JP2003174177A - Solar battery - Google Patents
Solar batteryInfo
- Publication number
- JP2003174177A JP2003174177A JP2001371607A JP2001371607A JP2003174177A JP 2003174177 A JP2003174177 A JP 2003174177A JP 2001371607 A JP2001371607 A JP 2001371607A JP 2001371607 A JP2001371607 A JP 2001371607A JP 2003174177 A JP2003174177 A JP 2003174177A
- Authority
- JP
- Japan
- Prior art keywords
- film
- metal electrode
- electrode film
- solar cell
- comparative example
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 59
- 239000002184 metal Substances 0.000 claims abstract description 59
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 14
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 32
- 239000010408 film Substances 0.000 description 91
- 230000000052 comparative effect Effects 0.000 description 32
- 238000010248 power generation Methods 0.000 description 26
- 238000010586 diagram Methods 0.000 description 16
- 239000011521 glass Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ｐｉｎ型又はｎｉ
ｐ型構造の複数のセルを1つ又は多段に積層した太陽電
池に関する。TECHNICAL FIELD The present invention relates to a pin type or ni type
The present invention relates to a solar cell in which a plurality of cells having a p-type structure are laminated in one or in multiple stages.
【０００２】[0002]
【従来の技術】従来、薄膜型シリコン太陽電池として
は、例えば図２に示すものが知られている。図中の付番
１は、厚みが約１ｍｍのガラス基板を示す。この基板１
上には、膜厚０．１〜１．０μｍの透明導電膜２を介し
て第１のセル３、第２のセル４、膜厚０．０１〜１．０
μｍの酸化物膜５及び膜厚０．３〜０．６μｍの金属電
極膜６が順次形成されている。ここで、第１のセル３
は、ｐ型のアモルファスＳｉ（ａ−Ｓｉ）発電膜３ａ
と、ｉ型のａ−Ｓｉ発電膜３ｂと、ｎ型のａ−Ｓｉ発電
膜３ｃとから構成されている。また、第２のセル４は、
ｐ型の非晶質Ｓｉ発電膜４ａと、ｉ型の非晶質Ｓｉ発電
膜４ｂと、ｎ型の非晶質Ｓｉ発電膜４ｃとから構成され
ている。ここで、前記各発電膜の膜厚は０．００５〜
０．５μｍである。なお、発電膜として微結晶シリコン
を用いた場合の膜厚は、０．００５〜５．０μｍであ
る。2. Description of the Related Art Conventionally, as a thin film type silicon solar cell, for example, one shown in FIG. 2 is known. Number 1 in the figure indicates a glass substrate having a thickness of about 1 mm. This board 1
A first cell 3, a second cell 4 and a film thickness of 0.01 to 1.0 are formed on the upper surface of the transparent conductive film 2 having a film thickness of 0.1 to 1.0 μm.
A μm oxide film 5 and a metal electrode film 6 having a film thickness of 0.3 to 0.6 μm are sequentially formed. Where the first cell 3
Is a p-type amorphous Si (a-Si) power generation film 3a
And an i-type a-Si power generation film 3b and an n-type a-Si power generation film 3c. Also, the second cell 4 is
It is composed of a p-type amorphous Si power generation film 4a, an i-type amorphous Si power generation film 4b, and an n-type amorphous Si power generation film 4c. Here, the thickness of each power generation film is 0.005 to
It is 0.5 μm. The film thickness when microcrystalline silicon is used as the power generation film is 0.005 to 5.0 μm.
【０００３】こうした構成の太陽電池において、太陽光
はガラス基板１側から入射して透明電極膜２を透過して
各発電膜に入射する。太陽光は、発電膜３ａに吸収され
て、透明導電膜２と非晶質Ｓｉ発電膜４ａとの間に起電
力が発生し、電力を外部に取り出すことができる。とこ
ろで、こうした太陽電池において、電池の発電効率を向
上させるために、例えば前記発電膜３ａ〜３ｃをａ−Ｓ
ｉ、前記発電膜４ａ〜４ｃを結晶質Ｓｉで構成するよう
に、前記発電膜３ａ〜３ｃ、４ａ〜４ｃを夫々光吸収帯
域の異なる材質とすることで入射光を有効に利用するこ
とが広く行われており、タンデム型太陽電池と呼ばれて
いる。In the solar cell having such a structure, sunlight enters from the glass substrate 1 side, passes through the transparent electrode film 2 and enters each power generation film. The sunlight is absorbed by the power generation film 3a, an electromotive force is generated between the transparent conductive film 2 and the amorphous Si power generation film 4a, and the power can be extracted to the outside. By the way, in such a solar cell, in order to improve the power generation efficiency of the cell, for example, the power generation films 3a to 3c are formed by a-S
i, the incident power is widely used effectively by making the power generation films 3a to 3c and 4a to 4c different from each other so that the power generation films 4a to 4c are made of crystalline Si. It is carried out and is called a tandem solar cell.
