JP2000294311A - Electric connector and manufacture thereof - Google Patents

Electric connector and manufacture thereof

Info

Publication number
JP2000294311A
JP2000294311A JP11104000A JP10400099A JP2000294311A JP 2000294311 A JP2000294311 A JP 2000294311A JP 11104000 A JP11104000 A JP 11104000A JP 10400099 A JP10400099 A JP 10400099A JP 2000294311 A JP2000294311 A JP 2000294311A
Authority
JP
Japan
Prior art keywords
contact portion
spherical contact
insulating layer
plating layer
conductive metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11104000A
Other languages
Japanese (ja)
Inventor
Koji Nishizawa
孝治 西沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Polymer Co Ltd
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Polymer Co Ltd
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Polymer Co Ltd, Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Polymer Co Ltd
Priority to JP11104000A priority Critical patent/JP2000294311A/en
Publication of JP2000294311A publication Critical patent/JP2000294311A/en
Pending legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)
  • Connecting Device With Holders (AREA)
  • Manufacturing Of Electrical Connectors (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide an electric connector which can be used for an LGA(land grid array), BGA(ball grid array) or the like and a method for manufacturing the same by suppressing variations of connecting resistance of terminals, and reducing a compressive load. SOLUTION: In an electric connector, a plurality of conductive metal fine wires 2, each having a flat, globular contact 3 at one end and a globular contact 6 at the other end, are provided in a thickness direction of an elastic insulative layer 1 in such a manner that both contacts are exposed from the obverse and reverse thereof. Inverted dish-like plating layers 4a, 4b, 4c are disposed in such a manner as to cover the flat, globular contact 3 of the conductive metal fine wire 2, and further, semi-spherical plating layers 7a, 7b are disposed in such a manner as to cover the globular contact 6.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、ランド・グリッド
・アレイ型、ボール・グリッド・アレイ型のICパッケ
ージの検査あるいは接続等に使用される電気コネクタ及
びその製造方法に関するものである。
[0001] 1. Field of the Invention [0002] The present invention relates to an electrical connector used for inspection or connection of a land grid array type or ball grid array type IC package and a method of manufacturing the same.

【0002】[0002]

【従来の技術】従来、入出力端子数の多い表面実装型I
Cパッケージとしては、図7に示すように、ICパッケ
ージ本体21の周囲四辺からそれぞれ複数の端子22…
を取り出した構造のクワット・フラット・パッケージ
(以下、QFPと略称する)23が使用されている。こ
のQFPにおける最近の端子数の増加に対応するには、
実装面積をできるだけ小さくするため、ICパッケージ
の大きさを一定の寸法以下に抑制して端子ピッチを小さ
くする必要があり、最近は0.4mm程度の端子ピッチ
のものが用いられている。しかし、このような多端子Q
FPには、端子ピッチが非常に小さいので端子が変形し
やすいという問題がある。さらに多数の端子の位置合わ
せが困難なため、製造工程、検査工程及び実装工程での
接続信頼性が確保しにくい等の問題も生じていた。
2. Description of the Related Art Conventionally, a surface mount type I having a large number of input / output terminals has been proposed.
As shown in FIG. 7, a plurality of terminals 22...
A quat flat package (hereinafter, abbreviated as QFP) 23 having a structure from which the above is taken out is used. To respond to the recent increase in the number of terminals in this QFP,
In order to make the mounting area as small as possible, it is necessary to reduce the terminal pitch by suppressing the size of the IC package to a certain size or less. Recently, a terminal pitch of about 0.4 mm has been used. However, such a multi-terminal Q
The FP has a problem that the terminals are easily deformed because the terminal pitch is very small. Furthermore, since it is difficult to align a large number of terminals, there have been problems such as difficulty in securing connection reliability in a manufacturing process, an inspection process, and a mounting process.

【0003】そこで最近は、図8や図9に示すように、
ICパッケージ本体21の裏面全体にランド状電極24
あるいは半田ボール電極25からなる端子を格子型に並べ
たランド・グリッド・アレイ型ICパッケージ(以下、
LGAと略称する)26やボール・グリッド・アレイ型
ICパッケージ(以下、BGAと略称する)27が開発
され、その実用化が進んでいる。
Recently, as shown in FIGS. 8 and 9,
A land-like electrode 24 is provided on the entire back surface of the IC package body 21.
Alternatively, a land grid array type IC package in which terminals composed of solder ball electrodes 25 are arranged in a grid shape (hereinafter, referred to as a “land grid array type IC package”).
An LGA (abbreviated as LGA) 26 and a ball grid array type IC package (hereinafter abbreviated as BGA) 27 have been developed and are being put to practical use.

【0004】これらのLGA26やBGA27の接続に
際し、従来は図10に示す電気コネクタ28が使用され
ている。この電気コネクタ28は、弾性絶縁層31を備
え、この厚さ方向に、途中が図示のように屈折した多数
の導電性金属細線32が貫通し、汎用のボールボンダを
用いて結合・埋設され、その各導電性金属細線32の一
方の端部にはLGA26のランド状電極24に接触する
扁平球状の接点部33が、また他方の端部には検査基板
34の基板用電極35に接触するボール状の接点部36
が、それぞれの外表面を弾性絶縁層31より露出して形
成されている。
In connecting the LGA 26 and the BGA 27, an electric connector 28 shown in FIG. 10 is conventionally used. The electrical connector 28 includes an elastic insulating layer 31. In the thickness direction, a large number of conductive metal wires 32 whose middle portions are bent as shown in the drawing penetrate, and are connected and buried using a general-purpose ball bonder. A flat spherical contact portion 33 that contacts the land-shaped electrode 24 of the LGA 26 is provided at one end of each conductive metal thin wire 32, and a ball that contacts the substrate electrode 35 of the test board 34 is provided at the other end. Contact part 36
Are formed with their outer surfaces exposed from the elastic insulating layer 31.

【0005】[0005]

【発明が解決しようとする課題】この電気コネクタ28
は、LGA26と検査基板34との間に導通可能に介在
配置され、LGA26を押圧することで弾性絶縁層31
を圧縮させ、LGA26と検査基板34とを電気的に導
通させることで検査等に供される。しかし、この電気コ
ネクタ28が図11に示すように横にずらす方向に圧縮
されると、扁平球状の接点部33やボール状の接点部3
6が弾性絶縁層31に埋没するので、各接点部33、3
6のランド状電極24及び基板用電極35との接触が不
完全になり、接続抵抗がバラツキやすいという問題があ
った。
SUMMARY OF THE INVENTION
Is disposed between the LGA 26 and the inspection board 34 so as to be able to conduct, and the elastic insulating layer 31 is pressed by pressing the LGA 26.
Is compressed, and the LGA 26 and the inspection board 34 are electrically connected to each other for inspection or the like. However, when the electrical connector 28 is compressed in a direction to be shifted laterally as shown in FIG. 11, the flat spherical contact portion 33 and the ball-shaped contact portion 3 are compressed.
6 are buried in the elastic insulating layer 31 so that the contact portions 33, 3
No. 6, the contact between the land-like electrode 24 and the substrate electrode 35 becomes incomplete, and the connection resistance is likely to vary.

