JP2000328268A - Etching treating agent for copper and copper alloy - Google Patents
Etching treating agent for copper and copper alloyInfo
- Publication number
- JP2000328268A JP2000328268A JP11132518A JP13251899A JP2000328268A JP 2000328268 A JP2000328268 A JP 2000328268A JP 11132518 A JP11132518 A JP 11132518A JP 13251899 A JP13251899 A JP 13251899A JP 2000328268 A JP2000328268 A JP 2000328268A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- compd
- acid
- compound
- complex
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 34
- 239000010949 copper Substances 0.000 title claims abstract description 34
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 239000003795 chemical substances by application Substances 0.000 title claims abstract description 15
- 229910000881 Cu alloy Inorganic materials 0.000 title claims abstract description 12
- 238000005530 etching Methods 0.000 title claims description 20
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims abstract description 33
- -1 halogen ions Chemical class 0.000 claims abstract description 21
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 14
- 150000001875 compounds Chemical class 0.000 claims description 29
- 239000007864 aqueous solution Substances 0.000 claims description 9
- 150000007524 organic acids Chemical class 0.000 claims description 5
- 239000000243 solution Substances 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 3
- 239000004094 surface-active agent Substances 0.000 claims description 3
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical compound [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 abstract description 9
- 229910001447 ferric ion Inorganic materials 0.000 abstract description 9
- 230000001590 oxidative effect Effects 0.000 abstract description 5
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 abstract description 4
- 238000005406 washing Methods 0.000 abstract description 4
- 239000007800 oxidant agent Substances 0.000 abstract description 3
- 150000004699 copper complex Chemical class 0.000 abstract description 2
- 238000005260 corrosion Methods 0.000 abstract description 2
- 230000007797 corrosion Effects 0.000 abstract description 2
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 abstract description 2
- 239000011780 sodium chloride Substances 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 description 16
- 239000000758 substrate Substances 0.000 description 10
- 239000012756 surface treatment agent Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000008139 complexing agent Substances 0.000 description 3
- 150000002506 iron compounds Chemical class 0.000 description 3
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 3
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 description 3
- LLPKQRMDOFYSGZ-UHFFFAOYSA-N 2,5-dimethyl-1h-imidazole Chemical compound CC1=CN=C(C)N1 LLPKQRMDOFYSGZ-UHFFFAOYSA-N 0.000 description 2
- XZXYQEHISUMZAT-UHFFFAOYSA-N 2-[(2-hydroxy-5-methylphenyl)methyl]-4-methylphenol Chemical compound CC1=CC=C(O)C(CC=2C(=CC=C(C)C=2)O)=C1 XZXYQEHISUMZAT-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- 239000004471 Glycine Substances 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical class OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 235000004279 alanine Nutrition 0.000 description 2
- 229940107816 ammonium iodide Drugs 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 2
- GHVNFZFCNZKVNT-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 2
- JQVDAXLFBXTEQA-UHFFFAOYSA-N dibutylamine Chemical compound CCCCNCCCC JQVDAXLFBXTEQA-UHFFFAOYSA-N 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- IFQUWYZCAGRUJN-UHFFFAOYSA-N ethylenediaminediacetic acid Chemical compound OC(=O)CNCCNCC(O)=O IFQUWYZCAGRUJN-UHFFFAOYSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 2
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- 235000002639 sodium chloride Nutrition 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- 230000003381 solubilizing effect Effects 0.000 description 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- YGDVXSDNEFDTGV-UHFFFAOYSA-N 2-[6-[bis(carboxymethyl)amino]hexyl-(carboxymethyl)amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)CCCCCCN(CC(O)=O)CC(O)=O YGDVXSDNEFDTGV-UHFFFAOYSA-N 0.000 description 1
- WYMDDFRYORANCC-UHFFFAOYSA-N 2-[[3-[bis(carboxymethyl)amino]-2-hydroxypropyl]-(carboxymethyl)amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)CN(CC(O)=O)CC(O)=O WYMDDFRYORANCC-UHFFFAOYSA-N 0.000 description 1
