JP2000304806A - Test socket for semiconductor equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide good and stable electrical contact between a contact and an external connection terminal stably and continuously, and to be shipped with dust attached to the surface of the external connection terminal. Provided is a test socket for a semiconductor device capable of preventing the occurrence of a test. A first contact (8) that contacts an external connection terminal (6a) of a semiconductor device (6) and slides on a contact surface, and a first contact (8) on a contact surface of the external connection terminal (6a) where the first contact (8) contacts. And a second contact 9 that contacts later than the contact 8.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a test socket for testing electrical characteristics of a semiconductor device, and more particularly to a contact structure for making electrical contact with an external connection terminal of a semiconductor device. It is.

[0002]

2. Description of the Related Art A conventional socket for testing a semiconductor device of this type has a contact formed by punching a member having spring properties into a predetermined shape by press working and bending it, for example, as shown in FIG. 1 and a housing 2 made of an insulating member and holding and fixing the contact 1. To perform a test, an external connection terminal 4 a derived from a semiconductor device 4 supported by the pedestal 3 is connected to the contact 1. The tip is brought into contact with the external connection terminal 4a, and the jig 5
It is made so as to be pressed with.

The external connection terminal 4 of the semiconductor device 4
In many cases, dust adheres to the surface of a. In this case, the dust hinders the electrical contact between the contact 1 and the external connection terminal 4a, and good electrical contact can be stably obtained. Did not. Further, even when no dust is present, an oxide film exists on the surface of the external connection terminal 4a and its electric resistance is high. For this reason, by sufficiently sliding the contact 1 with respect to the external connection terminal 4a, the oxide film is destroyed and the contact area is increased, so that good electrical contact is obtained.

Further, in Japanese Patent Application Laid-Open No. 58-199545, by forming a plurality of sharp projections at the tip of a contact, even if dust adheres to the contact, it is possible to prevent the dust from adhering, to destroy the oxide film, and to reduce the contact area. It is disclosed that a good electrical contact between the connector and the external connection terminal can be achieved.

[0005]

In a conventional semiconductor device test socket, if dust adheres, it is avoided, and if an oxide film is present on the surface, it is destroyed to reduce the contact area. By expanding and testing,
Good electrical contact is obtained and the product is determined to be non-defective, and may be shipped with dust attached to the surface of the external connection terminal. On the other hand, the customer, that is, the company that purchased the semiconductor device, sometimes writes data to the product. At this time, dust attached to the product prevents good electrical contact, and data writing is not performed properly. However, there is a problem that a case cannot be performed.

[0006] Further, if the friction caused by sliding between the contact and the external connection terminal is repeated in the test, the members mainly constituting the external connection terminal and the deposits composed of oxides thereof are deposited on the surface of the contact. And these deposits prevent good electrical contact. As a result, good electrical contact can be obtained when the contact surface is clean.However, good electrical contact cannot be obtained during repeated tests. However, there has been a problem that good electrical contact cannot be continuously obtained.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is possible to stably and continuously make good electrical contact between a contact and an external connection terminal. It is an object of the present invention to provide a test socket for a semiconductor device which can prevent shipment with dust attached.

[0008]

According to a first aspect of the present invention, there is provided a test socket for a semiconductor device, wherein the first contact contacts an external connection terminal of the semiconductor device and slides on a contact surface; A second contact contacting the contact surface of the terminal contacting the first contact with a delay after the first contact.

According to a second aspect of the present invention, in the semiconductor device test socket according to the first aspect, a portion of the second contact that contacts the external connection terminal is formed in a spherical shape.

According to a third aspect of the present invention, there is provided a test socket for a semiconductor device according to the second aspect, wherein a large number of convex portions having a cavity at the base are formed on the surface of the spherical portion.

According to a fourth aspect of the present invention, in the semiconductor device test socket according to the third aspect, the radius of curvature of the tip of the convex portion is substantially the same as the thickness of the member forming the outermost layer of the external connection terminal. It is formed by.

According to a fifth aspect of the present invention, in the test socket for a semiconductor device according to the first aspect, when the first contact slides on the contact surface of the external connection terminal, a part of the first contact contacts the first contact. The second contact is configured to be in contact with a portion that contacts the external connection terminal.