【０００４】しかし、従来のタンデム型太陽電池では、
十分な発電効率が得られないという課題があった。However, in the conventional tandem type solar cell,
There was a problem that sufficient power generation efficiency could not be obtained.
【０００５】[0005]
【発明が解決しようとする課題】本発明は上記事情を考
慮してなされたもので、反射用金属膜の波長６００ｎｍ
〜１２００ｎｍの入射光に対する反射率は８０％以上と
することにより、高い変換効率を有する太陽電池を提供
することを目的とする。SUMMARY OF THE INVENTION The present invention has been made in consideration of the above circumstances, and has a wavelength of a reflection metal film of 600 nm.
It is an object of the present invention to provide a solar cell having high conversion efficiency by setting the reflectance for incident light of ˜1200 nm to 80% or more.
【０００６】[0006]
【課題を解決するための手段】本発明は、支持体上に透
明電極膜を介してアモルファスＳｉ又は結晶質Ｓｉより
なるｐｉｎ型又はｎｉｐ型構造の複数のセルを1つ又は
多段に積層し、更に前記セル上に酸化物層を介して形成
された反射用金属膜を形成した太陽電池において、前記
反射用金属膜の波長６００ｎｍ〜１２００ｎｍの入射光
に対する反射率は８０％以上であることを特徴とする太
陽電池である。According to the present invention, a plurality of cells having a pin type or nip type structure made of amorphous Si or crystalline Si is laminated on a support through a transparent electrode film in one or multiple stages, Further, in the solar cell in which a reflective metal film formed via an oxide layer is formed on the cell, the reflective metal film has a reflectance of 80% or more for incident light having a wavelength of 600 nm to 1200 nm. It is a solar cell.
【０００７】本発明において、前記反射用金属膜は、ベ
ース圧力が４×１０-４Ｐａ以下の減圧雰囲気下で形成
されることが好ましい。この理由は、ベース圧力が４×
１０ -４Ｐａを超えると、膜形成時に生じた脱ガス（真
空容器壁面からの吸着気体分子がはなれたもの）が反射
用金属膜に入り、反射用金属膜の反射率を下げ、燃料電
池の変換効率を低下させるからである。In the present invention, the reflecting metal film is a base film.
Source pressure is 4 × 10-4Formed in a reduced pressure atmosphere of Pa or less
Preferably. The reason for this is that the base pressure is 4 ×
10 -4If it exceeds Pa, degassing (true
Reflection of adsorbed gas molecules from the wall surface of the empty container)
Enter the metal film for use in
This is because it reduces the conversion efficiency of the pond.
【０００８】また、前記反射用金属膜の膜厚は０．２〜
２μｍであることが好ましい。この理由は、膜厚が０．
２μｍ未満の場合、支持体側から入射した光が反射用金
属膜側から通り抜けるおそれがあり、膜厚が２μｍを超
えるとコスト高となるからである。更に、前記反射用金
属膜の材質としては、例えばＡｇ、Ｃｕ等の金属が挙げ
られる。これらの金属は真空蒸着法、スパッタ法等によ
り形成することができる。The thickness of the reflection metal film is 0.2 to
It is preferably 2 μm. The reason for this is that the film thickness is 0.
If the thickness is less than 2 μm, the light incident from the support side may pass through from the reflective metal film side, and if the thickness exceeds 2 μm, the cost becomes high. Furthermore, examples of the material of the reflection metal film include metals such as Ag and Cu. These metals can be formed by a vacuum vapor deposition method, a sputtering method, or the like.