- PQAMFDRRWURCFQ-UHFFFAOYSA-N 2-ethyl-1h-imidazole Chemical compound CCC1=NC=CN1 PQAMFDRRWURCFQ-UHFFFAOYSA-N 0.000 description 1
- 125000006290 2-hydroxybenzyl group Chemical group [H]OC1=C(C([H])=C([H])C([H])=C1[H])C([H])([H])* 0.000 description 1
- PFKAKHILNWLJRT-UHFFFAOYSA-H 2-hydroxypropane-1,2,3-tricarboxylate;iron(2+) Chemical compound [Fe+2].[Fe+2].[Fe+2].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O PFKAKHILNWLJRT-UHFFFAOYSA-H 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- MKBBSFGKFMQPPC-UHFFFAOYSA-N 2-propyl-1h-imidazole Chemical compound CCCC1=NC=CN1 MKBBSFGKFMQPPC-UHFFFAOYSA-N 0.000 description 1
- IWTIBPIVCKUAHK-UHFFFAOYSA-N 3-[bis(2-carboxyethyl)amino]propanoic acid Chemical compound OC(=O)CCN(CCC(O)=O)CCC(O)=O IWTIBPIVCKUAHK-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- OTLNPYWUJOZPPA-UHFFFAOYSA-N 4-nitrobenzoic acid Chemical compound OC(=O)C1=CC=C([N+]([O-])=O)C=C1 OTLNPYWUJOZPPA-UHFFFAOYSA-N 0.000 description 1
- AWQSAIIDOMEEOD-UHFFFAOYSA-N 5,5-Dimethyl-4-(3-oxobutyl)dihydro-2(3H)-furanone Chemical compound CC(=O)CCC1CC(=O)OC1(C)C AWQSAIIDOMEEOD-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- UNMYWSMUMWPJLR-UHFFFAOYSA-L Calcium iodide Chemical compound [Ca+2].[I-].[I-] UNMYWSMUMWPJLR-UHFFFAOYSA-L 0.000 description 1
- 239000005632 Capric acid (CAS 334-48-5) Substances 0.000 description 1
- 239000005635 Caprylic acid (CAS 124-07-2) Substances 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- FCKYPQBAHLOOJQ-UHFFFAOYSA-N Cyclohexane-1,2-diaminetetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)C1CCCCC1N(CC(O)=O)CC(O)=O FCKYPQBAHLOOJQ-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- 108010010803 Gelatin Proteins 0.000 description 1
- 229910021576 Iron(III) bromide Inorganic materials 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 239000005639 Lauric acid Substances 0.000 description 1
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 1
- JYXGIOKAKDAARW-UHFFFAOYSA-N N-(2-hydroxyethyl)iminodiacetic acid Chemical compound OCCN(CC(O)=O)CC(O)=O JYXGIOKAKDAARW-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229920001213 Polysorbate 20 Polymers 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- MKBUQYWFFBCMFG-UHFFFAOYSA-N acetic acid propane-1,1-diamine Chemical compound CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.CCC(N)N MKBUQYWFFBCMFG-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 229960003767 alanine Drugs 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 235000001014 amino acid Nutrition 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- XGGLLRJQCZROSE-UHFFFAOYSA-K ammonium iron(iii) sulfate Chemical compound [NH4+].[Fe+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O XGGLLRJQCZROSE-UHFFFAOYSA-K 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- FRHBOQMZUOWXQL-UHFFFAOYSA-K azane;2-hydroxypropane-1,2,3-tricarboxylate;iron(3+) Chemical compound N.[Fe+3].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O FRHBOQMZUOWXQL-UHFFFAOYSA-K 0.000 description 1
- NKQIMNKPSDEDMO-UHFFFAOYSA-L barium bromide Chemical compound [Br-].[Br-].[Ba+2] NKQIMNKPSDEDMO-UHFFFAOYSA-L 0.000 description 1
- 229910001620 barium bromide Inorganic materials 0.000 description 1
- WDIHJSXYQDMJHN-UHFFFAOYSA-L barium chloride Chemical compound [Cl-].[Cl-].[Ba+2] WDIHJSXYQDMJHN-UHFFFAOYSA-L 0.000 description 1
- 229910001626 barium chloride Inorganic materials 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- KXHPPCXNWTUNSB-UHFFFAOYSA-M benzyl(trimethyl)azanium;chloride Chemical compound [Cl-].C[N+](C)(C)CC1=CC=CC=C1 KXHPPCXNWTUNSB-UHFFFAOYSA-M 0.000 description 1
- ODWXUNBKCRECNW-UHFFFAOYSA-M bromocopper(1+) Chemical compound Br[Cu+] ODWXUNBKCRECNW-UHFFFAOYSA-M 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- 235000011148 calcium chloride Nutrition 0.000 description 1
- 229940043430 calcium compound Drugs 0.000 description 1
- 229940046413 calcium iodide Drugs 0.000 description 1
- 229910001640 calcium iodide Inorganic materials 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- FOCAUTSVDIKZOP-UHFFFAOYSA-N chloroacetic acid Chemical compound OC(=O)CCl FOCAUTSVDIKZOP-UHFFFAOYSA-N 0.000 description 1
- 229940106681 chloroacetic acid Drugs 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- ZZGUZQXLSHSYMH-UHFFFAOYSA-N ethane-1,2-diamine;propanoic acid Chemical compound NCCN.CCC(O)=O.CCC(O)=O ZZGUZQXLSHSYMH-UHFFFAOYSA-N 0.000 description 1
- DEFVIWRASFVYLL-UHFFFAOYSA-N ethylene glycol bis(2-aminoethyl)tetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)CCOCCOCCN(CC(O)=O)CC(O)=O DEFVIWRASFVYLL-UHFFFAOYSA-N 0.000 description 1