According to a sixth aspect of the present invention, in the semiconductor device test socket according to the fifth aspect, a large number of irregularities are formed in a portion of the first contact that contacts the second contact.

According to a seventh aspect of the present invention, there is provided a test socket for a semiconductor device according to any one of the first to sixth aspects, wherein a conductive hard coating is formed on a portion of each of the contacts in contact with the external connection terminal. It was done.

[0015]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 Hereinafter, embodiments of the present invention will be described with reference to the drawings. 1 is a front view showing a configuration of a contact portion of a test socket of a semiconductor device according to a first embodiment of the present invention, FIG. 2 is a front view showing an operation of the contact portion in FIG. 1, and FIG. 3 is a second view in FIG. FIG. 4 is a perspective view showing the shape of the tip of the contact of FIG. 3, FIG. 4 is a schematic view showing a state in which deposits are deposited on the tip of the second contact in FIG. 3 in comparison with a state of a conventional contact, and FIG. 3 is an enlarged cross-sectional view showing an example of the shape of the tip of the second contact in FIG. 3, and FIG. 6 is a cross-sectional view schematically showing a state in which deposits are deposited on the tip of the second contact in FIG. .

In FIG. 1, reference numeral 6 denotes a semiconductor device such as an IC supported on a pedestal (not shown).
An external connection terminal 6a made of a 42 μm alloy material and having a 10 μm-thick solder plating film formed on the surface is led out from the surroundings. Reference numeral 7 denotes a contact formed by stamping plate-shaped beryllium into a predetermined shape by press working. A tip 8b contacts an external connection terminal 6a of the semiconductor device 6 via a bent portion 8a, and a contact surface is formed. A slidably formed first contact 8 is integrally connected to the first contact 8, and the tip 9 a is provided on the contact surface with which the tip 8 b of the first contact 8 contacts. The second contact 9 is formed so as to be able to contact the contact 8 later than the tip 8b of the contact 8, and the second contact 9 is held and fixed by a housing (not shown) made of an insulating member.

The tip portion 9a of the second contact 9 which contacts the external connection terminal 6a is formed in a spherical shape, and the spherical portion is formed into a rough surface with a surface roughness of about 10 μm Ry by electric discharge machining and has a thickness of 2 μm on its surface. By performing Ni plating of about 3 μm and growing the plating preferentially on the projections on the rough surface, a large number of convex portions 10 each having a cavity 10 a at the root portion are formed as shown in FIG. Au plating having a thickness of 0.2 μm to 0.3 μm is performed thereon.

When testing the semiconductor device 6 with the test socket according to the first embodiment of the present invention in which the contact 7 is configured as described above, first, the semiconductor device 6 is set at a position corresponding to the test socket. Then, when the holding jig (not shown) is lowered to press the external connection terminal 6a of the semiconductor device 6 downward, the external connection terminal 6a is brought into contact with the first contact 8 of the contact 7 as shown in FIG.
The contact 8b of the first contact 8 is bent to contact the tip 8b of the first contact 8 and press the tip 8b downward.
b moves outward by sliding on the contact surface with the external connection terminal 6a.

This operation causes the external connection terminal 6a
Foreign matter such as dust present on the surface of the substrate is removed. Then
When the holding jig is further lowered, as shown in FIG. 2B, the contact surface of the external connection terminal 6a where the foreign matter such as dust has been removed and cleaned is formed following the tip 8b of the first contact 8. Contact with the tip 9a of the second contact 9 provides good electrical contact between the external connection terminal 6a of the semiconductor device 6 and the second contact 9 of the contact 7. The first
Foreign matter such as dust removed from the surface of the external connection terminal 6a by the sliding of the tip 8b of the contact 8
Of the contact 9 of the contact 9
Is formed in a spherical shape so that foreign matter does not fall off by its own weight and rest on the surface to prevent electrical contact. The cavity 10a
The shape is not limited to the shape formed so as to bite into the root portion of the convex portion 10 as shown in FIG. 6, that is, the shape formed between each convex portion 10 and capable of accumulating the deposit 11 therein. Needless to say, it is good.

