JP2002105652A - Vacuum processing apparatus and vacuum processing method - Google Patents

Abstract

(57) Abstract: To provide uniform vacuum processing characteristics in vacuum processing of a substrate 102 performed by supplying high frequency power and generating plasma. SOLUTION: A cylindrical base 102 is provided with a holder base 1.
04, and a holder cap 1 above it.
A vacuum process is performed with 03 fitted. The holder cap 103 has a flange 105 protruding in the radial direction.
Is provided. Thus, the propagation distance of the reflected wave at the end of the holder cap 103 to the base 102 of the high-frequency electric field generated near the outer peripheral surfaces of the base 102 and the holder cap 103 due to the high-frequency power can be extended. The vacuum processing characteristics can be made uniform by preventing standing waves from being clearly generated.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to deposition using plasma generated by high-frequency power, which is used in forming semiconductor devices, electrophotographic photosensitive members, image input line sensors, photographing devices, photovoltaic devices, and the like. The present invention relates to a vacuum processing method for performing film formation, etching, and the like, and a vacuum processing apparatus therefor.

[0002]

2. Description of the Related Art Conventionally, plasma C has been used as a vacuum processing method for forming semiconductor devices, electrophotographic photoreceptors, image input line sensors, photographing devices, photovoltaic devices, and other various electronic and optical elements.
Many methods using plasma generated by high-frequency power, such as a VD method, an ion plating method, and a plasma etching method, are known, and apparatuses for the method are also put to practical use.

For example, a plasma CVD method, that is, a method in which a raw material gas is decomposed and deposited by high-frequency glow discharge to form a thin deposited film on a substrate has been put to practical use as a suitable deposited film forming means. It is used for forming a deposited film of hydrogenated amorphous silicon for electrophotography (hereinafter, referred to as “a-Si: H”), and various devices have been proposed.

In particular, in recent years, VHF plasma CVD using VHF band high-frequency power (hereinafter referred to as “VHF-PCV”) has been proposed.
D) has attracted attention, and the development of various deposited film formation using the same has been actively promoted. This is because the VHF-PCVD method is expected to be a method capable of simultaneously achieving low cost and high quality of a product because a film deposition rate is high and a high quality deposited film can be obtained. For example, JP-A-6-287760 discloses an apparatus and a method that can be used for forming a light-receiving member for a-Si electrophotography.

FIG. 5 shows a schematic view of an example of such a conventional deposited film forming apparatus. FIG. 5A is a longitudinal sectional view, and FIG.
FIG. 5B is a cross-sectional view taken along the line AA ′ of FIG. This deposition film forming apparatus has a reaction vessel 501 whose inside can be depressurized. An exhaust pipe 514 is integrally formed on a side surface of the reaction vessel 501, and the other end of the exhaust pipe 514 is connected to an exhaust device (not shown).

At the center of the bottom surface of the reaction vessel 501, there is provided a cylindrical rotary shaft 507 connected to a motor 509 via a reduction gear 508. The rotating shaft 507 has
A cylindrical substrate 502 on which a deposited film is to be formed is fitted on the outer periphery of a cylindrical holder base 504, and a holder cap 503 is fitted and held thereabove. In this way, the substrate 502 is
1 and driven by a motor 509 to rotate around its central axis in the generatrix direction. A heating element 506 for heating the base 502 is provided at a central portion inside the rotation shaft 507 and the holder base 504.

[0007] Around the base 502, there are four source gas supply pipes 513 for supplying a source gas, which is a constituent of a deposited film, into the reaction vessel 501 at equal intervals around the same circumference so as to surround the base 502. Are located. Similarly, four cathode electrodes 510 for supplying high-frequency power such as a VHF frequency band for generating plasma into the reaction vessel 501 are arranged at equal intervals on the same circumference so as to surround the base 502. The cathode electrode 510 is connected to a high frequency power supply 512 via a matching box 511. Substrate 502
Is maintained at the ground potential through the rotating shaft 507,
When high frequency power is supplied, it functions as an anode electrode for the cathode electrode 510.

The formation of a deposited film using such an apparatus can be performed according to the following procedure. First, the base 502 is set in the reaction vessel 501, and the inside of the reaction vessel 501 is exhausted through an exhaust pipe 514 by an exhaust device (not shown). Subsequently, the heating element 506 attaches the base 502 to 200
The heating is performed to a predetermined temperature of about 300C to about 300C, and the temperature is controlled to be maintained.

When the temperature of the substrate 502 reaches a predetermined temperature, a source gas is introduced into the reaction vessel 501 through a source gas supply pipe 513. After confirming that the flow rate of the raw material gas has reached the set flow rate and that the pressure in the reaction vessel 501 has been stabilized, the matching box 511 is output from the high-frequency power supply 512.
Then, a high-frequency power in a predetermined VHF frequency band or the like is supplied to the cathode electrode 510 through the above. Thereby, the reaction vessel 501
A glow discharge is generated therein, and the source gas is excited and dissociated and is deposited on the base 502 to form a deposited film. After the formation of the deposited film having the desired film thickness, the supply of the high-frequency power is stopped, the supply of the source gas is stopped, and the formation of the deposited film is completed. By repeating the same operation a plurality of times, a device having a desired multilayer structure, for example, a light receiving layer of an electrophotographic photosensitive member is formed.

During formation of the deposited film, the substrate 502 is
, A uniform deposition film is formed over the entire surface of the substrate 502 by rotating the substrate 502 at a predetermined speed.

[0011]

By using the conventional method and apparatus as described above, good deposition film formation,
That is, vacuum processing can be performed. However,
Market requirements for products manufactured using such vacuum processing methods and vacuum processing equipment are increasing day by day, and in order to meet this demand, a vacuum processing method and a vacuum processing method capable of producing higher quality products at low cost. Vacuum processing equipment has been required.

