JP2000292927A5

JP2000292927A5 -

Info

Publication number: JP2000292927A5
Application number: JP1999103712A
Authority: JP
Filing date: 1999-04-12
Publication date: 2004-10-07
Anticipated expiration: 2019-04-12

Description

【発明の名称】パタン形成方法 [Title of the Invention] Pattern formation method

【０００１】
【発明の属する技術分野】
本発明は半導体装置等の微細加工に用いられるパタン形成方法に係り、特にＸ線、電子線等の電離放射線のパタン露光によりパタン潜像形成部に酸を生成せしめ、この酸を触媒とする反応によって、照射部と未照射部のアルカリ水溶液に対する溶解性を変化させ、アルカリ水溶液を現像液とする現像工程によりパタンを現出させるパタン形成方法に関する。[0001]
Field of the Invention
The present invention relates to a pattern forming method used for fine processing of a semiconductor device or the like, and in particular, an acid is generated in a pattern latent image forming portion by pattern exposure of ionizing radiation such as X-ray and electron beam, and this acid is used as a catalyst. by changing the solubility in an alkali aqueous solution of the irradiated portion and the unirradiated portion, about Rupa Tan forming method to appear a pattern by development step of the alkali aqueous solution and the developing solution.

【０００６】
本発明の目的は、高感度で高解像度のレジストパタンを形成できるパタン形成方法を提供することにある。[0006]
An object of the present invention is to provide a Rupa Tan forming method capable of forming a resist pattern of high resolution with high sensitivity.

【００５２】
【発明の効果】
本発明によれば、紫外線、遠紫外線、電子線、Ｘ線、その他の活性放射線に対して高感度で高解像度に優れたレジストパタンを形成できる。 [0052]
【Effect of the invention】
According to the present invention, ultraviolet rays, far ultraviolet rays, electron beams, X-rays, Ru can form a resist pattern with excellent high resolution with high sensitivity to other actinic radiation.

Claims

(A) A resin obtained by acid-catalyzed addition reaction of a binder resin containing a carboxyl group and / or a phenolic hydroxyl group with a compound containing at least two vinyl ether groups in one molecule, and (b) radiation irradiation Applying a resist solution containing a compound capable of generating an acid by
Forming a predetermined pattern latent image on the coating film using radiation;
And a developing step of developing a pattern using an alkaline aqueous solution as a developing solution.

In the pattern formation method according to claim 1, a ratio (Mw / Mn) of weight average molecular weight (Mw) to number average molecular weight (Mn) of the binder resin as the component (a) is 1.0 to 2.0. A pattern formation method characterized by being in the range of

The pattern forming method according to claim 1 or 2, wherein the binder resin of the component (a) has three or more benzene rings, three or more hydroxyl groups, and two or less hydroxyl groups in one benzene ring. It is a polyhydroxy compound which is the pattern formation method characterized by the above .

The method for forming a pattern according to claim 1, wherein the vinyl ether group-containing compound of component (a) has a vinyl ether group bonded directly or via a linking group to a hydroxyl group of a compound having at least two hydroxyl groups. A pattern formation method characterized by having a structure.

Preparing a chemically amplified resist solution containing a resin of a crosslinked structure generated by addition of a carboxyl group or a phenolic hydroxyl group contained in an alkali-soluble binder resin and a vinyl ether;
Applying the resist solution onto the substrate; and
A pattern formation method characterized in that a desired resist pattern is obtained by irradiating the substrate with radiation and developing it with an alkaline aqueous solution.

The pattern forming method according to claim 5, wherein the alkali-soluble binder resin has a weight average molecular weight (Mw) in the range of 2000 to 20,000.

The pattern forming method according to claim 6, wherein the alkali-soluble binder resin has a ratio (Mw / Mn) of a number average molecular weight (Mn) to the weight average molecular weight in a range of 1.0 to 2.0. How to form a pattern.