is made of ITO (Indium Tin).
Oxide).
【０００４】[0004]
【発明が解決しようとする課題】前記ＦＥＤの製造工程
においては、外囲器の内部を高真空状態に排気した後に
高温の還元性ガスを導入して還元反応が起きやすい雰囲
気をつくり、電子を放出するエミッタの先端部が酸化し
ないようにしている。In the manufacturing process of the FED, the inside of the envelope is evacuated to a high vacuum state, and then a high-temperature reducing gas is introduced to create an atmosphere in which a reduction reaction is likely to occur. The tip of the emitting emitter is not oxidized.
【０００５】しかしながら、このように外囲器内を還元
性雰囲気にすると、陽極導体の透明導電膜を構成してい
るＩＴＯのような金属酸化物が還元されてしまうという
問題がある。ＩＴＯが還元されると、金属Ｉｎが析出し
て蒸発し、外囲器内で他の電極に付着して絶縁不良を発
生させてしまう。[0005] However, if the inside of the envelope is made to have a reducing atmosphere, there is a problem that the metal oxide such as ITO constituting the transparent conductive film of the anode conductor is reduced. When the ITO is reduced, the metal In precipitates and evaporates, and adheres to another electrode in the envelope to cause insulation failure.
【０００６】本発明は、還元雰囲気に耐えて透光性と導
電性を維持することができ、従ってＦＥＤの陽極導体と
して有用である透明導電膜を提供することを第１の目的
としている。また、本発明は、かかる透明導電膜を陽極
導体として有しているＦＥＤを提供することを第２の目
的としている。SUMMARY OF THE INVENTION It is a first object of the present invention to provide a transparent conductive film that can withstand a reducing atmosphere and maintain light transmission and conductivity, and is therefore useful as an anode conductor of an FED. A second object of the present invention is to provide an FED having such a transparent conductive film as an anode conductor.
【０００７】[0007]
【課題を解決するための手段】請求項１に記載された透
明導電膜（陽極導体５）は、気密容器（外囲器２）の内
面に形成され、ＺｎＯを含むことを特徴としている。The transparent conductive film (anode conductor 5) described in claim 1 is formed on the inner surface of an airtight container (envelope 2) and contains ZnO.
【０００８】請求項２に記載された透明導電膜は、請求
項１記載の透明導電膜において、前記透明導電膜（陽極
導体５）が多層構造になっており、前記ＺｎＯが少なく
とも表面の一部（第２層９）に含まれていることを特徴
としている。According to a second aspect of the present invention, in the transparent conductive film according to the first aspect, the transparent conductive film (anode conductor 5) has a multilayer structure, and the ZnO is at least part of the surface. (Second layer 9).
【０００９】請求項３に記載された透明導電膜は、請求
項２記載の透明導電膜において、前記ＺｎＯが含まれて
いる層（第２層９）以外の層（第１層８）が、ＩｎとＳ
ｎから選択された元素の化合物（ＩＴＯ、ＳｎＯ2 ）を
含んでいることを特徴としている。In the transparent conductive film according to a third aspect, in the transparent conductive film according to the second aspect, a layer (first layer 8) other than the layer (second layer 9) containing ZnO is: In and S
It is characterized by containing a compound of an element selected from n (ITO, SnO 2 ).
【００１０】請求項４に記載された透明導電膜は、請求
項３記載の透明導電膜において、前記Ｉｎの化合物がIn
dium Tin Oxideであり、前記Ｓｎの化合物がＳｎＯ2 で
あることを特徴としている。The transparent conductive film described in claim 4 is the transparent conductive film according to claim 3, wherein the compound of In is In.
dium Tin Oxide, wherein the Sn compound is SnO 2 .
【００１１】請求項５に記載された透明導電膜は、請求
項１又は２又は３又は４記載の透明導電膜において、前
記ＺｎＯにＡｌがドープされていることを特徴としてい
る。According to a fifth aspect of the present invention, there is provided the transparent conductive film according to the first, second, third, or fourth aspect, wherein the ZnO is doped with Al.