For example, in the case of forming an electrophotographic photoreceptor using a plasma CVD method or a plasma CVD apparatus, digital electrophotographic apparatuses and color electrophotographic apparatuses, which have been remarkably popular in recent years, are not limited to character manuscripts, but include photographs, pictures, Copies of design drawings and the like are also being made frequently. Therefore, the required level for reducing the density unevenness of a copied image is extremely high, and it is urgently necessary to provide an electrophotographic apparatus which can cope with this.

Although various technical studies have been made to reduce the density unevenness of a copy image, it is inevitable to improve the uniformity of the characteristics of the electrophotographic photosensitive member. It is an issue. In order to solve this problem, there is a strong demand for an electrophotographic photoconductor forming apparatus and an electrophotographic photoconductor forming method capable of further improving the uniformity of vacuum processing characteristics.

The demand for the improvement of the uniformity of the vacuum processing characteristics is not limited to the case where each product has a large area as in the case of the electrophotographic photoreceptor described above, but the area of each product. Is relatively small, there is a strong demand, for example, from the viewpoint of reducing production costs. This is because when a plurality of workpieces are vacuum-processed simultaneously to improve productivity, if the vacuum processing characteristics are not uniform, the processing characteristics differ for each workpiece even if they are arranged in the same lot. This is because a required level of processing characteristics may not be obtained for some of the objects to be processed, and the yield rate at the time of production is reduced.

As described above, a vacuum processing apparatus and a vacuum processing method capable of improving the uniformity of the vacuum processing characteristics are strongly demanded from the viewpoint of not only improving the characteristics of the product but also reducing the production cost.

An object of the present invention is to solve such a problem. That is, an object of the present invention is to improve uniformity of vacuum processing characteristics in a vacuum processing apparatus and a vacuum processing method for performing vacuum processing on a substrate using plasma generated by high-frequency power,
It is an object of the present invention to provide a vacuum processing apparatus and a vacuum processing method capable of improving product quality and improving a non-defective product rate and reducing production cost.

[0017]

The present inventors have made intensive studies to achieve the above object, and as a result, the standing wave of the high-frequency electric field generated on the substrate is one of the causes of non-uniform processing characteristics. I found that.

By arranging a conductive brim-shaped protruding portion on the auxiliary substrate which comes into contact with the substrate when forming a deposited film, the phase of the standing wave on the substrate can be adjusted. The inventor has found that this is extremely effective in improving the uniformity of the vacuum processing characteristics, and has completed the present invention.

That is, the vacuum processing apparatus according to the present invention comprises:
The reactor has a reaction vessel in which the inside can be decompressed and a base is disposed, an exhaust means for decompressing the inside of the reaction vessel, and a high-frequency power supply means for supplying high-frequency power to the inside of the reaction vessel. A vacuum processing apparatus for performing vacuum processing on a processing surface of a substrate by using a processed plasma, comprising a portion made of a conductive material and connected to the substrate so as to extend the processing surface of the substrate in at least one direction. It has an auxiliary substrate, and the auxiliary substrate has a protrusion formed so as to protrude outward from a portion connected to extend a processing surface of the substrate.

According to this structure, the high-frequency electric field generated in the vicinity of the processing surface of the base and the surface connected to the processing surface of the auxiliary base due to the high-frequency power is reflected by the reflected wave generated at the end of the auxiliary base. The propagation distance from the end can be extended by providing a protrusion. The reflected wave is attenuated as it propagates, so by extending the propagation distance, the reflected wave can be attenuated to a greater extent until it reaches the base, and the standing wave of the high-frequency electric field is generated on the base. By avoiding the clear occurrence, the influence of the standing wave on the vacuum processing characteristics can be significantly reduced, and the uniformity of the vacuum processing characteristics can be improved.

The effect of making the vacuum processing characteristics non-uniform due to the generation of the standing wave of the high-frequency electric field on the substrate is caused by the fact that the high-frequency electric field is reflected at a position near the end where the reflected wave is generated.
It is relatively large at the node of the high frequency electric field standing wave. Therefore, by forming the node portion on the auxiliary substrate, the effect of the standing wave on the vacuum processing characteristics can be particularly greatly reduced. This can be realized by adjusting the size and number of the protruding portions.

In the vacuum processing apparatus according to the present invention, a cylindrical base is preferably used. In this case, the auxiliary base is provided with a portion connected to extend at least one axial end of the base, and is provided with a protrusion. The portion can be formed in a brim shape projecting radially outward.

In the vacuum processing apparatus of the present invention, if the length of the protruding portion is longer than the length of the sheath of the plasma, the reflected wave can pass through a curved propagation path along the surface of the protruding portion. Can be effectively extended.

A plurality of protruding portions can be provided. In this case, if the interval between the protruding portions is set to be longer than twice the plasma sheath length, the high-frequency electric field propagates from top to bottom of the protruding portion. Without passing through, it is possible to pass through a curved propagation path along the surfaces of the plurality of protrusions, and it is possible to effectively extend the propagation distance of the reflected wave.

When the present invention is not applied, a standing wave of a high-frequency electric field is generated on the substrate, which greatly affects the vacuum processing characteristics when the frequency of the supplied high-frequency power is 50 MHz to 450 MHz. It is. Therefore, the present invention can be particularly suitably applied to a vacuum processing apparatus that performs processing using high-frequency power of this frequency.

When the present invention is not applied, the effect of the high-frequency electric field standing wave on the vacuum processing characteristics is because the standing wave is generated on the processing surface when a conductive substrate is used. Is relatively large. Therefore,
The present invention is particularly effective in a vacuum processing apparatus for processing a conductive substrate. In this case, the high-frequency electric field generated near the processing surface of the base is continuously propagated to the surface of the auxiliary base connected to the processing surface so that the reflected wave is not generated at the end of the base and the standing wave is not generated. It is desirable that the base and the auxiliary base be connected as described above.

