JP2000332014A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2000332014A5 JP2000332014A5 JP1999142616A JP14261699A JP2000332014A5 JP 2000332014 A5 JP2000332014 A5 JP 2000332014A5 JP 1999142616 A JP1999142616 A JP 1999142616A JP 14261699 A JP14261699 A JP 14261699A JP 2000332014 A5 JP2000332014 A5 JP 2000332014A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- nitrogen
- insulating film
- gas
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Description
【発明の名称】絶縁膜及び絶縁膜の生成方法 [Title of Invention] An insulating film and a method for producing the insulating film
【０００１】
【発明の属する技術分野】
本発明は、フラッシュ・メモリのトンネル絶縁膜、或いは、通常の電界効果トランジスタに於けるゲート絶縁膜など薄膜の絶縁膜及び絶縁膜の生成方法の改良に関する。[0001]
[Technical field to which the invention belongs]
The present invention relates to an improvement of a thin film insulating film such as a tunnel insulating film of a flash memory or a gate insulating film in a normal field effect transistor and a method for forming the insulating film.
【００３０】
前記したところから、本発明に依る絶縁膜及び絶縁膜の生成方法に於いては、
（ａ）
基体（例えばシリコンからなるウエハや基板）表面上に形成されて少なくともシリコン及び酸素及び窒素を含む材料（例えばシリコン酸窒化膜を構成できる材料）からなる絶縁膜であって、光電子分光法に依る分析において、炭素１ｓピーク位置に依る帯電補正を行って得られる窒素１ｓピークが、同じく帯電補正したＳｉ3 Ｎ4 結晶の窒素１ｓピーク位置と同じ位置になるように窒素が存在することを特徴とするか、或いは、
（ｂ）
前記（ａ）に於いて、前記窒素は、前記基体との界面及びその近傍（例えば界面から約５〔Å〕程度）に存在することを特徴とするか、或いは、
（ｃ）
前記（ａ）又は（ｂ）に於いて、前記基体との界面及びその近傍を電子分光法で分析した場合に得られる窒素１ｓピーク位置が、光電子取り出し角を変化させても変化しない範囲の厚さであることを特徴とするか、或いは、
（ｄ）
熱処理装置内に基体を設置し、前記熱処理装置内に酸素ガスを導入して前記基体の熱酸化処理を行ない、前記酸素ガスの導入を停止して不活性ガスを導入し、ＮＯガスと前記不活性ガスとを所定の割合で同時に導入して前記基体の酸窒化処理を行ない、前記ＮＯガスの導入を停止して前記熱処理装置内の温度を降温することを特徴とするか、或いは、
（ｅ）
前記（ｄ）に於いて、前記基体の酸窒化処理を行う際に、前記熱処理装置内の温度を所定温度に昇温することを特徴とする。 [0030]
From the above, in the insulating film and the method for producing the insulating film according to the present invention,
(A)
And at least silicon and oxygen and nitrogen (which can comprise, for example, a silicon oxynitride film material) material containing Tona Ru insulating film formed on a substrate (e.g. a wafer or substrate made of silicon) on the surface, due to photoelectron spectroscopy in the analysis, and wherein the nitrogen 1s peak obtained by performing electrostatic correction due to the carbon 1s peak positions, similarly charged corrected Si 3 N 4 nitrogen to be the same position as the nitrogen 1s peak position of the crystal is present Or
(B)
In the above (a), the nitrogen is characterized by being present at the interface with the substrate and its vicinity (for example, about 5 [Å] from the interface), or.
(C)
In (a) or (b), the thickness of the nitrogen 1s peak position obtained when the interface with the substrate and its vicinity are analyzed by electron spectroscopy does not change even if the photoelectron extraction angle is changed. Characterized by the fact that it is
(D)
A substrate is installed in the heat treatment apparatus, oxygen gas is introduced into the heat treatment apparatus to perform thermal oxidation treatment of the substrate, the introduction of the oxygen gas is stopped and an inert gas is introduced, and NO gas and the non-existent gas are introduced. It is characterized in that the active gas is simultaneously introduced at a predetermined ratio to perform the oxynitride treatment of the substrate, the introduction of the NO gas is stopped, and the temperature in the heat treatment apparatus is lowered.
(E)
The feature of the above (d) is that the temperature inside the heat treatment apparatus is raised to a predetermined temperature when the oxynitriding treatment of the substrate is performed.
【００６３】
【発明の効果】
本発明に依る絶縁膜及び絶縁膜の生成方法に於いては、少なくともシリコン及び酸素及び窒素を含む材料からなる絶縁膜であって、光電子分光法に依る分析において、炭素１ｓピーク位置に依る帯電補正を行って得られる窒素１ｓピークが、同じく帯電補正したＳｉ3 Ｎ4 結晶の窒素１ｓピーク位置と同じ位置になるように窒素が存在することを特徴とする絶縁膜を実現する。 [0063]
【Effect of the invention】
Is In the generation method of the insulating film and the insulating film according to the present invention, at least silicon and oxygen and a Ru insulating film name of a material containing nitrogen, in the analysis due to photoelectron spectroscopy, it depends on the carbon 1s peak positions charged nitrogen 1s peak obtained by performing correction, similarly charged corrected Si 3 N 4 nitrogen to be the same position as the nitrogen 1s peak position of the crystal realizes the insulating film, which exist.
