JP2000268653A - Porcelain insulator for high voltage - Google Patents
Porcelain insulator for high voltageInfo
- Publication number
- JP2000268653A JP2000268653A JP11068221A JP6822199A JP2000268653A JP 2000268653 A JP2000268653 A JP 2000268653A JP 11068221 A JP11068221 A JP 11068221A JP 6822199 A JP6822199 A JP 6822199A JP 2000268653 A JP2000268653 A JP 2000268653A
- Authority
- JP
- Japan
- Prior art keywords
- coating layer
- dielectric constant
- glaze
- porcelain insulator
- strength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012212 insulator Substances 0.000 title claims abstract description 63
- 229910052573 porcelain Inorganic materials 0.000 title claims description 56
- 239000011247 coating layer Substances 0.000 claims abstract description 62
- 239000013078 crystal Substances 0.000 claims abstract description 17
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 7
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 7
- -1 titanate compound Chemical class 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 10
- 230000015556 catabolic process Effects 0.000 abstract description 6
- 239000011148 porous material Substances 0.000 abstract description 6
- 239000000696 magnetic material Substances 0.000 abstract 2
- 230000006835 compression Effects 0.000 abstract 1
- 238000007906 compression Methods 0.000 abstract 1
- 239000002994 raw material Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 9
- 230000035515 penetration Effects 0.000 description 8
- 239000000725 suspension Substances 0.000 description 7
- 239000004576 sand Substances 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000004568 cement Substances 0.000 description 2
- 239000004927 clay Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000010433 feldspar Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Insulators (AREA)
- Insulating Bodies (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は高電圧用磁器がいし
に関するものであり、特に、機械的強度と絶縁破壊強度
すなわち急峻波強度に優れた高電圧用磁器がいしに関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-voltage porcelain insulator, and more particularly to a high-voltage porcelain insulator having excellent mechanical strength and dielectric breakdown strength, that is, steep wave strength.
【０００２】[0002]
【従来の技術】従来から、架空送電線等の電気絶縁と機
械的支持を行う構成部材として、中実がいしや懸垂がい
し等の磁器がいしが知られている。これらの磁器がいし
は、アルミナ、粘土等の原料を混合、成形して成形体を
作製し、作製した成形体の表面に釉薬を塗布した後、釉
薬を塗布した成形体を焼成することで作製している。磁
器がいしの素地固有の絶縁破壊強度を得るためには、無
釉とすることが必要であるが、釉薬を使用することで、
素地表面の微小欠陥を埋めること、および、素地との熱
膨張率差により内部応力を生じさせることで、磁器がい
しの引張強度を発現させている。2. Description of the Related Art Conventionally, porcelain insulators such as solid insulators and suspension insulators have been known as components for electrically insulating and mechanically supporting overhead transmission lines and the like. These porcelain insulators are manufactured by mixing and molding raw materials such as alumina and clay to produce a molded body, applying glaze to the surface of the produced molded body, and firing the molded body coated with glaze. ing. In order to obtain the dielectric breakdown strength inherent to porcelain insulators, it is necessary to use a non-glaze, but by using glaze,
The tensile strength of the porcelain insulator is developed by filling the microdefects on the surface of the substrate and generating an internal stress due to a difference in thermal expansion coefficient from the substrate.
【０００３】[0003]
【発明が解決しようとする課題】これらの従来から知ら
れている磁器がいしは、通常の電圧や汚損雰囲気下での
使用には十分耐えることができる。しかしながら、より
高い電圧が加わる状態、すなわち天然雷の放電による急
峻雷インパルス電圧が加わった場合には、これらの従来
知られている磁器がいしでは不十分であり、絶縁破壊強
さを抜本的に改善する必要があった。These conventionally known porcelain insulators can sufficiently withstand use under normal voltage and in a dirty atmosphere. However, when a higher voltage is applied, that is, when a steep lightning impulse voltage due to the discharge of natural lightning is applied, these conventionally known porcelain insulators are insufficient, and the dielectric strength is drastically improved. I needed to.