【0006】また、端子数が増えると安定した導通を得
るのに必要な圧縮荷重が増大するが、LGAの平坦度
(最大0.15mm)を考慮すると電気コネクタには
0.15mm以上の圧縮量が必要になる。しかし、電極
の突出がほとんどない平板状のLGAに対しては、圧縮
時に弾性絶縁層の逃げ場がなく、圧縮荷重が増大してL
GAが破損するおそれがあり、200ピン以上の多極L
GAには従来の電気コネクタの使用が困難であるという
問題があった。
When the number of terminals increases, the compressive load required to obtain stable conduction increases. However, considering the flatness of LGA (maximum 0.15 mm), the amount of compression of the electrical connector is 0.15 mm or more. Is required. However, with respect to a flat LGA having almost no electrode protrusion, there is no escape of the elastic insulating layer during compression, and the compression load increases to reduce the LGA.
The GA may be damaged.
GA has a problem that it is difficult to use a conventional electric connector.

【0007】そこで、本発明は、各端子の接続抵抗のバ
ラツキを抑制し、圧縮荷重を低減させ、多極のLGA、
BGA等にも使用できる電気コネクタ及びその製造方法
の提供を目的とする。
[0007] Therefore, the present invention suppresses the variation of the connection resistance of each terminal, reduces the compressive load, and provides a multi-pole LGA,
An object of the present invention is to provide an electrical connector that can be used for a BGA or the like and a method for manufacturing the same.

【0008】[0008]

【課題を解決するための手段】本発明の電気コネクタ
は、一方の端部に扁平球状の接点部を、他方の端部に球
状の接点部をそれぞれ備えた複数の導電性金属細線が、
弾性絶縁層の厚さ方向に、その表裏両面から前記両接点
部を露出して貫設された電気コネクタであって、導電性
金属細線の扁平球状の接点部を被覆して伏皿状のメッキ
層を設けるとともに、球場の接点部を被覆して半球状の
メッキ層を設けている。
The electric connector according to the present invention comprises a plurality of conductive metal wires each having a flat spherical contact portion at one end and a spherical contact portion at the other end.
An electrical connector penetrating the elastic insulating layer by exposing the contact portions from both front and back surfaces in a thickness direction of the elastic insulating layer. In addition to providing a layer, a hemispherical plating layer is provided to cover the contact portion of the stadium.

【0009】本発明の電気コネクタの製造方法は、基板
に複数の皿状凹部を設け、各皿状凹部内にメッキ層を設
ける工程、複数の導電性金属細線の一方の端部に扁平球
状の接点部を設けた後、各導電性金属細線を扁平球状の
接点部において前記各メッキ層に植設する工程、各導電
性金属細線の他方の端部に球状の接点部を形成する工
程、前記基板及びメッキ層の表面から弾性絶縁層を硬化
形成する工程、各導電性金属細線の球状の接点部が弾性
絶縁層から露出させる工程、及び弾性絶縁層から露出す
る各球状の接点部に半球状のメッキ層を形成する工程か
らなっている。
In the method for manufacturing an electrical connector according to the present invention, a plurality of dish-shaped recesses are provided on a substrate, and a plating layer is provided in each of the dish-shaped recesses. After the contact portion is provided, a step of implanting each conductive metal thin wire in each of the plating layers at the flat spherical contact portion, a step of forming a spherical contact portion at the other end of each conductive metal thin wire, A step of hardening and forming the elastic insulating layer from the surface of the substrate and the plating layer, a step of exposing the spherical contact portion of each conductive metal wire from the elastic insulating layer, and a hemispherical surface on each spherical contact portion exposed from the elastic insulating layer. Of forming a plating layer.

【0010】[0010]

【発明の実施の形態】図1は、本発明の電気コネクタの
実施の形態を例示した縦断面説明図である。1は弾性絶
縁層であり、この厚さ方向には、ICパッケージの外部
端子や検査基板の電極との電気的接続を得るための複数
の導電性金属細線2が貫設されている。導電性金属細線
2の一方の端部には扁平球状の接点部3があり、これを
被覆して接触面積を水平方向に広げた伏皿状のメッキ層
4、特には第一ないし第三のメッキ層4a〜4cが設け
られていて、全体としてパッド状の端子部5を形成して
いる。また、導電性金属細線2の他方の端部には球状の
接点部6があって、これを被覆して接触面積を垂直方向
に広げた半球状のメッキ層7、特には第一ないし第二の
メッキ層7a〜7bが設けられて、同様に半球状の端子
部8を形成している。
DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is an explanatory longitudinal sectional view illustrating an embodiment of an electric connector according to the present invention. Reference numeral 1 denotes an elastic insulating layer, and a plurality of conductive metal wires 2 for obtaining electrical connection with external terminals of an IC package and electrodes of an inspection board are penetrated in the thickness direction. At one end of the conductive metal thin wire 2, there is a flat spherical contact portion 3, which covers the contact portion 3 and has a contact area extending in the horizontal direction. Plating layers 4a to 4c are provided to form pad-shaped terminal portions 5 as a whole. At the other end of the conductive metal thin wire 2, there is a spherical contact portion 6, which covers the contact portion 6 and extends the contact area in the vertical direction. The plating layers 7a to 7b are provided to similarly form the hemispherical terminal portions 8.

【0011】導電性金属細線2の扁平球状の接点部3と
球状の接点部6は、それぞれ弾性絶縁層1の表裏両面か
ら一部が露出して設けられ、両接点部3、6とそれぞれ
のメッキ層4、7との結合は、溶着、接着等の任意の方
法により行われる。各導電性金属細線2は図示のように
屈折しているのが好ましく、これにより扁平球状の接点
部3が反復押圧されたときに弾性絶縁層1中に埋設され
た導電性金属細線2が損傷されるのを防止している。
The flat spherical contact portion 3 and the spherical contact portion 6 of the conductive metal thin wire 2 are provided so as to be partially exposed from both the front and back surfaces of the elastic insulating layer 1, respectively. Bonding with the plating layers 4 and 7 is performed by an arbitrary method such as welding or adhesion. Each conductive metal wire 2 is preferably bent as shown in the figure, so that when the flat spherical contact portion 3 is repeatedly pressed, the conductive metal wire 2 embedded in the elastic insulating layer 1 is damaged. Is prevented.

【0012】弾性絶縁層1の形成に用いられるエラスト
マー材料としては、硬化前に流動性を示し、硬化後に架
橋構造を形成し、硬化後でも常温付近でゴム状弾性を有
するものが好ましい。例えば、シリコーン系ゴム、フッ
素化ゴム、ポリブタジエンゴム、ポリイソプレンゴム、
ポリウレタンゴム、クロロプレンゴム、ポリエステル系
ゴム、スチレン−ブタジエン共重合体ゴム、天然ゴム
等、またはこれらの材料に独立もしくは連続気泡を形成
した発泡体材料等が挙げられる。特に硬化後の電気絶縁
性、耐熱性、圧縮永久歪に優れているシリコーンゴムが
好ましく、その中でも導電性金属細線の配列を崩さずに
材料を注入することができること、短時間でレベリング
することができること等から、硬化前の性状が液状で低
粘度の、粘度1,000P以下、特には200P以下、
通常5P以上のものがよい。得られた弾性絶縁層1の硬
度は、高すぎると圧縮接続時の荷重が大きくなり、低す
ぎると圧縮永久歪が大きくなるので、10〜80°H、
特には20〜50°Hが望ましい。
The elastomer material used for forming the elastic insulating layer 1 is preferably one which exhibits fluidity before curing, forms a crosslinked structure after curing, and has rubber-like elasticity at around room temperature even after curing. For example, silicone rubber, fluorinated rubber, polybutadiene rubber, polyisoprene rubber,
Examples include polyurethane rubber, chloroprene rubber, polyester rubber, styrene-butadiene copolymer rubber, natural rubber, and the like, and foam materials in which closed or open cells are formed from these materials. In particular, silicone rubber, which is excellent in electrical insulation after curing, heat resistance, and compression set, is preferable. Among them, it is possible to inject a material without breaking the arrangement of the conductive metal wires, and to perform leveling in a short time. Because it can be performed, the properties before curing are liquid and low viscosity, and the viscosity is 1,000 P or less, particularly 200 P or less,
Usually, 5P or more is good. If the hardness of the obtained elastic insulating layer 1 is too high, the load at the time of compression connection increases, and if it is too low, the compression set increases.
In particular, 20 to 50 ° H is desirable.