【０００９】[0009]
【発明の実施の形態】図１は、本発明の各実施例に係る
タンデム型太陽電池について説明する。
（実施例１）図１を参照する。図中の付番１１は、厚み
が約１ｍｍのガラス基板（支持体）を示す。この基板１
１上には、ＳｎＯ２等からなる膜厚０．６〜１．０μｍ
の透明電極膜１２を介して第１のセル１３が形成されて
いる。ここで、第１のセル１３は、ｐ型のａ−Ｓｉ発電
膜１３ａと、ｉ型のａ−Ｓｉ発電膜１３ｂと、ｎ型のａ
−Ｓｉ発電膜１３ｃとから構成されている。ここで、前
記各発電膜の膜厚は０．００５〜０．５μｍである。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 illustrates a tandem solar cell according to each embodiment of the present invention. Example 1 Reference is made to FIG. Reference number 11 in the figure indicates a glass substrate (support) having a thickness of about 1 mm. This board 1
On top of this, a film thickness of 0.6 to 1.0 μm made of SnO 2 or the like is formed.
The first cell 13 is formed through the transparent electrode film 12 of FIG. Here, the first cell 13 includes a p-type a-Si power generation film 13a, an i-type a-Si power generation film 13b, and an n-type a-power generation film 13b.
-Si power generation film 13c. Here, the film thickness of each of the power generation films is 0.005 to 0.5 μm.
【００１０】前記第１のセル１３上には、第２のセル１
４、膜厚０．０１〜１．０μｍのＺｎＯからなる酸化物
層１５及び膜厚０．０２〜２μｍのＡｇからなる金属電
極膜１６が順次形成されている。ここで、第２のセル１
４は、ｐ型の結晶質Ｓｉ発電膜１４ａと、ｉ型の結晶質
Ｓｉ発電膜１４ｂと、ｎ型の結晶質Ｓｉ発電膜１４ｃと
から構成されている。前記各発電膜の膜厚は０．００５
〜０．５μｍである。また、前記金属電極膜１６は、ベ
ース圧力４×１０−４Ｐａ以下の条件で真空蒸着法によ
り形成した。また、金属電極膜１６の波長６００ｎｍ〜
１２００ｎｍの入射光に対する反射率は８０％以上であ
る。A second cell 1 is provided on the first cell 13.
4. An oxide layer 15 made of ZnO having a film thickness of 0.01 to 1.0 μm and a metal electrode film 16 made of Ag having a film thickness of 0.02 to 2 μm are sequentially formed. Where the second cell 1
4 is composed of a p-type crystalline Si power generation film 14a, an i-type crystalline Si power generation film 14b, and an n-type crystalline Si power generation film 14c. The thickness of each power generation film is 0.005
Is 0.5 μm. Further, the metal electrode film 16 was formed by a vacuum vapor deposition method under the condition of a base pressure of 4 × 10 −4 Pa or less. In addition, the wavelength of the metal electrode film 16 is 600 nm
The reflectance for incident light of 1200 nm is 80% or more.
【００１１】上記実施例１に係るタンデム型太陽電池
は、ガラス基板１１上に透明電極膜１２を介してアモル
ファスＳｉよりなるｐｉｎ型構造の第１のセル１３、結
晶質Ｓｉよりなるｐｉｎ型構造の第２のセル１４を多段
に積層し、更に前記セル１４上に酸化物層１５を介して
金属電極膜１６を形成し、かつ金属電極層１６の波長６
００ｎｍ〜１２００ｎｍの入射光に対する反射率は８０
％以上である構成となっている。従って、実施例１によ
れば、ベース圧力１×１０−３Ｐａ以下の条件で真空蒸
着法によりＡｇからなる金属電極膜を形成した従来と比
べ、変換効率が高い太陽電池を得ることができる。The tandem solar cell according to Example 1 has a first cell 13 having a pin type structure made of amorphous Si and a pin type structure made of crystalline Si on a glass substrate 11 with a transparent electrode film 12 interposed therebetween. The second cells 14 are stacked in multiple stages, and the metal electrode film 16 is formed on the cells 14 with the oxide layer 15 interposed therebetween.
The reflectance for incident light of 00 nm to 1200 nm is 80.