- 239000011640 ferrous citrate Substances 0.000 description 1
- 235000019850 ferrous citrate Nutrition 0.000 description 1
- 229910001448 ferrous ion Inorganic materials 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 229960002449 glycine Drugs 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000004313 iron ammonium citrate Substances 0.000 description 1
- 235000000011 iron ammonium citrate Nutrition 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- 150000004698 iron complex Chemical class 0.000 description 1
- 229910000358 iron sulfate Inorganic materials 0.000 description 1
- BAUYGSIQEAFULO-UHFFFAOYSA-L iron(2+) sulfate (anhydrous) Chemical compound [Fe+2].[O-]S([O-])(=O)=O BAUYGSIQEAFULO-UHFFFAOYSA-L 0.000 description 1
- HEJPGFRXUXOTGM-UHFFFAOYSA-K iron(3+);triiodide Chemical compound [Fe+3].[I-].[I-].[I-] HEJPGFRXUXOTGM-UHFFFAOYSA-K 0.000 description 1
- LHOWRPZTCLUDOI-UHFFFAOYSA-K iron(3+);triperchlorate Chemical compound [Fe+3].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O LHOWRPZTCLUDOI-UHFFFAOYSA-K 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- GYCHYNMREWYSKH-UHFFFAOYSA-L iron(ii) bromide Chemical compound [Fe+2].[Br-].[Br-] GYCHYNMREWYSKH-UHFFFAOYSA-L 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 229960002446 octanoic acid Drugs 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 229960003330 pentetic acid Drugs 0.000 description 1
- OXNIZHLAWKMVMX-UHFFFAOYSA-N picric acid Chemical compound OC1=C([N+]([O-])=O)C=C([N+]([O-])=O)C=C1[N+]([O-])=O OXNIZHLAWKMVMX-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000000256 polyoxyethylene sorbitan monolaurate Substances 0.000 description 1
- 235000010486 polyoxyethylene sorbitan monolaurate Nutrition 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- 229960004839 potassium iodide Drugs 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- BTURAGWYSMTVOW-UHFFFAOYSA-M sodium dodecanoate Chemical compound [Na+].CCCCCCCCCCCC([O-])=O BTURAGWYSMTVOW-UHFFFAOYSA-M 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 235000009518 sodium iodide Nutrition 0.000 description 1
- 229940083599 sodium iodide Drugs 0.000 description 1
- 229940082004 sodium laurate Drugs 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- FEONEKOZSGPOFN-UHFFFAOYSA-K tribromoiron Chemical compound Br[Fe](Br)Br FEONEKOZSGPOFN-UHFFFAOYSA-K 0.000 description 1
- 229950002929 trinitrophenol Drugs 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、銅表面および銅合
金表面の除錆、表面粗化を行うエッチング処理剤に関す
るものであり、特に銅および銅合金と半田が共存するプ
リント基板における銅回路部の表面処理剤として好適で
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an etching agent for removing rust and roughening a copper surface and a copper alloy surface, and more particularly to a copper circuit portion in a printed circuit board in which copper, a copper alloy and solder coexist. It is suitable as a surface treatment agent.
【0002】[0002]
【従来の技術】プリント配線板の製造において、エッチ
ングレジスト、ソルダーレジスト等の密着性の向上、あ
るいは電子部品実装時の半田付け性向上などを目的とし
て、銅表面を化学的に研磨するマイクロエッチングと呼
ばれる処理が行われている。このマイクロエッチング処
理には、通常硫酸と過酸化水素を主成分とする水溶液、
あるいは過硫酸塩を主成分とする水溶液が使用されてい
る。硫酸と過酸化水素を用いる表面処理方法は、特公昭
53−32340号、特開平3−140481号、特開
平5−295365号公報に記載されており、過硫酸塩
を用いた表面処理方法は、特公昭61−435号公報に
記載されている。また近年、狭リードピッチのQFP等
の電子部品をプリント基板に実装するため、一部のラン
ドにあらかじめ半田を供給する方法が行われている。こ
のようにあらかじめ半田が供給されている基板は、一般
的に半田プリコート基板と呼ばれ、銅と半田が共存した
基板である。銅と半田が共存した基板のエッチング処理
剤は、特開平9−293954号公報に記載されてい
る。2. Description of the Related Art In the manufacture of printed wiring boards, micro-etching for chemically polishing a copper surface has been proposed for the purpose of improving the adhesion of an etching resist, a solder resist or the like, or improving the solderability when mounting electronic components. A called process is being performed. This micro-etching process usually involves an aqueous solution mainly composed of sulfuric acid and hydrogen peroxide,
Alternatively, an aqueous solution containing a persulfate as a main component is used. Surface treatment methods using sulfuric acid and hydrogen peroxide are described in JP-B-53-32340, JP-A-3-140481, and JP-A-5-295365. It is described in JP-B-61-435. In recent years, in order to mount an electronic component such as a QFP having a narrow lead pitch on a printed circuit board, a method of supplying solder to some lands in advance has been performed. Such a board to which solder has been supplied in advance is generally called a solder precoat board, and is a board in which copper and solder coexist. An etching agent for a substrate in which copper and solder coexist is described in JP-A-9-293954.