【0013】導電性金属細線2には、金、金合金、プラ
チナ、銅、アルミニウム、アルミニウム−ケイ素合金、
真鍮、リン青銅、ベリリウム銅、ニッケル、タングステ
ンまたはステンレス鋼等からなるワイヤ、これらに金や
金合金、ニッケル等のメッキ加工を施したワイヤ等が用
いられるが、特にワイヤボンディングによる接合に適し
導電性に優れた金ワイヤが好ましい。線径については、
特に制限はないが接続時の荷重を出来るだけ小さくし、
接続の安定性に悪影響を与えない範囲で細い方が好まし
い。より具体的には通常のワイヤボンディングで使用さ
れているφ100μm以下のものが入手しやすいので望
ましい。特にはφ20〜80μmのワイヤを使用するこ
とが望ましい。
The conductive thin metal wires 2 include gold, gold alloy, platinum, copper, aluminum, aluminum-silicon alloy,
Wires made of brass, phosphor bronze, beryllium copper, nickel, tungsten, stainless steel, etc., and wires plated with gold, gold alloy, nickel, etc. are used. A gold wire excellent in quality is preferred. About wire diameter,
Although there is no particular limitation, minimize the load at the time of connection,
It is preferable that the diameter is small as long as the connection stability is not adversely affected. More specifically, those having a diameter of 100 μm or less used in ordinary wire bonding are preferable because they are easily available. In particular, it is desirable to use a wire of φ20 to 80 μm.

【0014】導電性金属細線の形状としては、接合や接
続時の屈曲防止、荷重の低減の観点から、略N字状、く
の字状、横S字状、横U字状、横Ω状に形成される。ま
た、略N字状等の直線部分が存在する場合には、電気コ
ネクタの厚さが0.5〜2mmと薄く、検査や接続の圧
縮に関して絶縁層の弾性特性を利用することから直線部
分を0.2〜0.5mm、特には0.2〜0.3mmの
長さとするのが好ましい。
From the viewpoints of preventing bending during joining and connection and reducing the load, the shape of the conductive metal thin wire is substantially N-shaped, square-shaped, horizontal S-shaped, horizontal U-shaped, horizontal Ω-shaped. Formed. In addition, when there is a linear portion such as a substantially N-shape, the thickness of the electric connector is as thin as 0.5 to 2 mm, and the elastic portion of the insulating layer is used for inspection and compression of connection. The length is preferably 0.2 to 0.5 mm, particularly preferably 0.2 to 0.3 mm.

【0015】伏皿状のメッキ層4を構成する第一のメッ
キ層4aには金、銀、パラジウム、パラジウム−ニッケ
ル合金、ニッケル、ロジウム、ルテニウム等が使用でき
る。このメッキ層4aはICパッケージの外部端子と接
触する層であるため、接触抵抗の低い金メッキが好まし
く、また繰り返し圧接される検査の用途においては、耐
摩耗性の面から硬質金メッキとすることが好ましい。メ
ッキ層4aの厚さは0.1〜2μm が好ましいが、接触
抵抗、耐摩耗性、コストを考慮すると0.1〜1μm が
より好ましい。
The first plating layer 4a constituting the plate-shaped plating layer 4 can be made of gold, silver, palladium, a palladium-nickel alloy, nickel, rhodium, ruthenium, or the like. Since this plating layer 4a is a layer that comes into contact with the external terminals of the IC package, gold plating having low contact resistance is preferable, and in the case of an inspection application that is repeatedly pressed, hard gold plating is preferable in terms of wear resistance. . The thickness of the plating layer 4a is preferably 0.1 to 2 μm, but more preferably 0.1 to 1 μm in consideration of contact resistance, wear resistance and cost.

【0016】第二のメッキ層4bは上記第一の硬質金メ
ッキによるメッキ層4aだけでは繰り返し圧縮時の耐摩
耗性が十分とはいえず、また硬質金メッキのみで厚くメ
ッキすると、コストがかかり生産性及び実用上におい
て、使用しきれないため、強度アップ及びコスト的な面
から硬質金メッキよりも硬いニッケル、ニッケル合金等
を用いるのがよい。メッキ層4bの厚さは2〜50μm
が好ましいが、強度、コストを考慮すると5〜30μm
がより好ましい。第三のメッキ層4cは上記第二のメッ
キ層4bではボンディング性が悪いため、ワイヤボンデ
ィング性アップの目的から金、銀、パラジウム等を用い
るのがよい。なかでも金メッキが最も好ましい。メッキ
層4cの厚さは0.05〜1μmが好ましいが、ワイヤ
ボンディング性、コストを考慮すると0.1〜0.5μ
mがより好ましい。
The second plating layer 4b cannot be said to have sufficient abrasion resistance when repeatedly compressed by using the plating layer 4a made of the first hard gold plating alone, and if the plating is made thick only with the hard gold plating, cost and productivity are increased. Further, in practical use, nickel or nickel alloy, which is harder than hard gold plating, is preferably used from the viewpoints of strength increase and cost reduction because it cannot be used. The thickness of the plating layer 4b is 2 to 50 μm
However, considering strength and cost, it is 5 to 30 μm.
Is more preferred. Since the third plating layer 4c has poor bonding properties with the second plating layer 4b, gold, silver, palladium or the like is preferably used for the purpose of improving wire bonding properties. Among them, gold plating is most preferable. The thickness of the plating layer 4c is preferably 0.05 to 1 μm, but is 0.1 to 0.5 μm in consideration of wire bonding properties and cost.
m is more preferred.

【0017】半球状のメッキ層7を構成する第一のメッ
キ層7aは、球状の接点部6の弾性絶縁層1からの突出
量を増やし、かつ拡径化させるためのもので、金、銀、
錫、ニッケル等が使用できるが、メッキ層の耐摩耗性、
コスト、メッキの成長スピードの面から硬いニッケルメ
ッキが好ましい。メッキ層の厚さは厚いほどよいが、コ
ストの面から100μm以下とするのが好ましい。しか
し、厚さが30μm以下になると弾性絶縁層1からの突
出量が不十分になり、また圧縮時に弾性絶縁層1への陥
没のおそれがあるので好ましくない。第二のメッキ層7
bは、繰り返し使用されることがないICパッケージの
実装、接続においては通常の金メッキでよいが、検査用
の接続においては接点部の損傷、摩耗を防止する観点か
ら硬質金メッキを0.1〜2μm施すのがよい。
The first plating layer 7a constituting the hemispherical plating layer 7 is for increasing the amount of protrusion of the spherical contact portion 6 from the elastic insulating layer 1 and increasing the diameter thereof. ,
Tin, nickel, etc. can be used, but the wear resistance of the plating layer,
Hard nickel plating is preferred in terms of cost and plating growth speed. The thickness of the plating layer is preferably as large as possible, but is preferably 100 μm or less from the viewpoint of cost. However, when the thickness is 30 μm or less, the amount of protrusion from the elastic insulating layer 1 becomes insufficient, and there is a possibility that the elastic insulating layer 1 may be depressed during compression. Second plating layer 7
b may be normal gold plating for mounting and connection of an IC package that is not repeatedly used, but for connection for inspection, hard gold plating is 0.1 to 2 μm from the viewpoint of preventing damage and abrasion of contact portions. It is better to apply.