【００１２】請求項６に記載された透明導電膜は、請求
項５記載の透明導電膜において、前記透明導電膜（陽極
導体５）が形成されている気密容器（外囲器２）の内面
が非晶質の物質からなり、前記透明導電膜がＣ軸配向し
たウルツ鉱構造の多結晶薄膜であることを特徴としてい
る。According to a sixth aspect of the present invention, there is provided the transparent conductive film according to the fifth aspect, wherein the inner surface of the airtight container (the envelope 2) on which the transparent conductive film (the anode conductor 5) is formed. It is characterized in that the transparent conductive film is a polycrystalline thin film having a wurtzite structure in which the transparent conductive film is made of an amorphous material and has a C-axis orientation.
【００１３】請求項７に記載された電界放出形表示素子
（ＦＥＤ１）は、透光性の陽極基板（４）と、前記陽極
基板の内面に形成された透明導電膜（第１層８、第２層
９）からなる陽極導体（５）と、前記陽極導体に形成さ
れた蛍光体層（６）と、前記陽極基板に所定間隔をおい
て対面するように配置された陰極基板（３）と、前記陰
極基板の内面に形成された電界放出素子（１０）とを有
する電界放出形表示素子であり、前記透明導電膜（第２
層９）がＺｎＯを含むことを特徴としている。According to a seventh aspect of the present invention, there is provided a field emission display device (FED1) comprising a light-transmitting anode substrate (4) and a transparent conductive film (first layer 8, first layer 8) formed on the inner surface of the anode substrate. An anode conductor (5) composed of two layers 9), a phosphor layer (6) formed on the anode conductor, and a cathode substrate (3) arranged to face the anode substrate at a predetermined interval. And a field emission device (10) formed on the inner surface of the cathode substrate.
The layer 9) is characterized by containing ZnO.
【００１４】[0014]
【発明の実施の形態】図１に本例のＦＥＤ１(Field Emi
ssion Display)の断面図を示す。ＦＥＤ１は、内部が高
真空状態とされた薄型パネル状の外囲器２を有してい
る。この外囲器２は、陰極基板３と陽極基板４を微小な
間隔をおいて対面させ、両基板３，４の各外周の間に図
示しないスペーサ部材（封着剤）を設けて封着した構造
となっている。両基板３，４は非晶質のガラス製であ
り、透光性を有する。FIG. 1 shows an FED 1 (Field Emi) of this embodiment.
FIG. The FED 1 has a thin panel-shaped envelope 2 whose inside is in a high vacuum state. In the envelope 2, the cathode substrate 3 and the anode substrate 4 face each other at a small interval, and a sealing member (not shown) is provided between the outer peripheries of the substrates 3 and 4 for sealing. It has a structure. Both substrates 3 and 4 are made of amorphous glass and have translucency.
【００１５】この外囲器２において、陽極基板４の内面
には、陽極導体５と、該陽極導体５の表面に設けられた
蛍光体層６からなる陽極７が設けられている。従来の陽
極導体は、ＩＴＯ等の透明導電膜の１層構造であった
が、本発明の陽極導体５は複数種類の材質からなる多層
構造であり、本例では一例として２層構造を採用した。
具体的には、陽極基板４の内面に接している第１層８が
ＩＴＯであり、その上を被覆している第２層９がＺｎ
Ｏ：Ａｌからなる。In the envelope 2, an anode conductor 5 and an anode 7 composed of a phosphor layer 6 provided on the surface of the anode conductor 5 are provided on the inner surface of the anode substrate 4. The conventional anode conductor has a one-layer structure of a transparent conductive film such as ITO, but the anode conductor 5 of the present invention has a multilayer structure composed of a plurality of types of materials. In this example, a two-layer structure is employed as an example. .
Specifically, the first layer 8 in contact with the inner surface of the anode substrate 4 is ITO, and the second layer 9 covering the first layer 8 is Zn.
O: made of Al.
【００１６】ＺｎＯは透光性と導電性を有し、また酸化
物として安定しているために還元性雰囲気下でも還元さ
れにくい性質（耐還元性）をもつ。特に本例のＺｎＯは
Ａｌが適量添加されているので透光性と導電性に優れて
いる。透光性が高いために、膜厚に余裕があり、厚くし
ても蛍光体の視認に悪影響を及ぼさない。[0016] ZnO has translucency and conductivity, and has a property (reduction resistance) that is hardly reduced even in a reducing atmosphere because it is stable as an oxide. Particularly, ZnO of this example is excellent in light transmission and conductivity because Al is added in an appropriate amount. Since the light-transmitting property is high, there is a margin in the film thickness, and even if the film thickness is large, the visibility of the phosphor is not adversely affected.