【0003】[0003]
【発明が解決しようとする課題】硫酸と過酸化水素、ま
たは過硫酸塩を主成分とするマイクロエッチング剤は、
銅をエッチングする速度が速いなどの利点があるもの
の、以下に示した欠点を有する。エッチング後の水洗が
不十分であり、マイクロエッチング液が基板に残存した
場合、回路が腐食し最悪の場合は回路が断線する。 銅と半田が共存する基板を処理した場合、半田表面が
変色する。 処理液が強酸性であるため、取り扱いには十分な注意
が必要である。The microetching agent containing sulfuric acid and hydrogen peroxide or persulfate as main components is
Although it has advantages such as a high etching rate of copper, it has the following disadvantages. If the washing after the etching is insufficient and the microetching solution remains on the substrate, the circuit is corroded, and in the worst case, the circuit is disconnected. When a substrate in which copper and solder coexist is processed, the surface of the solder is discolored. Since the treatment liquid is strongly acidic, sufficient care must be taken in handling.
【0004】回路の腐食を防ぐ表面処理剤が、特開平6
−287774号公報に記載されている。しかしなが
ら、銅をエッチングする速度が遅いため処理に時間を要
し、生産性に欠けるという問題がある。銅と半田が共存
する基板の表面処理剤が、特開平9−293954号公
報に記載されているが、これも銅をエッチングする速度
が遅いため、同様の問題があった。本発明は、処理後の
水洗が不十分な場合でも回路を腐食せず、断線等のトラ
ブルを回避し、さらに銅と半田が共存する基板を処理し
ても、半田が変色することなく銅表面のみをエッチング
し、且つ銅のエッチング速度を高め、且つ作業環境を改
善することができる表面処理剤を提供することを目的と
する。A surface treatment agent for preventing circuit corrosion is disclosed in
-287774. However, there is a problem that processing is time-consuming due to the low etching rate of copper, and the productivity is lacking. A surface treating agent for a substrate in which copper and solder coexist is described in Japanese Patent Application Laid-Open No. 9-293954. However, this also has a similar problem because the etching speed of copper is low. The present invention does not corrode the circuit even if the water washing after processing is insufficient, avoids troubles such as disconnection, and furthermore, even when processing a board in which copper and solder coexist, the solder surface does not discolor. An object of the present invention is to provide a surface treatment agent capable of etching only copper, increasing the etching rate of copper, and improving the working environment.
【0005】[0005]
【課題を解決するための手段】本発明者らは、前記の目
的を達成するために種々の試験を重ねた結果、コンプレ
クサン化合物の第二鉄錯体、ハロゲンイオン及びイミダ
ゾール化合物、あるいはコンプレクサン化合物の第二鉄
錯体とハロゲンイオンまたはイミダゾール化合物のいず
れかを必須成分として含む水溶液からなり、溶液のpH
を5〜8の範囲に調整したことを特徴とする銅および銅
合金のエッチング処理剤を使用することにより、所期の
目的を達成できることを見出し、本発明を完成した。The present inventors have conducted various tests to achieve the above object, and as a result, have found that a ferric complex of a complexan compound, a halogen ion and an imidazole compound, or a complexan compound. Consisting of an aqueous solution containing a ferric complex of the formula (I) and either a halogen ion or an imidazole compound as essential components,
It was found that the intended purpose can be achieved by using an etching agent for copper and a copper alloy characterized by adjusting the ratio to a range of 5 to 8, and completed the present invention.
【0006】[0006]
【発明の実施の形態】本発明に用いるコンプレクサン化
合物の第二鉄錯体は、金属銅などを酸化するための酸化
剤として作用するものである。本発明において、酸化作
用を有する種々の第二鉄錯体のなかでもコンプレクサン
化合物の第二鉄錯体を用いることにより、銅及び銅合金
に対する表面処理剤として良好なエッチング速度を発現
することができる。前記コンプレクサン化合物の第二鉄
錯体のうち、第二鉄イオンを供給するのに好適な鉄化合
物としては、塩化鉄(III)、臭化鉄(III)、沃
化鉄(III)、硫酸鉄(III)、硫酸アンモニウム
鉄(III)、硝酸鉄(III)、クエン酸鉄(II
I)、クエン酸鉄(III)アンモニウム、過塩素酸鉄
(III)、2−エチルヘキサン鉄(III)等が挙げ
られる。前記第二鉄イオンを供給する鉄化合物は2種類
以上を併用してもよい。第二鉄イオンを供給する鉄化合
物の含有量は、第二鉄イオンに換算して0.1〜20%
が好ましい。BEST MODE FOR CARRYING OUT THE INVENTION The ferric complex of a complexan compound used in the present invention acts as an oxidizing agent for oxidizing metallic copper and the like. In the present invention, by using a ferric complex of a complexan compound among various ferric complexes having an oxidizing action, a good etching rate can be exhibited as a surface treatment agent for copper and a copper alloy. Among the ferric complexes of the complexan compounds, iron compounds suitable for supplying ferric ions include iron (III) chloride, iron (III) bromide, iron (III) iodide, and iron sulfate (III), iron (III) ammonium sulfate, iron (III) nitrate, iron (II) citrate
I), ammonium iron (III) citrate, iron (III) perchlorate, iron (III) 2-ethylhexane and the like. Two or more iron compounds for supplying the ferric ion may be used in combination. The content of the iron compound that supplies ferric ion is 0.1 to 20% in terms of ferric ion.