% Or more. Therefore, according to Example 1, a solar cell having higher conversion efficiency can be obtained as compared with the conventional case in which the metal electrode film made of Ag is formed by the vacuum deposition method under the condition of the base pressure of 1 × 10 −3 Pa or less.
【００１２】下記表１は、上記実施例１に係るサンプル
Ｎｏ１〜８及び比較例１において、ベース圧力を種々変
えて真空蒸着法により金属電極膜を形成した場合の例を
示す。サンプルＮｏ１〜８の太陽電池及び比較例に係る
太陽電池について、変換効率を求めたところ、サンプル
Ｎｏ１〜８の場合の方が比較例１に比べて高い変換効率
が得られることが確認できた。また、サンプルＮｏ１〜
８及び比較例１において、入射光波長を変えて金属電極
膜の反射率を求めたところ、下記表２に示すようにサン
プルＮｏ１〜８においては金属電極膜の反射率は全て８
０％以上であることが確認できた。なお、反射率の評価
は、ソーダガラス基板上に金属薄膜を蒸着して計測し
た。Table 1 below shows examples in which the metal electrode film was formed by the vacuum deposition method with various base pressures in Sample Nos. 1 to 8 according to Example 1 and Comparative Example 1. When the conversion efficiencies of the solar cells of Sample Nos. 1 to 8 and the solar cells of Comparative Examples were determined, it was confirmed that the conversion efficiencies of Sample Nos. 1 to 8 were higher than those of Comparative Example 1. In addition, sample No1
8 and Comparative Example 1, the reflectance of the metal electrode film was determined by changing the incident light wavelength. As shown in Table 2 below, the reflectance of the metal electrode film was all 8 in Samples Nos. 1 to 8.
It was confirmed to be 0% or more. The reflectance was measured by depositing a metal thin film on a soda glass substrate.
【００１３】[0013]
【表１】 [Table 1]
【００１４】[0014]
【表２】 [Table 2]
【００１５】図３は、金属電極膜の厚みが０．５μｍの
場合のサンプルＮｏ２〜６及び比較例１におけるベース
圧力（Ｐａ）と規格化変換効率との関係をプロットした
特性図を示す。図４は、ベース圧力が２×１０−４Ｐａ
の場合のサンプルＮｏ１，５，７，８及び比較例１にお
ける金属電極膜の膜厚（μｍ）と規格化変換効率との関
係をプロットした特性図を示す。FIG. 3 is a characteristic diagram in which the relation between the base pressure (Pa) and the normalized conversion efficiency in Sample Nos. 2 to 6 and Comparative Example 1 when the thickness of the metal electrode film is 0.5 μm is plotted. In FIG. 4, the base pressure is 2 × 10 −4 Pa.
7 is a characteristic diagram in which the relationship between the film thickness (μm) of the metal electrode film and the normalized conversion efficiency in Sample Nos. 1, 5, 7, 8 and Comparative Example 1 in the case of is plotted.
【００１６】（実施例２）本実施例２は、実施例１と比
べ、金属電極膜１６をベース圧力４×１０−４Ｐａ以下
の減圧雰囲気下でスパッタ法によりＡｇを堆積する点を
特徴とし、他は実施例１と同様な構成となっている。(Embodiment 2) Compared with Embodiment 1, Embodiment 2 is characterized in that Ag is deposited on the metal electrode film 16 by a sputtering method under a reduced pressure atmosphere having a base pressure of 4 × 10 −4 Pa or less. The other configurations are similar to those of the first embodiment.