【０００４】また、急峻波強度特性を高める技術とし
て、本出願人は、釉薬に所定量のＭｎＯなどを加える技
術（特開昭６３−２１１５２５号公報）、懸垂がいしに
おけるサンドと釉薬の誘電率を規定する技術（特開平９
−６３３７９号公報）、磁器にコランダム結晶を含有さ
せる技術（特開平１０−２２８８１８号公報）等を提案
しているが、いずれも磁器がいし本体の表面に釉薬を塗
布した構造であるため、急峻波強度はある程度改善され
るものの、急峻波強度の抜本的な改善を達成することが
できなかった。As a technique for improving the steep wave intensity characteristics, the present applicant has disclosed a technique of adding a predetermined amount of MnO or the like to a glaze (Japanese Patent Laid-Open No. 63-11525), and a technique of measuring the dielectric constant of sand and glaze in a suspended insulator. Defined technology (Japanese Unexamined Patent Publication
Japanese Patent Application Laid-Open No. 63379/93), and a technique for incorporating corundum crystals in porcelain (Japanese Patent Application Laid-Open No. 10-228818), etc., all of which have a structure in which glaze is applied to the surface of a porcelain insulator body, so that a steep wave Although the intensity was improved to some extent, drastic improvement of the steep wave intensity could not be achieved.
【０００５】ここで、釉薬は、磁器がいしの原料である
長石、アルミナ、坏土のうち長石の配合比率を高め、ガ
ラス相のみを生成するようにしたものである。そのた
め、釉薬は本質的にはガラスと同等の高い絶縁破壊強度
を有するはずであるが、気孔が内在するためその強さは
磁器を下回っている。気孔（空気）の誘電率が、周囲の
ガラス相に比べて小さいので、電位が加わった場合は、
気孔に電界が集中するためと考えられる。また、釉薬の
誘電率が磁器がいし本体の誘電率よりも低いため、例え
ば、釉薬が急峻波パルスを印加した時の弱点となってい
た。そのため、磁器がいし本体の表面に釉薬を塗布した
従来の磁器がいしの構造では、抜本的な改善が難しいこ
とが判明した。Here, the glaze is such that the mixing ratio of feldspar among feldspar, alumina and kneaded clay, which are raw materials of porcelain insulator, is increased so that only a glass phase is generated. Therefore, glaze should have essentially the same high dielectric breakdown strength as glass, but its strength is lower than that of porcelain due to the presence of pores. Since the dielectric constant of the pores (air) is smaller than the surrounding glass phase, when an electric potential is applied,
This is probably because the electric field concentrates on the pores. Further, since the dielectric constant of the glaze is lower than the dielectric constant of the porcelain insulator body, for example, the glaze is a weak point when a steep wave pulse is applied. Therefore, it has been found that it is difficult to drastically improve the structure of the conventional porcelain insulator in which glaze is applied to the surface of the porcelain insulator body.
【０００６】さらに、磁器がいしの構造について、本出
願人は、特開平７−２６２８５４号公報において、磁器
がいし本体の表面に釉薬を塗布し、その釉薬の上に釉薬
よりも絶縁破壊強度の高いコーティング層を設ける技術
を開示している。しかし、この例でも、磁器がいし本体
の表面には気孔の存在する釉薬を使用するため、上記釉
薬の問題を解消することはできなかった。Further, regarding the structure of the porcelain insulator, the applicant of the present invention disclosed in Japanese Patent Application Laid-Open No. Hei 7-262854, a method of applying a glaze to the surface of a porcelain insulator body and coating the glaze with a higher dielectric strength than the glaze. A technique for providing a layer is disclosed. However, even in this example, the glaze having pores is used on the surface of the main body of the porcelain insulator, and thus the problem of the glaze cannot be solved.