Is preferred.
【0007】コンプレクサン化合物の第二鉄錯体のう
ち、コンプレクサン化合物はpH5〜8の水溶液中で第
二鉄イオンと錯体を形成することにより銅及び銅合金に
対する酸化剤として作用し、またコンプレクサン化合物
の第二鉄錯体により酸化された金属銅を溶解し、コンプ
レクサン化合物の銅錯体として安定に可溶化させるため
に用いられるものである。前記コンプレクサン化合物の
代表的なものとしては、イミノ二酢酸、ニトリロ三酢
酸、エチレンジアミン4酢酸、ジエチレントリアミン五
酢酸、トリエチレンテトラミン六酢酸、1,2−ジアミ
ノシクロヘキサン四酢酸、グリコールエーテルジアミン
四酢酸、N,N−ビス(2−ヒドロキシベンジル)エチ
レンジアミン二酢酸、エチレンジアミン二プロピオン
酸、エチレンジアミン二酢酸、ジアミノプロパノール四
酢酸、ヘキサメチレンジアミン四酢酸、ヒドロキシエチ
ルイミノ二酢酸、ジアミノプロパン四酢酸、ニトリロ三
プロピオン酸、エチレンジアミンテトラキスメチレンホ
スホン酸、ニトリロトリスメチレンホスホン酸等とこれ
らの塩類が挙げられる。前記コンプレクサン化合物は2
種類以上を併用してもよい。コンプレクサン化合物の含
有量は、第二鉄イオン(モル濃度)に対して1〜10倍
モルの割合が好ましい。[0007] Among the ferric complexes of the complexan compound, the complexan compound acts as an oxidizing agent for copper and copper alloys by forming a complex with ferric ion in an aqueous solution having a pH of 5 to 8; It is used for dissolving copper metal oxidized by a ferric complex of a compound and stably solubilizing it as a copper complex of a complexan compound. Representative examples of the complexan compound include iminodiacetic acid, nitrilotriacetic acid, ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, triethylenetetraminehexaacetic acid, 1,2-diaminocyclohexanetetraacetic acid, glycol ether diaminetetraacetic acid, N , N-bis (2-hydroxybenzyl) ethylenediaminediacetic acid, ethylenediaminedipropionic acid, ethylenediaminediacetic acid, diaminopropanoltetraacetic acid, hexamethylenediaminetetraacetic acid, hydroxyethyliminodiacetic acid, diaminopropanetetraacetic acid, nitrilotripropionic acid, Examples thereof include ethylenediaminetetrakismethylenephosphonic acid, nitrilotrismethylenephosphonic acid, and salts thereof. The complexan compound is 2
More than one type may be used in combination. The content of the complexan compound is preferably 1 to 10 moles per 1 mole of the ferric ion (molar concentration).
【0008】前記コンプレクサン化合物の第二鉄錯体
は、鉄錯体として添加してもよく、また第二鉄イオン源
とコンプレクサン化合物を個別に添加し、水溶液中でコ
ンプレクサン化合物の第二鉄錯体を生成させてもよい。The ferric complex of the complexan compound may be added as an iron complex, or the ferric ion source and the complexan compound may be added separately, and the ferric complex of the complexan compound may be added in an aqueous solution. May be generated.
【0009】本発明に用いられるイミダゾール化合物
は、コンプレクサン化合物の第二鉄錯体の銅及び銅合金
に対する酸化力を高め、また酸化された金属銅を溶解す
るために用いるものである。前記イミダゾール化合物の
代表的なものとしては、イミダゾール、2−メチルイミ
ダゾ−ル、2,4−ジメチルイミダゾール、2−エチル
イミダゾ−ル、2−エチル−4−メチルイミダゾ−ル、
2−プロピルイミダゾールなどが挙げられる。前記イミ
ダゾール化合物は2種類以上を併用してもよい。イミダ
ゾール化合物の含有量は0.01〜20%が好ましい。The imidazole compound used in the present invention is used to increase the oxidizing power of the ferric complex of the complexan compound to copper and copper alloy and to dissolve oxidized metallic copper. Representative examples of the imidazole compound include imidazole, 2-methylimidazole, 2,4-dimethylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole,
2-propylimidazole and the like. Two or more imidazole compounds may be used in combination. The content of the imidazole compound is preferably 0.01 to 20%.