The present invention particularly relates to an apparatus which further comprises a source gas introducing means for introducing a source gas into a reaction vessel, excites and dissociates the source gas by high frequency power, and deposits it on a substrate to form a deposited film. It can be suitably applied. That is, by applying the present invention to such an apparatus, an effect of making the characteristics of the formed film extremely uniform can be obtained. Further, the present invention can be suitably applied to a vacuum processing apparatus for manufacturing an electrophotographic photoconductor formed by laminating deposited films, in which film quality is required to be uniform over a large area. That is, by applying the present invention to such an apparatus, an apparatus capable of manufacturing an electrophotographic photosensitive member having excellent characteristics can be obtained.

According to the vacuum processing method of the present invention, there are provided a step of arranging a substrate in a reaction vessel capable of depressurizing the inside, a step of evacuating and depressurizing the inside of the reaction vessel, and a step of supplying high-frequency power to the inside of the reaction vessel to perform plasma processing. A vacuum processing method of performing vacuum processing on a processing surface of a substrate using plasma, comprising a protruding portion formed of a conductive material and formed to protrude outward. Vacuum processing is performed in a state in which the auxiliary base having the protrusion forming surface is connected to the base such that the protrusion forming surface extends the processing surface of the base in at least one direction.

In particular, in the plasma generation step,
The nodal portion of the standing wave of the high-frequency electric field generated near the processing surface of the base and the processing surface of the auxiliary substrate due to the high-frequency power is located on the auxiliary substrate closest to the end of the auxiliary substrate. Is preferred.

[0030]

Embodiments of the present invention will be described below with reference to the drawings.

FIGS. 1 and 2 are schematic views of a deposited film forming apparatus according to the present embodiment, for example, capable of forming an electrophotographic photosensitive member. FIG. 1 shows a substrate 102 on which a deposited film is formed.
And a holder body 104 which is an auxiliary substrate for holding the same.
And a cross-sectional view of the holder cap 103.
FIG. 2 is a cross-sectional view of the entire deposited film forming apparatus. FIG. 2 (a) is a longitudinal cross-sectional view, and FIG. 2 (b) is AA ′ in FIG. 2 (a).
It is the cross-sectional view cut | disconnected along the line.

This deposition film forming apparatus has a reaction vessel 201 whose inside can be depressurized. An exhaust port 214 connected to an exhaust device (not shown) is provided on a side portion of the reaction vessel 201. At the center of the bottom of the reaction vessel 201, a cylindrical rotary shaft 207 connected to a motor 209 via a reduction gear 208 is provided. On the rotating shaft 207, the cylindrical base 102 held by these auxiliary bases is fitted with the holder cap 103 fitted over the outer periphery of the cylindrical holder base 104 and the holder cap 103 fitted thereon. The base 102 is in contact with and in contact with the holder base 104 and the holder cap 103. The holder cap 103 is formed by integrally forming a cylindrical portion and, in the example shown in FIG. 2, three disk-shaped flanges (projecting portions) 105 extending radially outward from the cylindrical portion. I have. Rotating shaft 207 and holder body 10
4, a heating element 20 for heating the base 102
6 are provided.

The reaction vessel 201 is further provided with a source gas supply pipe 213 for supplying a source gas, and a high-frequency electrode 210 for supplying high-frequency power for generating plasma. Each high-frequency electrode 2
After the conductors from 10 are joined on the way, they are connected to a high frequency power supply 212 via a matching box 211.

The formation of an electrophotographic photosensitive member using such a deposited film forming apparatus can be performed as follows. First, the base 102 is first placed on the holder base 104.
Then, the holder cap 103 is fitted, and the auxiliary base and the base 102 are combined as shown in FIG.
Then, the base 102 placed on the holder base 104
Is installed in the reaction vessel 201, and the reaction vessel 201 is exhausted from the exhaust port 214 by an exhaust device (not shown)
Exhaust the inside. Subsequently, the base 102 is
Is heated to a predetermined temperature of about 200 ° C. to 300 ° C., and is controlled to be maintained at this temperature. When the temperature of the base body 102 reaches a predetermined temperature, via the raw material gas supply pipe 213,
Source gas is introduced into the reaction vessel 201. After confirming that the flow rate of the raw material gas has reached the set flow rate and that the pressure in the reaction vessel 201 has stabilized, predetermined high-frequency power is supplied from the high-frequency power supply 212 to the high-frequency electrode 210 via the matching box 211. As a result, high-frequency power is supplied into the reaction vessel 201, glow discharge is generated in the reaction vessel 201, and the source gas is excited and dissociated and deposited on the substrate 102, thereby forming a deposited film.

After the formation of the deposited film having the desired film thickness in this manner, the supply of the high-frequency power is stopped, the supply of the source gas is stopped, and the formation of the deposited film for one layer is completed.
By repeating the same operation a plurality of times, a light receiving layer having a desired multilayer structure is formed. During the deposition film formation, the substrate 102
Is rotated at a predetermined speed by the motor 209 via the rotating shaft 207, whereby a uniform deposited film can be formed over the entire surface of the cylindrical substrate 102.

FIGS. 3 and 4 show a modification of the deposited film forming apparatus. In the figure, the same parts as those in FIGS. 1 and 2 are denoted by the same reference numerals, and description thereof will be omitted.

In the modification shown in FIG. 3, a flange 305 is provided not only on the holder cap 103 but also on the end of the holder base 304 opposite to the end where the holder cap 103 is fitted. In the example shown in the figure, the configuration of the heating element 306 and the rotating shaft 307 is also different from those shown in FIGS. 1 and 2, but the basic functions are not changed. The rotation shaft 307 extends to the upper end of the holder base 304, and is connected to the auxiliary base at this portion. The heating element 306 is formed in a cylindrical shape surrounding the rotation shaft 307.

In the modification shown in FIG.
4 and a plurality of bases 402 held on an auxiliary base composed of a holder cap 403 having a collar 405. That is, a plurality of rotation shafts 407, reduction gears 408, and motors 409 are provided around the raw material gas supply pipe 413 provided at the center of the reaction vessel 201 so that the base 402 can be installed on each rotation shaft 407. Has become. The high-frequency electrode 410 is connected to these substrates 40
A plurality is arranged on the circumference surrounding 2.