【０００７】本発明の目的は上述した課題を解消して、
機械的強度を低下させることなく絶縁破壊強度すなわち
急峻波強度を向上させた高電圧用磁器がいしを提供しよ
うとするものである。An object of the present invention is to solve the above-mentioned problems,
It is an object of the present invention to provide a high-voltage porcelain insulator having improved dielectric strength, that is, steep wave strength, without lowering mechanical strength.
【０００８】[0008]
【課題を解決するための手段】本発明の高電圧用磁器が
いしは、磁器がいし本体と、磁器がいし本体の表面に設
けた高誘電率結晶を含有する主として磁器質原料からな
る第１のコーティング層と、第１のコーティング層の表
面に設けた釉薬からなる第２のコーティング層とからな
ることを特徴とするものである。According to the present invention, there is provided a high voltage porcelain insulator comprising a porcelain insulator main body and a first coating layer mainly composed of a porcelain raw material containing a high dielectric constant crystal provided on the surface of the porcelain insulator main body. And a second coating layer made of glaze provided on the surface of the first coating layer.
【０００９】本発明では、磁器がいし本体の表面に高誘
電率結晶を含有する主として磁器質原料からなる第１の
コーティング層を設けることで、釉薬と等価もしくはそ
れ以上の圧縮ストレスを磁器がいし本体に与えることが
できるほか、釉薬の欠点である気孔量を減少させ、機械
的、電気的両面より素地の高い固有強度を発現させるこ
とができる。また、第１のコーティング層が、好ましく
は酸化チタンおよび／またはチタン酸化合物からなる比
誘電率が１０以上の高誘電率結晶を含む。これにより、
第１のコーティング層の見かけの比誘電率を好ましくは
４以上とでき、第１のコーティング層と磁器がいし本体
との誘電率の差を小さくでき、第１のコーティング層が
急峻波パルス印加時の弱点とならない。さらに、第１の
コーティング層の気孔率を第２のコーティング層の気孔
率よりも小さくすることで、このことでも第１のコーテ
ィング層が急峻波パルス印加時の弱点とならず、好まし
い。In the present invention, by providing a first coating layer mainly composed of a porcelain raw material containing a high dielectric constant crystal on the surface of the porcelain insulator main body, a compressive stress equivalent to or greater than that of glaze is applied to the porcelain insulator main body. In addition, it can reduce the amount of porosity, which is a drawback of the glaze, and can exhibit a higher intrinsic strength of the substrate than mechanical and electrical. Further, the first coating layer preferably includes a high dielectric constant crystal having a relative dielectric constant of 10 or more made of titanium oxide and / or a titanate compound. This allows
The apparent relative dielectric constant of the first coating layer can be preferably 4 or more, the difference in the dielectric constant between the first coating layer and the porcelain insulator main body can be reduced, and the first coating layer can be used when a steep wave pulse is applied. No weakness. Further, by making the porosity of the first coating layer smaller than the porosity of the second coating layer, the first coating layer does not become a weak point when a steep wave pulse is applied, which is also preferable.
【００１０】[0010]
【発明の実施の形態】図１は本発明の磁器がいしの例と
して懸垂がいしの一例の構成を示す部分断面図である。
図１に示す例において、１は磁器からなる懸垂がいし本
体、２は磁器がいし本体１の表面に設けた高誘電率結晶
を含有する主として磁器質原料からなる第１のコーティ
ング層、３は第１のコーティング層２の表面に設けた釉
薬からなる第２のコーティング層、４は第２のコーティ
ング層３に付着させた不定形のサンド、５はキャップ金
具、６はピン金具、７はキャップ金具５とサンド４との
間およびピン金具６とサンド４との間を接合するセメン
トである。図１に示す懸垂がいしの構成において、本発
明の特徴は、懸垂がいし本体１の表面に所定の第１のコ
ーティング層２を設けた点である。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a partial sectional view showing an example of a suspension insulator as an example of a porcelain insulator of the present invention.