【００１７】ＺｎＯは広い光学的バンドギャップを有
し、ガラス等の非晶質の基板上に作製した場合、一般的
にＣ軸配向したウルツ鉱構造の多結晶薄膜となり、導電
性を上げるためにＡｌ等の不純物をドープする。ZnO has a wide optical band gap. When fabricated on an amorphous substrate such as glass, ZnO generally becomes a polycrystalline thin film having a wurtzite structure with a C-axis orientation. An impurity such as Al is doped.
【００１８】本例で使用しているＺｎＯ：Ａｌの透光性
及び導電性の向上のためには、Ａｌ等の不純物のドープ
とともに化学量論的組成の制御が重要である。ＺｎＯ：
Ａｌの薄膜はマグネトロンスパッタ法で製作できるが、
この方法ではスパッタ時の酸素導入量の制御によって化
学量論的組成の制御を行う場合と、Ｚｎ金属ターゲット
のスパッタ量によって同制御を行う場合がある。In order to improve the translucency and conductivity of ZnO: Al used in this embodiment, it is important to control the stoichiometric composition together with the doping of impurities such as Al. ZnO:
Al thin films can be manufactured by magnetron sputtering,
In this method, the stoichiometric composition is controlled by controlling the amount of oxygen introduced during sputtering, and the same control is performed depending on the amount of sputtering of the Zn metal target.
【００１９】次に、本例のＦＥＤ１において、外囲器２
を構成する陰極基板３の内面には、電子源である陰極と
して、電界放出素子１０が設けられている。電界放出素
子１０は、陰極基板３の内面に設けられた陰極導体１１
と、陰極導体１１の上に形成された絶縁層１２と、絶縁
層１２の上に形成されたゲート電極１３と、ゲート電極
１３と絶縁層１２に形成されたホール１４と、ホール１
４の内部に露出した陰極導体１１の上に形成されたコー
ン形状のエミッタ１５とを有している。エミッタ１５の
先端はゲート電極１３に近接している。Next, in the FED 1 of this embodiment, the envelope 2
The field emission element 10 is provided on the inner surface of the cathode substrate 3 as a cathode serving as an electron source. The field emission device 10 includes a cathode conductor 11 provided on the inner surface of the cathode substrate 3.
An insulating layer 12 formed on the cathode conductor 11; a gate electrode 13 formed on the insulating layer 12; a hole 14 formed in the gate electrode 13 and the insulating layer 12;
4 has a cone-shaped emitter 15 formed on the cathode conductor 11 exposed inside. The tip of the emitter 15 is close to the gate electrode 13.
【００２０】本例のＦＥＤ１によれば、陽極導体５は２
層構造であり、従来還元されやすいとされていたＩＴＯ
を、透光性と導電性に優れるとともに高い耐還元性を備
えたＺｎＯ：Ａｌ薄膜の第２層９で被覆保護している。
このため、ＦＥＤ１の製造工程において外囲器２内を還
元性雰囲気にしても、陽極導体５のＩＴＯ（第１層８）
が還元されてＩｎが析出する等の不都合が生じることは
ない。According to the FED 1 of this embodiment, the anode conductor 5
ITO, which has a layer structure and has been considered easy to be reduced
Is covered and protected by a second layer 9 of a ZnO: Al thin film having excellent translucency and conductivity and high resistance to reduction.
For this reason, even if the inside of the envelope 2 is changed to a reducing atmosphere in the manufacturing process of the FED 1, the ITO (the first layer 8)
Is not reduced to cause inconvenience such as precipitation of In.
【００２１】以上説明した例においては、陽極導体をＺ
ｎＯ：ＡｌとＩＴＯの２層構造としたが、２層構造のそ
の他の組み合わせとしては、次のようなものもある。こ
れによっても、前記例と略同様の効果が得られる。 ＺｎＯ：Ａｌ／ＳｎＯ2 、ＺｎＯ／ＺｎＯ：Ａｌ、Ｚｎ
Ｏ／ＩＴＯ、ＺｎＯ／ＳｎＯ2 。In the example described above, the anode conductor is Z
Although the two-layer structure of nO: Al and ITO is used, other combinations of the two-layer structure include the following. This also provides substantially the same effects as in the above example. ZnO: Al / SnO 2 , ZnO / ZnO: Al, Zn
O / ITO, ZnO / SnO 2 .