【0010】本発明に用いられるハロゲンイオンは、コ
ンプレクサン化合物の第二鉄錯体の銅及び銅合金に対す
る酸化力を高め、また酸化された金属銅を溶解するため
に用いられるものである。前記ハロゲンイオンを供給す
るのに好適な化合物として、弗化ナトリウム、弗化カリ
ウム、塩化ナトリウム、塩化カルシウム、塩化カリウ
ム、塩化アンモニウム、塩化バリウム、塩化鉄、塩化
銅、塩化亜鉛、臭化カリウム、臭化アンモニウム、臭化
バリウム、臭化銅、臭化鉄、沃化ナトリウム、沃化カリ
ウム、沃化アンモニウム、沃化カルシウム、及び溶液中
でハロゲンイオンを解離しうる化合物が挙げられる。前
記ハロゲンイオンを供給する化合物は2種類以上を併用
してもよい。ハロゲンイオンを供給する化合物の含有量
は、ハロゲンイオンに換算して、0.001〜20%が
好ましい。The halogen ion used in the present invention is used for increasing the oxidizing power of the ferric complex of the complexan compound to copper and copper alloy and for dissolving oxidized metallic copper. Compounds suitable for supplying the halogen ions include sodium fluoride, potassium fluoride, sodium chloride, calcium chloride, potassium chloride, ammonium chloride, barium chloride, iron chloride, copper chloride, zinc chloride, potassium bromide, and odor. Examples include ammonium iodide, barium bromide, copper bromide, iron bromide, sodium iodide, potassium iodide, ammonium iodide, calcium iodide, and compounds capable of dissociating halogen ions in a solution. Two or more compounds that supply the halogen ions may be used in combination. The content of the compound that supplies a halogen ion is preferably 0.001 to 20% in terms of a halogen ion.
【0011】本発明に用いられる有機酸は、コンプレク
サン化合物の第二鉄錯体により酸化された金属銅を溶解
させるために用いるものである。前記有機酸の代表的な
ものとしては、蟻酸、酢酸、プロピオン酸、酪酸、吉草
酸、ヘプタン酸、カプリル酸、カプリン酸、ラウリン
酸、グリコール酸、乳酸、クロロ酢酸、アクリル酸、シ
ュウ酸、マロン酸、コハク酸、グルタル酸、アジピン
酸、マレイン酸、リンゴ酸、酒石酸、クエン酸、安息香
酸、パラニトロ安息香酸、フタル酸、サリチル酸、ピク
リン酸、グリシン、アラニン、没食子酸などが挙げられ
る。前記有機酸の含有量は、0.1〜30%が好まし
い。The organic acid used in the present invention is used for dissolving metallic copper oxidized by a ferric complex of a complexan compound. Representative organic acids include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, heptanoic acid, caprylic acid, capric acid, lauric acid, glycolic acid, lactic acid, chloroacetic acid, acrylic acid, oxalic acid, malonic acid Acids, succinic acid, glutaric acid, adipic acid, maleic acid, malic acid, tartaric acid, citric acid, benzoic acid, paranitrobenzoic acid, phthalic acid, salicylic acid, picric acid, glycine, alanine, gallic acid and the like. The content of the organic acid is preferably 0.1 to 30%.
【0012】本発明に用いられる錯化剤は、エッチング
により溶解した銅イオンを安定に可溶化させるためのも
のである。前記錯化剤としては、例えば、ブチルアミ
ン、ジブチルアミン、トリエチルアミンなどの脂肪族ア
ミン、モノエタノールアミン、ジエタノールアミン、ト
リエタノールアミンなどのアルカノールアミン、グリシ
ン、アラニンなどのアミノ酸などが挙げられる。錯化剤
の含有量は、1〜20%が好ましい。The complexing agent used in the present invention is for stably solubilizing copper ions dissolved by etching. Examples of the complexing agent include aliphatic amines such as butylamine, dibutylamine and triethylamine, alkanolamines such as monoethanolamine, diethanolamine and triethanolamine, and amino acids such as glycine and alanine. The content of the complexing agent is preferably 1 to 20%.