【００１７】下記表３は、上記実施例２に係るサンプル
Ｎｏ９〜１６及び比較例２において、ベース圧力を種々
変えてスパッタ法により金属電極膜を形成した場合の例
を示す。サンプルＮｏ９〜１６の太陽電池及び比較例に
係る太陽電池について、変換効率を求めたところ、サン
プルＮｏ９〜１６の場合の方が比較例２に比べて高い変
換効率が得られることが確認できた。また、サンプルＮ
ｏ９〜１６及び比較例２において、入射光波長を変えて
金属電極膜の反射率を求めたところ、下記表４に示すよ
うにサンプルＮｏ９〜１６においては金属電極膜の反射
率は全て８０％以上であることが確認できた。なお、反
射率の評価は、ソーダガラス基板上に金属薄膜を蒸着し
て計測した。Table 3 below shows an example of forming the metal electrode film by the sputtering method with various base pressures in the samples Nos. 9 to 16 according to the second embodiment and the comparative example 2. The conversion efficiencies of the solar cells of Sample Nos. 9 to 16 and the solar cells of Comparative Examples were determined, and it was confirmed that the conversion efficiencies of Samples No. 9 to 16 were higher than those of Comparative Example 2. Also, sample N
In Examples 9 to 16 and Comparative Example 2, the reflectance of the metal electrode film was determined by changing the incident light wavelength. As shown in Table 4 below, in Samples Nos. 9 to 16, the reflectance of the metal electrode film was 80% or more. It was confirmed that The reflectance was measured by depositing a metal thin film on a soda glass substrate.
【００１８】[0018]
【表３】 [Table 3]
【００１９】[0019]
【表４】 [Table 4]
【００２０】図５は、金属電極膜の厚みが０．５μｍの
場合のサンプルＮｏ１０〜１４及び比較例２におけるベ
ース圧力（Ｐａ）と規格化変換効率との関係をプロット
した特性図を示す。図６は、ベース圧力が２×１０−４
Ｐａの場合のサンプルＮｏ９，１３，１５，１６及び比
較例２における金属電極膜の膜厚（μｍ）と規格化変換
効率との関係をプロットした特性図を示す。実施例２に
よれば、実施例１と同様、高い変換効率が得られる。FIG. 5 is a characteristic diagram in which the relationship between the base pressure (Pa) and the normalized conversion efficiency in Sample Nos. 10 to 14 and Comparative Example 2 when the thickness of the metal electrode film is 0.5 μm is plotted. In FIG. 6, the base pressure is 2 × 10 −4.
The characteristic diagram which plotted the relationship between the film thickness (micrometer) of the metal electrode film in Sample No. 9, 13, 15, 16 in the case of Pa, and the comparative example 2 and the normalized conversion efficiency is shown. According to the second embodiment, similar to the first embodiment, high conversion efficiency can be obtained.
【００２１】（実施例３）本実施例３は、実施例１と比
べ、金属電極膜１６の材質をＣｕとする点を特徴とし、
他は実施例１と同様な構成となっている。(Third Embodiment) This third embodiment is characterized in that the material of the metal electrode film 16 is Cu, as compared with the first embodiment,
Others have the same configuration as the first embodiment.
【００２２】下記表５は、上記実施例３に係るサンプル
Ｎｏ１７〜２４及び比較例３において、ベース圧力を種
々変えて真空蒸着法により金属電極膜を形成した場合の
例を示す。サンプルＮｏ１７〜２４の太陽電池及び比較
例に係る太陽電池について、変換効率を求めたところ、
サンプルＮｏ１７〜２４の場合の方が比較例３に比べて
高い変換効率が得られることが確認できた。また、サン
プルＮｏ１７〜２４及び比較例３において、入射光波長
を変えて反射率を求めたところ、下記表６に示すように
サンプルＮｏ１７〜２４においてはＣｕからなる金属電
極膜の反射率は全て８０％以上であることが確認でき
た。なお、反射率の評価は、ソーダガラス基板上に金属
薄膜を蒸着して計測した。Table 5 below shows examples of the sample Nos. 17 to 24 according to Example 3 and Comparative Example 3 in which the metal electrode film was formed by the vacuum deposition method with various base pressures. When conversion efficiencies were obtained for the solar cells of Sample Nos. 17 to 24 and the solar cells according to the comparative examples,
It was confirmed that Samples Nos. 17 to 24 had higher conversion efficiency than Comparative Example 3. Further, when the reflectance was obtained by changing the incident light wavelength in Samples Nos. 17 to 24 and Comparative Example 3, the reflectances of the metal electrode films made of Cu were all 80 in Samples Nos. It was confirmed that it was more than%. The reflectance was measured by depositing a metal thin film on a soda glass substrate.