The deposited film forming apparatus of the present embodiment is characterized in that collars 105, 305 and 405 are provided at the end of the auxiliary base. Such collars 105, 305, 4
With the provision of 05, the nodal portion of the standing wave of the high-frequency electric field, which may be located on the base 102 without this, can be moved toward the end. As a result, a node portion of the standing wave relatively close to the end, which is considered to cause a particularly large drop in characteristics, can be moved from the base 102 to the auxiliary base. Hereinafter, this will be described in more detail.

In a vacuum processing apparatus such as the deposition film forming apparatus shown in FIGS. 1 and 2, the supplied high-frequency power causes a sheath formed on the surface of a conductive member disposed in the reaction vessel 201 to move along the sheath. It is known that a propagated high-frequency electric field may be generated and a standing wave may be generated on a conductive member. Such a standing wave
Vacuum processing characteristics may be non-uniform.

The fact that the vacuum processing characteristics become non-uniform due to the standing wave of the high-frequency electric field has been conventionally known.
Standing waves occurring on the antenna 10 have been studied, and various measures have been proposed. For example, Japanese Patent Application Laid-Open No. 10-168575
According to the publication, it is possible to adjust the capacitance at both ends of the high-frequency electrode 210 to adjust the high-frequency electric field standing wave on the high-frequency electrode 210 and improve the uniformity of the deposited film characteristics. It has been disclosed. Such a high-frequency electrode 21
Although the uniformity of the vacuum processing characteristics has been improved by means and a method for adjusting the high-frequency electric field standing wave on zero, such means alone has a limit in seeking further uniformity. The present inventors have found that one of the causes is a high-frequency electric field standing wave generated on the substrate 102, and can further improve the uniformity of the vacuum processing characteristics by adjusting the phase of the standing wave. It was found that.

Conventionally, a substrate and an auxiliary substrate combined with the substrate are generally brought into a conductive state with a constant potential portion such as a reaction vessel so that a constant potential can be maintained at a direct current, and in many cases, a ground potential. ing. Therefore, no DC electric field is generated on the base and the auxiliary base. However, since the base and the auxiliary base and the conductive part have impedance, a high-frequency electric field can be generated on the base and the auxiliary base. Since the inductance component of the impedance is proportional to the frequency of the high frequency, the higher the frequency, the more easily a high frequency electric field is generated on the base and the auxiliary base.

When high-frequency power having a relatively high frequency is used, the high-frequency power supplied to the reaction vessel propagates through the space inside the reaction vessel and is transmitted to the base and the auxiliary base, and is transmitted to the base and the auxiliary base. Generates a high frequency electric field.
The high-frequency electric field generated on the substrate and the auxiliary substrate is propagated in a sheath generated on the substrate and the auxiliary substrate when the substrate and the auxiliary substrate are conductive, and is reflected at the ends of the substrate and the auxiliary substrate to generate a reflected wave. Occurs. This reflected wave and the high-frequency electric field (incident wave) before reaching the end of the base and the auxiliary base
, A standing wave of a high-frequency electric field is generated on the base and the auxiliary base.

When a standing wave of a high-frequency electric field is generated on the base and the auxiliary base, the electric field is weakened at the node of the standing wave and is increased at the antinode. The strength of the electric field affects the plasma characteristics near the base and the auxiliary base, and as a result, non-uniformity occurs in the vacuum processing characteristics. According to the study of the present inventors, the effect is particularly remarkable on the ion energy incident on the substrate and the auxiliary substrate. That is, the incident ion energy is low at the nodes of the standing wave on the base and the auxiliary base, and high at the antinodes. For this reason, when the vacuum processing characteristics have a large dependency on the incident ion energy, the non-uniformity becomes particularly remarkable.

The effect of the high-frequency electric field standing wave on the vacuum processing characteristics is particularly prominent at the nodes near the reflection end. This is considered to be because the influence of the standing wave is reduced by attenuating the reflected wave due to radiation to the space inside the reaction vessel at a position away from the reflection end.
Therefore, in order to improve the non-uniformity of the vacuum processing characteristics caused by the high-frequency electric field standing wave generated on such a substrate and the auxiliary substrate, a node portion of the high-frequency electric field standing wave particularly at a position close to the reflection end. It is extremely effective to reduce the effect of

Therefore, in the present invention, a collar 105 made of a conductive material is provided on an auxiliary base (holder cap 103 or holder base 104) arranged in contact with the end of the base 102. In other words, by adopting such a configuration, the propagation distance of the high-frequency electric field on the auxiliary base is extended, and the effect on the vacuum processing characteristics is remarkably exhibited.
It is possible to easily move a node portion of the electric field standing wave generated at a position close to the reflection end to the outside of the base 102, that is, onto the auxiliary base. As a result, the vacuum processing characteristics of the substrate 102, which is actually a product such as an electrophotographic photosensitive member, are made uniform. Even if there is a node portion of the electric field standing wave in the auxiliary substrate separated from the product, there is no problem in manufacturing the product. In addition, as the propagation distance from the reflection end to the base 102 increases, the amount of attenuation of the reflected wave in the propagation process increases, and the effect of the high-frequency electric field standing wave on the base 102 is reduced as a whole. It is possible to do.

As a method of extending the propagation distance of the high-frequency electric field on the auxiliary substrate, it is conceivable to simply increase the length of the auxiliary substrate. However, according to the method of this embodiment, the length of the auxiliary substrate is reduced. It is not necessary to make a long change and, accordingly, make a large change such as extending the size of the reaction vessel 201 itself. Further, there is no disadvantage such as a decrease in gas use efficiency due to an increase in the discharge space. Therefore, according to the method as in the present embodiment, it is possible to reduce the influence of the high-frequency electric field standing wave without greatly changing various types of vacuum processing apparatuses or reducing the efficiency.