Claims (5)
光電子分光法に依る分析において、炭素１ｓピーク位置に依る帯電補正を行って得られる窒素１ｓピークが、同じく帯電補正したＳｉ3 Ｎ4 結晶の窒素１ｓピーク位置と同じ位置になるように窒素が存在すること
を特徴とする絶縁膜。 A Ru insulating film name of a material containing at least silicon and oxygen and nitrogen are formed on the substrate surface,
In the analysis according to the photoelectron spectroscopy, there is nitrogen as nitrogen 1s peak obtained by performing electrostatic correction due to the carbon 1s peak position, the same position as the same charge corrected Si 3 N 4 nitrogen 1s peak position of the crystal An insulating film characterized by:
を特徴とする請求項１に記載の絶縁膜。The insulating film according to claim 1, wherein the nitrogen is present at an interface with the substrate and in the vicinity thereof.
を特徴とする請求項１或いは請求項２記載の絶縁膜。Claim 1 nitrogen 1s peak positions obtained when analyzed by the interface and near the electron spectroscopy thereof with the substrate, and wherein the varying the photoelectron take-off angle ranges in thickness that does not change Alternatively, the insulating film according to claim 2.
前記熱処理装置内に酸素ガスを導入して前記基体の熱酸化処理を行ない、Oxygen gas is introduced into the heat treatment apparatus to thermally oxidize the substrate;
前記酸素ガスの導入を停止して不活性ガスを導入し、Stopping the introduction of the oxygen gas and introducing an inert gas;
ＮＯガスと前記不活性ガスとを所定の割合で同時に導入して前記基体の酸窒化処理を行ない、Performing oxynitridation treatment on the substrate by simultaneously introducing NO gas and the inert gas at a predetermined ratio;
前記ＮＯガスの導入を停止して前記熱処理装置内の温度を降温することStopping the introduction of the NO gas to lower the temperature in the heat treatment apparatus
を特徴とする絶縁膜の生成方法。A method of forming an insulating film characterized by
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11142616A JP2000332014A (en) | 1999-05-24 | 1999-05-24 | Insulating film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11142616A JP2000332014A (en) | 1999-05-24 | 1999-05-24 | Insulating film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000332014A JP2000332014A (en) | 2000-11-30 |
| JP2000332014A5 true JP2000332014A5 (en) | 2004-12-09 |
Family
ID=15319483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11142616A Pending JP2000332014A (en) | 1999-05-24 | 1999-05-24 | Insulating film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000332014A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004111538A (en) * | 2002-09-17 | 2004-04-08 | Fujitsu Ltd | Semiconductor device, semiconductor device manufacturing method and evaluation method, and process condition evaluation method |
| KR100567530B1 (en) * | 2003-12-30 | 2006-04-03 | 주식회사 하이닉스반도체 | Oxide film formation method of semiconductor device |
-
1999
- 1999-05-24 JP JP11142616A patent/JP2000332014A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20230074163A1 (en) | Sonos ono stack scaling | |
| US6509283B1 (en) | Thermal oxidation method utilizing atomic oxygen to reduce dangling bonds in silicon dioxide grown on silicon | |
| JP4340830B2 (en) | Method for forming gate insulating film of semiconductor device | |
| US6025280A (en) | Use of SiD4 for deposition of ultra thin and controllable oxides | |
| JPH09139437A5 (en) | ||
| JPH1032328A (en) | Gate insulating film forming method | |
| JP2007515078A (en) | Method for forming a silicon oxynitride layer | |
| US7160818B2 (en) | Semiconductor device and method for fabricating same | |
| JP3143670B2 (en) | Oxide thin film forming method | |
| JP2000332014A5 (en) | ||
| TWI245347B (en) | Method of fabricating a semiconductor structure | |
| US7358198B2 (en) | Semiconductor device and method for fabricating same | |
| US7534731B2 (en) | Method for growing a thin oxynitride film on a substrate | |
| USRE40113E1 (en) | Method for fabricating gate oxide | |
| JP2963975B2 (en) | Method of forming silicon oxide film | |
| JP2000357690A (en) | Insulating film, method of forming the same, and semiconductor device using the insulating film | |
| JP3250996B2 (en) | Silicon substrate having insulating film on surface and method and apparatus for manufacturing the same | |
| US20060094259A1 (en) | Forming gas anneal process for high dielectric constant gate dielectrics in a semiconductor fabrication process | |
| JP3041066B2 (en) | Insulating film forming method | |
| JPH07335876A (en) | Method for forming gate insulating film | |
| US20040241948A1 (en) | Method of fabricating stacked gate dielectric layer | |
| JPH11261065A (en) | Manufacturing method of silicon gate FET | |
| JPH11284183A (en) | Semiconductor device manufacturing method and manufacturing apparatus | |
| JP2004146665A (en) | Method for manufacturing semiconductor device | |
| JP2001110807A (en) | Method for forming thin insulation film |