In the example shown in FIG. 1, 1 is a suspension insulator body made of porcelain, 2 is a first coating layer mainly made of a porcelain raw material containing a high dielectric constant crystal provided on the surface of the porcelain insulator body 1, and 3 is a first coating layer. 2 is a second coating layer made of glaze provided on the surface of the coating layer 2, 4 is an amorphous sand adhered to the second coating layer 3, 5 is a cap fitting, 6 is a pin fitting, and 7 is a cap fitting 5. And the cement for joining between the pin fitting 6 and the sand 4. In the configuration of the suspension insulator shown in FIG. 1, a feature of the present invention is that a predetermined first coating layer 2 is provided on the surface of the suspension insulator body 1.
【００１１】第１のコーティング層２の原料としては、
主として磁器質原料、好ましくは、ＳｉＯ2 ：５０〜６
０ｗｔ％、Ａｉ2 Ｏ3 ：２０〜３０ｗｔ％、その他Ｍｇ
Ｏ、ＣａＯ、Ｋ2 Ｏ＋Ｎａ2 Ｏからなる原料を用いる。
この磁器質原料は、従来から釉薬として知られている原
料に比べて、ＳｉＯ2 およびＡｌ2 Ｏ3 の添加量におい
て明らかに異なっている。また、上記磁器質原料に対し
て添加する高誘電率結晶としては、好ましくは１ＭＨｚ
における比誘電率が１０以上の結晶、さらに好ましくは
酸化チタンおよび／またはチタン酸化合物（ＭｇＴｉＯ
3 、ＣａＴｉＯ3 、ＢａＴｉＯ3 、ＭｇＯ・Ａｌ2 Ｏ3
・３ＴｉＯ2 ）からなる結晶を使用する。そして、第１
のコーティング層２全体の比誘電率は４以上であること
が好ましい。これらの構成は急峻波強度向上に寄与す
る。さらに、第１のコーティング層２の厚さについては
特に限定しないが、０．１ｍｍ以上であることが、急峻
波特性向上の観点で好ましい。さらにまた、第１のコー
ティング層２と懸垂がいし本体１との熱膨張率の差につ
いても特に限定しないが、６５０℃において０．１〜
０．２％であると機械的強度が向上するため好ましい。The raw materials of the first coating layer 2 include:
Mainly porcelain raw materials, preferably, SiO 2: 50~6
0wt%, Ai 2 O 3: 20~30wt%, other Mg
A raw material consisting of O, CaO, K 2 O + Na 2 O is used.
This porcelain raw material is clearly different from the raw materials conventionally known as glazes in the added amounts of SiO 2 and Al 2 O 3 . The high dielectric constant crystal to be added to the ceramic material is preferably 1 MHz.
Having a relative dielectric constant of 10 or more, more preferably titanium oxide and / or titanate compound (MgTiO
3 , CaTiO 3 , BaTiO 3 , MgO · Al 2 O 3
・ Use a crystal composed of 3TiO 2 ). And the first
The relative dielectric constant of the entire coating layer 2 is preferably 4 or more. These configurations contribute to the improvement of the steep wave intensity. Further, the thickness of the first coating layer 2 is not particularly limited, but is preferably 0.1 mm or more from the viewpoint of improving the steep wave characteristics. Furthermore, the difference in the coefficient of thermal expansion between the first coating layer 2 and the pendant insulator body 1 is not particularly limited.
0.2% is preferable because the mechanical strength is improved.