【0013】本発明に用いられる添加剤は、エッチング
による銅外観を良好にするために用いられる。前記添加
剤は、界面活性剤、高分子化合物等である。界面活性剤
としては、ポリオキシエチレンソルビタンモノラウレー
ト等のノニオン系界面活性剤、ラウリン酸ナトリウム等
のアニオン系界面活性剤、塩化トリメチルベンジルアン
モニウム等のカチオン系界面活性剤が挙げられる。高分
子化合物としては、ポリエチレングリコール、ポリビニ
ルアルコール、ポリビニルピロリドン、ゼラチン、可溶
性デンプン等が挙げられる。添加剤の含有量は、0.0
01〜10%が好ましい。The additives used in the present invention are used to improve the appearance of copper by etching. The additive is a surfactant, a polymer compound, or the like. Examples of the surfactant include a nonionic surfactant such as polyoxyethylene sorbitan monolaurate, an anionic surfactant such as sodium laurate, and a cationic surfactant such as trimethylbenzylammonium chloride. Examples of the polymer compound include polyethylene glycol, polyvinyl alcohol, polyvinylpyrrolidone, gelatin, and soluble starch. The content of the additive is 0.0
01 to 10% is preferred.
【0014】以上の成分からなる本発明の表面処理剤
は、水酸化ナトリウム、アンモニア、前記有機酸等の添
加により、pH5〜8(20℃)の水溶液に調整して使
用すべきである。The surface treating agent of the present invention comprising the above components should be used after adjusting to an aqueous solution having a pH of 5 to 8 (20 ° C.) by adding sodium hydroxide, ammonia, the above-mentioned organic acid and the like.
【0015】本発明の表面処理剤の使用方法としては、
被処理基板をスプレーで吹き付ける方法および、被処理
基板を表面処理剤中に浸漬する方法が好適である。浸漬
する場合は、エッチングにより液中に生成した第一鉄イ
オンを第二鉄イオンに酸化するために、バブリングなど
により空気の吹き込みを行うことが好ましい。The method of using the surface treating agent of the present invention includes:
A method of spraying the substrate to be processed by a spray and a method of immersing the substrate to be processed in a surface treatment agent are preferable. In the case of immersion, air is preferably blown by bubbling or the like in order to oxidize ferrous ions generated in the liquid by etching into ferric ions.
【0016】[0016]
【実施例】以下、実施例および比較例によって本発明を
詳細に説明するが、本発明はこれらの実施例に制限され
るものではない。EXAMPLES The present invention will be described in detail below with reference to examples and comparative examples, but the present invention is not limited to these examples.
【0017】〔実施例1〜5〕表1に示す成分を混合
し、pH7に調整して表面処理剤を調製した。縦140
mm、横100mm、厚さ1.6mm、穴径0.8mm
のスルホール1000穴を有する基板を用意した。この
基板の片面をソルダーレジストで覆った後、前記表面処
理剤に40℃で1分間浸漬した。次に、この基板を水洗
を行わないで230℃で5分間加熱し、85℃、85%
RHの恒温恒湿槽中に30日間放置してスルホール内の
抵抗を測定することによりスルホール断線の発生率を調
べた。結果を表1に示す。縦70mm、横50mm、厚
さ1.6mmの半田−銅混載基板を前記表面処理剤に4
0℃で1分間浸漬し、半田表面の変色、銅のエッチング
速度を調べた。結果を表1に示す。Examples 1 to 5 The components shown in Table 1 were mixed and adjusted to pH 7 to prepare a surface treating agent. Height 140
mm, width 100mm, thickness 1.6mm, hole diameter 0.8mm
A substrate having 1,000 through holes was prepared. After covering one surface of the substrate with a solder resist, the substrate was immersed in the surface treatment agent at 40 ° C. for 1 minute. Next, this substrate was heated at 230 ° C. for 5 minutes without being washed with water, and was heated at 85 ° C. and 85%
The rate of occurrence of disconnection of the through-hole was determined by measuring the resistance in the through-hole after being left in a constant temperature and humidity chamber of RH for 30 days. Table 1 shows the results. A solder-copper mixed board having a length of 70 mm, a width of 50 mm, and a thickness of 1.6 mm was added to the surface treatment agent by 4
It was immersed at 0 ° C. for 1 minute, and the discoloration of the solder surface and the etching rate of copper were examined. Table 1 shows the results.
【0018】〔比較例1〜3〕表1に示す成分を混合
し、表面処理剤を調製した。実施例1と同様にして、評
価を行った。結果を表1に示す。Comparative Examples 1 to 3 The components shown in Table 1 were mixed to prepare a surface treating agent. Evaluation was performed in the same manner as in Example 1. Table 1 shows the results.
【0019】〔比較例4〕表1に示す成分を混合し、p
H6.5に調整した。実施例1と同様にして、評価を行
った。結果を表1に示す。Comparative Example 4 The components shown in Table 1 were mixed, and p
Adjusted to H6.5. Evaluation was performed in the same manner as in Example 1. Table 1 shows the results.