【0018】次に、本発明の電気コネクタの製造方法の
実施の形態を、縦断面説明図として工程順に例示した図
2〜図7に基づいて説明する。図2a〜図2dは導電性
金属細線2の一端に装着される伏皿状のメッキ層4を、
基板9から得る方法を工程順に示している。これにはま
ず図2aに示すように、基板9の一方の面に接続するI
Cパッケージの外部端子のピッチ、配列に合わせて最終
的に皿状凹部11を設けたい部分以外の場所にエッチン
グレジスト膜10を形成し、他方の面には全面を覆うよ
うにエッチングレジスト膜10を形成する。次いで図2
bに示すように、塩化鉄溶液にて基板9’の厚さの40
〜70%の深さにエッチングして皿状凹部11を形成す
る。続いて図2cに示すように、エッチングレジスト膜
10をそのままメッキ用のレジストとして使用し、エッ
チングによる皿状凹部11にメッキ層4、特には第一の
メッキ層4a、第二のメッキ層4b、第三のメッキ層4
cを順次形成する。最後に図2dに示すように、エッチ
ングレジスト膜10を水酸化ナトリウム溶液にて剥離し
てボンディング用基板9を作製する。
Next, an embodiment of a method for manufacturing an electrical connector according to the present invention will be described with reference to FIGS. FIG. 2A to FIG. 2D show a plate-shaped plating layer 4 attached to one end of the conductive thin metal wire 2.
The method of obtaining from the substrate 9 is shown in the order of steps. For this, first, as shown in FIG.
An etching resist film 10 is formed in a portion other than the portion where the dish-shaped concave portion 11 is to be finally provided in accordance with the pitch and arrangement of the external terminals of the C package, and the etching resist film 10 is formed on the other surface so as to cover the entire surface. Form. Then Figure 2
As shown in FIG. 2B, the thickness of the substrate 9 'is reduced to 40 by an iron chloride solution.
The dished recess 11 is formed by etching to a depth of about 70%. Subsequently, as shown in FIG. 2C, the etching resist film 10 is used as it is as a plating resist, and the plating layer 4, particularly the first plating layer 4a, the second plating layer 4b, Third plating layer 4
c are sequentially formed. Finally, as shown in FIG. 2D, the etching resist film 10 is peeled off with a sodium hydroxide solution to produce a bonding substrate 9.

【0019】この際、適用されるボンディング用基板9
の材質としては、銅、銅合金、鉄ニッケル合金等が挙げ
られるが、これらの内では特に熱膨張が小さく、加工性
(ボンディング性、弾性絶縁層形成時の低歪み性やエッ
チング性)、コストの観点から鉄ニッケル合金が好まし
い。ボンディング用基板9の厚さは、それ自体の強度と
しては0.05〜0.5mmの範囲で使用可能である
が、これが0.1mm未満ではエッチングにより形成可
能な皿状凹部11の深さが浅くなり、結果としてパッド
状の端子部5の弾性絶縁層1面からの突出量が少なくな
り、荷重の面から不十分となる。また0.25mmを超
えるとエッチング時間が長くなりコストアップにつなが
るため、特には0.1〜0.25mmが望ましい。
At this time, the bonding substrate 9 to be applied is
Examples of the material include copper, copper alloy, iron-nickel alloy and the like. Among them, particularly, thermal expansion is small, workability (bonding property, low distortion property and etching property when forming an elastic insulating layer), cost. In view of this, an iron-nickel alloy is preferable. The thickness of the bonding substrate 9 can be used within the range of 0.05 to 0.5 mm as its own strength, but if the thickness is less than 0.1 mm, the depth of the dish-shaped concave portion 11 that can be formed by etching is reduced. As a result, the amount of protrusion of the pad-like terminal portion 5 from the surface of the elastic insulating layer 1 decreases, and the pad-like terminal portion 5 becomes insufficient in terms of load. On the other hand, if the thickness exceeds 0.25 mm, the etching time becomes longer, leading to an increase in cost.

【0020】皿状凹部11の大きさ及び外郭形状は、L
GA、BGAに対してはランド状電極、半田ボール電極
が一般に0.2〜0.75mm角またはφ0.3〜0.
75mmであること、端子間の絶縁性を確保しながら半
田ボール電極の位置精度や端子部の位置精度を考慮する
必要性があることから、円形、小判形、四角形、多角形
または楕円形等に適宜形成すればよく、特に円形の場合
には、皿状凹部の底でφ0.2〜0.8mmの範囲内と
するのが好ましい。また皿状凹部の深さは基板9’の厚
さの40〜70%とするのが好ましい。これが40%未
満ではパッド状の端子部5の突出量が少なく、コネクタ
の圧縮量0.15mm以上を考慮すると荷重の面から突
出量が不十分である。他方、70%を超えると基板の強
度が不十分であったり、貫通穴が発生してしまうおそれ
がある。
The size and outer shape of the dish-shaped recess 11 are L
For GA and BGA, land-shaped electrodes and solder ball electrodes are generally 0.2 to 0.75 mm square or φ0.3 to 0.3 mm.
75 mm, it is necessary to consider the positional accuracy of the solder ball electrode and the position of the terminal part while ensuring the insulation between the terminals. Therefore, the shape should be circular, oval, square, polygonal, or elliptical. It may be formed appropriately, and in particular, in the case of a circular shape, it is preferable that the diameter is in the range of φ0.2 to 0.8 mm at the bottom of the dish-shaped recess. Further, the depth of the dish-shaped recess is preferably set to 40 to 70% of the thickness of the substrate 9 '. If this is less than 40%, the amount of protrusion of the pad-like terminal portion 5 is small, and the amount of protrusion is insufficient from the viewpoint of load when the amount of compression of the connector is 0.15 mm or more. On the other hand, if it exceeds 70%, the strength of the substrate may be insufficient or through holes may be generated.

【0021】図3は、前述した材質、線径、形状の、複
数の導電性金属細線2も、汎用のワイヤボンダーにより
前記ボンディング用基板9の伏皿状のメッキ層4に植設
する工程を、また図4はボンディング後、各導電性金属
細線2の他方の端部にレーザーを照射して球状の接点部
6を形成する工程を示している。さらに、図5は前記ボ
ンディング用基板9及び伏皿状のメッキ層4の表面に弾
性絶縁層1を、各導電性金属細線2の球状の接点部6が
弾性絶縁層1から露出するように硬化形成する工程を示
すもので、具体的には基板9の周縁にそって予め成形用
フレーム(図示せず)を配置し、前述した弾性絶縁層形
成用エラストマー材料を球状接点部を覆うまで注入、硬
化させた後、周知のレーザー照射を行って、図6aに示
すように、弾性絶縁層1を球状の接点部6が0.03〜
0.1mm露出するように加工することで行われる。
FIG. 3 shows a process of implanting a plurality of conductive metal wires 2 of the above-mentioned material, wire diameter and shape on the plate-shaped plating layer 4 of the bonding substrate 9 by a general-purpose wire bonder. FIG. 4 shows a step of forming a spherical contact portion 6 by irradiating a laser to the other end of each conductive metal wire 2 after bonding. Further, FIG. 5 shows that the elastic insulating layer 1 is hardened on the surfaces of the bonding substrate 9 and the flat-plated plating layer 4 so that the spherical contact portions 6 of the conductive metal wires 2 are exposed from the elastic insulating layer 1. Specifically, a molding frame (not shown) is arranged in advance along the periphery of the substrate 9, and the above-described elastomer material for forming an elastic insulating layer is injected until the spherical contact portion is covered. After curing, the well-known laser irradiation is performed, and as shown in FIG.
This is performed by processing so as to expose 0.1 mm.