【００２３】[0023]
【表５】 [Table 5]
【００２４】[0024]
【表６】 [Table 6]
【００２５】図７は、金属電極膜の厚みが０．５μｍの
場合のサンプルＮｏ１８〜２２及び比較例３におけるベ
ース圧力（Ｐａ）と規格化変換効率との関係をプロット
した特性図を示す。図８は、ベース圧力が２×１０−４
Ｐａの場合のサンプルＮｏ１７，２１，２３，２４及び
比較例３における金属電極膜の膜厚（μｍ）と規格化変
換効率との関係をプロットした特性図を示す。FIG. 7 is a characteristic diagram in which the relationship between the base pressure (Pa) and the normalized conversion efficiency in Sample Nos. 18 to 22 and Comparative Example 3 when the thickness of the metal electrode film is 0.5 μm is plotted. In FIG. 8, the base pressure is 2 × 10 −4.
The characteristic diagram which plotted the relationship between the film thickness (micrometer) of the metal electrode film in sample No. 17, 21, 23, 24 in the case of Pa, and the comparative example 3 and the normalized conversion efficiency is shown.
【００２６】実施例３によれば、実施例１と同様、高い
変換効率が得られる。According to the third embodiment, similar to the first embodiment, high conversion efficiency can be obtained.
【００２７】（実施例４）本実施例４は、実施例１と比
べ、金属電極膜１６をベース圧力４×１０−４Ｐａ以下
の減圧雰囲気下でスパッタ法によりＣｕを堆積する点を
特徴とし、他は実施例１と同様な構成となっている。(Embodiment 4) Compared with Embodiment 1, Embodiment 4 is characterized in that Cu is deposited on the metal electrode film 16 by a sputtering method under a reduced pressure atmosphere having a base pressure of 4 × 10 −4 Pa or less. The other configurations are similar to those of the first embodiment.
【００２８】下記表７は、上記実施例４に係るサンプル
Ｎｏ２５〜３２及び比較例４において、ベース圧力を種
々変えてスパッタ法により金属電極膜を形成した場合の
例を示す。サンプルＮｏ２５〜３２の太陽電池及び比較
例に係る太陽電池について、変換効率を求めたところ、
サンプルＮｏ２５〜３２の場合の方が比較例４に比べて
高い変換効率が得られることが確認できた。また、サン
プルＮｏ２５〜３２及び比較例４において、入射光波長
を変えて金属電極膜の反射率を求めたところ、下記表８
に示すようにサンプルＮｏ２５〜３２においては金属電
極膜の反射率は全て８０％以上であることが確認でき
た。なお、反射率の評価は、ソーダガラス基板上に金属
薄膜を蒸着して計測した。Table 7 below shows examples of the sample Nos. 25 to 32 according to Example 4 and Comparative Example 4 in which the metal electrode film was formed by the sputtering method with various base pressures. When conversion efficiencies were determined for the solar cells of Sample Nos. 25 to 32 and the solar cell according to the comparative example,
It was confirmed that Samples Nos. 25 to 32 had higher conversion efficiency than Comparative Example 4. In addition, in Sample Nos. 25 to 32 and Comparative Example 4, the reflectance of the metal electrode film was obtained by changing the incident light wavelength, and Table 8 below was obtained.
It was confirmed that in Sample Nos. 25 to 32, the reflectance of the metal electrode film was 80% or more as shown in FIG. The reflectance was measured by depositing a metal thin film on a soda glass substrate.
【００２９】[0029]
【表７】 [Table 7]
【００３０】[0030]
【表８】 [Table 8]
【００３１】図９は、金属電極膜の厚みが０．５μｍの
場合のサンプルＮｏ２６〜３０及び比較例３におけるベ
ース圧力（Ｐａ）と規格化変換効率との関係をプロット
した特性図を示す。図１０は、ベース圧力が２×１０
−４Ｐａの場合のサンプルＮｏ２５，２９，３１，３２
及び比較例４における金属電極膜の膜厚（μｍ）と規格
化変換効率との関係をプロットした特性図を示す。実施
例４によれば、実施例１と同様、高い変換効率が得られ
る。FIG. 9 is a characteristic diagram in which the relationship between the base pressure (Pa) and the normalized conversion efficiency in Sample Nos. 26 to 30 and Comparative Example 3 when the thickness of the metal electrode film is 0.5 μm is plotted. In FIG. 10, the base pressure is 2 × 10.