When the projection 10 formed on the surface of the tip 9a of the second contact 9 comes into contact with the surface of the external connection terminal 6a, the projection 10 is formed on the solder plating film formed on the surface as shown in FIG. Weld and destroy the oxide film present on the surface of the solder plating film and increase the contact area with the solder plating film. Since a large number of convex portions 10 are formed on the surface of the tip portion 9a, one of the convex portions 10 is formed.
Can cause the destruction of the oxide film and the enlargement of the contact area, so that good contact can be obtained without sufficiently sliding between the external connection terminal 6a and the second contact 9, and Is suppressed and good electrical contact can be obtained over a long period of time.

Further, as shown in FIG. 6, when the protrusion 10 enters into the solder plating film, a part of the solder and the oxide film that has been cut into the cavity 10 existing at the root of the protrusion 10.
The gas is discharged into a. Fig. 4
In the following description, the tip 9a of the second contact 9 will be described.
If the protrusions 10 are not formed on the front end 9a, as shown in FIG. 4B, the deposits 11 are deposited on the entire surface of the tip 9a in contact with the external connection terminal 6a. Then, as the test is repeated, the area and the thickness of the region where the deposit 11 is deposited increase, and good electrical contact cannot be obtained.

On the other hand, when the convex portion 10 having the cavity 10a at the root is formed at the tip 9a of the second contact 9, the adhered substance 11 is formed as shown in FIG.
Is sparsely deposited on the surface of the tip 9a. This is because the deposits 11 accumulate in the cavities 10a, but there are many cavities 10a. Even if there are some protrusions 10 on which the deposits 11 are deposited in the cavities 10a, the Since there is always another protrusion 10 on which no 11 is deposited, a good electric connection between the second contact 9 and the external connection terminal 6a via any one of the surfaces of the front end portion 9a of the second contact 9. Contact can be obtained.

Next, the protrusion 10 formed on the surface of the tip 9a of the second contact 9 as described above will be described in more detail. First, the radius of curvature R of the top of the projection 10
Is the thickness of the member constituting the outermost layer of the external connection terminal 6a, from the condition that the contact area can be obtained most efficiently;
That is, in the first embodiment, it is desirable that the thickness is approximately the same as the thickness of the solder plating film. Further, if the depth D of the cavity 10a formed at the root of the convex portion 10 is too shallow, The external connection terminal 6a
Since it is considered appropriate to set the value to be equal to or more than the thickness of the member constituting the outermost layer of the outermost layer, the radius of curvature R at the top of the convex portion 10 is substantially 10 μm, and the depth D of the cavity 10a is actually 20 μm. Have been. In addition, it is preferable that the protrusions 10 and the cavities 10a are formed with smooth curved surfaces, since the adhered matter 11 is less likely to be deposited.

The method of forming the projections 10 and the cavities 10a is as follows. In a contact punched by press working, the tip 9a of the second contact 9 is formed by electric discharge machining, sand blasting, liquid honing, etching, or the like. In addition, a method in which the processing surface is processed to a certain degree of rough surface and a process in which these are processed to a certain degree of rough surface by a combined processing, plating is applied to the surface, and the plating is preferentially grown on protrusions existing in the rough surface, Alternatively, for example, Co-P plating is performed on a relatively smooth surface formed by press working, and a diameter of 20 μm is applied.
A method such as fixing and fixing a granular member of about m is conceivable,
Further, a method is also conceivable in which minute irregularities are formed by coining in a partial region of a bulk-shaped member and then sliced one by one to form stable minute irregularities.

Further, the external connection terminal 6 of the semiconductor device 6
The thickness of the solder plating film formed on the surface of a is 10 μm.
m, a spherical member 12 having a similar value, that is, a radius of curvature R of 10 μm is prepared according to the gist of the present invention, and first, as shown in FIG. A relatively smooth surface is obtained as shown by a chain line, and then roughened as shown by a thick solid line in the figure by a method such as sand blasting or local electric discharge machining. It may be fixed by a method such as electroplating or electroless plating. In this case, the spherical member 12 can be fixed by the anchor effect.
More securely.

In order to verify the performance of the contact 7 of the test socket of the semiconductor device configured as described above according to the first embodiment of the present invention, the contact 7 (contact A) and the conventional contact 1 (FIG. 9) shown in FIG. A test was performed by comparing a contact C) and a contact (not shown) in which the tip of the contact C was sharpened (contact B).
Table 1 below shows the defect rates of these three types of contacts A, B, and C. First, a lot is divided into three parts, and about 3000 semiconductor devices 6 (I
As a result of the test C), the defect rates of the contacts A and B were almost the same, but the defect rate of the contact C was significantly higher. This is because the test is performed in a state where dust is trapped between the contact C and the external connection terminal 6a, so that good electrical contact cannot be obtained, and the contact C is determined to be a defective product although it is a good product. This is presumed to be the cause.