【0022】ここで用いられる成形用フレームとして
は、汎用のエンジニアリングプラスチック材、セラミッ
ク材または金属材料を適宜選択して使用することができ
る。エンジニアリングプラスチック材としては、寸法安
定性や耐熱性に優れるポリエーテルイミド(以下、PE
Iと略称する)、ポリフェニレンサルファイド(以下、
PPSと略称する)、ポリエーテルスルホン(以下、P
ESと略称する)等の材料が挙げられる。
As the molding frame used here, general-purpose engineering plastic materials, ceramic materials or metal materials can be appropriately selected and used. As an engineering plastic material, polyetherimide (hereinafter referred to as PE) with excellent dimensional stability and heat resistance
I), polyphenylene sulfide (hereinafter, referred to as I)
PPS), polyether sulfone (hereinafter referred to as P
(Abbreviated as ES).

【0023】図6は、弾性絶縁層1から露出する球状の
接点部6に半球状のメッキ層7を形成する工程を示し、
具体的にはボンディング用基板9を電極として露出した
球状の接点部6の表面に第一のメッキ層7aを30〜1
00μmの厚さに施し、更にその上に第二のメッキ層7
bを0.1〜2μmの厚さに施して半球状の端子部8を
形成する。最後に、ボンディング用基板9の非メッキ部
分を公知のエッチング処理により除去し、パッド状の端
子部5を取り出せば、図1に例示した本発明の電気コネ
クタが得られる。
FIG. 6 shows a step of forming a hemispherical plating layer 7 on the spherical contact portion 6 exposed from the elastic insulating layer 1,
Specifically, the first plating layer 7a is coated on the surface of the spherical contact portion 6 where the bonding substrate 9 is exposed as an electrode by 30-1.
A second plating layer 7
b is applied to a thickness of 0.1 to 2 μm to form hemispherical terminal portions 8. Finally, the non-plated portion of the bonding substrate 9 is removed by a known etching process, and the pad-shaped terminal portion 5 is taken out, whereby the electrical connector of the present invention illustrated in FIG. 1 is obtained.

【0024】本発明によれば、パッド状の端子部5と半
球状の端子部8をともに大型化させて形成したため、圧
縮により両端子部5、8が弾性絶縁層1に埋没すること
がなく、各端子の接続抵抗がバラツクという問題を確実
に解消することができる。また表裏とも両端子部5、8
を弾性絶縁層1から大きく突出させているため、両端子
部5、8に応力を集中させて接触抵抗の低い安定した接
続を実現し、さらに0.15mm以上圧縮した場合でも
荷重をきわめて小さく抑制することができる。
According to the present invention, since both the pad-shaped terminal portion 5 and the hemispherical terminal portion 8 are formed in a large size, the terminal portions 5 and 8 are not buried in the elastic insulating layer 1 by compression. In addition, the problem that the connection resistance of each terminal varies can be reliably solved. Both terminals 5, 8 on both sides
Is greatly projected from the elastic insulating layer 1, so that stress is concentrated on both terminal portions 5, 8 to realize a stable connection with low contact resistance, and furthermore, the load is extremely small even when compressed by 0.15 mm or more. can do.

【0025】特に、電極の突出がほとんどなく平坦な板
状であるLGAに対しては、圧縮時の弾性絶縁層1の逃
げ場が生まれ、0.15mm以上圧縮した場合でも荷重
をきわめて小さく抑制できる。またパッド状の端子部
5、半球状の端子部8ともに表面に硬質金メッキを施す
ことにより、半球状の端子部8の摩耗防止が期待でき
る。これらにより、例え0.15mm以上の圧縮量で電
気コネクタを継続的に使用しても、各端子の接続抵抗の
上昇を著しく抑制することが可能となり、電気コネクタ
の耐久性を大幅に向上させることができる。
In particular, in the case of an LGA having a flat plate shape with almost no electrode protrusion, a relief area of the elastic insulating layer 1 is generated during compression, and the load can be suppressed to a very small value even when the LGA is compressed by 0.15 mm or more. Further, by applying hard gold plating to the surfaces of both the pad-shaped terminal portion 5 and the hemispherical terminal portion 8, it is expected that the semi-spherical terminal portion 8 is prevented from being worn. As a result, even if the electrical connector is continuously used with a compression amount of 0.15 mm or more, it is possible to significantly suppress the increase in the connection resistance of each terminal, and to greatly improve the durability of the electrical connector. Can be.

【0026】[0026]

【実施例】[実施例1]以下、LGA検査用の本発明の
電気コネクタの実施例を示す。まず図2aに示すよう
に、厚さ0.15mm、縦50mm、横50mmの鉄ニ
ッケル合金(ニッケル41%)製基板の中心部表面に、
ピッチ1mmで縦、横それぞれ40列(総数1,60
0)のマトリックス状に0.4mm角の部分を残して、
厚さ約7μmのカゼインレジスト層を形成し、基板裏面
には全面を覆うように厚さ約7μmのカゼインレジスト
層を形成した。これを図2b〜図2dに示すように、塩
化第二鉄溶液にて表面より0.075mmの深さでエッ
チングを施し、その凹み部分に、第一のメッキ層として
硬質金メッキを1μm 、第二のメッキ層としてニッケル
メッキを20μm、次いで第三のメッキ層として金メッ
キを0.2μmそれぞれ施した。続いてカゼインレジス
ト層を5%水酸化ナトリウム溶液により剥離し、ボンデ
ィング用の基板を得た。
[Embodiment 1] An embodiment of an electrical connector of the present invention for LGA inspection will be described below. First, as shown in FIG. 2A, a 0.15 mm thick, 50 mm long, 50 mm wide iron-nickel alloy (nickel 41%) substrate has a central surface thereof,
40 rows each vertically and horizontally with a pitch of 1 mm (total 1,60
0) leaving a 0.4 mm square portion in the matrix of
A casein resist layer having a thickness of about 7 μm was formed, and a casein resist layer having a thickness of about 7 μm was formed on the rear surface of the substrate so as to cover the entire surface. As shown in FIGS. 2b to 2d, this was etched with a ferric chloride solution to a depth of 0.075 mm from the surface. Of nickel plating was applied as a plating layer of 20 μm, and then gold plating was applied as a third plating layer of 0.2 μm. Subsequently, the casein resist layer was peeled off with a 5% sodium hydroxide solution to obtain a bonding substrate.

【0027】次に、この第三のメッキ層である金メッキ
部分の中心に、汎用のボールボンダーを用いて直径50
μmの金線をピッチ1mmで、縦横それぞれ40列(総数
1,600)のマトリクス状にボンディング配置した。
このときの金線は、図3に示すように垂直に約0.3m
m、角度45°にて0.5mmオフセットさせ、さらに
垂直な方向に伸ばした形状のものを用いた。次いで図4
に示すように、これらの金線すべての先端にアルゴンレ
ーザー光を照射して先端に直径が100μmの球状接点
部を形成し、その高さが1.0mmで均一になるように
揃えた。さらに、この基板上の外縁に沿って、縦横それ
ぞれ50mm、高さ1.1mm、幅5mmのPEI製の
成型用フレームを配置した。
Next, in the center of the gold plating portion which is the third plating layer, a diameter of 50 mm is applied using a general-purpose ball bonder.
The gold wires of μm were arranged by bonding in a matrix of 40 rows (1,600 in total) in each of vertical and horizontal directions at a pitch of 1 mm.
The gold wire at this time is about 0.3 m vertically as shown in FIG.
m, offset by 0.5 mm at an angle of 45 °, and further extended in the vertical direction. Then FIG.
As shown in Table 2, the tips of all of these gold wires were irradiated with argon laser light to form spherical contact portions with a diameter of 100 μm at the tips, and the heights of the contacts were made uniform at 1.0 mm. Further, a PEI molding frame having a length and width of 50 mm, a height of 1.1 mm and a width of 5 mm was arranged along the outer edge of the substrate.