In the present invention, the moving amount of the node portion of the high-frequency electric field standing wave is determined by the distance from the end of the auxiliary base along the surface,
It is substantially proportional to the extension amount due to the provision of the collar 105. However, if the protrusion amount A (see FIG. 1) of the collar 105 becomes smaller than a certain size, the movement amount of the node portion of the high-frequency electric field standing wave becomes extremely small. This is because the high-frequency electric field propagates along a thick layer called a plasma sheath generated around the base 105, so that the collar 105 blocks the layer beyond the thickness (sheath length) of the sheath. By being arranged in a shape, the high-frequency electric field bends and propagates along the surface of the collar 105,
It is considered that the effect of extending the propagation distance is sufficiently exhibited.

It is preferable that the protrusion amount A of the collar 105 is large because the movement amount of the node of the high-frequency electric field standing wave increases. However, the protrusion amount A is too large, and
If the tip of 05 is too close to the adjacent high-frequency electrode 210, source gas supply pipe 213, wall surface of the reaction vessel 201 forming the discharge space, etc., it is conceivable that these effects may appear on the propagation of the high-frequency electric field. In addition, the workability of setting the auxiliary base is reduced. Therefore, it is preferable that the protrusion amount A is set to an appropriate length that allows a necessary and sufficient distance.

When a plurality of collars 105 are provided, the collar 105
When the arrangement interval B (see FIG. 1) is short, the moving amount of the standing wave may be small. This is because the high-frequency electric field propagates along the plasma sheath, so that the high-frequency electric field does not propagate along the surface of the collar 105 but propagates from one end of the collar 105 to the other as in the case where the protrusion amount A is reduced. It is thought that it is because. For this reason, collar 10
5 is preferably arranged at a distance where the sheaths of the adjacent collars 105 do not come into contact, that is, so that the arrangement interval B between the collars 105 is longer than twice the sheath length.

The specific configuration of the collar 105 is not particularly limited, and may be any configuration as long as the high-frequency electric field propagates substantially continuously along its surface. Basically, it suffices that the surface has conductivity. As a constituent material, for example, Al.Cr.Mo.Au.In.N
metals such as b ・ Te ・ V ・ Ti ・ Pt ・ Pd ・ Fe
These alloys, for example, stainless steel can be used.

Similarly, the auxiliary base on which the collar 105 is provided is
The shape is not particularly limited as long as the high-frequency electric field is combined with the base 102 at a position extending in the axial direction so that the high-frequency electric field is transmitted substantially continuously from the base 102. As the constituent material of the auxiliary base, the same conductive metal or alloy as that of the collar 102 can be used.

Since the auxiliary substrate is repeatedly used through a process such as cleaning for vacuum processing, for example, formation of a deposited film, the collar 105 preferably has a certain thickness so as to have a certain strength. . Spit 105
Is not necessarily plate-like, may be tapered, and the base or tip of the collar 105 may be a curved surface.

The effect on the vacuum processing characteristics is caused by the cylindrical substrate 1
02, it is preferable to dispose the collar 105 at one of the end portions.
If standing wave effects are seen near both ends,
As shown in FIG. 3, the collars 105 and 305 may be arranged at both ends. The state of the high-frequency electric field propagating on the base 102 varies depending on the configuration of the apparatus, particularly the configuration of the support portion of the base 102, and the end that becomes the reflection end that generates a standing wave having a large influence is different. Whether to provide 105 and 305 may be determined as appropriate for each device.

As for the number of the collars 105, the larger the number, the longer the propagation distance of the high-frequency electric field can be extended.
This is preferable because the node portion of the standing wave can be moved further. However, by making the node portion of the standing wave first appearing from the reflection end appear on the auxiliary substrate instead of on the substrate 102, the effect of uniformizing the processing characteristics appears relatively large. It is not always necessary to provide a large number. The number of the collars 105 may be appropriately determined depending on how uniform the film characteristics of the product need to be and how uniform the vacuum processing characteristics need to be.

In the vacuum processing apparatus of this embodiment, the frequency of the high-frequency power used to generate plasma is 50
In the case of not less than MHz and not more than 450 MHz, the effect of making the vacuum processing characteristics uniform can be obtained particularly remarkably. 50
The reason why the effect of uniformity of characteristics according to the present invention is relatively small below MHz is because the wavelength of the high-frequency power is long,
It is presumed that clear nodal portions and antinodes of the high-frequency electric field standing wave are not generated on the substrate 2, and that the high-frequency electric field standing wave on the base 102 has little effect on the uniformity of the vacuum processing characteristics. In addition, the reason why the effect of uniformity of the characteristics according to the present invention is relatively small at 450 MHz or higher is that the decomposition efficiency of the raw material gas is high and the power absorption rate in the reaction vessel 201 is large, The electric field is applied to the substrate 102,
Alternatively, before reaching the end of the auxiliary base combined with the base 102 and generating a reflected wave there, most of the reflected wave is attenuated, so that a prominent high-frequency electric field standing wave is not generated on the base 102. Inferred.

Further, in the vacuum processing apparatus of the present embodiment, when processing the substrate 102 having conductivity, the effect of making the vacuum processing characteristics uniform can be more remarkably obtained.
When the substrate 102 has conductivity, the high-frequency electric field is applied to the substrate 1
02 propagating on the surface, the high-frequency electric field standing wave
02 occurs on the surface. On the other hand, when the base 102 is made of a non-conductive material, the high-frequency electric field propagates on a conductive member such as the holder base 104 disposed on the back of the base 102, and the high-frequency electric field standing wave propagates on the conductive member. Occurs. For this reason, when the base 102 has conductivity, a high-frequency electric field standing wave is generated in a portion in contact with the plasma.
The non-uniformity of the vacuum processing characteristics becomes more remarkable. Even when the non-conductive substrate 102 is processed, the effect of uniforming the vacuum processing characteristics according to the present embodiment appears, but when the present embodiment is applied when the conductive substrate 102 is processed,
The effect is more pronounced.