【００２２】本発明の透明導電膜は、３層以上の構造に
してもよいし、透光性と導電性に優れるとともに高い耐
還元性を備えたＺｎＯ：Ａｌ薄膜等のような物質であれ
ば１層構造でもよい。また、各層の厚さは、次のような
物質の組み合わせの場合には次のような値が適当であ
る。例えば、ＺｎＯ：Ａｌ（３００〜１０００オングス
トローム）／ＳｎＯ2 （１０００〜２０００オングスト
ローム）、ＺｎＯ（３００〜１０００オングストロー
ム）／ＺｎＯ：Ａｌ（１０００〜３０００オングストロ
ーム）、ＺｎＯ（３００〜１０００オングストローム）
／ＩＴＯ（１０００〜２０００オングストローム）、Ｚ
ｎＯ（３００〜１０００オングストローム）／ＳｎＯ2
（１０００〜２０００オングストローム）。また、Ｚｎ
Ｏに添加して効果が得られる不純物としては、前記Ａｌ
の他、Ｂ、Ｇａ、Ｉｎ、Ｔｌ、Ｓｎ等がある。また、Ｚ
ｎＯに添加する不純物の量は、０．１〜１０ｗｔ％位が
適当である。The transparent conductive film of the present invention may have a structure of three or more layers, or may be made of a material such as a ZnO: Al thin film which is excellent in light transmission and conductivity and has high reduction resistance. It may have a one-layer structure. The following values are appropriate for the thickness of each layer in the case of the following combinations of substances. For example, ZnO: Al (300-1000 angstroms) / SnO 2 (1000-2000 angstroms), ZnO (300-1000 angstroms) / ZnO: Al (1000-3000 angstroms), ZnO (300-1000 angstroms)
/ ITO (1000-2000 angstroms), Z
nO (300 to 1000 angstroms) / SnO 2
(1000-2000 angstroms). Also, Zn
Examples of impurities that can be obtained by adding an effect to O include the aforementioned Al.
And B, Ga, In, Tl, Sn and the like. Also, Z
The amount of impurities added to nO is suitably about 0.1 to 10 wt%.
【００２３】[0023]
【発明の効果】本発明の透明導電膜は、透光性と導電性
に優れるとともに高い耐還元性を備えたＺｎＯを含んで
いるので、真空気密容器（外囲器）内に設けられる透明
導電膜として有用である。特に、外囲器２内を高真空雰
囲気に排気する際の高温中で還元ガスによるクリーニン
グを行っても、陽極導体の還元反応を防止することがで
きるので、ＦＥＤには特に適している。As described above, the transparent conductive film of the present invention contains ZnO which is excellent in light transmission and conductivity and has high resistance to reduction. Therefore, the transparent conductive film provided in a vacuum-tight container (envelope) is provided. Useful as a membrane. In particular, even if cleaning with a reducing gas is performed at a high temperature when the inside of the envelope 2 is evacuated to a high vacuum atmosphere, the reduction reaction of the anode conductor can be prevented.
【図１】本発明の実施の形態の一例を示す断面図であ
る。FIG. 1 is a cross-sectional view illustrating an example of an embodiment of the present invention.
１ 電界放出形表示素子 ２ 気密容器である外囲器 ４ 気密容器の内面を構成する陽極基板 ５ 透明導電膜としての陽極導体 ８ 透明導電膜である第１層 ９ 透明導電膜である第２層 １０ 電界放出素子 DESCRIPTION OF SYMBOLS 1 Field emission display element 2 Enclosure which is an airtight container 4 Anode substrate which constitutes the inner surface of an airtight container 5 Anode conductor as a transparent conductive film 8 First layer which is a transparent conductive film 9 Second layer which is a transparent conductive film 10 Field emission device
───────────────────────────────────────────────────── フロントページの続き (72)発明者 内田 裕治 千葉県茂原市大芝629 双葉電子工業株式 会社内 (72)発明者 土岐 均 千葉県茂原市大芝629 双葉電子工業株式 会社内 Ｆターム(参考） 4K029 AA09 BA45 BA49 BA50 BB02 BB07 BB08 BC09 BD00 5C036 AA10 EE08 EF01 EF06 EF09 EG25 EG36 EH08 5G307 FA01 FB01 FC10 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Yuji Uchida 629 Oshiba, Mobara-shi, Chiba Futaba Electronics Co., Ltd. (72) Inventor Hitoshi Toki 629 Oshiba, Mobara-shi, Chiba Futaba Electronics Co., Ltd. Reference) 4K029 AA09 BA45 BA49 BA50 BB02 BB07 BB08 BC09 BD00 5C036 AA10 EE08 EF01 EF06 EF09 EG25 EG36 EH08 5G307 FA01 FB01 FC10
Claims (7)
むことを特徴とする透明導電膜。1. A transparent conductive film formed on an inner surface of an airtight container and containing ZnO.