【００１２】第２のコーティング層３としては、従来か
ら知られている釉薬を使用する。釉薬組成の一例として
は、ＳｉＯ2 ：６０〜７０ｗｔ％、Ａｌ2 Ｏ3 ：１０〜
２０ｗｔ％、釉薬気泡を除去するため好ましくはＭｎ
Ｏ：１ｗｔ％以上の組成があげられる。また、気孔率に
ついても特に限定しないが、第１のコーティング層２の
気孔率よりも大きい気孔率をして、第１のコーティング
層２が急峻波パルス印加時における弱点とならないよう
構成することが好ましい。さらに、厚さについても特に
限定しないが、０．５ｍｍを超えると釉薬中に気孔が内
在するようになるので、０．５ｍｍ以下とすることが急
峻波強度向上の観点から好ましい。図１に示す例のよう
に、懸垂がいしの例では、第２のコーティング層３がサ
ンド４を磁器がいし本体１の頭部の外周面および内周面
に接着するために使用される。As the second coating layer 3, a conventionally known glaze is used. As an example of the glaze composition, SiO 2 : 60 to 70 wt%, Al 2 O 3 : 10
20 wt%, preferably Mn to remove glaze bubbles
O: a composition of 1 wt% or more. Although the porosity is not particularly limited, the porosity may be set to be larger than the porosity of the first coating layer 2 so that the first coating layer 2 does not become a weak point when a steep wave pulse is applied. preferable. Further, the thickness is not particularly limited, but if it exceeds 0.5 mm, pores will be present in the glaze. Therefore, the thickness is preferably 0.5 mm or less from the viewpoint of improving the steep wave intensity. As in the example shown in FIG. 1, in the example of the suspension insulator, the second coating layer 3 is used to adhere the sand 4 to the outer peripheral surface and the inner peripheral surface of the head of the porcelain insulator body 1.
【００１３】第１のコーティング層２は、従来の施釉方
法と同様に、磁器がいし本体１上に、磁器がいし本体１
と同様の素地を主成分とする原料を泥奨状態にしてディ
ッピングすることで形成される。そのため、第１のコー
ティング層２の気孔率は真空土連記で押し出した素地の
気孔率よりも高くなる。このため、第１のコーティング
層２の絶縁破壊強さは素地よりも低下することが避けら
れない。その結果可能な限り気孔率を減少し、これを補
う必要がある。また、磁器がいし本体１を構成する素地
の絶縁破壊強さは相当に高いレベルにあることにより、
素地と第１のコーティング層２の複合層を考えれば、素
地側の分担割合を増大し第１のコーティング層２に加わ
る電界を、少しでも緩和させることが必要である。この
ため、第１のコーティング層２には、誘電率が高いこと
が要求される。The first coating layer 2 is formed on the porcelain insulator body 1 in the same manner as in the conventional glaze method.
It is formed by dipping a raw material having the same base material as a main component in a mud-recommended state. Therefore, the porosity of the first coating layer 2 is higher than the porosity of the base material extruded in the vacuum soil sequence. For this reason, the dielectric breakdown strength of the first coating layer 2 is inevitably lower than that of the base material. As a result, it is necessary to reduce and compensate for the porosity as much as possible. In addition, the dielectric strength of the body constituting the porcelain insulator body 1 is at a considerably high level,
Considering the composite layer of the substrate and the first coating layer 2, it is necessary to increase the sharing ratio on the substrate side and to alleviate the electric field applied to the first coating layer 2 as much as possible. Therefore, the first coating layer 2 is required to have a high dielectric constant.
【００１４】一方、誘電率を高めるために、本発明で
は、第１のコーティング層２に好ましくは比誘電率１０
以上の高誘電率結晶を含有させている。そのような高誘
電率結晶としては、酸化チタンの結晶相（比誘電率：ε
＝１００）、酸化チタンの焼成により得られる結晶相
（ＭｇＯ・Ａｌ2 Ｏ3 ・３ＴｉＯ2 、比誘電率：ε＝２
０〜１００）があげられる。On the other hand, in order to increase the dielectric constant, in the present invention, the first coating layer 2 preferably has a relative dielectric constant of 10
The high dielectric constant crystal described above is contained. As such a high dielectric constant crystal, a crystal phase of titanium oxide (relative dielectric constant: ε)
= 100), crystal phase obtained by calcination of titanium oxide (MgO · Al 2 O 3 · 3TiO 2, relative permittivity: epsilon = 2
0 to 100).
