JP2003163353A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JP2003163353A
JP2003163353A JP2001363631A JP2001363631A JP2003163353A JP 2003163353 A JP2003163353 A JP 2003163353A JP 2001363631 A JP2001363631 A JP 2001363631A JP 2001363631 A JP2001363631 A JP 2001363631A JP 2003163353 A JP2003163353 A JP 2003163353A
Authority
JP
Japan
Prior art keywords
diffusion layer
layer
type
channel
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001363631A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003163353A5 (2
Inventor
Osamu Otani
修 大谷
Kazuyuki Umetsu
和之 梅津
Akira Koshimizu
亮 小清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2001363631A priority Critical patent/JP2003163353A/ja
Publication of JP2003163353A publication Critical patent/JP2003163353A/ja
Publication of JP2003163353A5 publication Critical patent/JP2003163353A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)
JP2001363631A 2001-11-29 2001-11-29 半導体装置 Pending JP2003163353A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001363631A JP2003163353A (ja) 2001-11-29 2001-11-29 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001363631A JP2003163353A (ja) 2001-11-29 2001-11-29 半導体装置

Publications (2)

Publication Number Publication Date
JP2003163353A true JP2003163353A (ja) 2003-06-06
JP2003163353A5 JP2003163353A5 (2) 2005-10-27

Family

ID=19173942

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001363631A Pending JP2003163353A (ja) 2001-11-29 2001-11-29 半導体装置

Country Status (1)

Country Link
JP (1) JP2003163353A (2)

Similar Documents

Publication Publication Date Title
CN100388504C (zh) 具有隔离结构的高电压ldmos晶体管
JP2781504B2 (ja) 改良されたブレークダウン電圧特性を有する半導体装置
CN100423289C (zh) 半导体部件及其制造方法
US9024376B2 (en) Vertical transistor with dielectrically-isolated work-function metal electrodes surrounding the semiconductor pillar
US8237195B2 (en) Power MOSFET having a strained channel in a semiconductor heterostructure on metal substrate
EP3076435B1 (en) Semiconductor device
JP2001015741A (ja) 電界効果トランジスタ
JPS63266882A (ja) 縦型絶縁ゲ−ト電界効果トランジスタ
JP4761691B2 (ja) 半導体装置
US6982461B2 (en) Lateral FET structure with improved blocking voltage and on resistance performance and method
US7323747B2 (en) Lateral semiconductor device
US9825168B2 (en) Semiconductor device capable of high-voltage operation
JP2003163353A (ja) 半導体装置
JP2689874B2 (ja) 高耐圧mosトランジスタ
JP4423461B2 (ja) 半導体装置
JP3137840B2 (ja) 半導体装置
JP2008205494A (ja) 半導体装置
JPH10242454A (ja) 半導体装置
JP5092202B2 (ja) 半導体装置
WO2014174741A1 (ja) 半導体装置
CN216871980U (zh) 金属-氧化物半导体场效应晶体管结构
JP2002319681A (ja) 半導体装置
JPH09260503A (ja) 半導体装置
JP2006344817A (ja) 半導体装置
JP3130645B2 (ja) 高耐圧mosトランジスタ

Legal Events

Date Code Title Description
A621 Written request for application examination

Effective date: 20041102

Free format text: JAPANESE INTERMEDIATE CODE: A621

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050829

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060907

A131 Notification of reasons for refusal

Effective date: 20080304

Free format text: JAPANESE INTERMEDIATE CODE: A131

A02 Decision of refusal

Effective date: 20080701

Free format text: JAPANESE INTERMEDIATE CODE: A02