【0020】[0020]
【表1】 [Table 1]
【0021】[0021]
【発明の効果】本発明のエッチング処理剤は、処理後の
水洗が不十分な場合においても回路を腐食する惧れがな
い。また、半田を処理してもその表面がほとんど変色せ
ず、銅−半田混載基板に好適な表面処理剤である。さら
に、処理液のpHを5〜8の中性領域に調整してあるた
め、作業環境を飛躍的に改善することができる。The etching treatment agent of the present invention has no fear of corroding the circuit even when the washing after treatment is insufficient. Further, even when the solder is processed, the surface thereof hardly discolors, and is a surface treatment agent suitable for a copper-solder mixed board. Further, since the pH of the processing solution is adjusted to a neutral range of 5 to 8, the working environment can be dramatically improved.
Claims (2)
ロゲンイオン及びイミダゾール化合物、あるいはコンプ
レクサン化合物の第二鉄錯体とハロゲンイオンまたはイ
ミダゾール化合物のいずれかを必須成分として含む水溶
液からなり、溶液のpHを5〜8の範囲に調整したこと
を特徴とする銅および銅合金のエッチング処理剤。1. An aqueous solution comprising a ferric complex of a complexan compound, a halogen ion and an imidazole compound, or an aqueous solution containing a ferric complex of a complexan compound and either a halogen ion or an imidazole compound as essential components. Was adjusted to the range of 5 to 8, and an etching treatment agent for copper and a copper alloy.
ロゲンイオン及びイミダゾール化合物、あるいはコンプ
レクサン化合物の第二鉄錯体とハロゲンイオンまたはイ
ミダゾール化合物のいずれかを必須成分として含む水溶
液に、有機酸、錯化剤、界面活性剤及び高分子化合物の
いずれか1種あるいはそれ以上を添加し、溶液のpHを
5〜8の範囲に調整したことを特徴とする銅および銅合
金の表面処理剤。2. An aqueous solution containing a ferric complex of a complexan compound, a halogen ion and an imidazole compound, or a ferric complex of a complexan compound and either a halogen ion or an imidazole compound as an essential component, an organic acid or a complex. A surface treating agent for copper and copper alloys, wherein one or more of an agent, a surfactant and a polymer compound are added to adjust the pH of the solution to a range of 5 to 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11132518A JP2000328268A (en) | 1999-05-13 | 1999-05-13 | Etching treating agent for copper and copper alloy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11132518A JP2000328268A (en) | 1999-05-13 | 1999-05-13 | Etching treating agent for copper and copper alloy |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000328268A true JP2000328268A (en) | 2000-11-28 |
Family
ID=15083206
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11132518A Pending JP2000328268A (en) | 1999-05-13 | 1999-05-13 | Etching treating agent for copper and copper alloy |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000328268A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009530846A (en) * | 2006-03-22 | 2009-08-27 | マクダーミッド インコーポレーテッド | Undercoat composition for organic soldering protection formation |
| JP2013124418A (en) * | 2011-12-16 | 2013-06-24 | Mitsubishi Gas Chemical Co Inc | Etching liquid for multi-layered film including copper and molybdenum |
| CN103459672A (en) * | 2011-03-08 | 2013-12-18 | 长濑化成株式会社 | Etching liquid |
| CN114231985A (en) * | 2021-12-10 | 2022-03-25 | 昆山市板明电子科技有限公司 | Copper surface roughening micro-etching solution and use method thereof |
| CN118028814A (en) * | 2023-12-05 | 2024-05-14 | 惠州市新纬亚纳米科技有限公司 | Ceramic copper-clad plate surface treating agent and ceramic copper-clad plate surface treating working solution |
| CN120857364A (en) * | 2025-07-30 | 2025-10-28 | 江苏富乐华功率半导体研究院有限公司 | A method for reducing copper residues from solder etching of AMB copper-clad ceramic substrates |
-
1999
- 1999-05-13 JP JP11132518A patent/JP2000328268A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009530846A (en) * | 2006-03-22 | 2009-08-27 | マクダーミッド インコーポレーテッド | Undercoat composition for organic soldering protection formation |
| CN103459672A (en) * | 2011-03-08 | 2013-12-18 | 长濑化成株式会社 | Etching liquid |
| JP2013124418A (en) * | 2011-12-16 | 2013-06-24 | Mitsubishi Gas Chemical Co Inc | Etching liquid for multi-layered film including copper and molybdenum |
| CN114231985A (en) * | 2021-12-10 | 2022-03-25 | 昆山市板明电子科技有限公司 | Copper surface roughening micro-etching solution and use method thereof |
| CN118028814A (en) * | 2023-12-05 | 2024-05-14 | 惠州市新纬亚纳米科技有限公司 | Ceramic copper-clad plate surface treating agent and ceramic copper-clad plate surface treating working solution |
| CN120857364A (en) * | 2025-07-30 | 2025-10-28 | 江苏富乐华功率半导体研究院有限公司 | A method for reducing copper residues from solder etching of AMB copper-clad ceramic substrates |
| CN120857364B (en) * | 2025-07-30 | 2026-03-24 | 江苏富乐华功率半导体研究院有限公司 | A method for reducing copper residue in solder etching on AMB copper-clad ceramic substrates |
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