[0027]

[Table 1]

Next, an experiment for simulating data writing was performed. A conventional contact (contact C) is usually used for data writing. Therefore, an IC that was previously tested using the contacts A and B and was determined to be non-defective was again tested using the contact C. According to this, the amount of dust adhering to the external connection terminal 6a of the IC determined to be non-defective can be indirectly evaluated. As shown in Table 2 below, when an IC determined to be non-defective by contact B was re-tested by contact C, the defective rate was significantly increased. When the IC determined to have been tested again with the contact C, the failure rate increases only slightly. This is because the contact A removes dust attached to the external connection terminal 6a by the first contact 8, whereas the contact B only avoids dust attached to the external connection terminal 6a. Dust remains on the external connection terminal 6a after the test, and the dust was still tested with the contact C. Therefore, the test was performed in a state where dust was trapped, and good electrical contact was not obtained. is there.

[0029]

[Table 2]

In order to confirm this estimation, about 10 out of the ICs determined to be non-defective in the tests shown in Table 1 above.
%, That is, 30 pieces are randomly extracted, and the result of counting the total number of dusts attached to the external connection terminals 6a is shown in Table 3 below. The number of dusts adhering to the external connection terminals 6a of the ICs which were tested with the contact A and which were determined to be non-defective was small, while the IC which was tested with the contact B and was determined to be non-defective.
It was found that the number of dusts adhering to the external connection terminal 6a was large.

[0031]

[Table 3]

As described above, according to the first embodiment, the tip portion 8b contacts the external connection terminal 6a of the semiconductor device 6,
The first contact 8 slides on the contact surface, and the first contact 8 has a first end 8a on the contact surface on which the front end 8b of the first contact 8 of the external connection terminal 6a slides. A contact 7 is constituted by a second contact that comes in contact with a delay, and an external connection terminal 6 is constituted by the first contact 8.
After removing dust adhering to a, the second contact 9 is made to contact the external connection terminal 6a.
Good electrical contact between the contact 7 and the external connection terminal 6a of the semiconductor device 6 can be made stably and continuously.
It is possible to prevent the product from being shipped with dust attached to the surface of the external connection terminal 6a and to avoid a situation in which data cannot be properly written at the customer. Becomes

The external connection terminal 6 of the second contact 9
Since the distal end portion 9a contacting with the first contact 8a is formed in a spherical shape, foreign matter such as dust removed from the surface of the external connection terminal 6a due to sliding of the distal end portion 8b of the first contact 8 is scattered and the distal end portion 9a is scattered. Because it does not stay on the surface even when it reaches 9a,
Good electrical contact is obtained, and a large number of projections 10 having a cavity 10a at the root are formed on the surface of the tip 9a of the second contact 9, so that the tip 9a is connected to the external connection terminal. When it comes into contact with the surface of 6a, the projection 10 penetrates into the solder plating film formed on the surface, destroys the oxide film and enlarges the contact area, so that better electrical contact can be obtained.

Further, since a large number of the projections 10 are formed, even if the alignment between the second contact 9 and the external connection terminal 6a is insufficient, any one of the projections 10 may form an oxide film. Since the destruction and the enlargement of the contact area can be achieved, good contact can be made without sufficiently sliding the second contact 9, so that generation of adhesions is suppressed and good electrical contact can be obtained for a long period of time. Furthermore, the projection 10
Is set to the same value as the thickness of the solder plating film formed on the surface of the external connection terminal 6a, so that the contact area with the surface of the external connection terminal 6a can be obtained most efficiently. Will be possible.

