JP2000500291A - 冷却レーザダイオードアレイ組立体 - Google Patents
冷却レーザダイオードアレイ組立体Info
- Publication number
- JP2000500291A JP2000500291A JP9518620A JP51862097A JP2000500291A JP 2000500291 A JP2000500291 A JP 2000500291A JP 9518620 A JP9518620 A JP 9518620A JP 51862097 A JP51862097 A JP 51862097A JP 2000500291 A JP2000500291 A JP 2000500291A
- Authority
- JP
- Japan
- Prior art keywords
- assembly
- array
- arrays
- base
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001816 cooling Methods 0.000 claims abstract description 16
- 239000007788 liquid Substances 0.000 claims abstract description 10
- 238000003491 array Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 description 7
- 238000005086 pumping Methods 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 239000002826 coolant Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000010292 electrical insulation Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910001369 Brass Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000010951 brass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000005679 Peltier effect Effects 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 239000000110 cooling liquid Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000009022 nonlinear effect Effects 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229920004943 Delrin® Polymers 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000010485 coping Effects 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Lasers (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1. 複数のN型レーザダイオードアレイ(4)から成る組立体であって: − 各ダイオードが、陽極部を形成し且つ孔部(10)が形成されたベース部 (6)の端部に組み立てられており、全ての前記孔部は、前記各ダイオードアレ イの線形組立体を冷却するための液体循環用のチャンネルを規定し、一つの前記 アレイ(4)により構成される各モジュール(20,22,24,26)、ベー ス部(6)及び陰極部(14)は、フラット状ジョイント(32,34,36, 38)によって、それぞれ隣接するモジュールから分離され、 − 前記各ベース部には、第二の孔部(12)が形成されているとともに、こ れら全ての第二の孔部は、前記各アレイが動作位置に並置されたときに整列配置 されるように形成されており、 − 二つの保持フランジ(46,48)が、前記各アレイの前記線形組立体の 両端部に配置され、前記各フランジは、前記第二の孔部全てを介して前記組立体 を貫通するネジ(42)によって締結されていることを特徴とする組立体。 2. 前記ネジは、絶縁用外被によって外周部が覆われていることを特徴とする 請求項1記載の組立体。 3. 前記各ダイオードアレイに電力供給するための電気手段(50)を有する ことを特徴とする請求項1または2に記載の組立体。 4. 前記各アレイ(4)と結合された前記陽極部(6)が、隣接する前記アレ イの陰極部(14)に接続されていることを特徴とする請求項1〜3のいずれか 1つに記載の組立体。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9513400A FR2741208B1 (fr) | 1995-11-13 | 1995-11-13 | Assemblage de barrettes de diodes laser refroidies |
| FR95/13400 | 1995-11-13 | ||
| PCT/FR1996/001772 WO1997018606A1 (fr) | 1995-11-13 | 1996-11-08 | Assemblage de barrettes de diodes laser refroidies |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000500291A true JP2000500291A (ja) | 2000-01-11 |
| JP4142099B2 JP4142099B2 (ja) | 2008-08-27 |
Family
ID=9484490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51862097A Expired - Fee Related JP4142099B2 (ja) | 1995-11-13 | 1996-11-08 | 冷却レーザダイオードアレイモジュール組立体 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6091746A (ja) |
| EP (1) | EP0861511B1 (ja) |
| JP (1) | JP4142099B2 (ja) |
| DE (1) | DE69604082T2 (ja) |
| FR (1) | FR2741208B1 (ja) |
| WO (1) | WO1997018606A1 (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002141221A (ja) * | 2000-11-02 | 2002-05-17 | Shindengen Electric Mfg Co Ltd | ソレノイド |
| JP3473540B2 (ja) | 2000-02-23 | 2003-12-08 | 日本電気株式会社 | 半導体レーザの冷却装置 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9720376D0 (en) * | 1997-09-26 | 1997-11-26 | Marconi Gec Ltd | A semi-conductor laser diode bar assembly |
| JP3830364B2 (ja) * | 2001-07-24 | 2006-10-04 | ファナック株式会社 | 固体レーザ励起用光源装置 |
| US7305016B2 (en) * | 2005-03-10 | 2007-12-04 | Northrop Grumman Corporation | Laser diode package with an internal fluid cooling channel |
| CN100492787C (zh) * | 2006-07-27 | 2009-05-27 | 中国科学院半导体研究所 | 大功率激光二极管线列阵冷却装置 |
| DE102007019576A1 (de) * | 2006-09-29 | 2008-04-03 | Osram Opto Semiconductors Gmbh | Modulträger für ein elektronisches Modul, elektronisches Modul mit einem derartigen Modulträger, Modulanordnung mit einer Mehrzahl von Modulen und Bausatz für eine Modulanordnung |
| WO2014177616A1 (en) * | 2013-05-02 | 2014-11-06 | Koninklijke Philips N.V. | Cooling device for cooling a laser arrangement and laser system comprising cooling devices |
| DE202014007923U1 (de) | 2014-01-21 | 2014-10-28 | Bjb Gmbh & Co. Kg | Lampenfassung und Lampensockel, System aus Lampenfassung und Lampensockel |
