JP2004200302A5 - - Google Patents
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- Publication number
- JP2004200302A5 JP2004200302A5 JP2002365336A JP2002365336A JP2004200302A5 JP 2004200302 A5 JP2004200302 A5 JP 2004200302A5 JP 2002365336 A JP2002365336 A JP 2002365336A JP 2002365336 A JP2002365336 A JP 2002365336A JP 2004200302 A5 JP2004200302 A5 JP 2004200302A5
- Authority
- JP
- Japan
- Prior art keywords
- avalanche photodiode
- conductivity type
- layer
- light absorption
- thermal diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 8
- 238000009792 diffusion process Methods 0.000 claims 4
- 230000031700 light absorption Effects 0.000 claims 4
- 238000005468 ion implantation Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002365336A JP4166560B2 (ja) | 2002-12-17 | 2002-12-17 | アバランシェフォトダイオード及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002365336A JP4166560B2 (ja) | 2002-12-17 | 2002-12-17 | アバランシェフォトダイオード及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004200302A JP2004200302A (ja) | 2004-07-15 |
| JP2004200302A5 true JP2004200302A5 (2) | 2005-08-25 |
| JP4166560B2 JP4166560B2 (ja) | 2008-10-15 |
Family
ID=32762917
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002365336A Expired - Lifetime JP4166560B2 (ja) | 2002-12-17 | 2002-12-17 | アバランシェフォトダイオード及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4166560B2 (2) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9640703B2 (en) | 2004-10-25 | 2017-05-02 | Mitsubishi Electric Corporation | Avalanche photodiode |
| JP5045436B2 (ja) * | 2005-05-18 | 2012-10-10 | 三菱電機株式会社 | アバランシェフォトダイオード |
| JP4956944B2 (ja) * | 2005-09-12 | 2012-06-20 | 三菱電機株式会社 | アバランシェフォトダイオード |
| JP4985298B2 (ja) * | 2007-10-10 | 2012-07-25 | 三菱電機株式会社 | アバランシェフォトダイオード |
| JP2010135360A (ja) * | 2008-12-02 | 2010-06-17 | Mitsubishi Electric Corp | アバランシェフォトダイオード |
| JP7134338B2 (ja) | 2019-04-05 | 2022-09-09 | 三菱電機株式会社 | 半導体受光素子及び半導体受光素子製造方法 |
| JP7602346B2 (ja) * | 2020-10-14 | 2024-12-18 | 浜松ホトニクス株式会社 | 光センサ |
| WO2022157888A1 (ja) | 2021-01-21 | 2022-07-28 | 三菱電機株式会社 | アバランシェフォトダイオード |
| CN115621364A (zh) * | 2022-10-28 | 2023-01-17 | 厦门市三安集成电路有限公司 | 一种光电器件及其制备方法 |
-
2002
- 2002-12-17 JP JP2002365336A patent/JP4166560B2/ja not_active Expired - Lifetime
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