【0028】次に、図5に示すように、この成型用フレ
ームの枠内に、硬化後のゴム硬度が25°H(JIS
A)になる二液性シリコーンゴム:KE1216A/B [信越化
学工業社製、商品名]各50重量部と着色剤:K-Color-BK
-02 [信越化学工業社製、商品名]10重量部との混合
物を、金線の球状接点部の先端より0.1mm高くなる
量注入し、120℃で30分間加熱処理して硬化させ
た。
Next, as shown in FIG. 5, the rubber hardness after curing is 25 ° H (JIS) in the frame of the molding frame.
A) Two-component silicone rubber: KE1216A / B [Shin-Etsu Chemical Co., Ltd., trade name] 50 parts by weight and colorant: K-Color-BK
-02 [Shin-Etsu Chemical Co., Ltd., trade name] A mixture with 10 parts by weight was injected in an amount 0.1 mm higher than the tip of the spherical contact portion of the gold wire, and was cured by heating at 120 ° C. for 30 minutes. .

【0029】次いで、YAGレーザー光をスキャニング
照射して金線の球状接点部を覆っているシリコーンゴム
を、図6に示すように、金線の球状接点部がシリコーン
ゴム面から50μm突出するまで除去し、続いてボンデ
ィング用基板を電極として電解法にて露出させた金線の
球状接点部に75μmのニッケルメッキを施し、さらに
その上に硬質金メッキを2μm施した。続いて基板を塩
化第二鉄溶液によりエッチング処理してトップφ0.3
mm、ボトムφ0.4mmで突出量が0.075mmで
ある断面が略台形状のパッド状の端子部を露出させた。
これを十分洗浄した後、200℃で1時間のアフターキ
ュア処理を行い、本発明の電気コネクタを得た。
Next, the silicon rubber covering the spherical contact portion of the gold wire is removed by scanning irradiation with a YAG laser beam until the spherical contact portion of the gold wire projects 50 μm from the silicone rubber surface as shown in FIG. Subsequently, the spherical contact portion of the gold wire exposed by the electrolytic method using the bonding substrate as an electrode was plated with 75 μm of nickel, and hard gold was further plated thereon with 2 μm. Subsequently, the substrate is etched with a ferric chloride solution to form a top φ0.3.
mm, a bottom φ0.4 mm and a protruding amount of 0.075 mm expose a pad-shaped terminal portion having a substantially trapezoidal cross section.
After this was sufficiently washed, an after-curing treatment was performed at 200 ° C. for 1 hour to obtain an electric connector of the present invention.

【0030】この電気コネクタをφ0.5mmの金メッ
キランド電極を1mmピッチで、縦横それぞれ40列の
マトリクス状に有するLGAと検査基板間で0.15m
m圧縮したところ安定した導通が得られ、各電極の抵抗
のバラツキが10〜20mΩと小さく、また荷重は15
gf/ピンと低く、LGAの電気的特性試験をする上で全
く問題がなかった。さらに0.15mmの圧縮量にて繰
り返し圧縮を行い電気的接続を継続的に確認したとこ
ろ、10万回を超えても抵抗が100mΩを超えるポイ
ントは発生しなかった。
This electrical connector is 0.15 m between an LGA having gold-plated land electrodes of φ0.5 mm at a pitch of 1 mm and a matrix of 40 columns each in the vertical and horizontal directions and the inspection board.
m, a stable continuity is obtained, the resistance variation of each electrode is as small as 10 to 20 mΩ, and the load is 15
It was as low as gf / pin, and there was no problem in conducting an electrical property test of LGA. Further, the electrical connection was continuously confirmed by repeatedly compressing with a compression amount of 0.15 mm, and no point where the resistance exceeded 100 mΩ was generated even when the electrical connection exceeded 100,000 times.

【0031】[実施例2]以下に、BAG接続用の本発
明の電気コネクタの実施例を示す。図2aに示すよう
に、厚さ0.15mm、縦35mm、横35mmの鉄ニ
ッケル合金(ニッケル41%)製基板の中心部表面に、
ピッチ1.27mmで縦横それぞれ20列(総数40
0)のマトリクス状に、φ0.6mmを残した形で、厚
さ約7μmでカゼインレジスト層を形成し、裏面は全面
を覆うよう厚さ約7μmでカゼインレジスト層を形成し
た。これを図2b〜図2dに示すように、塩化第二鉄溶
液にて表面より0.075mmの深さでエッチングを施
し、エッチングによる凹み部分に第一のメッキ層として
金メッキを0.5μm、第二のメッキ層としてニッケル
メッキを5μm、次いで第三のメッキ層として金メッキ
を0.2μmそれぞれ施した。続いてカゼインレジスト
層を5%水酸化ナトリウム溶液により剥離しボンディン
グ用の基板を得た。
[Embodiment 2] An embodiment of the electrical connector of the present invention for BAG connection will be described below. As shown in FIG. 2A, a 0.15 mm thick, 35 mm long, 35 mm wide iron-nickel alloy (41% nickel) substrate has a central part surface,
20 rows each in vertical and horizontal directions at a pitch of 1.27 mm (total 40
A casein resist layer having a thickness of about 7 μm was formed in the matrix shape of 0) while leaving φ0.6 mm, and a casein resist layer having a thickness of about 7 μm was formed so as to cover the entire back surface. As shown in FIG. 2B to FIG. 2D, this was etched with a ferric chloride solution to a depth of 0.075 mm from the surface, and gold plating was applied as a first plating layer to the recessed portion by etching at 0.5 μm. Nickel plating was applied as a second plating layer at 5 μm, and then gold plating was applied as a third plating layer at 0.2 μm. Subsequently, the casein resist layer was peeled off with a 5% sodium hydroxide solution to obtain a bonding substrate.