| CN104577707A (zh) * | 2014-12-31 | 2015-04-29 | 西安炬光科技有限公司 | 一种叠层阵列液体制冷型高功率半导体激光器 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4315225A (en) * | 1979-08-24 | 1982-02-09 | Mcdonnell Douglas Corporation | Heat sink laser diode array |
| DE8908049U1 (de) * | 1989-07-01 | 1989-08-24 | Carl Zeiss, 89518 Heidenheim | Kühleinrichtung für Halbleiterpumplichtquellen |
| US5105429A (en) * | 1990-07-06 | 1992-04-14 | The United States Of America As Represented By The Department Of Energy | Modular package for cooling a laser diode array |
| US5105430A (en) * | 1991-04-09 | 1992-04-14 | The United States Of America As Represented By The United States Department Of Energy | Thin planar package for cooling an array of edge-emitting laser diodes |
| US5317585A (en) * | 1992-08-17 | 1994-05-31 | Hughes Aircraft Company | Laser reflecting cavity with ASE suppression and heat removal |
| US5394427A (en) * | 1994-04-29 | 1995-02-28 | Cutting Edge Optronics, Inc. | Housing for a slab laser pumped by a close-coupled light source |
-
1995
- 1995-11-13 FR FR9513400A patent/FR2741208B1/fr not_active Expired - Fee Related
-
1996
- 1996-11-08 EP EP96938289A patent/EP0861511B1/fr not_active Expired - Lifetime
- 1996-11-08 WO PCT/FR1996/001772 patent/WO1997018606A1/fr not_active Ceased
- 1996-11-08 DE DE69604082T patent/DE69604082T2/de not_active Expired - Lifetime
- 1996-11-08 JP JP51862097A patent/JP4142099B2/ja not_active Expired - Fee Related
- 1996-11-08 US US09/068,478 patent/US6091746A/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3473540B2 (ja) | 2000-02-23 | 2003-12-08 | 日本電気株式会社 | 半導体レーザの冷却装置 |
| JP2002141221A (ja) * | 2000-11-02 | 2002-05-17 | Shindengen Electric Mfg Co Ltd | ソレノイド |
Also Published As
| Publication number | Publication date |
|---|---|
| DE69604082T2 (de) | 2000-05-31 |
| DE69604082D1 (de) | 1999-10-07 |
| WO1997018606A1 (fr) | 1997-05-22 |
| US6091746A (en) | 2000-07-18 |
| EP0861511B1 (fr) | 1999-09-01 |
| FR2741208A1 (fr) | 1997-05-16 |
| EP0861511A1 (fr) | 1998-09-02 |
| JP4142099B2 (ja) | 2008-08-27 |
| FR2741208B1 (fr) | 1997-12-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5930279A (en) | Diode laser device arranged in the form of semiconductor arrays | |
| US5828683A (en) | High density, optically corrected, micro-channel cooled, v-groove monolithic laser diode array | |
| US7305016B2 (en) | Laser diode package with an internal fluid cooling channel | |
| RU2117371C1 (ru) | Матрица лазерных диодов | |
| US5140607A (en) | Side-pumped laser with angled diode pumps | |
| JPH05508265A (ja) | 端面発光レーザダイオードのアレーの冷却用薄板パッケージ | |
| US7016383B2 (en) | Immersion-cooled monolithic laser diode array and method of manufacturing the same | |
| JP7228856B2 (ja) | 高パワーレーザシステムにおける熱インタフェース材料のポンピングの対処のためのシステム及び方法 | |
| WO2014070593A1 (en) | Macro-channel water-cooled heat-sink for diode-laser bars | |
| US20110069731A1 (en) | Scalable thermally efficient pump diode assemblies | |
| JP2000500291A (ja) | 冷却レーザダイオードアレイ組立体 | |
| CN101164163B (zh) | 散热器和具有它的激光器装置以及激光器堆栈装置 | |
| US20020110165A1 (en) | Method and system for cooling at least one laser diode with a cooling fluid | |
| EP0973237A1 (en) | Semiconductor laser device | |
| US20060107986A1 (en) | Peltier cooling systems with high aspect ratio | |
| Loosen | Cooling and packaging of high-power diode lasers | |
| US9941658B2 (en) | Stackable electrically-isolated diode-laser bar assembly | |
| US4864584A (en) | Laser diode pumped ND:YAG laser and method of making same | |
| US20070253458A1 (en) | Diode pumping of a laser gain medium | |
| JP3154689B2 (ja) | 半導体レーザ励起スラブ固体レーザ装置 | |
| JP3153856B2 (ja) | 半導体レーザ励起スラブ固体レーザ装置 | |
| JP2003152259A (ja) | 半導体レーザ組立体 | |
| JP4017269B2 (ja) | 平行光発生装置 | |
| JP4536404B2 (ja) | レーザアレイユニット | |
| JP3224775B2 (ja) | 半導体レーザ励起スラブ固体レーザ装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20051220 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060316 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20060509 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080422 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20080612 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110620 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110620 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120620 Year of fee payment: 4 |
|
| LAPS | Cancellation because of no payment of annual fees |