Embodiment 2 FIG. 7 is a front view showing a configuration of a contact portion of a test socket of a semiconductor device according to a second embodiment of the present invention, and FIG. 8 is a front view showing an operation of the contact portion in FIG. In the figure, the same parts as those in the first embodiment are denoted by the same reference numerals, and description thereof will be omitted. Reference numeral 13 denotes a contact formed by punching a plate-shaped beryllium into a predetermined shape by press working. A tip portion 14b having a large number of irregularities formed on a surface thereof via a bent portion 14a is connected to an external connection terminal 6a of the semiconductor device 6. And a first contact 14 which is slidable on the contact surface and which comes into contact with a tip of a second contact to be described later during sliding, and is integrally connected to the first contact 14. And the tip 15 a is the tip 14 of the first contact 14.
a second contact 15 formed on the contact surface with which the second contact 15b comes into contact with the contact 14 with a delay from the tip 14b of the first contact 14, and the second contact 15 is an insulating member (FIG. (Not shown).

In the contact 13 configured as described above, a conductive film having a thickness of about 1 μm was formed on the surfaces of the first and second contacts 14 and 15. In particular, the area shown by the broken line in the figure, that is, the external connection terminal 6a of the semiconductor device 6 and the tip 15 of the second contact 15
When formed on the tip end portion 14b of the first contact 14 that comes into contact with a, the deposits are less likely to be deposited, which is effective. In addition,
As the material of the hard coating, any material having a low chemical affinity with the member constituting the external connection terminal 6a may be used, and a carbon-based or ceramic-based material is preferable. In the present embodiment, DLC (Diamond-Like-Carbon) is used.
Was applied. However, since DLC is essentially non-conductive, conductivity was imparted by forming a film at a relatively high temperature to cause graphite components to flow out. As another method for imparting conductivity, doping the DLC film with a metal is also known. Also, the gap between the first contact 14 and the second contact 15 is often very narrow,
With the hard coating formed by the gas phase synthesis method as described above, the gap between the contacts 14 and 15 is not short-circuited.

When testing the semiconductor device 6 with the test socket according to the second embodiment of the present invention in which the contacts 13 are configured as described above, first, the semiconductor device 6 is tested in the same manner as in the first embodiment. When the external connection terminal 6a of the semiconductor device 6 is pressed downward by lowering a holding jig (not shown), the external connection terminal 6a as shown in FIG.
Is the tip 14 of the first contact 14 of the contact 13
b, and presses the tip portion 14b downward.
The bent portion 14a of the contact 14 is bent and the tip portion 14b is bent.
Slides on the contact surface with the external connection terminal 6a, moves outward, and slides by contacting the tip 15a of the second contact 15.

Then, by this operation, the external connection terminal 6a
Foreign matter such as dust on the surface of
The deposits and the like adhering to the tip 15a of the second contact 15 are removed. Then, when the holding jig further descends, the contact surface of the external connection terminal 6a, which is free of foreign matter such as dust, is cleaned, and the contact surface of the external contact terminal 6a becomes the tip portion 14b of the first contact 14.
Then, the end portions 15a of the second contacts 15 from which the deposits and the like have been removed are cleaned, and the external connection terminals 6a of the semiconductor device 6 and the second contacts 1 of the contacts 13 are contacted.
5 and good electrical contact is obtained.

As described above, according to the second embodiment, the tip 14b of the first contact 14 is connected to the external connection terminal 6a.
When sliding on the contact surface of the second contact 15, the distal end portion 14b also comes into contact with the distal end portion 15a of the second contact 15, so that foreign matter such as dust on the surface of the external connection terminal 6a can of course be removed. That is, it is also possible to remove the adhered matter and the like adhering to the surface of the tip portion 15a of the second contact 15, so that a better electrical contact between the external connection terminal 6a and the second contact 15 can be obtained. Further, since a large number of irregularities are formed on the surface of the distal end portion 14b of the first contact 14, it is possible to enhance the effect of removing foreign substances and adhered substances.

[0040]

As described above, according to the first aspect of the present invention, the first contact that contacts the external connection terminal of the semiconductor device and slides on the contact surface, and the first contact of the external connection terminal. Since the second contact is provided on the contact surface with which the contact comes into contact with a delay after the first contact, good electrical contact between the contact and the external connection terminal of the semiconductor device can be performed stably and continuously. It is possible to provide a test socket for a semiconductor device which can prevent a situation such as an inability to properly write data at a customer site.

According to the second aspect of the present invention, in the first aspect, since the portion of the second contact which comes into contact with the external connection terminal is formed in a spherical shape, it is possible to prevent foreign matter from remaining on the contact surface of the contact. Thus, it is possible to provide a semiconductor device test socket capable of preventing such a problem and obtaining a better electrical contact.