【0032】この第三のメッキ層である金メッキ部分の
中心に、汎用のボールボンダーを用いて直径50μmの
金線をピッチ1.27mmで、縦、横それぞれ20列
(総数400)のマトリクス状にボンディング配置し
た。このときの金線は、図3に示すように、垂直に約
0.3mm、角度45°にて0.5mmオフセットさ
せ、さらに垂直な方向に伸ばした形状のものを用いた。
次に、これらの金線すべての先端にアルゴンレーザー光
を照射して、図4に示すように、先端に直径が100μ
mの球状の接点部を形成し、その高さが1.2mmで均
一になるように揃えた。さらに、この基板上の外縁に沿
って縦、横それぞれ35mm、高さ1.3mm、幅5m
mのPEI製の成型用フレームを配置し、この成型用フ
レームの枠内に、硬化後のゴム硬度が25°H(JIS
A)になる二液性のシリコーンゴム:KE1216A/B [信越
化学工業社製、商品名]各50重量部と着色剤:K-Color-
BK-02 [信越化学工業社製、商品名]10重量部との混
合物を、図5に示すように、金線の球状接点部6の先端
より0.1mm高くなる量注入し、120℃で30分間
加熱処理して硬化させた。
In the center of the gold-plated portion, which is the third plating layer, gold wires having a diameter of 50 μm are arranged at a pitch of 1.27 mm using a general-purpose ball bonder at a pitch of 1.27 mm in a matrix of 20 columns in each of vertical and horizontal directions (total number 400). Bonding was arranged. At this time, as shown in FIG. 3, the gold wire used was a shape that was vertically offset by about 0.3 mm, offset by 0.5 mm at an angle of 45 °, and further extended in the vertical direction.
Next, the ends of all of these gold wires were irradiated with argon laser light, and as shown in FIG.
A spherical contact portion of m was formed, and the height was uniformed to be 1.2 mm. Furthermore, along the outer edge on this substrate, 35 mm in length and width, 1.3 mm in height, 5 m in width
m, a PEI molding frame having a rubber hardness of 25 ° H (JIS) after curing is set in the frame of the molding frame.
A) Two-part silicone rubber: KE1216A / B [Shin-Etsu Chemical Co., Ltd., trade name] 50 parts by weight and colorant: K-Color-
A mixture with 10 parts by weight of BK-02 [trade name, manufactured by Shin-Etsu Chemical Co., Ltd.] was injected at a temperature of 120 ° C. at 0.1 ° C., as shown in FIG. It was cured by heat treatment for 30 minutes.

【0033】次いで、図6に示すように、YAGレーザ
ー光をスキャニング照射して金線の球状接点部を覆って
いるシリコーンゴムを、金線の球状接点部がシリコーン
ゴム面から50μm突出するまで除去し、続いてボンデ
ィング用基板を電極として電解メッキにて露出させた金
線の球状接点部に、40μmのニッケルメッキを施し、
さらにその上に金メッキを0.5μm施した。続いてボ
ンディング用基板を塩化第二鉄溶液によりエッチング処
理して、トップφ0.5mm、ボトムφ0.6mmで突
出量が0.075mmであるパッド状の端子部を形成し
た。その後、十分洗浄した後、200℃で1時間のアフ
ターキュア処理を行い本発明の電気コネクタを得た。
Next, as shown in FIG. 6, the silicon rubber covering the spherical contact portion of the gold wire is removed by scanning irradiation with a YAG laser beam until the spherical contact portion of the gold wire projects from the silicone rubber surface by 50 μm. Then, nickel plating of 40 μm was applied to the spherical contact portion of the gold wire exposed by electrolytic plating using the bonding substrate as an electrode,
Further, a gold plating of 0.5 μm was applied thereon. Subsequently, the bonding substrate was etched with a ferric chloride solution to form pad-shaped terminal portions having a top diameter of 0.5 mm, a bottom diameter of 0.6 mm, and a protrusion of 0.075 mm. Thereafter, after sufficient washing, an after-curing treatment was performed at 200 ° C. for 1 hour to obtain an electric connector of the present invention.

【0034】この電気コネクタをφ0.75mm、高さ
0.6mmの半田ボール電極を1.27mmピッチで、
縦横それぞれ20列マトリクス状に有するBGAと検査
基板間で0.2mm圧縮したところ、安定した導通が得
られ、各電極の抵抗のバラツキが15〜25mΩと小さ
く、また荷重は10gf/ピンと低く、BGAの電気的
特性試験をする上で全く問題がなかった。上記実施例の
電気コネクタと従来の電気コネクタの圧縮時の接続抵
抗、圧縮時の荷重、繰り返し使用回数を比較したとこ
ろ、表1に示す結果が得られた。
This electric connector is provided with solder ball electrodes having a diameter of 0.75 mm and a height of 0.6 mm at a pitch of 1.27 mm.
When compression was performed by 0.2 mm between the BGA and the test board having a matrix of 20 columns each in the vertical and horizontal directions, stable conduction was obtained, the resistance variation of each electrode was as small as 15 to 25 mΩ, and the load was as low as 10 gf / pin. There was no problem in conducting an electrical property test of the. Comparison of the connection resistance at the time of compression, the load at the time of compression, and the number of times of repeated use of the electrical connector of the above embodiment and the conventional electrical connector resulted in the results shown in Table 1.

【0035】[0035]

【表1】 [Table 1]

【0036】[0036]

【発明の効果】本発明の電気コネクタによれば、各端子
の接続抵抗のバラツキを抑制し、多極のLGA、BGA
等にも適用することができ、しかも繰り返して使用して
も各端子部が大きいため、圧縮による位置ずれに対応で
きる。また、ICパッケージ及び検査基板の電極の位置
精度、バラツキにおいても十分に対応できることから安
定した接続が可能になる。
According to the electric connector of the present invention, the variation of the connection resistance of each terminal is suppressed, and the multi-pole LGA, BGA
And the like, and since each terminal portion is large even when used repeatedly, it is possible to cope with displacement due to compression. Further, since the positional accuracy and the variation of the electrodes of the IC package and the inspection board can be sufficiently coped with, the stable connection can be achieved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の電気コネクタの縦断面説明図である。FIG. 1 is an explanatory longitudinal sectional view of an electric connector of the present invention.

【図2】図a〜図dはそれぞれ、本発明の電気コネクタ
の製造方法において、基板にメッキ層を設ける工程を、
工程順に示す縦断面説明図である。
FIGS. 2A to 2D respectively show a step of providing a plating layer on a substrate in the method for manufacturing an electrical connector of the present invention;
It is a longitudinal section explanatory view shown in order of a process.

【図3】本発明の電気コネクタの製造方法において、ボ
ンディング用基板上のメッキ層に扁平球状の接点部とし
て導電性金属細線を植設した状態を示す縦断面説明図で
ある。
FIG. 3 is an explanatory longitudinal sectional view showing a state in which a conductive thin metal wire is implanted as a flat spherical contact portion on a plating layer on a bonding substrate in the method for manufacturing an electrical connector of the present invention.

【図4】図3で得られた導電性金属細線の上端部に球状
の接点部を形成した状態を示す縦断面説明図である。
FIG. 4 is an explanatory longitudinal sectional view showing a state in which a spherical contact portion is formed at the upper end of the conductive metal thin wire obtained in FIG. 3;

【図5】図4で得られた導電性金属細線の球状の接点部
が弾性絶縁層から露出するように、前記ボンディング用
基板及びメッキ層の表面に弾性絶縁層を硬化形成した状
態を示す縦断面説明図である。
FIG. 5 is a longitudinal section showing a state in which an elastic insulating layer is hardened and formed on the surfaces of the bonding substrate and the plating layer such that the spherical contact portion of the conductive metal thin wire obtained in FIG. 4 is exposed from the elastic insulating layer; FIG.

【図6】図aおよび図bは、それぞれ、図5で得られた
弾性絶縁層から露出している導電性金属細線の球状の接
点部に半球状のメッキ層を形成する工程の前後の状態を
示す拡大縦断面説明図である。
6A and 6B are states before and after a step of forming a hemispherical plating layer on a spherical contact portion of a conductive metal wire exposed from the elastic insulating layer obtained in FIG. 5, respectively. FIG.

【図7】従来から用いられているQFPの斜視図であ
る。
FIG. 7 is a perspective view of a conventionally used QFP.

【図8】従来から用いられているLGAの平面図であ
る。
FIG. 8 is a plan view of an LGA conventionally used.

【図9】従来から用いられているBGAの斜視図であ
る。
FIG. 9 is a perspective view of a BGA conventionally used.

【図10】従来の電気コネクタの使用状態を示す縦断面
説明図である。
FIG. 10 is an explanatory longitudinal sectional view showing a use state of a conventional electric connector.