Further, when the present embodiment is applied to an electrophotographic photosensitive member forming apparatus and an electrophotographic photosensitive member forming method, a particularly preferable effect can be obtained. According to the study of the present inventors, the high-frequency electric field standing wave on the auxiliary substrate or the auxiliary substrate and the substrate 102 as described above merely affects the electrical and optical characteristics of the manufactured photoreceptor. In addition to causing non-uniformities, it also causes a number of structural defects in the deposited film at the nodes. This structural defect is caused by dust in the reaction vessel 201, for example, a film fragment generated by peeling off a film attached to the wall of the reaction vessel 201 as a nucleus. It is not clear why such structural defects occur frequently at the nodes of high-frequency standing waves, but at the nodes,
It is speculated that the floating potential of the adjacent plasma will be different from that of other areas, and as a result, the potential of the dust or the amount of charge-up at the node will cause a situation where it is likely to be adsorbed on the substrate. Is done.

When an electrophotographic photosensitive member having such a structural defect is used, a white point or a black point which is not present in the original formed image is generated on the electrophotographic image.
The image quality is significantly reduced. The present embodiment, which can suppress the generation of the nodal portion of the high-frequency standing wave on the substrate 102 and reduce the structural defects, is an electrophotographic photoconductor forming apparatus and an electrophotographic photoconductor forming method. By applying to, a particularly preferable effect can be obtained.

[0060]

EXAMPLES Hereinafter, more specific examples according to the present invention will be described, but the present invention is not limited to these examples.

(Example 1) An apparatus having the structure shown in FIG. 2 was used, and the substrate 102 was 80 mm in diameter and 358 mm in length.
High frequency power supply 2 using a cylindrical aluminum cylinder
Twelve oscillation frequencies were set to 105 MHz, and deposited films were formed under the conditions shown in Table 1 to produce an electrophotographic photoreceptor.

[0062]

[Table 1]

As the auxiliary substrate, a holder cap 103 having a collar 105 shown in FIG. 1 was used, and both the holder base body 104 and the holder cap 103 were made of aluminum. As the holder cap 103, the protrusion amount A of the collar 105 and the interval B of the collar 105
(Refer to FIG. 1), five types of the collars 105 having different numbers were used.

The high-frequency electrode 210 is a stainless steel cylinder having a diameter of 20 mm, and has a structure in which the outside is covered with an alumina pipe. Such a high-frequency electrode 21
Four 0s are arranged at equal intervals on the same circumference so as to surround the base 102. A 30 pF capacitor (not shown) was provided at the tip of the high-frequency electrode 210 to reduce the high-frequency electric field standing wave ratio formed on the high-frequency electrode 210. The raw material gas supply pipe 213 has an inner diameter of 10 mm and an outer diameter of 13 mm
A gas pipe having a diameter of 1.2 mm was opened so that a raw material gas could be supplied to an alumina pipe whose end was sealed. Such a gas supply pipe 213
Are arranged at equal intervals on the same circumference so as to surround the base 102, at positions shifted 45 degrees in the circumferential direction with respect to the high-frequency electrode 210. The surface of the source gas supply pipe 213 was blasted so that the surface roughness became 20 μm with a ten-point average roughness Rz with a reference length of 2.5 mm.

The procedure for preparing the photoreceptor was as follows.
First, the holder body 104 and the holder cap 10
The substrate 102 held by No. 3 was set on the rotating shaft 207 in the reaction vessel 201. Thereafter, the inside of the reaction vessel 201 was exhausted through an exhaust port 214 by an exhaust device (not shown). Subsequently, the base 102 is moved to the motor 209 via the rotation shaft 207.
At a speed of 10 rpm. Further, 500 mL / min is introduced into the reaction vessel 201 from the gas supply pipe 213.
After supplying (normal) Ar, the pressure in the reaction vessel 201 was adjusted to 70 Pa by adjusting a pressure adjustment valve (not shown).
The substrate 102 is heated to 250
Heating and control each time, and the state was maintained for 2 hours.

Next, the supply of Ar was stopped, and the reaction vessel 20 was stopped.
After evacuating the inside of the device 1 through an exhaust port 214 by an exhaust device (not shown), a source gas used for forming a charge injection blocking layer shown in Table 1 was introduced through a gas supply pipe 213.

The flow rate of the raw material gas becomes the set flow rate.
After confirming that the pressure in the reaction vessel 201 was stabilized, the output value of the high-frequency power supply 212 was set to the power shown in Table 1,
High-frequency power was supplied to the high-frequency electrode 210 via the matching box 211. Thus, by the high-frequency power radiated from the high-frequency electrode 210 into the reaction vessel 201,
The source gas was excited and dissociated and deposited on the substrate 102 to form a charge injection blocking layer. After the film pressure of the deposited film reached a predetermined thickness, the supply of high-frequency power was stopped, and then the supply of source gas was stopped to complete the formation of the charge injection blocking layer. By repeating the same operation a plurality of times, a photoconductive layer and a surface layer were sequentially formed.

(Comparative Example 1) Next, a description will be given of Comparative Example 1 which was carried out for comparative evaluation of the deposition film formation of Example 1. In this comparative example, an apparatus having a configuration shown in FIG. 5 in which no brim was provided on the auxiliary substrate was used, and the other conditions were the same as in Example 1 under the conditions shown in Table 1 under the conditions shown in Table 1. A photoconductor comprising a conductive layer and a surface layer was prepared.

(Evaluation of Example 1) The A-Si photosensitive members produced in Example 1 and Comparative Example 1 were installed in a Canon copier NP-6750 (trade name) for testing, and a so-called “white” "Puchi" and "image density unevenness" were evaluated by the following evaluation methods to evaluate the characteristics of the photoreceptor. "White Petit" halftone chart FY9-904 manufactured by Canon Inc.
2 (trade name) was placed on a platen, and the number of white spots having a diameter of 0.1 mm or more in the same area of the copied image obtained by copying was counted, and the number was evaluated. That is, the smaller the numerical value, the better. At this time, the formed image was equally divided into eight evaluation regions in the axial direction of the used A-Si photoconductor, and each region was evaluated. "Image density unevenness" First, after adjusting the current of the main charger so that the dark area potential at the developing device position becomes a constant value, a predetermined white paper having a reflection density of 0.01 or less is used for the original, and the image at the developing device position is used. The image exposure light amount was adjusted so that the bright portion potential became a predetermined value.
Then, the halftone chart FY9-9042 manufactured by Canon Inc. was placed on a document table, and evaluated by the difference between the maximum value and the minimum value of the reflection density in the entire area on the copy image obtained by copying. That is, the smaller the numerical value, the better.

