JP2004146365A - 発光装置 - Google Patents

発光装置 Download PDF

Info

Publication number: JP2004146365A
Authority: JP; Japan
Prior art keywords: electrode; emitting device; light emitting; phosphor; emitter
Prior art date: 2002-09-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP2003300260A

Other languages

English (en)

Japanese (ja)

Inventor

Yukihisa Takeuchi

武内　幸久

Tsutomu Nanataki

七瀧　努

Iwao Owada

大和田　巌

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NGK Insulators Ltd

Original Assignee

NGK Insulators Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-09-30

Filing date

2003-08-25

Publication date

2004-05-20

2003-08-25 Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd

2003-08-25 Priority to JP2003300260A priority Critical patent/JP2004146365A/ja

2003-09-30 Priority to EP20030256144 priority patent/EP1403897A2/de

2004-05-20 Publication of JP2004146365A publication Critical patent/JP2004146365A/ja

Status Pending legal-status Critical Current

Links

OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 145
239000000126 substance Substances 0.000 claims abstract description 61
230000002093 peripheral effect Effects 0.000 claims description 47
230000010287 polarization Effects 0.000 claims description 42
239000000463 material Substances 0.000 claims description 30
230000008859 change Effects 0.000 claims description 18
238000002360 preparation method Methods 0.000 claims description 18
230000005684 electric field Effects 0.000 description 25
238000000034 method Methods 0.000 description 21
150000002500 ions Chemical class 0.000 description 18
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 18
238000010586 diagram Methods 0.000 description 14
125000006850 spacer group Chemical group 0.000 description 14
239000000919 ceramic Substances 0.000 description 12
239000010408 film Substances 0.000 description 10
239000003989 dielectric material Substances 0.000 description 9
229910052697 platinum Inorganic materials 0.000 description 9
150000001875 compounds Chemical class 0.000 description 6
NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 6
238000009826 distribution Methods 0.000 description 6
230000008020 evaporation Effects 0.000 description 6
238000001704 evaporation Methods 0.000 description 6
229910052751 metal Inorganic materials 0.000 description 6
239000002184 metal Substances 0.000 description 6
230000004048 modification Effects 0.000 description 6
238000012986 modification Methods 0.000 description 6
238000010894 electron beam technology Methods 0.000 description 5
238000010304 firing Methods 0.000 description 5
238000010849 ion bombardment Methods 0.000 description 5
238000004519 manufacturing process Methods 0.000 description 5
239000000203 mixture Substances 0.000 description 5
ZBSCCQXBYNSKPV-UHFFFAOYSA-N oxolead;oxomagnesium;2,4,5-trioxa-1$l^{5},3$l^{5}-diniobabicyclo[1.1.1]pentane 1,3-dioxide Chemical compound [Mg]=O.[Pb]=O.[Pb]=O.[Pb]=O.O1[Nb]2(=O)O[Nb]1(=O)O2 ZBSCCQXBYNSKPV-UHFFFAOYSA-N 0.000 description 5
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
230000009471 action Effects 0.000 description 4
239000000956 alloy Substances 0.000 description 4
229910045601 alloy Inorganic materials 0.000 description 4
HEPLMSKRHVKCAQ-UHFFFAOYSA-N lead nickel Chemical compound [Ni].[Pb] HEPLMSKRHVKCAQ-UHFFFAOYSA-N 0.000 description 4
229910052750 molybdenum Inorganic materials 0.000 description 4
239000011733 molybdenum Substances 0.000 description 4
230000008569 process Effects 0.000 description 4
229910052712 strontium Inorganic materials 0.000 description 4
CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 4
KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