Sample Nos. 25, 29, 31, 32 for -4 Pa
6 is a characteristic diagram plotting the relationship between the film thickness (μm) of the metal electrode film and the normalized conversion efficiency in Comparative Example 4. According to the fourth embodiment, similar to the first embodiment, high conversion efficiency can be obtained.
【００３２】[0032]
【発明の効果】以上詳述したように本発明によれば、反
射用金属膜の波長６００ｎｍ〜１２００ｎｍの入射光に
対する反射率は８０％以上とすることにより、高い変換
効率を有する太陽電池を提供できる。As described in detail above, according to the present invention, the reflectance of the reflection metal film for incident light having a wavelength of 600 nm to 1200 nm is 80% or more, thereby providing a solar cell having high conversion efficiency. it can.
【図１】本発明の実施例１に係るタンデム型太陽電池の
断面図。FIG. 1 is a cross-sectional view of a tandem solar cell according to a first embodiment of the present invention.
【図２】従来に係るタンデム型太陽電池の断面図。FIG. 2 is a cross-sectional view of a conventional tandem solar cell.
【図３】実施例１及び比較例１に係るタンデム型太陽電
池において、金属電極膜の膜厚が０．５μｍの場合のベ
ース圧力と規格化変換効率との関係を示す特性図。FIG. 3 is a characteristic diagram showing the relationship between the base pressure and the normalized conversion efficiency when the metal electrode film has a thickness of 0.5 μm in the tandem solar cells according to Example 1 and Comparative Example 1.
【図４】実施例１及び比較例１に係るタンデム型太陽電
池において、ベース圧力が２×１０−４Ｐａの場合の金
属電極膜膜厚と規格化変換効率との関係を示す特性図。FIG. 4 is a characteristic diagram showing the relationship between the metal electrode film thickness and the normalized conversion efficiency when the base pressure is 2 × 10 −4 Pa in the tandem solar cells according to Example 1 and Comparative Example 1.
【図５】実施例２及び比較例２に係るタンデム型太陽電
池において、金属電極膜の膜厚が０．５μｍの場合のベ
ース圧力と規格化変換効率との関係を示す特性図。FIG. 5 is a characteristic diagram showing the relationship between the base pressure and the normalized conversion efficiency when the metal electrode film has a thickness of 0.5 μm in the tandem solar cells according to Example 2 and Comparative Example 2.
【図６】実施例２及び比較例２に係るタンデム型太陽電
池において、ベース圧力が２×１０−４Ｐａの場合の金
属電極膜膜厚と規格化変換効率との関係を示す特性図。FIG. 6 is a characteristic diagram showing the relationship between the metal electrode film thickness and the normalized conversion efficiency when the base pressure is 2 × 10 −4 Pa in the tandem solar cells according to Example 2 and Comparative Example 2.
【図７】実施例３及び比較例３に係るタンデム型太陽電
池において、金属電極膜の膜厚が０．５μｍの場合のベ
ース圧力と規格化変換効率との関係を示す特性図。FIG. 7 is a characteristic diagram showing the relationship between the base pressure and the normalized conversion efficiency when the thickness of the metal electrode film is 0.5 μm in the tandem solar cells according to Example 3 and Comparative Example 3.
【図８】実施例３及び比較例３に係るタンデム型太陽電
池において、ベース圧力が２×１０−４Ｐａの場合の金
属電極膜膜厚と規格化変換効率との関係を示す特性図。FIG. 8 is a characteristic diagram showing the relationship between the metal electrode film thickness and the normalized conversion efficiency when the base pressure is 2 × 10 −4 Pa in the tandem solar cells according to Example 3 and Comparative example 3.
【図９】実施例４及び比較例４に係るタンデム型太陽電
池において、金属電極膜の膜厚が０．５μｍの場合のベ
ース圧力と規格化変換効率との関係を示す特性図。FIG. 9 is a characteristic diagram showing the relationship between base pressure and normalized conversion efficiency when the metal electrode film has a thickness of 0.5 μm in the tandem solar cells according to Example 4 and Comparative Example 4.