Table 2 shows the evaluation results.

[0071]

[Table 2]

In Table 2, the evaluation results are shown in Comparative Example 1.
In comparison with the result, the improvement (the reduction rate of the number of white spots and the reduction rate of the difference in reflection density) of Example 1 with respect to Comparative Example 1 was 30% or more ◎, 10% or more and 30% Less than ◎ ~
○ indicates less than 10%, and 悪 化 indicates deterioration. Also,
As for “white spots”, the comparison results are shown for each evaluation area. To indicate respective regions obtained by equally dividing the photosensitive member in the axial direction. A region near the end where the collar 105 is provided is a region.

A is the amount of protrusion of the collar 105, B is the distance between the collars 105, and L is the total length of the surface distance extended by providing the collar 105. Examples (1) to (5)
The results are shown for the case where auxiliary substrates having different numbers of A, B, L and collars 105 are used.

In Examples (3) and (4), significant improvement was observed between Example 1 and Comparative Example 1 in each of the items “white spots” and “image density unevenness”. In particular, regarding “white spots”, the improvement in the area of (1) was remarkable.

Examples (2) and (5) are described in Example 1.
And a clear improvement between Comparative Example 1 and Comparative Example 1. Example (2)
It is considered that the total extension L of the surface distance by the collar 105 is relatively short, and in the apparatus configuration of the present embodiment, the movement of the node of the high-frequency electric field standing wave is considered to be small. In Example (5), although the total extension L of the surface distance by the collar 105 is sufficiently long, the interval B between the collars 105 is relatively short and smaller than twice the sheath length of the plasma. It is considered that the effect of moving the knot portion became relatively small.

In the example (1), since the protrusion amount A of the collar 105 is smaller than the plasma sheath length, the total extension L of the surface distance by the collar 105 is the same as in the example (2). It is considered that only a small effect was obtained.

From the above, according to the present invention, “white petite”,
It was confirmed that an effect of reducing “image density unevenness” was obtained. Further, the electrophotographic image formed using the electrophotographic photosensitive member manufactured in Example 1 was an extremely good image with no image deletion or the like.

(Embodiment 2) In this embodiment, in addition to the holder cap 103 shown in FIG.
4 was used.
Other configurations were the same as in Example 1 to produce an electrophotographic photoconductor. The holder cap 103
The protrusion amount A is 30 mm, and the interval B between the collars 105 is 30 m.
The one provided with three m-shaped flanges 105 was used. Like the holder cap 103, the holder base 304
The protrusion amount A is 30 mm, and the interval between the flanges 305 is 30 mm.
The one provided with three flanges 305 was used.

(Comparative Example 2) Next, a description will be given of Comparative Example 2 which was carried out for comparative evaluation of the deposition film formation of Example 2. In this comparative example, a charge injection blocking layer, a photoconductive layer, and a surface layer were formed under the conditions shown in Table 1 in the same manner as in Example 2 except that an auxiliary base having no brim was used for the holder cap and the holder base. A photoreceptor was produced.

(Evaluation of Example 2) The a-Si photoreceptor prepared in Example 2 and the a-Si photoreceptor prepared in Comparative Example 2 were subjected to a Canon copier NP- 675
0 (trade name) to evaluate the characteristics of the photoreceptor. The evaluation was performed for “white spots” and “image density unevenness” in the same manner as the evaluation performed in Example 1. The evaluation results were evaluated based on the results of Comparative Example 2 in the same manner as in Example 1. evaluated. As for “white spots”, comparative evaluation was performed for the entire region of the photoconductor. Table 3 shows the evaluation results.

[0081]

[Table 3]

As can be seen from the results in Table 3, "white Petit",
In any of the items of “uneven image density”, clear improvement was observed in Example 2 as compared with Comparative Example 2. From this, it was confirmed that the effect of reducing “white spots” and “image density unevenness” was obtained according to the present invention. Further, the electrophotographic image formed using the electrophotographic photoreceptor prepared in Example 2 was an extremely good one with no image deletion or the like.

Example 3 In this example, six substrates 406 were placed in the reaction vessel 201 and vacuum processing was performed using the vacuum processing apparatus shown in FIG. For all six substrates 402, the protrusion amount A is 30 mm,
A holder cap 403 provided with three flanges 403 having an interval 03 of 30 mm was used.

As the high-frequency electrodes 410, six electrodes having the same configuration as in Example 1 were arranged on the same circumference at equal intervals outside the arrangement circle of the base 402. As the raw material gas supply pipe 413, an alumina pipe whose end is sealed has a diameter of 1.
A reactor provided with a 2 mm gas ejection port is placed in a reaction vessel 20.
One was placed at the center of one. An electrophotographic photoconductor was manufactured under the conditions shown in Table 4 in the same manner as in Example 1 except for the other components and the procedure for manufacturing the photoconductor.

[0085]

[Table 4]

(Comparative Example 3) Next, a description will be given of Comparative Example 3, which was carried out for comparative evaluation of the deposition film formation of Example 3. In this comparative example, Table 4 was used in the same manner as in Example 3 except that a holder cap having no brim was used.
A photoreceptor comprising a charge injection blocking layer, a photoconductive layer, and a surface layer was prepared under the conditions shown in (1).