According to a third aspect of the present invention, in the second aspect, since a large number of convex portions having a cavity at the base are formed on the spherical surface, the oxide film is broken by any one of the convex portions. As a result, it is possible to provide a test socket for a semiconductor device capable of obtaining a more reliable electrical contact by depositing an adhesive on a part of the cavity while increasing the contact area.

According to a fourth aspect of the present invention, in the third aspect, the radius of curvature of the tip of the convex portion is formed to have substantially the same value as the thickness of the member forming the outermost layer of the external connection terminal. A test socket for a semiconductor device capable of efficiently obtaining an area can be provided.

According to a fifth aspect of the present invention, in the first aspect, when the first contact slides on the contact surface of the external connection terminal, a part of the first contact is externally connected to the second contact. Since the semiconductor device is configured to be in contact with a portion that contacts the terminal, a foreign object on the surface of the external connection terminal and a deposit on the second contact surface are removed, and a semiconductor device test capable of obtaining a better electrical contact. Socket can be provided.

According to the sixth aspect of the present invention, in the fifth aspect, since a large number of irregularities are formed in a portion of the first contact which comes into contact with the second contact, the effect of removing foreign matters and adhered substances is improved. It is possible to provide a semiconductor device test socket that can be improved.

According to the seventh aspect of the present invention, in any one of the first to sixth aspects, a hard coating having conductivity is formed on a portion of each of the contacts in contact with the external connection terminal. It is possible to provide a test socket for a semiconductor device capable of suppressing deposition.

[Brief description of the drawings]

FIG. 1 is a front view showing a configuration of a contact portion of a test socket of a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a front view showing an operation of a contact unit in FIG.

FIG. 3 is a perspective view showing a shape of a tip end of a second contact in FIG. 1;

FIG. 4 is a schematic diagram showing a state in which a deposit accumulates at the tip of a second contact in FIG. 3 in comparison with a state in a conventional contact.

FIG. 5 is an enlarged sectional view showing an example of the shape of the tip of the second contact in FIG. 3;

FIG. 6 is a cross-sectional view schematically showing a state in which an adhered substance is deposited at the tip of the second contact in FIG.

FIG. 7 is a front view showing a configuration of a contact portion of a test socket of a semiconductor device according to a second embodiment of the present invention.

8 is a front view showing the operation of the contact section in FIG.

FIG. 9 is a front view showing a configuration of a contact portion of a test socket of a conventional semiconductor device.

[Explanation of symbols]

6 semiconductor equipment, 6a external connection terminal, 7, 13 contact, 8, 14 first contact, 8a, 14a
Bending part, 8b, 14b, 9a, 15a Tip part, 9, 1
5 second contact, 10 convex portion, 10a hollow portion,
11 adherents, 12 spherical members.

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Shigeru Takada 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Mitsui Electric Co., Ltd. Denki Kumamoto Semiconductor Co., Ltd.

Claims (7)

[Claims] A first contact that contacts an external connection terminal of the semiconductor device and slides on the contact surface; and a first contact on the contact surface of the external connection terminal with which the first contact contacts. A test socket for a semiconductor device, comprising: a second contact that comes in contact with the contact later than the contact. 2. The test socket for a semiconductor device according to claim 1, wherein a portion of the second contact that contacts the external connection terminal is formed in a spherical shape. 3. The test socket for a semiconductor device according to claim 2, wherein a large number of convex portions having a cavity at a root are formed on the surface of the spherical portion. 4. The test socket for a semiconductor device according to claim 3, wherein the radius of curvature of the tip of the convex portion is substantially the same as the thickness of the member forming the outermost layer of the external connection terminal. . 5. When the first contact slides on the contact surface of the external connection terminal, a part of the first contact comes into contact with a portion of the second contact that contacts the external connection terminal. The test socket for a semiconductor device according to claim 1, wherein: 6. The test socket for a semiconductor device according to claim 5, wherein a large number of irregularities are formed in a portion of the first contact that contacts the second contact. 7. The test socket for a semiconductor device according to claim 1, wherein a hard coating having conductivity is formed on a portion of each of the contacts that contacts the external connection terminal.