【図１０】実施例４及び比較例４に係るタンデム型太陽
電池において、ベース圧力が２×１０−４Ｐａの場合の
金属電極膜膜厚と規格化変換効率との関係を示す特性
図。FIG. 10 is a characteristic diagram showing the relationship between the metal electrode film thickness and the normalized conversion efficiency when the base pressure is 2 × 10 −4 Pa in the tandem solar cells according to Example 4 and Comparative Example 4.
【符号の説明】
１１…ガラス基板（支持体）、
１２…透明導電層、
１３…第１のセル、
１３ａ，１３ｂ，１３ｃ，１４ａ，１４ｂ，１４ｃ…Ｓ
ｉ発電膜、
１４…第２のセル、
１５…酸化物層、
１６…金属電極層（反射用金属膜）。[Explanation of Codes] 11 ... Glass substrate (support), 12 ... Transparent conductive layer, 13 ... First cell, 13a, 13b, 13c, 14a, 14b, 14c ... S
i power generation film, 14 ... Second cell, 15 ... Oxide layer, 16 ... Metal electrode layer (reflection metal film).
───────────────────────────────────────────────────── フロントページの続き (72)発明者 山口 賢剛 長崎県長崎市深堀町五丁目717番１号 三 菱重工業株式会社長崎研究所内 Ｆターム(参考） 5F051 AA03 AA05 DA04 DA17 FA03 FA06 FA15 FA23 GA03 GA06 HA03 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Kengo Yamaguchi 3-5-1, 717-1, Fukahori-cho, Nagasaki-shi, Nagasaki Hishi Heavy Industries Ltd. Nagasaki Research Center F-term (reference) 5F051 AA03 AA05 DA04 DA17 FA03 FA06 FA15 FA23 GA03 GA06 HA03
Claims (3)
ァスＳｉ又は結晶質Ｓｉよりなるｐｉｎ型又はｎｉｐ型
構造の複数のセルを1つ又は多段に積層し、更に前記セ
ル上に酸化物層を介して形成された反射用金属膜を形成
した太陽電池において、 前記反射用金属膜の波長６００ｎｍ〜１２００ｎｍの入
射光に対する反射率は８０％以上であることを特徴とす
る太陽電池。1. A plurality of cells of pin type or nip type structure made of amorphous Si or crystalline Si are laminated on a support through a transparent electrode film in one or multiple stages, and further an oxide layer is formed on the cells. A solar cell having a reflection metal film formed through the above, wherein the reflection metal film has a reflectance of 80% or more for incident light having a wavelength of 600 nm to 1200 nm.
１０-４Ｐａ以下の減圧雰囲気下で形成されることを特
徴とする請求項１記載の太陽電池。2. The reflection metal film has a base pressure of 4 ×.
The solar cell according to claim 1, wherein the solar cell is formed under a reduced pressure atmosphere of 10 −4 Pa or less.
ｍであることを特徴とする請求項１記載の太陽電池。3. The reflection metal film has a thickness of 0.2 to 2 μm.
The solar cell according to claim 1, wherein the solar cell is m.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006120737A (en) * | 2004-10-19 | 2006-05-11 | Mitsubishi Heavy Ind Ltd | Photoelectric conversion element |
| WO2009154137A1 (en) * | 2008-06-17 | 2009-12-23 | 株式会社アルバック | Solar cell and method for manufacturing the same |
| WO2011004631A1 (en) * | 2009-07-10 | 2011-01-13 | 三菱重工業株式会社 | Manufacturing method for photoelectric conversion device |
-
2001
- 2001-12-05 JP JP2001371607A patent/JP2003174177A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006120737A (en) * | 2004-10-19 | 2006-05-11 | Mitsubishi Heavy Ind Ltd | Photoelectric conversion element |
| WO2009154137A1 (en) * | 2008-06-17 | 2009-12-23 | 株式会社アルバック | Solar cell and method for manufacturing the same |
| JPWO2009154137A1 (en) * | 2008-06-17 | 2011-12-01 | 株式会社アルバック | Solar cell and method for manufacturing the same |
| KR101153435B1 (en) | 2008-06-17 | 2012-06-07 | 가부시키가이샤 아루박 | Solar cell and method for manufacturing the same |
| WO2011004631A1 (en) * | 2009-07-10 | 2011-01-13 | 三菱重工業株式会社 | Manufacturing method for photoelectric conversion device |
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