(Evaluation of Example 3) The a-Si photoreceptor prepared in Example 3 and the a-Si photoreceptor prepared in Comparative Example 3 were subjected to a Canon copier NP- 675
0 (trade name) to evaluate the characteristics of the photoreceptor. The evaluation was performed for “white spots” and “image density unevenness” in the same manner as the evaluation performed in Example 1. The evaluation results were based on the results of Comparative Example 3 and the changes were evaluated in the same manner as in Example 1. Indicated. As for “white spots”, comparative evaluation was performed for the entire region of the photoconductor. Table 5 shows the evaluation results.

[0088]

[Table 5]

As can be seen from the results in Table 5, "white petite",
In any of the items of "uneven image density", clear improvement was observed in Example 3 as compared with Comparative Example 3. From this, it was confirmed that the effect of reducing “white spots” and “image density unevenness” was obtained according to the present invention. Further, the electrophotographic image formed using the electrophotographic photoreceptor produced in Example 4 was an extremely good one with no image deletion or the like.

[0090]

As described above, according to the present invention, in a vacuum processing apparatus and a vacuum processing method for performing vacuum processing on a substrate using plasma generated by high-frequency power,
By providing an auxiliary base having a portion connected to the base so as to extend the end of the base, a protrusion extending from the end toward the processing surface of the base so as to protrude from the surface, By changing the phase of the high-frequency electric field standing wave generated on the substrate, the uniformity of the vacuum processing characteristics can be improved. This can improve product quality,
In addition, when a plurality of products are manufactured in one reaction vessel, the yield rate can be improved and the production cost can be reduced.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view of a substrate and an auxiliary substrate used in a vacuum processing apparatus of the present invention.

FIG. 2 is a schematic sectional view showing an example of a vacuum processing apparatus according to the embodiment of the present invention.

FIG. 3 is a schematic sectional view showing a vacuum processing apparatus according to a modification of FIG. 2;

FIG. 4 is a schematic sectional view showing a vacuum processing apparatus according to another modification of FIG. 2;

FIG. 5 is a schematic sectional view showing an example of a conventional vacuum processing apparatus.

[Explanation of symbols]

 201, 501 Reaction vessel 102, 302, 402, 502 Base 103, 303, 403, 503 Holder cap 104, 304, 404, 504 Holder base 105, 205, 405 collar 206, 405, 506 Heating element 207, 407, 507 rotation Shaft 208, 408, 508 Reduction gear 209, 409, 509 Motor 210, 410, 510 High frequency electrode 211, 511 Matching box 212, 512 High frequency power supply 213, 413, 513 Source gas supply pipe 214, 514 Exhaust port

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Kazutaka Akiyama 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (72) Inventor Hitoshi Hosoi 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon F term in the company (reference) 2H068 EA24 4K030 AA06 AA09 AA17 BA30 BB12 CA02 FA03 JA18 KA05 KA45 LA17 5F045 AA08 AB04 AC01 AD06 AD07 AE19 BB08 CA16 DP25 DP28 EB02 EB03 EH04 EH15 EH19 EM02

Claims (10)

[Claims] 1. A reaction vessel in which the inside can be decompressed and a substrate is disposed therein, an exhaust means for decompressing the inside of the reaction vessel, and a high-frequency power supply means for supplying high-frequency power to the inside of the reaction vessel. A vacuum processing apparatus for performing vacuum processing on a processing surface of the substrate by using plasma generated by the high-frequency power, comprising a conductive material, extending the processing surface of the substrate in at least one direction. An auxiliary substrate having a portion connected to the substrate so that the auxiliary substrate extends from the portion connected to extend the processing surface of the substrate,
A vacuum processing apparatus having a protruding portion formed to protrude outward. 2. A vacuum processing apparatus for performing a process on an outer peripheral surface of a cylindrical substrate, wherein a portion where the auxiliary substrate is connected so as to extend at least one axial end of the substrate. The vacuum processing apparatus according to claim 1, wherein the protrusion has a flange-like shape protruding radially outward. 3. The protruding length of the protruding portion is longer than the sheath length of the plasma.
Or the vacuum processing apparatus according to 2. 4. A plurality of protrusions are provided,
The vacuum processing apparatus according to any one of claims 1 to 3, wherein an interval between the protruding portions is longer than a distance obtained by doubling a sheath length of plasma. 5. The apparatus according to claim 1, wherein the frequency of the high-frequency power is not less than 50 MHz and not more than 450 MHz.
The vacuum processing apparatus according to any one of items 1 to 4, wherein 6. A vacuum processing apparatus for processing the substrate made of a conductive material, wherein a high-frequency electric field generated in the vicinity of the processing surface of the substrate by the high-frequency power is applied to the processing surface of the auxiliary substrate. The vacuum processing apparatus according to any one of claims 1 to 5, wherein the base and the auxiliary base are connected so as to be continuously transmitted to a surface connected to the base. 7. A source gas introducing means for introducing a source gas into the reaction vessel, wherein the source gas is excited and dissociated by the high-frequency power and deposited on the substrate to form a deposited film. 7. The vacuum processing apparatus according to any one of 1 to 6. 8. The vacuum processing apparatus according to claim 7, wherein an electrophotographic photosensitive member on which the deposited film is laminated is manufactured. 9. A step of arranging a substrate in a reaction vessel capable of depressurizing the inside, a step of exhausting the inside of the reaction vessel to reduce the pressure, and a step of supplying high-frequency power to the inside of the reaction vessel to generate plasma. And a vacuum processing method for performing vacuum processing on the processing surface of the substrate using the plasma, wherein the protruding portion includes a protruding portion made of a conductive material and formed to protrude outward. A vacuum processing method, comprising: performing a vacuum process on an auxiliary substrate having a forming surface, wherein the auxiliary substrate is connected to the substrate so that the protruding portion forming surface extends the processing surface of the substrate in at least one direction. 10. In the plasma generating step, a standing wave of a high-frequency electric field generated in the vicinity of a portion connected to the processing surface of the substrate and the processing surface of the auxiliary substrate by the high-frequency electric power, The vacuum processing method according to claim 9, wherein a node portion closest to an end is located on the auxiliary base.