【図11】従来の電気コネクタの加圧時の状態を示す縦
断面説明図である。
FIG. 11 is an explanatory longitudinal sectional view showing a state of a conventional electric connector when pressurized.

【符号の説明】[Explanation of symbols]

1…弾性絶縁層 2…導電性金属細線 3…扁平球状の接点部 4、4a、4b、4c…伏皿状のメッキ層 5…パッド状の端子部 6…球状の接点部 7、7a、7b…半球状のメッキ層 8…半球状の端子部 9…ボンディング用基板 9’…基板 10…エッチングレジスト膜 27…BGA 11…皿状凹部 28…電気コ
ネクタ 21…ICパッケージ本体 31…弾性絶
縁層 22…端子 32…導電性
金属細線 23…QFP 33…扁平球
状の接点部 24…ランド状電極 34…検査基
板 25…半田ボール電極 35…基板用
電極 26…LGA 36…ボール
状の接点部
DESCRIPTION OF SYMBOLS 1 ... Elastic insulating layer 2 ... Conductive thin metal wire 3 ... Flat spherical contact part 4, 4a, 4b, 4c ... Plate-shaped plating layer 5 ... Pad-shaped terminal part 6 ... Spherical contact part 7, 7a, 7b ... hemispherical plating layer 8 ... hemispherical terminal part 9 ... bonding substrate 9 '... substrate 10 ... etching resist film 27 ... BGA 11 ... dish-shaped recess 28 ... electric connector 21 ... IC package body 31 ... elastic insulating layer 22 ... Terminals 32 ... Conducting metal wires 23 ... QFP 33 ... Spherical contact parts 24 ... Land-shaped electrodes 34 ... Inspection board 25 ... Solder ball electrodes 35 ... Board electrodes 26 ... LGA 36 ... Ball-shaped contact parts

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 一方の端部に扁平球状の接点部を、他方
の端部に球状の接点部をそれぞれ備えた複数の導電性金
属細線が、弾性絶縁層の厚さ方向に、その表裏両面から
両接点部を露出して貫設された電気コネクタであって、
導電性金属細線の扁平球状の接点部を被覆して伏皿状の
メッキ層を設けるとともに、球状の接点部を被覆して半
球状のメッキ層を設けてなることを特徴とする電気コネ
クタ。
1. A plurality of conductive metal wires each having a flat spherical contact portion at one end and a spherical contact portion at the other end are formed on both sides of the elastic insulating layer in the thickness direction of the elastic insulating layer. An electrical connector penetrated by exposing both contact portions from
An electrical connector comprising a flat spherical contact portion of a thin conductive metal wire and a protruding dish-shaped plating layer, and a semi-spherical plating layer covering a spherical contact portion.
【請求項2】 基板に複数の皿状凹部を設け、各皿状凹
部内にメッキ層を設ける工程、複数の導電性金属細線の
一方の端部に扁平球状の接点部を設けた後、各導電性金
属細線を扁平球状の接点部において前記各メッキ層に植
設する工程、各導電性金属細線の他方の端部に球状の接
点部を形成する工程、前記基板及びメッキ層の表面から
弾性絶縁層を硬化形成する工程、各導電性金属細線の球
状の接点部が弾性絶縁層から露出させる工程、弾性絶縁
層から露出する各球状の接点部に半球状のメッキ層を形
成する工程からなることを特徴とする電気コネクタの製
造方法。
A step of providing a plurality of dish-shaped recesses on the substrate and providing a plating layer in each of the dish-shaped recesses; providing a flat spherical contact portion at one end of the plurality of conductive metal wires; Implanting a conductive thin metal wire on each of the plating layers at the flat spherical contact portion; forming a spherical contact portion on the other end of each conductive metal thin wire; elastically deforming the surface of the substrate and the plating layer; A step of curing and forming an insulating layer, a step of exposing spherical contact portions of each conductive metal wire from the elastic insulating layer, and a step of forming a hemispherical plating layer on each spherical contact portion exposed from the elastic insulating layer. A method for manufacturing an electrical connector, comprising:
JP11104000A 1999-04-12 1999-04-12 Electric connector and manufacture thereof Pending JP2000294311A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11104000A JP2000294311A (en) 1999-04-12 1999-04-12 Electric connector and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11104000A JP2000294311A (en) 1999-04-12 1999-04-12 Electric connector and manufacture thereof

Publications (1)

Publication Number Publication Date
JP2000294311A true JP2000294311A (en) 2000-10-20

Family

ID=14369028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11104000A Pending JP2000294311A (en) 1999-04-12 1999-04-12 Electric connector and manufacture thereof

Country Status (1)

Country Link
JP (1) JP2000294311A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10110005A1 (en) * 2001-03-01 2002-09-19 Infineon Technologies Ag Electronic component used as semiconductor comprises semiconductor chip having active front side with bond pads and covered with elastic layer provided with contacts electrically conductively connected to bond pads
US9470718B2 (en) 2013-07-19 2016-10-18 Shinko Electric Industries Co., Ltd. Probe card
US9476913B2 (en) 2013-07-19 2016-10-25 Shinko Electric Industries Co., Ltd. Probe card
JP2016192303A (en) * 2015-03-31 2016-11-10 株式会社エンプラス Electric contact and socket for electrical component
CN110943314A (en) * 2015-03-31 2020-03-31 恩普乐股份有限公司 Electrical contact and socket for electronic component

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5741268U (en) * 1980-08-21 1982-03-05
JPH0935789A (en) * 1995-07-21 1997-02-07 Shin Etsu Polymer Co Ltd Anisotropic conductive sheet and its manufacture
JPH09304472A (en) * 1996-05-10 1997-11-28 Hitachi Ltd Connection device
JPH1019931A (en) * 1996-06-28 1998-01-23 Shin Etsu Polymer Co Ltd Probe for testing
WO1998011446A1 (en) * 1996-09-13 1998-03-19 International Business Machines Corporation Integrated compliant probe for wafer level test and burn-in

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5741268U (en) * 1980-08-21 1982-03-05
JPH0935789A (en) * 1995-07-21 1997-02-07 Shin Etsu Polymer Co Ltd Anisotropic conductive sheet and its manufacture
JPH09304472A (en) * 1996-05-10 1997-11-28 Hitachi Ltd Connection device
JPH1019931A (en) * 1996-06-28 1998-01-23 Shin Etsu Polymer Co Ltd Probe for testing
WO1998011446A1 (en) * 1996-09-13 1998-03-19 International Business Machines Corporation Integrated compliant probe for wafer level test and burn-in
JP2000502812A (en) * 1996-09-13 2000-03-07 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン Integrated compliant probe for wafer-level test and burn-in

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10110005A1 (en) * 2001-03-01 2002-09-19 Infineon Technologies Ag Electronic component used as semiconductor comprises semiconductor chip having active front side with bond pads and covered with elastic layer provided with contacts electrically conductively connected to bond pads
DE10110005B4 (en) * 2001-03-01 2007-11-29 Infineon Technologies Ag Electronic component with a semiconductor chip and method for its production
US9470718B2 (en) 2013-07-19 2016-10-18 Shinko Electric Industries Co., Ltd. Probe card
US9476913B2 (en) 2013-07-19 2016-10-25 Shinko Electric Industries Co., Ltd. Probe card
JP2016192303A (en) * 2015-03-31 2016-11-10 株式会社エンプラス Electric contact and socket for electrical component
CN110943314A (en) * 2015-03-31 2020-03-31 恩普乐股份有限公司 Electrical contact and socket for electronic component

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