り、前記ＺｎＯが少なくとも表面の一部に含まれている
ことを特徴とする請求項１記載の透明導電膜。2. The transparent conductive film according to claim 1, wherein said transparent conductive film has a multilayer structure, and said ZnO is contained in at least a part of its surface.
が、ＩｎとＳｎから選択された元素の化合物を含んでい
る請求項２記載の透明導電膜。3. The transparent conductive film according to claim 2, wherein the layer other than the layer containing ZnO contains a compound of an element selected from In and Sn.
あり、前記Ｓｎの化合物がＳｎＯ2 である請求項３記載
の透明導電膜。4. The transparent conductive film according to claim 3, wherein said compound of In is Indium Tin Oxide, and said compound of Sn is SnO 2 .
とを特徴とする請求項１又は２又は３又は４記載の透明
導電膜。5. The transparent conductive film according to claim 1, wherein said ZnO is doped with Al.
器の内面が非晶質の物質からなり、前記透明導電膜がＣ
軸配向したウルツ鉱構造の多結晶薄膜である請求項５記
載の透明導電膜。6. The inner surface of an airtight container on which the transparent conductive film is formed is made of an amorphous material, and the transparent conductive film is made of C
6. The transparent conductive film according to claim 5, which is a polycrystalline thin film having a wurtzite structure with an axial orientation.
面に形成された透明導電膜からなる陽極導体と、前記陽
極導体に形成された蛍光体層と、前記陽極基板に所定間
隔をおいて対面するように配置された陰極基板と、前記
陰極基板の内面に形成された電界放出素子とを有する電
界放出形表示素子において、 前記透明導電膜がＺｎＯを含むことを特徴とする電界放
出形表示素子。7. A light-transmitting anode substrate, an anode conductor made of a transparent conductive film formed on the inner surface of the anode substrate, a phosphor layer formed on the anode conductor, and a predetermined distance from the anode substrate. Wherein the transparent conductive film contains ZnO. A field emission display device comprising: a cathode substrate disposed so as to face the surface of the cathode substrate; and a field emission device formed on an inner surface of the cathode substrate. Shape display element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11073984A JP2000268638A (en) | 1999-03-18 | 1999-03-18 | Transparent conductive film and field emission display element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11073984A JP2000268638A (en) | 1999-03-18 | 1999-03-18 | Transparent conductive film and field emission display element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000268638A true JP2000268638A (en) | 2000-09-29 |
Family
ID=13533891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11073984A Pending JP2000268638A (en) | 1999-03-18 | 1999-03-18 | Transparent conductive film and field emission display element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000268638A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007329051A (en) * | 2006-06-08 | 2007-12-20 | Tosoh Corp | Zinc oxide-based transparent conductive film, liquid crystal display using the same, and zinc oxide-based sputtering target |
| JP2009057605A (en) * | 2007-08-31 | 2009-03-19 | Hitachi Ltd | Zinc oxide thin film, transparent conductive film using the same, and display element |
| US8174177B2 (en) | 2005-06-30 | 2012-05-08 | Thomson Licensing | Segmented conductive coating for a luminescent display device |
-
1999
- 1999-03-18 JP JP11073984A patent/JP2000268638A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8174177B2 (en) | 2005-06-30 | 2012-05-08 | Thomson Licensing | Segmented conductive coating for a luminescent display device |
| JP2007329051A (en) * | 2006-06-08 | 2007-12-20 | Tosoh Corp | Zinc oxide-based transparent conductive film, liquid crystal display using the same, and zinc oxide-based sputtering target |
| JP2009057605A (en) * | 2007-08-31 | 2009-03-19 | Hitachi Ltd | Zinc oxide thin film, transparent conductive film using the same, and display element |
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