【００１５】ここで、問題となる誘電率やその他の電気
的性状の測定について解析する。従来、釉薬の誘電率は
流し込みにより成形された試料片を、所定の寸法に加工
することにより、その特性を測定している。本発明で
は、この方法に従って第１のコーティング層２の誘電率
を測定すると、その比誘電率が非現実的な値を示すケー
スが度々あり、実際に、磁器がいし本体１のピンホール
に施された第１のコーティング層２の性状を把握するこ
とが困難であることを見い出した。そこで、試料片にコ
ーティングされた第１のコーティング層２の誘電率を求
めるため、以下に示す方法を用いた。Here, the measurement of the dielectric constant and other electrical properties that are problematic will be analyzed. Conventionally, the dielectric constant of a glaze is measured by processing a sample piece formed by casting into a predetermined size. In the present invention, when the dielectric constant of the first coating layer 2 is measured according to this method, the relative dielectric constant often shows an unrealistic value, and the dielectric constant is actually applied to the pinhole of the porcelain insulator main body 1. It has been found that it is difficult to grasp the properties of the first coating layer 2. Therefore, the following method was used to determine the dielectric constant of the first coating layer 2 coated on the sample piece.
【００１６】まず、図２に示す素地の表面にコーティン
グ層を形成したモデルに基づき、第１のコーティング層
２の静電容量（Ｃ1 ）を、素地・コーティング複合層の
静電容量（Ｃ）と素地の静電容量（Ｃ2 ）を個別に測定
し、以下の（１）式より算出する。Ｃ1 が求まれば、第
１のコーティング層２の誘電率は以下の（２）式によっ
て求まる。本例では、素地の厚さを出来るだけ薄くし、
Ｃ2 の値を大きくすることにより、Ｃの値との差を大き
くし、第１のコーティング層２の誘電率の測定精度を上
げた。具体的には、素地の厚さを１ｍｍとし、Ｃ2 の値
を６１．５ｐＦとした。First, based on the model shown in FIG. 2 in which a coating layer is formed on the surface of the substrate, the capacitance (C 1 ) of the first coating layer 2 is determined by the capacitance (C) of the substrate / coating composite layer. And the capacitance (C 2 ) of the substrate are individually measured and calculated by the following equation (1). Once C 1 is determined, the dielectric constant of the first coating layer 2 is determined by the following equation (2). In this example, make the substrate as thin as possible,
By increasing the value of C 2 , the difference from the value of C was increased, and the measurement accuracy of the dielectric constant of the first coating layer 2 was increased. Specifically, the thickness of the base material and 1 mm, was 61.5pF the value of C 2.
【数１】 (Equation 1)
【００１７】実際に、磁器がいし本体１の表面に第１の
コーティング層および第２のコーティング層を形成した
本発明の磁器がいしであって第１のコーティング層の誘
電率を変えた磁器がいしを準備し、峻度２５００ｋＶ／
μｓの急峻雷インパルス電圧（Ｖｆ＝３７５ｋＶ）を２
０回印加したときの貫通率（貫通個数／供試数）から急
峻波強度を調べた。ここで、実際のがいしの貫通率は非
常に小さく、試験的にこれを検証するため、絶縁距離を
短くし貫通率が約１０倍となるような試験用がいしを本
発明の磁器がいしとして使用した。結果を図３に示す。
また、基準として、磁器がいし本体１の表面に釉薬層の
みを設けた従来技術で製作した磁器がいしであって、上
述した本発明の試験がいしと同様に絶縁距離を短くし貫
通率が約１０倍になるような試験用がいしを準備し、上
述した本発明の試験がいしと同様の試験を行ったとこ
ろ、貫通率は３０％であった。図３の結果から、この貫
通率３０％以下を満たすものは、第１のコーティング層
の比誘電率が４．０以上であり、第１のコーティング層
の比誘電率は４．０以上であることが、絶縁破壊強さの
点で好ましいことがわかった。Actually, a porcelain insulator according to the present invention in which a first coating layer and a second coating layer are formed on the surface of a porcelain insulator body 1 is prepared, wherein the dielectric constant of the first coating layer is changed. And a steepness of 2500 kV /
μs steep lightning impulse voltage (Vf = 375 kV)
The steep wave intensity was examined from the penetration rate (the number of penetrations / the number of samples) when the voltage was applied 0 times. Here, the penetration rate of the actual insulator is very small, and in order to verify this experimentally, a test insulator with a short insulation distance and a penetration rate of about 10 times was used as the porcelain insulator of the present invention. . The results are shown in FIG.
