JP2004172596A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

Info

Publication number: JP2004172596A
Authority: JP; Japan
Prior art keywords: semiconductor layer; drain; semiconductor device; impurity concentration; source
Prior art date: 2002-10-28
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Abandoned

Application number

JP2003367761A

Other languages

English (en)

Japanese (ja)

Other versions

JP2004172596A5 (2

Inventor

Takahiro Korenari

貴弘是成

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Advanced LCD Technologies Development Center Co Ltd

Original Assignee

Advanced LCD Technologies Development Center Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-10-28

Filing date

2003-10-28

Publication date

2004-06-17

2003-10-28 Application filed by Advanced LCD Technologies Development Center Co Ltd filed Critical Advanced LCD Technologies Development Center Co Ltd

2003-10-28 Priority to JP2003367761A priority Critical patent/JP2004172596A/ja

2004-06-17 Publication of JP2004172596A publication Critical patent/JP2004172596A/ja

2006-11-02 Publication of JP2004172596A5 publication Critical patent/JP2004172596A5/ja

Status Abandoned legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title claims abstract description 135
238000004519 manufacturing process Methods 0.000 title claims description 14
239000012535 impurity Substances 0.000 claims abstract description 78
238000000034 method Methods 0.000 claims abstract description 13
230000005669 field effect Effects 0.000 claims description 15
238000009826 distribution Methods 0.000 claims description 14
239000013078 crystal Substances 0.000 claims description 13
230000001678 irradiating effect Effects 0.000 claims description 2
238000002425 crystallisation Methods 0.000 claims 1
230000008025 crystallization Effects 0.000 claims 1
230000000903 blocking effect Effects 0.000 abstract 1
239000010408 film Substances 0.000 description 64
239000000969 carrier Substances 0.000 description 23
210000000746 body region Anatomy 0.000 description 17
238000010586 diagram Methods 0.000 description 11
230000015556 catabolic process Effects 0.000 description 10
239000010409 thin film Substances 0.000 description 9
230000004888 barrier function Effects 0.000 description 8
229910052710 silicon Inorganic materials 0.000 description 8
239000010703 silicon Substances 0.000 description 8
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
239000000758 substrate Substances 0.000 description 7
229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
229920005591 polysilicon Polymers 0.000 description 6
230000007423 decrease Effects 0.000 description 5
230000005684 electric field Effects 0.000 description 4
239000011521 glass Substances 0.000 description 4
150000002500 ions Chemical class 0.000 description 4
239000002184 metal Substances 0.000 description 4
229910021417 amorphous silicon Inorganic materials 0.000 description 3
238000009825 accumulation Methods 0.000 description 2
230000005284 excitation Effects 0.000 description 2
239000012212 insulator Substances 0.000 description 2
238000000059 patterning Methods 0.000 description 2
229910004298 SiO 2 Inorganic materials 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
230000001133 acceleration Effects 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
230000000694 effects Effects 0.000 description 1
239000007772 electrode material Substances 0.000 description 1
238000002513 implantation Methods 0.000 description 1
230000006698 induction Effects 0.000 description 1
230000010354 integration Effects 0.000 description 1
238000010884 ion-beam technique Methods 0.000 description 1
239000004973 liquid crystal related substance Substances 0.000 description 1
230000003071 parasitic effect Effects 0.000 description 1
230000000630 rising effect Effects 0.000 description 1
150000003376 silicon Chemical class 0.000 description 1
229910052814 silicon oxide Inorganic materials 0.000 description 1
238000009751 slip forming Methods 0.000 description 1

Images

Landscapes

Thin Film Transistor (AREA)

JP2003367761A 2002-10-28 2003-10-28 半導体装置およびその製造方法 Abandoned JP2004172596A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP2003367761A JP2004172596A (ja)	2002-10-28	2003-10-28	半導体装置およびその製造方法

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2002312968		2002-10-28
JP2003367761A JP2004172596A (ja)	2002-10-28	2003-10-28	半導体装置およびその製造方法

Publications (2)

Publication Number	Publication Date
JP2004172596A true JP2004172596A (ja)	2004-06-17
JP2004172596A5 JP2004172596A5 (2)	2006-11-02

Family

ID=32715727

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2003367761A Abandoned JP2004172596A (ja)	2002-10-28	2003-10-28	半導体装置およびその製造方法

Country Status (1)

Country	Link
JP (1)	JP2004172596A (2)

2003
- 2003-10-28 JP JP2003367761A patent/JP2004172596A/ja not_active Abandoned

Similar Documents

Publication	Publication Date	Title
US5894157A (en)	1999-04-13	MOS transistor having an offset resistance derived from a multiple region gate electrode
US8829576B2 (en)	2014-09-09	Semiconductor structure and method of manufacturing the same
US7491591B2 (en)	2009-02-17	Thin film transistor having LDD structure
US20110278583A1 (en)	2011-11-17	Thin-film semiconductor device for display apparatus and manufacturing method thereof
JPH11243210A (ja)	1999-09-07	半導体デバイス及びその製造方法
US6734498B2 (en)	2004-05-11	Insulated channel field effect transistor with an electric field terminal region
US7663189B2 (en)	2010-02-16	Silicon-on-sapphire semiconductor device with shallow lightly-doped drain
US6982216B1 (en)	2006-01-03	MOSFET having reduced parasitic resistance and method of forming same
US20060273391A1 (en)	2006-12-07	CMOS devices for low power integrated circuits
JPH06268215A (ja)	1994-09-22	Ｍｉｓ型半導体装置
JP3008485B2 (ja)	2000-02-14	薄膜トランジスタ
JP2010034139A (ja)	2010-02-12	薄膜トランジスタおよびその製造方法
US20100207120A1 (en)	2010-08-19	Production method of semiconductor device and semiconductor device
JPS62274775A (ja)	1987-11-28	半導体装置
JPH0571190B2 (2)	1993-10-06
JPH11214696A (ja)	1999-08-06	薄膜トランジスタおよび薄膜トランジスタの製造方法
JP3934173B2 (ja)	2007-06-20	表示装置
JP3708370B2 (ja)	2005-10-19	半導体装置及びその製造方法
JPH10326748A (ja)	1998-12-08	薄膜トランジスタおよびその製造方法
KR100649822B1 (ko)	2006-11-24	Ｂｃｐｍｏｓｆｅｔ 및 그 제조방법
KR102583088B1 (ko)	2023-09-25	터널링 전계 효과 트랜지스터
KR101064229B1 (ko)	2011-09-14	커패시터리스 디램 소자
KR100191786B1 (ko)	1999-07-01	박막트랜지스터의 제조방법
KR100223916B1 (ko)	1999-10-15	반도체 소자의 구조 및 제조방법
JP3963462B2 (ja)	2007-08-22	半導体装置の製造方法

Legal Events

Date	Code	Title	Description
2005-03-29	RD02	Notification of acceptance of power of attorney	Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20050328
2005-03-29	RD03	Notification of appointment of power of attorney	Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20050328
2005-04-25	A521	Written amendment	Effective date: 20050328 Free format text: JAPANESE INTERMEDIATE CODE: A821
2006-09-16	A521	Written amendment	Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060915
2006-09-16	A621	Written request for application examination	Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060915
2009-04-09	A762	Written abandonment of application	Effective date: 20090408 Free format text: JAPANESE INTERMEDIATE CODE: A762