JP2000298345A5 - - Google Patents
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- JP2000298345A5 JP2000298345A5 JP1999106856A JP10685699A JP2000298345A5 JP 2000298345 A5 JP2000298345 A5 JP 2000298345A5 JP 1999106856 A JP1999106856 A JP 1999106856A JP 10685699 A JP10685699 A JP 10685699A JP 2000298345 A5 JP2000298345 A5 JP 2000298345A5
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- JP
- Japan
- Prior art keywords
- electron beam
- pattern
- exposure
- minutes
- heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000010894 electron beam technology Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 3
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- SJMYWORNLPSJQO-UHFFFAOYSA-N tert-butyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)(C)C SJMYWORNLPSJQO-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 1
Description
本発明のポジ型感放射線性組成物は被加工基板上に塗布、乾燥され、通例、０．２μｍ〜２μｍの膜厚の薄膜にして使用される。この薄膜に、紫外線、遠紫外線、電子線、Ｘ線等の放射線を用いてパターン露光し、現像を行うことによって微細パターンを得ることができる。特に電子線、Ｘ線を用いたパターン露光の場合に効果が大きく、さらに電子線を用いた場合がより効果が顕著となる。 The positive radiation-sensitive composition of the present invention is applied on a substrate to be processed and dried, and is usually used as a thin film having a thickness of 0.2 μm to 2 μm. This thin film, ultraviolet, far ultraviolet, electron beam, to pattern exposure using radiation such as X-rays, it is possible to obtain a fine pattern by performing development. In particular, the effect is large in the case of pattern exposure using an electron beam or X-ray, and the effect is more remarkable in the case of using an electron beam.
比較例２
ｔ−ブチルメタクリレートをテトラヒドロフラン中でアゾビスイソブチロニトリルを触媒として重合し、単独重合体を得た。得られた重合体３ｇ、トリフェニルスルホニウムトリフレート１５０ｍｇをプロピレングリコールモノメチルエーテルアセテートに溶解し、０．１μｍのフィルターで濾過し、レジスト組成物を得た。得られたレジスト組成物をシリコンウエハ上にスピンコートした後、９０℃で２分間加熱し、膜厚０．５μｍのレジスト膜を得た。このレジスト膜に電子線露光装置を用いて、加速電圧２０ｋＶでパターン状に電子線を照射し、９０℃、３分加熱した後、テトラメチルアンモニウムヒドロキシド水溶液で現像を行った。９．５μＣ／ｃｍ２の露光量で、０．５μｍのパターンが得られたに過ぎなかった。
Comparative Example 2
t-Butyl methacrylate was polymerized in tetrahydrofuran using azobisisobutyronitrile as a catalyst to obtain a homopolymer. 3 g of the obtained polymer and 150 mg of triphenylsulfonium triflate were dissolved in propylene glycol monomethyl ether acetate, and filtered with a 0.1 μm filter to obtain a resist composition. After spin-coating the obtained resist composition on a silicon wafer, it was heated at 90 ° C. for 2 minutes to obtain a resist film having a thickness of 0.5 μm. The resist film was irradiated with an electron beam in a pattern at an acceleration voltage of 20 kV using an electron beam exposure apparatus, heated at 90 ° C. for 3 minutes, and then developed with an aqueous solution of tetramethylammonium hydroxide. At an exposure of 9.5 μC / cm 2 , a pattern of only 0.5 μm was obtained .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10685699A JP2000298345A (en) | 1999-04-14 | 1999-04-14 | Positive radiation-sensitive composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10685699A JP2000298345A (en) | 1999-04-14 | 1999-04-14 | Positive radiation-sensitive composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000298345A JP2000298345A (en) | 2000-10-24 |
| JP2000298345A5 true JP2000298345A5 (en) | 2006-05-25 |
Family
ID=14444243
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10685699A Pending JP2000298345A (en) | 1999-04-14 | 1999-04-14 | Positive radiation-sensitive composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000298345A (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4923376B2 (en) * | 2000-04-04 | 2012-04-25 | ダイキン工業株式会社 | Novel fluoropolymer having acid-reactive group and chemically amplified photoresist composition using the same |
| KR20020038283A (en) * | 2000-11-17 | 2002-05-23 | 박종섭 | Photoresist monomer, polymer thereof and photoresist composition containing the same |
| CA2560388A1 (en) | 2004-03-26 | 2005-10-06 | Daikin Industries, Ltd. | Fluorine-containing monomer, fluorine-containing polymer and surface treating agent |
| WO2005092997A1 (en) | 2004-03-26 | 2005-10-06 | Daikin Industries, Ltd. | Surface treating agent, fluorine-containing monomer and fluorine-containing polymer |
| JP2005345897A (en) * | 2004-06-04 | 2005-12-15 | Asahi Glass Co Ltd | Water repellent composition, water repellent thin film, and thin film having water repellent hydrophilic pattern |
| US20100203450A1 (en) * | 2009-02-11 | 2010-08-12 | International Business Machines Corporation | Photoresist compositions and methods of use |
| JP6707875B2 (en) * | 2016-01-29 | 2020-06-10 | 日本ゼオン株式会社 | Polymer and positive resist composition |
| KR102754360B1 (en) * | 2016-01-29 | 2025-01-13 | 니폰 제온 가부시키가이샤 | Polymer, positive resist composition, and method for forming resist pattern |
| JP7172495B2 (en) * | 2018-11-22 | 2022-11-16 | 日本ゼオン株式会社 | Polymer and positive resist composition |
| JP7238454B2 (en) * | 2019-02-19 | 2023-03-14 | 日本ゼオン株式会社 | Resist pattern forming method |
| US11262654B2 (en) * | 2019-12-27 | 2022-03-01 | Intel Corporation | Chain scission resist compositions for EUV lithography applications |
| WO2023047992A1 (en) | 2021-09-21 | 2023-03-30 | 富士フイルム株式会社 | Active light-sensitive or radiation-sensitive resin composition, active light-sensitive or radiation-sensitive film, pattern forming method, and method for producing electronic device |
| WO2024122346A1 (en) * | 2022-12-07 | 2024-06-13 | 富士フイルム株式会社 | Active ray-sensitive or radiation-sensitive resin composition, resist film, pattern formation method, and electronic device manufacturing method |
| WO2025203875A1 (en) * | 2024-03-28 | 2025-10-02 | 日本ゼオン株式会社 | Positive resist composition and method for formating resist pattern |
| WO2025203874A1 (en) * | 2024-03-28 | 2025-10-02 | 日本ゼオン株式会社 | Positive resist composition, method for forming resist pattern, and polymer |
-
1999
- 1999-04-14 JP JP10685699A patent/JP2000298345A/en active Pending
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