JP2000332014A - 絶縁膜 - Google Patents

絶縁膜

Info

Publication number
JP2000332014A
JP2000332014A JP11142616A JP14261699A JP2000332014A JP 2000332014 A JP2000332014 A JP 2000332014A JP 11142616 A JP11142616 A JP 11142616A JP 14261699 A JP14261699 A JP 14261699A JP 2000332014 A JP2000332014 A JP 2000332014A
Authority
JP
Japan
Prior art keywords
nitrogen
insulating film
peak
silicon
interface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11142616A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000332014A5 (2
Inventor
Yasuyuki Tamura
泰之 田村
Satoshi Okubo
聡 大久保
Kiyoshi Irino
清 入野
Kanetake Takasaki
金剛 高崎
Mayumi Shigeno
真弓 滋野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11142616A priority Critical patent/JP2000332014A/ja
Publication of JP2000332014A publication Critical patent/JP2000332014A/ja
Publication of JP2000332014A5 publication Critical patent/JP2000332014A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
JP11142616A 1999-05-24 1999-05-24 絶縁膜 Pending JP2000332014A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11142616A JP2000332014A (ja) 1999-05-24 1999-05-24 絶縁膜

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11142616A JP2000332014A (ja) 1999-05-24 1999-05-24 絶縁膜

Publications (2)

Publication Number Publication Date
JP2000332014A true JP2000332014A (ja) 2000-11-30
JP2000332014A5 JP2000332014A5 (2) 2004-12-09

Family

ID=15319483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11142616A Pending JP2000332014A (ja) 1999-05-24 1999-05-24 絶縁膜

Country Status (1)

Country Link
JP (1) JP2000332014A (2)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005197642A (ja) * 2003-12-30 2005-07-21 Hynix Semiconductor Inc 半導体素子の酸化膜形成方法
US7361613B2 (en) * 2002-09-17 2008-04-22 Fujitsu Limited Semiconductor device, manufacture and evaluation methods for semiconductor device, and process condition evaluation method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7361613B2 (en) * 2002-09-17 2008-04-22 Fujitsu Limited Semiconductor device, manufacture and evaluation methods for semiconductor device, and process condition evaluation method
CN100401493C (zh) * 2002-09-17 2008-07-09 富士通株式会社 半导体器件及其评估方法和处理条件评估方法
JP2005197642A (ja) * 2003-12-30 2005-07-21 Hynix Semiconductor Inc 半導体素子の酸化膜形成方法

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