As a reference, a porcelain insulator manufactured by the prior art having only a glaze layer on the surface of the porcelain insulator body 1 has a short insulation distance and a penetration rate of about 10 times as in the above-described test insulator of the present invention. A test insulator having the following characteristics was prepared, and a test similar to the above-described test insulator of the present invention was performed. As a result, the penetration rate was 30%. According to the results of FIG. 3, those satisfying the penetration rate of 30% or less have a relative permittivity of the first coating layer of 4.0 or more, and a relative permittivity of the first coating layer of 4.0 or more. Has been found to be preferable in terms of dielectric breakdown strength.
【００１８】[0018]
【発明の効果】以上の説明から明らかなように、本発明
によれば、磁器がいし本体の表面に高誘電率結晶を含有
する主として磁器質原料からなる第１のコーティング層
を設けているため、釉薬と等価もしくはそれ以上の圧縮
ストレスを磁器がいし本体に与えることができるほか、
釉薬の欠点である気孔量を減少させ、機械的、電気的両
面より素地の高い固有強度を発現させることができる。As is apparent from the above description, according to the present invention, the first coating layer mainly composed of a porcelain raw material containing a high dielectric constant crystal is provided on the surface of the porcelain insulator main body. In addition to applying compressive stress equivalent to or greater than glaze to the porcelain insulator,
It can reduce the amount of porosity, which is a drawback of glaze, and can exhibit a high intrinsic strength of the base material from both mechanical and electrical sides.
【図１】本発明の磁器がいしの例として懸垂がいしの一
例の構成を示す部分断面図である。FIG. 1 is a partial sectional view showing a configuration of an example of a suspension insulator as an example of a porcelain insulator of the present invention.
【図２】第１のコーティング層の見かけの比誘電率を求
めるのに使用したモデルの一例を示す図である。FIG. 2 is a diagram illustrating an example of a model used to determine an apparent relative dielectric constant of a first coating layer.
【図３】第１のコーティング層の比誘電率と製品の貫通
率との関係を示すグラフである。FIG. 3 is a graph showing a relationship between a relative dielectric constant of a first coating layer and a penetration rate of a product.
１ 磁器がいし本体、２ 第１のコーティング層、３
第２のコーティング層、４ サンド、５ キャップ金
具、６ ピン金具、７ セメント1 porcelain insulator body, 2 first coating layer, 3
Second coating layer, 4 sand, 5 cap fitting, 6 pin fitting, 7 cement
フロントページの続き Ｆターム(参考） 5G331 AA01 AA02 BA03 BC08 CA02 CC02 DA01 5G333 AA11 AB01 BA06 CA01 CC08 DA01 DA28 FB11 Continued on front page F-term (reference) 5G331 AA01 AA02 BA03 BC08 CA02 CC02 DA01 5G333 AA11 AB01 BA06 CA01 CC08 DA01 DA28 FB11
Claims (5)
に設けた高誘電率結晶を含有する主として磁器質原料か
らなる第１のコーティング層と、第１のコーティング層
の表面に設けた釉薬からなる第２のコーティング層とか
らなることを特徴とする高電圧用磁器がいし。1. A porcelain insulator body, a first coating layer mainly composed of a porcelain material containing a high dielectric constant crystal provided on a surface of the porcelain insulator body, and a glaze provided on a surface of the first coating layer. A high-voltage porcelain insulator comprising a second coating layer.