239000011575 calcium Substances 0.000 description 3
239000013078 crystal Substances 0.000 description 3
229910052746 lanthanum Inorganic materials 0.000 description 3
FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 3
MLOKPANHZRKTMG-UHFFFAOYSA-N lead(2+);oxygen(2-);tin(4+) Chemical compound [O-2].[O-2].[O-2].[Sn+4].[Pb+2] MLOKPANHZRKTMG-UHFFFAOYSA-N 0.000 description 3
239000011572 manganese Substances 0.000 description 3
230000008018 melting Effects 0.000 description 3
238000002844 melting Methods 0.000 description 3
239000010955 niobium Substances 0.000 description 3
238000004544 sputter deposition Methods 0.000 description 3
239000010409 thin film Substances 0.000 description 3
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
229910052721 tungsten Inorganic materials 0.000 description 3
239000010937 tungsten Substances 0.000 description 3
OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
230000001133 acceleration Effects 0.000 description 2
229910052788 barium Inorganic materials 0.000 description 2
DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
229910002113 barium titanate Inorganic materials 0.000 description 2
229910052791 calcium Inorganic materials 0.000 description 2
229910052799 carbon Inorganic materials 0.000 description 2
229910010293 ceramic material Inorganic materials 0.000 description 2
238000005229 chemical vapour deposition Methods 0.000 description 2
239000011248 coating agent Substances 0.000 description 2
238000000576 coating method Methods 0.000 description 2
229910017052 cobalt Inorganic materials 0.000 description 2
239000010941 cobalt Substances 0.000 description 2
GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
239000004020 conductor Substances 0.000 description 2
239000000470 constituent Substances 0.000 description 2
RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 2
230000007547 defect Effects 0.000 description 2
CJXLIMFTIKVMQN-UHFFFAOYSA-N dimagnesium;oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Mg+2].[Mg+2].[Ta+5].[Ta+5] CJXLIMFTIKVMQN-UHFFFAOYSA-N 0.000 description 2
238000010438 heat treatment Methods 0.000 description 2
MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
JQJCSZOEVBFDKO-UHFFFAOYSA-N lead zinc Chemical compound [Zn].[Pb] JQJCSZOEVBFDKO-UHFFFAOYSA-N 0.000 description 2
DJZHPOJZOWHJPP-UHFFFAOYSA-N magnesium;dioxido(dioxo)tungsten Chemical compound [Mg+2].[O-][W]([O-])(=O)=O DJZHPOJZOWHJPP-UHFFFAOYSA-N 0.000 description 2
229910052748 manganese Inorganic materials 0.000 description 2
WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
238000002156 mixing Methods 0.000 description 2
230000007935 neutral effect Effects 0.000 description 2
229910052759 nickel Inorganic materials 0.000 description 2
229910052758 niobium Inorganic materials 0.000 description 2
GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
229910052763 palladium Inorganic materials 0.000 description 2
230000001681 protective effect Effects 0.000 description 2
230000009467 reduction Effects 0.000 description 2
238000005245 sintering Methods 0.000 description 2
229910052725 zinc Inorganic materials 0.000 description 2
239000011701 zinc Substances 0.000 description 2
229910018921 CoO 3 Inorganic materials 0.000 description 1
IHWJXGQYRBHUIF-UHFFFAOYSA-N [Ag].[Pt] Chemical compound [Ag].[Pt] IHWJXGQYRBHUIF-UHFFFAOYSA-N 0.000 description 1
VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 description 1
238000010521 absorption reaction Methods 0.000 description 1
230000003213 activating effect Effects 0.000 description 1
230000003321 amplification Effects 0.000 description 1
229910052787 antimony Inorganic materials 0.000 description 1
WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
229910000416 bismuth oxide Inorganic materials 0.000 description 1
239000005388 borosilicate glass Substances 0.000 description 1
229910021393 carbon nanotube Inorganic materials 0.000 description 1
239000002041 carbon nanotube Substances 0.000 description 1
239000011195 cermet Substances 0.000 description 1
238000000354 decomposition reaction Methods 0.000 description 1
229910003460 diamond Inorganic materials 0.000 description 1
239000010432 diamond Substances 0.000 description 1
TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
-1 dipping Substances 0.000 description 1
238000007598 dipping method Methods 0.000 description 1
238000001035 drying Methods 0.000 description 1
239000007772 electrode material Substances 0.000 description 1
238000005566 electron beam evaporation Methods 0.000 description 1
238000001962 electrophoresis Methods 0.000 description 1
230000007613 environmental effect Effects 0.000 description 1
230000005284 excitation Effects 0.000 description 1
238000007667 floating Methods 0.000 description 1
239000011521 glass Substances 0.000 description 1
229910002804 graphite Inorganic materials 0.000 description 1
239000010439 graphite Substances 0.000 description 1
230000010354 integration Effects 0.000 description 1
238000007733 ion plating Methods 0.000 description 1
238000010884 ion-beam technique Methods 0.000 description 1
229910052741 iridium Inorganic materials 0.000 description 1
GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
229910000457 iridium oxide Inorganic materials 0.000 description 1
HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
ACNRWWUEFJNUDD-UHFFFAOYSA-N lead(2+);distiborate Chemical compound [Pb+2].[Pb+2].[Pb+2].[O-][Sb]([O-])([O-])=O.[O-][Sb]([O-])([O-])=O ACNRWWUEFJNUDD-UHFFFAOYSA-N 0.000 description 1
239000004973 liquid crystal related substance Substances 0.000 description 1
230000007246 mechanism Effects 0.000 description 1
QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
229910052753 mercury Inorganic materials 0.000 description 1
MYWUZJCMWCOHBA-VIFPVBQESA-N methamphetamine Chemical compound CN[C@@H](C)CC1=CC=CC=C1 MYWUZJCMWCOHBA-VIFPVBQESA-N 0.000 description 1
229910000510 noble metal Inorganic materials 0.000 description 1
238000003199 nucleic acid amplification method Methods 0.000 description 1
230000001590 oxidative effect Effects 0.000 description 1
SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
238000005268 plasma chemical vapour deposition Methods 0.000 description 1
238000007747 plating Methods 0.000 description 1
238000007639 printing Methods 0.000 description 1
229910052703 rhodium Inorganic materials 0.000 description 1
239000010948 rhodium Substances 0.000 description 1
MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
229910001925 ruthenium oxide Inorganic materials 0.000 description 1
WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
229920006395 saturated elastomer Polymers 0.000 description 1
238000007650 screen-printing Methods 0.000 description 1
239000004065 semiconductor Substances 0.000 description 1
238000005507 spraying Methods 0.000 description 1
229940071182 stannate Drugs 0.000 description 1
230000001954 sterilising effect Effects 0.000 description 1
230000005068 transpiration Effects 0.000 description 1
238000001771 vacuum deposition Methods 0.000 description 1
235000012431 wafers Nutrition 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/53—Electrodes intimately associated with a screen on or from which an image or pattern is formed, picked-up, converted, or stored
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels

Landscapes

Discharge Lamps And Accessories Thereof (AREA)
Cold Cathode And The Manufacture (AREA)
Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)

JP2003300260A 2002-09-30 2003-08-25 発光装置 Pending JP2004146365A (ja)

Priority Applications (2)

Application Number	Priority Date	Filing Date	Title
JP2003300260A JP2004146365A (ja)	2002-09-30	2003-08-25	発光装置
EP20030256144 EP1403897A2 (de)	2002-09-30	2003-09-30	Lichterzeugendes element

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2002286207		2002-09-30
JP2003300260A JP2004146365A (ja)	2002-09-30	2003-08-25	発光装置

Publications (1)

Publication Number	Publication Date
JP2004146365A true JP2004146365A (ja)	2004-05-20

Family

ID=31980651

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2003300260A Pending JP2004146365A (ja)	2002-09-30	2003-08-25	発光装置

Country Status (2)

Country	Link
EP (1)	EP1403897A2 (de)
JP (1)	JP2004146365A (de)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP1617450A2 (de)	2004-07-15	2006-01-18	Ngk Insulators, Ltd.	Elektronenstrahlerzeugungsgerät
EP1617451A2 (de)	2004-07-15	2006-01-18	Ngk Insulators, Ltd.	Dielektrische Vorrichtung
EP1630842A2 (de)	2004-08-25	2006-03-01	Ngk Insulators, Ltd.	Elektronenemitter
JP2006066378A (ja) *	2004-07-27	2006-03-09	Ngk Insulators Ltd	光源
JP2006089366A (ja) *	2004-08-25	2006-04-06	Ngk Insulators Ltd	誘電体組成物、及び誘電体膜素子
EP1770742A2 (de)	2005-09-28	2007-04-04	Ngk Insulators, Ltd.	Elektronen-Emitter und Verfahren zu seiner Herstellung
US7276462B2 (en)	2004-08-25	2007-10-02	Ngk Insulators, Ltd.	Dielectric composition and dielectric film element
CN100400465C (zh) *	2004-08-25	2008-07-09	日本碍子株式会社	电介质组成物及电介质膜元件
US7482739B2 (en)	2004-07-15	2009-01-27	Ngk Insulators, Ltd.	Electron emitter comprised of dielectric material mixed with metal
US7495378B2 (en)	2004-07-15	2009-02-24	Ngk Insulators, Ltd.	Dielectric device
US7511409B2 (en)	2004-08-25	2009-03-31	Ngk Insulators, Ltd.	Dielectric film element and composition
US7723909B2 (en)	2005-06-23	2010-05-25	Ngk Insulators, Ltd.	Electron emitter formed of a dielectric material characterized by having high mechanical quality factor
US7816847B2 (en)	2004-07-15	2010-10-19	Ngk Insulators, Ltd.	Dielectric electron emitter comprising a polycrystalline substance

2003
- 2003-08-25 JP JP2003300260A patent/JP2004146365A/ja active Pending
- 2003-09-30 EP EP20030256144 patent/EP1403897A2/de not_active Withdrawn

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US7482739B2 (en)	2004-07-15	2009-01-27	Ngk Insulators, Ltd.	Electron emitter comprised of dielectric material mixed with metal
EP1617451A2 (de)	2004-07-15	2006-01-18	Ngk Insulators, Ltd.	Dielektrische Vorrichtung
US7816847B2 (en)	2004-07-15	2010-10-19	Ngk Insulators, Ltd.	Dielectric electron emitter comprising a polycrystalline substance
EP1617450A2 (de)	2004-07-15	2006-01-18	Ngk Insulators, Ltd.	Elektronenstrahlerzeugungsgerät
US7495378B2 (en)	2004-07-15	2009-02-24	Ngk Insulators, Ltd.	Dielectric device
JP2006066378A (ja) *	2004-07-27	2006-03-09	Ngk Insulators Ltd	光源
US7276462B2 (en)	2004-08-25	2007-10-02	Ngk Insulators, Ltd.	Dielectric composition and dielectric film element
CN100400465C (zh) *	2004-08-25	2008-07-09	日本碍子株式会社	电介质组成物及电介质膜元件
JP2006089366A (ja) *	2004-08-25	2006-04-06	Ngk Insulators Ltd	誘電体組成物、及び誘電体膜素子
US7511409B2 (en)	2004-08-25	2009-03-31	Ngk Insulators, Ltd.	Dielectric film element and composition
EP1630842A2 (de)	2004-08-25	2006-03-01	Ngk Insulators, Ltd.	Elektronenemitter
US7723909B2 (en)	2005-06-23	2010-05-25	Ngk Insulators, Ltd.	Electron emitter formed of a dielectric material characterized by having high mechanical quality factor
EP1770742A2 (de)	2005-09-28	2007-04-04	Ngk Insulators, Ltd.	Elektronen-Emitter und Verfahren zu seiner Herstellung

Also Published As

Publication number	Publication date
EP1403897A2 (de)	2004-03-31

Legal Events

Date	Code	Title	Description
2005-02-28	A621	Written request for application examination	Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050225
2006-05-26	A977	Report on retrieval	Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20060526
2006-05-31	A131	Notification of reasons for refusal	Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060530
2006-10-04	A02	Decision of refusal	Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20061003

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JP2004146365A - 発光装置 - Google Patents

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Links

Images

Classifications

Landscapes

Priority Applications (2)

Applications Claiming Priority (2)

Publications (1)

Family

ID=31980651

Family Applications (1)

Country Status (2)

Cited By (13)

Cited By (13)

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