る請求項１記載の高電圧用磁器がいし。2. A high voltage porcelain insulator according to claim 1, wherein said high dielectric constant crystal has a relative dielectric constant of 10 or more.
またはチタン酸化合物である請求項１記載の高電圧用磁
器がいし。3. The method according to claim 1, wherein the high dielectric constant crystal comprises titanium oxide and / or titanium oxide.
2. The high voltage porcelain insulator according to claim 1, which is a titanate compound.
電率が４以上である請求項１〜３のいずれか１項に記載
の高電圧用磁器がいし。4. The high voltage porcelain insulator according to claim 1, wherein said first coating layer has an apparent relative dielectric constant of 4 or more.
記第２のコーティング層の気孔率よりも小さい請求項１
記載の高電圧用磁器がいし。5. The porosity of the first coating layer is smaller than the porosity of the second coating layer.
The high voltage porcelain insulator described.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06822199A JP4094162B2 (en) | 1999-03-15 | 1999-03-15 | High voltage porcelain insulator |
| CN 00117875 CN1199200C (en) | 1999-03-15 | 2000-03-15 | Ceramic insulator for high voltage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06822199A JP4094162B2 (en) | 1999-03-15 | 1999-03-15 | High voltage porcelain insulator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000268653A true JP2000268653A (en) | 2000-09-29 |
| JP4094162B2 JP4094162B2 (en) | 2008-06-04 |
Family
ID=13367548
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP06822199A Expired - Lifetime JP4094162B2 (en) | 1999-03-15 | 1999-03-15 | High voltage porcelain insulator |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP4094162B2 (en) |
| CN (1) | CN1199200C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011121839A (en) * | 2009-12-14 | 2011-06-23 | Ngk Spark Plug Co Ltd | Ceramic insulator with glaze layer |
| CN104134499A (en) * | 2014-08-05 | 2014-11-05 | 国家电网公司 | High-voltage composite insulator |
| CN114133274A (en) * | 2021-12-17 | 2022-03-04 | 福建省德化县邦威陶瓷有限公司 | Long-afterglow fluorescent glaze ceramic product and preparation method thereof |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1309684C (en) * | 2005-04-07 | 2007-04-11 | 福州大学 | Method for manufacturing anti pollution flashover high tension ceramic and glass insulators |
| CN100594561C (en) * | 2007-12-26 | 2010-03-17 | 中国科学院电工研究所 | Composite insulating material and method for producing the same |
| KR102336645B1 (en) | 2017-08-18 | 2021-12-08 | 한국전력공사 | Coating method of porcelain insulators metal fitting and porcelain insulator manufactured by thereof |
| CN107578861A (en) * | 2017-09-01 | 2018-01-12 | 云南电网有限责任公司电力科学研究院 | Charge injection and device under a kind of transient suppression electric field |
| CN107574413B (en) * | 2017-09-01 | 2020-02-07 | 云南电网有限责任公司电力科学研究院 | Method and device for inhibiting charge injection |
-
1999
- 1999-03-15 JP JP06822199A patent/JP4094162B2/en not_active Expired - Lifetime
-
2000
- 2000-03-15 CN CN 00117875 patent/CN1199200C/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011121839A (en) * | 2009-12-14 | 2011-06-23 | Ngk Spark Plug Co Ltd | Ceramic insulator with glaze layer |
| CN104134499A (en) * | 2014-08-05 | 2014-11-05 | 国家电网公司 | High-voltage composite insulator |
| CN114133274A (en) * | 2021-12-17 | 2022-03-04 | 福建省德化县邦威陶瓷有限公司 | Long-afterglow fluorescent glaze ceramic product and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4094162B2 (en) | 2008-06-04 |
| CN1273422A (en) | 2000-11-15 |
| CN1199200C (en) | 2005-04-27 |
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